Patent Application
20250216451
The present disclosure relates to a method and an apparatus for testing a packaging substrate. More particularly, embodiments described herein relate to the contactless testing of electric interconnections in a packaging substrate, i.e. a panel-leveling packing (PLP) substrate or an advanced packaging (AP) substrate by using electron beams, particularly for identifying and characterizing defects such as shorts, opens, and/or leakages. Specifically, embodiments of the disclosure relate to methods of testing a packaging substrate, the packaging substrate being a panel level packaging substrate or an advanced packaging substrate, to apparatuses for testing a packaging substrate in accordance with methods described herein, and apparatuses for contactless testing of a packaging substrate.
In many applications, it is necessary to inspect a substrate to monitor the quality of the substrate. Since defects may e.g. occur during the processing of the substrates, e.g. during structuring or coating of the substrates, an inspection of the substrate for reviewing the defects and for monitoring the quality may be beneficial.
Semiconductor packaging substrates and printed circuits boards for the manufacture of complex microelectronic and/or micro-mechanic components are typically tested during and/or after manufacturing for determining defects, such as shorts or opens, in metal paths and interconnects provided at the substrate. For example, substrates for the manufacture of complex microelectronic devices may include a plurality of interconnect paths for connecting semiconductor chips or other electrical devices that are to be mounted on the packing substrate.
Various methods for testing such components are known. For example, contact pads of a component to be tested may be contacted with a contact probe, in order to determine whether the component is defective or not. Since the components and the contact pads are becoming smaller and smaller due to the progressing miniaturization of components, contacting the contact pads with a contact probe may be difficult, and there may even be a risk that the device under test gets damaged during the testing.
The complexity of packaging substrates is increasing and design rules (feature size) are decreasing substantially. Within such substrates, the surface contact points (for later flip chip or other chip mounting) are connected to other surface contact points on the packaging substrate to interconnect semiconductor (or other) devices. Standard methods like electrical-mechanical probing for electrical tests cannot satisfy the requirements of volume production testing, as the throughput decreases (higher number of test points) and contacting reliability decreases (smaller contact size). Beyond the reduced size and the problem of potentially damaging contact pads, the topography of the packaging substrates results in difficulties for other test methods, like test methods utilizing capacitive detectors or electrical field detectors, because such methods beneficially have a small mechanical spacing.
Accordingly, it would be beneficial to provide testing methods and testing apparatuses that are suitable for reliably and quickly testing complex microelectronic devices, particularly packaging substrates such as AP substrates and PLP substrates.
In light of the above, a method and apparatuses for testing a packaging substrate are provided according to the independent claims. Further aspects, advantages, and beneficial features are apparent from the dependent claims, the description, and the accompanying drawings.
According to an embodiment, a method of testing a packaging substrate with at least one electron beam column is provided. The packaging substrate is a panel level packaging substrate or an advanced packaging substrate. The method includes: placing the packaging substrate on a stage in a vacuum chamber; directing an electron beam of the at least one electron beam column with a first landing energy on at least a first portion of the packaging substrate; directing the electron beam of the at least one electron beam column with a second landing energy different from the first landing energy on the packaging substrate; and detecting signal electrons emitted upon impingement of the electron beam for testing at least a first device-to-device electrical interconnect path of the packaging substrate.
According to an embodiment, an apparatus for testing a packaging substrate is provided. The apparatus is configured for testing in accordance with a method of testing according to any of the embodiments of the present disclosure.
According to an embodiment, an apparatus for contactless testing of a packaging substrate is provided. The apparatus includes a vacuum chamber; a stage within the vacuum chamber, the stage being configured to support the packaging substrate being a panel level packaging substrate or an advanced packaging substrate; a charged particle beam column configured to generate an electron beam. The electron beam column includes an objective lens configured to focus the electron beam on the packaging substrate; a scan deflector configured to scan the electron beam to different positions on the packaging substrate; an electron detector for detecting signal electrons emitted upon impingement of the electron beam on the packaging substrate; and one or more power supplies to vary a landing energy of the electron beam. The apparatus further includes: an analysis unit for determining, based on the signal electrons, if a first device-to-device electrical interconnect path is defective.
Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus and a method for manufacturing the apparatuses and devices described herein. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:
Reference will now be made in detail to the various exemplary embodiments, one or more examples of which are illustrated in each figure. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet further embodiments. The intention is that the present disclosure includes such modifications and variations.
Within the following description of the drawings, the same reference numbers refer to same components. Only the differences with respect to the individual embodiments are described. The structures shown in the drawings are not necessarily depicted true to scale but rather serve the better understanding of the embodiments.
The complexity of packaging substrates has been increasing for years, with the aim of reducing the space requirements of semiconductor packages. For reducing the manufacturing costs, packaging techniques were proposed, such as 2.5D ICs, 3D-ICs, and wafer-level packaging (WLP), e.g. fan-out WLP. In WLP techniques, the integrated circuit is packaged before dicing. A “packaging substrate” as used herein relates to a packaging substrate configured for an advanced packaging technique, particularly an WLP-technique or a panel-level-packing (PLP)-technique.
“2.5D integrated circuits” (2.5D ICs) and “3D integrated circuits” (3D ICs) combine multiple dies in a single integrated package. Here, two or more dies are placed on a packaging substrate, e.g. on a silicon interposer or a panel-level-packaging substrate. In 2.5D ICs, the dies are placed on the packaging substrate side-by-side, whereas in 3D ICs at least some of the dies are placed on top of each other. The assembly can be packaged as a single component, which reduced costs and size as compared to a conventional 2D circuit board assembly.
