Number | Date | Country | Kind |
---|---|---|---|
94 05793 | May 1994 | FRX |
Filing Document | Filing Date | Country | Kind | 102e Date | 371c Date |
---|---|---|---|---|---|
PCT/FR95/00619 | 5/11/1995 | 6/3/1996 | 6/3/1996 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO95/31706 | 11/23/1995 |
Number | Name | Date | Kind |
---|---|---|---|
3383238 | Unzicker et al. | May 1968 | |
3570449 | Blecherman et al. | Mar 1971 | |
3800738 | Tassara | Apr 1974 | |
4024291 | Wilmanns | May 1977 | |
4121537 | Maruyama et al. | Oct 1978 | |
4948259 | Enke et al. | Aug 1990 | |
5154810 | Kamerling et al. | Oct 1992 | |
5392124 | Barbee et al. | Feb 1995 | |
5450205 | Sawin et al. | Sep 1995 |
Number | Date | Country |
---|---|---|
2 344 643 | Oct 1977 | FRX |
60-229 255 | Nov 1985 | JPX |
63-157869 | Jun 1988 | JPX |
Entry |
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H.L. Caswell et al., "Residual Stress Measuring Instrument", IBM Technical Disclosure Bulletin, vol. 4, No. 7, Dec. 1961, New York, p. 63. |
C.M. Su et al., "In Situ Mechanical Relaxation of CU Films Growing on a SI Substrate", Applied Physics Letters, vol. 63, No. 25, Dec. 1993, New York, pp. 3437-3439. |
Y.S. Chen et al., "Stress Measurements on Multilevel Thin Film Dielectric Layers Used in SI Integrated Circuits", Journal of Vacuum Science and Technology:Part A, vol. 4, No. 3, May 1986, New York, pp. 645-649. |