Number | Date | Country | Kind |
---|---|---|---|
62-288656 | Nov 1987 | JPX | |
63-110191 | May 1988 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
4101772 | Konishi et al. | Jul 1978 | |
4457803 | Takigawa | Jul 1984 | |
4559096 | Friedman et al. | Dec 1985 | |
4639301 | Doherty et al. | Jan 1987 | |
4734158 | Gillis | Mar 1988 | |
4756794 | Yoder | Jul 1988 |
Entry |
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WO-A-8 602 774 (Ion Beam Systems), Figures; p. 4, line 19-p. 5, line 23, p. 12, lines 12-24; p. 9, lines 1-3, International Publication date May 9, 1986. |
Journal of Vacuum Science & Technology/B, vol. 3, No. 1, second series, Jan./Feb. 1985, pp. 67-70, Woodbury, N.Y., US; Y. Ochiai, et al.: "Pressure and Irridiation Angle Dependence of Maskless Ion Beam Assisted Etching of GaAs and Si", p. 67, paragraph II. |