A packaging substrate typically includes a plurality of device-to-device electrical interconnect paths for providing electrical connections between the chips or dies that are to be placed on the packaging substrate. The device-to-device electrical interconnect paths may extend through a body of the packaging substrate in a complex connection network, vertically (perpendicular to the surface of the packaging substrate) and/or horizontally (parallel to the surface of the packaging substrate) with end points (referred to herein as surface contact points) exposed at the surface of the packing substrate.
An advanced packaging (AP) substrate provides the device-two-device electrical interconnection paths on or within a wafer, such as a silicon wafer. For example, an AP substrate may include Through Silicon Vias (TSVs), e.g., provided in a silicon interposer, other conductor lines extending through the AP substrate. A panel-level-packaging substrate is provided from a compound material, for example material of a printed circuit board (PCB) or another compound material, including, for example ceramics and glass materials.
Panel-level-packaging substrates are manufactured that are configured for the integration of a plurality devices (e.g., chips/dies that may be heterogeneous, e.g. may have different sizes and configurations) in a single integrated package. Further, AP substrates may be combined on a PLP substrate. A panel-level substrate typically provides sites for a plurality of chips, dies, or AP substrates to be placed on a surface thereof, e.g. on one side thereof or on both sides thereof, as well as a plurality of device-to-device electrical interconnect paths extending through a body of the PLP substrate.
Notably, the size of a panel-level-substrate is not limited to the size of a wafer. For example, a panel-level-substrate may be rectangular or have another shape. Specifically, a panel-level-substrate may provide a surface area larger than the surface area of a typical wafer, e.g., 1000 cm2 or more. For example, the panel-level substrate may have a size of 30 cm×30 cm or larger, 60 cm×30 cm or larger, 60 cm×60 cm or larger.
The present disclosure relates to methods and apparatuses for testing packaging substrates that are configured for the integration of a plurality of devices in one integrated package, and that include at least one device-to-device electrical interconnect path. According to embodiments of the present disclosure, a test system, test apparatus, or test method may detect and/or classify defective electrical connections in a packaging substrate, such as opens, shorts, leakage defects, or others. Particularly, the test methods and test systems may provide a contactless testing. A contact pad pitch of 60 μm or below or even about 10 μm or below is difficult and even impossible for mechanical probing. Also, the small contact pads must not be damaged by any scratch. Contactless testing is beneficial.
According to embodiments of the present disclosure, E-beam testing and/or E-beam review provides for testing of contact pads of 60 μm or below or even about 10 μm or below. Voltage contrast testing imaging can be provided. Testing can be provided at or between “surface contact points” of the packaging substrate.
A “surface contact point” may be understood as an end point of an electrical interconnect path that is exposed at a surface of the packaging substrate, such that an electron beam can be directed on the surface contact point for contactless charging or probing the electrical interconnect path. A surface contact point is configured to electrically contact a chip, a die, a smaller package, or other electrical components like capacitors, resistors, coils, or the like, that is to be placed on the surface of the packaging substrate, e.g. via soldering. Electrical components may also include active electrical components, such as transformers changing the voltage in a region of the package. In some embodiments, the surface contact points may be or may include solder bumps.
According to embodiments of the present disclosure, 100% of the electrical interconnect paths are tested. The costs of ownership of device packages including the chips etc., such as processors, memories, or the like (microelectronic devices), is mainly determined by the highly integrated microelectronic devices. Accordingly, mounting a non-defective microelectronic device to a defective packaging substrate is disadvantageous with respect to manufacturing cost. A fully non-defective packaging substrate is desirable before mounting of the microelectronic devices.
According to an embodiment, a method of testing a packaging substrate is provided. The packaging substrate is a panel level packaging substrate or an advanced packaging substrate. The packaging substrate is tested with at least one electron beam. The method includes placing the packaging substrate on a stage in a vacuum chamber; directing an electron-beam of the at least one electron beam column with the first landing energy on at least a first portion of the packaging substrate and directing the electron-beam of the at least one electron beam column with a second landing energy different from the first landing energy on the packaging substrate. The method further includes detecting signal electrons emitted upon impingement of the electron-beam for testing at least the first device-to-device electrical interconnect path of the packaging substrate.
According to embodiments of the present disclosure, testing of features, for example, electrical interconnection paths, of the packaging substrate can be provided, wherein charge up of features and/or the packaging substrate can be controlled. Variation of the e-beam primary energy (Upe), i.e. the landing energy of the electron beam on the packaging substrate, can be utilized to control the charge on the packaging substrate or respective portions thereof. Accordingly, a contactless electrical test with an electron-beam can be provided. The test may include a voltage signal reading, i.e. a voltage contrast measurement upon detection of signal electrons, for example, secondary electrons. Test positions, i.e. surface contact points, of an advanced packaging substrate or panel level packaging substrate can be charged without contact to avoid damage to the surface contact points.
As it is schematically depicted in
The packaging substrate 10 may include a plurality of device-to-device electrical interconnect paths 20 for connecting a plurality of devices that are to be placed on the packaging substrate 10. In
According to embodiments described herein, the packaging substrate 10 is placed on a stage 105 in the vacuum chamber 110. The stage can be movable, particularly in the z-direction (i.e., in a direction perpendicular to the stage surface) and/or in the x- and y-directions (i.e., in the plane of the stage surface). The stage 105 is provided within the vacuum chamber and is configured to support the packaging substrate being one of a panel level packaging substrate and an advanced packaging substrate. An electron beam 111 is directed on the first surface contact point 21. The electron beam can be scanned to be directed to that second surface contact point 22. Signal electrons 113 emitted from the second surface contact point 22 are detected for testing the first device-to-device electrical interconnect path 20. The signal electrons may be secondary electrons and/or backscattered electrons. For example, it can be determined whether the first device-to-device electrical interconnect path 20 has an “open”-defect.
Alternatively or additionally, the electron beam 111 is directed on a further surface contact point 27 that is not an end point of the first device-to-device electrical interconnect path 20, i.e. that belongs to a second device-to-device electrical interconnect path 23 that may extend through the packaging substrate adjacent to the first device-to-device electrical interconnect path 20. Signal electrons emitted from the further surface contact point 27 are detected for testing the first device-to-device electrical interconnect path 20. The signal electrons may be secondary electrons and/or backscattered electrons. For example, it can be determined whether the first device-to-device electrical interconnect path 20 has a “short”-defect.
In particular, by detecting the signal electrons 113 emitted upon impingement of the electron beam 111 on the packaging substrate (particularly, by determining the energy of the signal electrons 113 that depends on the electric potential of the second surface contact point 22 or of the further surface contact point 27), it can be determined in a “voltage contrast measurement”, if the first device-to-device electrical interconnect path 20 is defective. Specifically, defective connections in the packaging substrate can be determined and classified, e.g. in open, short and/or leakage defects.
In some embodiments, which can be combined with other embodiments described herein, one or more electrical connections extending between surface contacts on different sides of the substrate are inspected. In yet further embodiments, a first plurality of electrical connections extending between surface contacts on a first side of the substrate, a second plurality of electrical connections extending between surface contacts on a second side of the substrate, and/or or third plurality of electrical connections extending between surface contacts on different sides of the substrate are inspected. For example, one or more electron beam columns may be arranged on both sides of the substrates (not shown in the figures), such that surface contacts on both sides of the substrate can be charged and/or discharged for inspecting and testing the respective electrical connections.
According to embodiments described herein, both the charging and the probing is provided with an electron beam, particularly a scanning electron beam. Other testing methods like electrical and/or mechanical probing cannot provide the throughput provided by the methods and systems described herein. The methods and system described herein rely on the contactless charging and probing with electron beams. Further, the contact reliability of an electrical and/or mechanical tester decreases with the decreasing size and the increasing density and number of surface contact points that are to be tested in advanced packaging substrates. For example, contact pad sizes of 30 μm or less are difficult for mechanical probing. Further, the topography of the packaging substrates and of the surface contact points of packaging substrates may pose a problem for other test methods, such as for capacitive detectors or electrical field detectors. It is further advantageous to have a charging electron beam, e.g. as compared to a flood gun electron charging. In light of the complexity of the packing substrates, the capability of local charging as compared to charging an entire area with a flood gun improves the test procedures that are available. Further, local charging reduces the overall charge accumulated on the packing substrate. Yet further, different charging in different areas may result in a reduced overall charge provided on the substrate. For example, the overall charged can be kept close to neutral if one area is charged positive and another area is charged negative. According to some embodiments, which can be combined with other embodiments described herein, a pattern of different charges can be provided on portions of the packaging substrate.
The testing method described herein is suitable for testing packaging substrates for multi-device in-package integration, particularly for testing panel-level-packaging substrates (PLP substrates) or advanced packaging substrates (AP substrates), and uses an e-beam both for charging the device-to-device electrical interconnect path 20 and for reading the charged circuitry voltage, particularly by probing the second surface contact point and/or further surface contact points. In other words, both the “electrical driving” and the “probing” is done with an electron beam, such that defects can be reliably and quickly found. Testing by e-beam charging and e-beam probing (e.g., with an EBT column or an EBR column) is independent of topography, fast, and flexible in regards of contact point positions, size and geometry, whereas the topography of the packaging substrate may be a problem for other test methods like capacitive or electrical field detectors.
A packing substrate, such as a PLP substrate, may include a plurality of device-to-device connections, e.g. 5.000 or more, 10.000 or more, 20.000 or more, or even 50.000 or more. The connections may include Through Silicon Vias (TSVs), e.g., provided in a silicon interposer, other conductor lines extending through the packaging substrate, and/or may include multi-die interconnect bridges that may be embedded in the packaging substrate. The packaging substrate may be a multi-layer substrate including electrical interconnections in a plurality of layers arranged on top of each other, e.g. in a layer stack.
In some embodiments, the packaging substrate 10 includes a plurality of device-to-device electrical interconnect paths extending between respective first and second surface contact points, and optional further contact points, and the method may include testing the plurality of device-to-device electrical interconnect paths sequentially or in parallel. “Sequential testing” as used herein refers to the subsequent testing of a plurality of device-to-device electrical interconnect paths of the packaging substrate. For example, 5.000 or more device-to-device electrical interconnect paths are tested one after the other. “Parallel testing” as used herein may refer to the synchronous testing of two or more device-to-device electrical interconnect paths. “Parallel testing” as used herein may also refer to the testing of several device-to-device electrical interconnect paths by scanning the electron beam for charging within one field of view over several first surface contact points while scanning the electron beam for probing in one field of view over several corresponding second surface contact points.
In some embodiments, directing the electron beam 111 on the first surface contact point includes focusing the electron beam 111 on the first surface contact point 21, e.g. with a beam probe diameter on the packaging substrate of 30 μm or less, particularly 10 μm or less. A focusing of the charging electron beam on the packaging substrate, e.g. with an objective lens, can prevent the charging of substrate surface areas different from the surface contact points and can provide more accurate testing results. Additionally or alternatively, particularly for detection of signal electron beams, the electron beam may be scanned across a portion of the packaging substrate to generate an image of a portion of the packaging substrate. The image can include voltage contrast information. A defect detection of one or more electrical interconnect paths or a classification of the defect can be provided, for example, by pattern recognition within the image.
While conventional PCBs typically include comparatively large flat metal pads that form surface contact points for testing, a packaging substrate that is tested according to embodiments described herein may include huge numbers of small, convexly shaped solder bumps to be tested which makes testing more challenging. In particular, the first surface contact point 21 and the second surface contact point 22 may have a maximum dimension of 25 μm or less, particularly 10 μm or less, respectively. For example, the first and second surface contact points may be essentially round, particularly semi-spherically shaped, with a diameter of 25 μm or less, particularly 10 μm or less. According to some embodiments, which can be combined with other embodiments described herein, a surface contact point can have a three-dimensional topography, particularly a substantially semi-spherical shape.
In contrast to mechanical testers, electron beams can be accurately directed on such small surface areas because electron beams can be focused down to very small probe diameters and can be accurately directed on predetermined points of the substrate, e.g. with scan deflectors, e.g. with an accuracy in a sub-um-range. While other testers may slip or slide from surface contact points with a convex geometry, electron beams can be accurately focused onto arbitrary geometries, such that the testing methods described herein are geometry-independent and topography-independent.
As it is schematically depicted in
According to some embodiments, which can be combined with other embodiments described herein, the electron beam of an electron-beam column is focused while directing the electron-beam with a first landing energy on the packaging substrate, with the second landing energy on the packaging substrate, and for detecting signal electrons.
The apparatus 100 further includes an electron detector 140 for detecting signal electrons 113 emitted upon impingement of the second electron beam on the packaging substrate, and an analysis unit 141 configured to determine, based on the signal electrons 113, if the first device-to-device electrical interconnect path 20 is defective. In some embodiments, the analysis unit 141 may be configured to determine, based on the detected signal electrons, whether an electrical interconnect path has a defect, such as a short, an open and/or a leakage. Optionally, the analysis unit 141 may be configured to classify any detected defect. In some embodiments, the analysis unit 141 may be configured to determine, based on the detected signal electrons from subsequent measurements, whether a short or a leakage exists between two or more electrical interconnect paths. In some implementations, the signal electrons 113 detected by the electron detector 140 may provide information about an electric potential of the substrate location from which the signal electrons 113 are emitted or reflected, and the analysis unit 141 may be configured to determine from said information if the first device-to-device electrical interconnect path 20 is defective or not. The analysis unit 141 may be further configured to classify a determined defect. Specifically, testing may include determining, by the analysis unit 141, if the first device-to-device electrical interconnect path 20 has any of a short, an open, and/or a leakage. An “open” is understood as an open electrical interconnect path that does not actually electrically connect the first surface contact point 21 and the second surface contact point 22. A “short” is understood as an electrical connection between two electrical interconnect paths that are actually to be electrically separated.
In some embodiments, which can be combined with other embodiments described herein, the electron detector 140 includes an Everhard-Thornley detector. An energy filter 142 for the signal electrons 113 may be arranged in front of the electron detector 140, particularly in front of the Everhard-Thornley detector, as it is schematically depicted in FIG. 1. The energy filter may include a grid electrode configured to be set on a predetermined potential. The energy filter 142 may allow the suppression of low-energy signal electrons. The energy filter 142 may suppress signal electrons that are irrelevant for the voltage contrast measurements to be conducted. In some implementations, the energy filter 142 may suppress signal electrons emitted from uncharged surface areas and may only let through signal electrons emitted from a charged surface contact point. Accordingly, the signal current detected by the electron detector may depend on the energy of the signal electrons which indicates if a probed surface contact point is defective or not.
In some embodiments, the apparatus 100 may include a scan controller 123 connected to a scan deflector 122 of the charged particle beam column 120. The scan deflector 122 may be configured to scan the electron beam over a substrate surface. The electron beam may be directed on a portion of the packaging substrate, e.g. with a first beam probe diameter. The portion of the packaging substrate can be an area of the packaging substrate, wherein the electron beam is scanned or the area of the packaging substrate. The electron beam can be raster scanned over the portion of the packaging substrate. For example, one or more scan deflectors 122 can scan the electron-beam over the portion of the packaging substrate. The portion of the packaging substrate may also be a surface contact point. The electron-beam can be vector scanned to one or more surface contact points of the packaging substrate. For example, one or more scan deflectors can be used to vector scan the electron-beam to one or more surface contact points.
For example, the scan controller 123 may be configured to control the scan deflectors such that the electron beam is sequentially directed to pairs of first and second surface contact points for testing respective device-to-device electrical interconnect paths extending between the respective pairs of first and second surface contact points. This allows a quick and reliable test of a plurality of electrical interconnect paths extending through the packaging substrate.
According to some embodiments, which can be combined with other embodiments described herein, the electron beam can be vector scanned to individual positions, for example surface contact points of the packaging substrate, for charging and can be vector scanned to individual positions for detecting signal electrons. Alternatively, the electron beam can be vector scanned to individual positions, for example surface contact points of the packaging substrate, for charging and can be raster scanned over an area of the packaging substrate for detecting signal electrons. According to some embodiments, which can be combined with other embodiments described herein, an electron-beam of the charged particle beam column can be scanned to one or more positions on the packaging substrate for charging and for detecting of signal electrons.
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The controller 180 comprises a central processing unit (CPU), a memory and, for example, support circuits. To facilitate control of the apparatus for testing packaging substrates, the CPU may be one of any form of general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory is coupled to the CPU. The memory, or a computer readable medium, may be one or more readily available memory devices such as random access memory, read only memory, hard disk, or any other form of digital storage either local or remote. The support circuits may be coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and related subsystems, and the like. Inspecting process instructions are generally stored in the memory as a software routine typically known as a recipe. The software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU. The software routine, when executed by CPU, transforms the general purpose computer into a specific purpose computer (controller) that controls the apparatus operation such as that for controlling the landing energy, the stage positioning and charged particle beam scanning during the testing operation. Although the method and/or process of the present disclosure is discussed as being implemented as a software routine, some of the method steps that are disclosed therein may be performed in hardware as well as by the software controller. As such, embodiments of the invention may be implemented in software as executed upon a computer system, and hardware as an application specific integrated circuit or other type of hardware implementation, or a combination of software and hardware.
The controller may execute or perform a method of testing a packaging substrate with an electron beam column. The method according to some embodiments includes directing an electron-beam of the at least one electron beam column with the first landing energy on at least a first portion of the packaging substrate and directing the electron beam of the at least one electron beam column with the second landing energy different from the first landing energy on the packaging substrate. The method further includes detecting signal electrons emitted upon impingement of the electron beam for testing at least one first device-to-device electrical interconnect path of the packaging substrate.
According to an embodiment, and apparatus for testing of packaging substrates with any of the methods described herein is provided. The apparatus may include the controller 180. The controller includes a processor and a memory storing instructions that, when executed by the processor, cause the apparatus to perform a method according embodiments of the present disclosure.
According to an embodiment, an apparatus for contactless testing of a packaging substrate is provided, wherein the packaging substrate is a panel level packaging substrate or an advanced packaging substrate. The apparatus includes a vacuum chamber; a stage within the vacuum chamber, the stage being configured to support the packaging substrate being a panel level packaging substrate or an advanced packaging substrate; and an electron beam column configured to generate an electron beam. The electron beam column includes an objective lens configured to focus the electron beam on the packaging substrate; a scan deflector configured to scan the electron beam to different positions on the packaging substrate; an electron detector for detecting signal electrons emitted upon impingement of the electron beam on the packaging substrate; and one or more power supplies to vary the landing energy of the electron beam. The apparatus further includes an analysis unit for determining, based on the signal electrons, if the first device-to-device electrical interconnect path is defective.
According to some embodiments, which can be combined with other embodiments described herein, the electron detector can include an Everhard-Thornley detector and an energy filter for the signal electrons in front of the Everhard-Thornley detector. Additionally or alternatively, a scan controller can be provided. The scan controller is configured to sequentially direct the electron beam to pairs of first and second surface contact points for testing respective device-to-device electrical interconnect paths extending between the respective pairs of first and second surface contact points.
Embodiments described herein control the signal electron yield or the secondary electron yield by adjusting or varying the landing energy of the electron beam on the packaging substrate. Contactless electrical testing can provide, for example, voltage contrast measurement, and charging of surface contact points without damage and with charge control. For example, surface contact points can be negatively charged or positively charged depending on the landing energy of the primary electron beam. Further, surface contact points can be discharged by adjusting the landing energy of the primary electron beam. According to some embodiments, which can be combined with other embodiments described herein, the focus on the substrate surface can be reduced, i.e. the beam diameter on the substrate surface can be increased, for directing the electron-beam with a landing energy configured to discharge portions of the packaging substrate. Charge control reduces the influence of the charge on the packaging substrate on the electron-beam performance. Further, the plurality of different test procedures can be applied. Detection and classification of electrical defects on the packaging substrate, for example, electrical defects of device-to-device electrical interconnection paths can be provided.
In
After the test of the first device-to-device electrical interconnect path 20, the electron beam 111 can be directed on two surface contact points of a second device-to-device electrical interconnect path 23, e.g. by scanning (vector scanning) the electron beams with respective scan deflectors to other positions and/or by moving the stage on which the packaging substrate is supported. A plurality of device-to-device electrical interconnect paths can be subsequently tested with the charging electron beam and the probing electron beam. Accordingly, a plurality of test points can be tested sequentially and/or in parallel.
In
In
For an evaluation and defect classification, the signals of measurements of neighboring interconnect paths and/or previously collected data can be compared, such that opens, shorts, and leakages in the packaging substrate can be identified.
In some embodiments, each first surface contact point of the first die connection interface 31 is connected to one respective second surface contact point of the second die connection interface 32 by a device-to-device electrical interconnect path. For the sake of clarity, only the device-to-device electrical interconnect paths connecting the first and second die connection interfaces are depicted. According to some embodiments, which can be combined with other embodiments described herein, the first surface contact point may be connected to one second surface contact point. Alternatively, the first surface contact point may be connected to two or more second surface contact points. The two or more second surface contact points can be probed with the electron beam, for example, after charge has been applied to the first surface contact point.
According to the testing method described herein, the charging electron beam 111 is directed, particularly focused, on a first surface contact point of the first die connection interface 31, and the charging electron beam 111 is directed, particularly focused, on the associated second surface contact point of the second die connection interface 32. Signal electrons emitted from the second surface contact point are detected for testing whether an “open”-defect exists in the electrical interconnect path that connects the first and second surface contact points. Thereafter, the other surface contact points of the first and second die connection interfaces may be tested, particularly pairwise.
Alternatively or additionally, it can be tested in parallel or subsequently, whether the charging of one device-to-device electrical interconnect path leads to the charging of a surface contact point of another device-to-device electrical interconnect path, such that a “short”-defect can be determined. For example, the electron beam can be raster scanned over a portion of the packaging substrate to generate an image of the portion of the packaging substrate. The image can be evaluated, for example, by pattern recognition.
The packaging substrate 10 depicted in
The packaging substrate 10 depicted in
The packaging substrate 10 depicted in
The packaging substrate 10 depicted in
According to some embodiments, which can be combined with other embodiments described herein, test methods and/or apparatuses according to the present disclosure may be utilized during and/or after manufacturing of a packaging substrate. For example, a test may be applied on a packaging substrate that does not yet include all layers or structures. For example, a test may be conducted after a redistribution layer (RDL) has been manufactured and/or after a via layer has been manufactured. An RDL test and/or a via test can be provided. Yet further, a test may be provided on the finished packaging substrate.
According to some embodiments, which can be combined with other embodiments described herein, directing an electron-beam with the first landing energy on a portion of a packaging substrate can be a charging operation. The charging operation “writes” a charge to an electrical interconnect path or a network of electrical interconnect paths. Further, directing an electron-beam with a second landing energy on a portion of the packaging substrate can be an operation for detecting signal electrons. The electron beam at the second landing energy may “read” a charge of an electrical interconnect path or a network of electrical interconnect paths.
According to some embodiments, which can be combined with other embodiments described herein, charging of portions of the packaging substrate is reduced or avoided during detection of signal electrons, i.e. reading of a charge. Particularly, influencing of a charge of electrical interconnect paths or a network of electrical interconnect paths is avoided or kept to a minimum while detecting signal electrons, for example, detecting the charge previously provided.
For example, a network of electrical interconnect paths may include 5 surface contact points (or any number larger than 2). A charge can be applied, i.e. “written”, to a first surface contact point. The charge applied to the network of electrical interconnect paths can be “read” at a second surface contact point. It is beneficial not to change the charge of the network of electrical interconnect paths having the 5 surface contact points while “reading” the charge on the second to fifth surface contact point. Accordingly, charge generation can be reduced or avoided while detecting signal electrons by utilizing a neutral energy value for the landing energy.
The neutral energy values are material dependent. The material of the packaging substrate or a material of the surface of the packaging substrate is known and the landing energies can be adapted to the packaging substrate material for methods of testing the packaging substrate. The first neutral energy value can be a few hundred eV. The second neutral energy value can be between 1.5 keV and 2.5 keV for typical packaging substrates or typical surface contact points on a packaging substrate. According to some embodiments, which can be combined with other embodiments described herein, the landing energy for test methods can be chosen to be above the second neutral energy value for charging, to be between the first neutral energy value and the second neutral energy value for charging, or to be below the first neutral energy value. The landing energy can be adapted depending on the test strategy, the material of the packaging substrate, and/or the material of the surface contact points.
For landing energies in region 502, negative charging occurs, i.e. the total electron yield is smaller than 1. For landing energies in region 504, positive charging occurs, i.e. the total electron yield is larger than 1. The total electron yield being larger than 1 relates to the fact that more electrons leave the surface as compared to the number of electrons impinging on the surface. Thus, the packaging substrate or structures charge positively. For landing energies in region 506, negative charging occurs, i.e. the total electron yield is smaller than 1. The total electron yield being smaller than 1 relates to the fact that less electrons leave the surface as compared to the number of electrons impinging on the surface. The packaging substrates or structures charge negatively.
According to embodiments of the present disclosure, test structures, for example, regions of a packaging substrate and/or surface contact points can be charged positive or negative by the electron beam impact. Depending on the primary energy level, i.e. the landing energy, in relation to the secondary electron yield, the total electron yield can be controlled. The test point potential can be determined. A voltage contrast principle can be utilized for defect detection. According to some embodiments, which can be combined with other embodiments described herein, the landing energy can be changed to be higher or lower than the second neutral energy value. The landing energy of the electron beam is set to a required landing energy and positioned on a portion of the packaging substrate, for example, the surface contact point or test point on the packaging substrate. The electron-beam remains on the portion of the packaging substrate for a defined time to charge the portion of the packaging substrate positive or negative with respect to the environment of the portion of the packaging substrate. For example, the environment of a surface contact point under test can be one or more neighboring surface contact points.
According to some embodiments, which can be combined with other embodiments described herein, a portion of the packaging substrate is charge positively during the first test sequence and is charged negatively during the subsequent second test sequence. Different test sequences can be applied with positive or negative charges. Further, changing from positively charging to negatively charging and vice versa reduces the overall charge accumulated on the packaging substrate. The testing accuracy can be improved by reducing the overall charge that is accumulated on the packaging substrate.
According to some embodiments, which can be combined with other embodiments described herein, positively charging a region of the packaging substrate may include raising the potential of the packaging substrate to, for example, 1 V to 50 V, relative to ground potential. Negatively charging a region of the packaging substrate may include lowering the potential of the packaging substrate to, for example, −1 V to −50 V, relative to ground potential.
The image 600 shows positively charged surface contact points 602 and surface contact points 603. The surface contact points 603 may be uncharged or may be negatively charged. The surface contact points 603 are at a negative potential relative to the surface contact point 602. Electrons emitted from a more negative area are accelerated away from the packaging substrate or experience less deceleration by a positive charge on the packaging substrate. Accordingly, electrons emitted from a more negative area have a higher energy as compared to electrons emitted from a less negative area or positive area. Further, a positive charge on an area of the packaging substrate may hinder electrons from being emitted. The overall number of electrons may be reduced in a positively charged area.
According to some embodiments, which can be combined with other embodiments described herein, the higher energy of electrons from regions of the packaging substrate, which are more negatively charged as compared to other regions of the packaging substrate, allows the higher energy electrons to pass through an energy filter (see, for example, energy filter 142 in
According to some embodiments, which can be combined with other embodiments described herein, a portion of a packaging substrate as referred to herein may relate to an area, such as an area of the image 600 shown in
According to some embodiments, which can be combined with other embodiments described herein, charging of a portion of the packaging substrate can be provided over an area and/or at individual beam positions. Additionally or alternatively, reading, for example, testing, of a portion of the packaging substrate can be provided over an area and/or at individual beam positions.
While image 600 shows a portion or area of the packaging substrate, wherein the plurality of surface contact points is charged positive, for example, the dark lines of surface contact points 602 shown in
The image 610 shows lines of positively charged surface contact points, which are however interrupted to the right-hand side. Accordingly, considering charging of entire lines as shown in
For example,
The image 710 shown in
At operation 801, a field of view is defined. The field of view is defined to generate a scanning electron microscope (SEM) image with the electron-beam of the electron-beam column. For example, a field of view or a high-resolution SEM image, respectively, may have a field of view with a dimension of 20 mm or more and/or 60 mm or less. For example, an SEM image may have a field of view of up to about 40 mm×40 mm. According to some embodiments, which can be combined with other embodiments described herein, a resolution of an image, e.g. an SEM image, for an initial imaging, for charging or for defect detection can have a resolution of 0.1 μm to 2 μm .
At operation 802, the electron-beam of the at least one electron-beam column is provided on one or more portions of the packaging substrate with the neutral energy value, particularly the second control energy value. The electron-beam is scanned over the field of view defined in operation 801. A substrate charge up can be reduced or avoided by scanning the field of view with a landing energy close to or at the neutral energy value.
At operation 803, beam positioning and reference potentials can be determined from the image generated at operation 802. Particularly, reference potentials can be generated at charge positions, test positions, reading positions, and/or surface contact points in general. Without charge accumulation at the positions, i.e. during the imaging at operation 802, the “no defect” situation can be generated as a reference. In the absence of charge accumulation, the defects in electrical interconnect path do not directly influence the resulting image.
According to some embodiments, which can be combined with other embodiments described herein, the image generated at operation 802 can be analyzed, for example, by pattern recognition. The analysis can calibrate the electron-beam position. Accordingly, surface contact points can be addressed, for example, vector scanned, with calibrated beam positions. A further distortion calibration of the electron-beam in the field of view (FOV), particularly the field of view being significantly larger as compared to an SEM image having a field of view with a size of 1 mm or below, can be avoided.
At operation 804, the electron beam is directed on one or more portions of the packaging substrate to be charged. The one or more portions of the packaging substrate can be charged positive or negative, for example at the first landing energy. All test points of the connected net or the electrical interconnect path will be charged to the same potential if there is no defect in the electrical interconnect path.
At operation 805, signal electrons are detected to test one or more electrical interconnect paths of the packaging substrate. For example, a voltage contrast image between a good reference die and the tested diet can be compared. Additionally or alternatively, a voltage difference as compared to the reference image generated at operation 802 can be generated according to embodiments, which can be combined with other embodiments described herein.
Differences in the voltage contrast image indicate defects. Voltage differences at predetermined beam positions corresponding, for example, to surface contact points can be evaluated. An image including voltage contrast information can be generated. Pattern recognition can be provided on at least portions of the image to evaluate deviations of the network of interconnect paths as compared to the desired packaging substrate. Additionally or alternatively, the voltage of surface contact points to be tested, i.e. “read” can be measured by determining the signal electrons, particularly with the detector having an energy filter. The surface contact point can be measured, for example, the voltage contrast of the surface contact point can be measured.
According to embodiments of the present disclosure, a measurement of a first surface contact point can be provided at a first beam position and a measurement of a second surface contact point can be provided at a second beam position. Vector scanning can be provided to move the electron-beam from a first beam position to a second beam position, i.e. to directly move the electron-beam from the first beam position to the second beam position. Only a few surface contact points, for example, two surface contact points, or a small number (<20) of surface contact points, corresponding to beam positions, may be required to measure one network of electrical interconnect paths.
Embodiments of the present disclosure can include generation of SEM images. The apparatuses for testing according to embodiments of the present disclosure can be configured to generate SEM images. The images can have a resolution of 3 μm or below and/or 0.1 μm or above. Beam positioning setup of beam positions on, for example, surface contact points can be based on the SEM image and may automatically be provided. No electron-beam distortion calibration is required as the positioning can be calculated based on the SEM image. The individual beam positions can be calibrated by pattern recognition, i.e. by utilizing unique features of the packaging substrate during pattern recognition, for electron-beam alignment.
According to some embodiments, which can be combined with other embodiments described herein, directing the electron beam with the second landing energy is provided on a second portion of the packaging substrate and the detecting of the signal electrons is provided upon impingement of the electron beam with the second landing energy. For example, the first portion of the packaging substrate and the second portion of the packaging substrate can be different. Particularly the first portion can be one or more surface contact points and the second portion can be one or more different surface contact points or an area which is raster scanned, wherein the area includes the one or more different surface contact points.
According to some embodiments, which can be combined with other embodiments described herein, directing the electron beam with the second landing energy is provided on the first portion of the packaging substrate. Charging of portions of the packaging substrate with different landing energies can be utilized to control the charge up of the packaging substrate. According to some embodiments, which can be combined with other embodiments described herein, a method may further include directing the electron beam of the at least one electron beam column with a third landing energy different from the first landing energy and the second landing energy on the packaging substrate. Particularly, detecting signal electrons for reading voltage contrast information may be provided at the third landing energy. The third landing energy can be different from a first charging landing energy and/or can be different from a second charging landing energy.
According to yet further embodiments, the electron beam of the at least one electron beam column can be directed onto a packaging substrate with a further landing energy different from the first landing energy and the second landing energy on the first portion of the packaging substrate. For example, the further landing energy is at a neutral charging energy of the packaging substrate. The first landing energy can be larger than the first landing energy and the second landing energy is smaller than the further landing energy.
According to embodiments of the present disclosure, an electron-beam of an electron beam column is directed on a first portion of the packaging substrate with the first landing energy. Further, the electron beam is directed on the packaging substrate with the second landing energy, wherein the second landing energy is different from the first energy. The charge on portions of the packaging substrate can be controlled. Additionally or alternatively, during some test sequences, charge is applied, during some test sequences no or substantially no charge is applied, and during some test sequences charge can be removed. Particularly, charge can be applied during a “writing” operation. Beneficially, no charge is applied during a “reading” operation.
According to some embodiments, which can be combined with other embodiments described herein, the portions of the substrate on which the electron beam is directed are beam positions, particularly beam positions corresponding to surface contact points. The individual beam positions can be addressed by vector scanning, that is, the electron beam can be directed on individual positions, for example, wherein no region needs to be scanned. The capability to provide charge on individual beam positions and to read the charge at individual beam positions allows for a fast testing operation. Further, a plurality of test sequences may be generated, wherein different patterns can be “written” on individual surface contact points of the packaging substrate. A pattern may be provided, for example, in form of a checkerboard having positions of negative charge and positions of positive charge. Accordingly, the overall charge on the packaging substrate is reduced. According to some embodiments, which can be combined with other embodiments described herein, a pattern such as a checkerboard may also be provided on regions rather than on individual locations.
According to some embodiments, which can be combined with other embodiments described herein, reading of a charge, i.e. detecting signal electrons, at the beam position for which the charge or the potential is to be determined, can be provided at the beam position of writing. For example, the charge can be applied to a first surface contact point. After a predetermined time period, it can be measured whether the charge can be detected at the first surface contact point. Additionally or alternatively, detecting signal electrons, i.e. “reading”, can be provided at a different beam position, for example, at a second surface contact point that is connected to the first surface contact point, on which the charge has been applied. The electrical connection between the first surface contact point and the second surface contact point provides the charge written to the first surface contact point to the second surface contact point. Accordingly, the charge can be detected at the second surface contact point if the electrical connection is not defective. Yet further additionally or alternatively, detecting signal electrons, i.e. “reading”, can be provided at further different beam positions, for example, at a third surface contact point that is not connected to the first surface contact point. As the third surface contact point is not connected to the first surface contact point, the charge should not be detectable for a non-defective packaging substrate. According to some embodiments, which can be combined with other embodiments described herein, one or more third surface contact points neighboring the second surface contact point and/or neighboring the first surface contact point can be measured. Unless a short would be present to a neighboring surface contact point, the charge provided on the first surface contact point should not be detectable at the one or more third surface contact points.
As described above, individual beam positions may be addressed by vector scanning and test sequences may be provided by directing the electron beam on individual, i.e. distinct, beam positions only. Yet further, test sequences may include raster scanning of areas of the substrate. Accordingly, portions of the packaging substrate may also be referred to as regions, which are raster scanned, wherein an image of the region is generated. Particularly, a “reading” operation can be provided based on an image raster scanned in a region of the packaging substrate.
According to some embodiments, which can be combined with other embodiments described herein, imaging a region of the packaging substrate, for example, by raster scanning, may also be provided without charge generation. For example, a reference image can be generated. Reference potentials can be determined from the reference image generated without charge generation. Additionally or alternatively, beam positioning calibration can be provided based on the reference image.
According to yet further embodiments, defect review can be provided by the methods of testing packaging substrate according to embodiments described herein. For example, a list of potentially defective positions may be generated by an automated optical inspection system (AOI system). A list of positions can be subject to defect review. Charge can be provided on structures at the positions to be reviewed. For example, the charge can be provided by directing the electron-beam on the surface contact point or by scanning the electron-beam over an area including the position to be reviewed. An image can be generated to review the position or area having the potential defect. According to some embodiments, which can be combined with other embodiments described herein, the image can be generated by detecting signal electrons and particularly including voltage contrast information.
Embodiments of the present disclosure provide one or more of the following advantages. A contact free electrical test of packaging substrates as disclosed herein can be provided, wherein electrical charge can be controlled for electrical defect detection. In light of the flexibility of the electron-beam, increased testing speed can be provided. A test including 100% of the electrical interconnection path is possible during volume production. Further, the flexibility of the electron-beam allows for testing and a flexible setup for different AP/PLP substrate layouts. The test methods and apparatuses disclosed herein further allow for being scalable to smaller dimensions, particularly if technical development moves towards smaller structure sizes. The testing of the packaging substrates is damage free.
While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/EP2022/058997 | 4/5/2022 | WO |
