Method and system for cooling a pump

Information

  • Patent Grant
  • 7491036
  • Patent Number
    7,491,036
  • Date Filed
    Friday, November 12, 2004
    19 years ago
  • Date Issued
    Tuesday, February 17, 2009
    15 years ago
Abstract
A processing system utilizing a supercritical fluid for treating a substrate is described as having a pump for recirculating the supercritical fluid over the substrate. For various applications in supercritical fluid processing, the fluid temperature for the treatment process can elevate above the temperature acceptable for safe operation of the pump. Therefore, in accordance with one embodiment, a fraction of supercritical fluid from the primary recirculating flow of supercritical fluid over the substrate is circulated from the pressure side of the pump, through a heat exchanger to lower the temperature of the supercritical fluid, through the pump, and it is returned to the primary flow on the suction side of the pump. In accordance with yet another embodiment, supercritical fluid is circulated through the pump from an independent source to vent.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to co-pending U.S. patent application Ser. No. 10/987,067, entitled “Method and System for Treating a Substrate Using a Supercritical Fluid”, filed on even date herewith. The entire content of this application is herein incorporated by reference in its entirety.


BACKGROUND OF THE INVENTION

1. Field of the Invention


The present invention relates to a system for treating a substrate using a supercritical fluid and, more particularly, to a system for flowing a high temperature supercritical fluid.


2. Description of Related Art


During the fabrication of semiconductor devices for integrated circuits (ICs), a sequence of material processing steps, including both pattern etching and deposition processes, are performed, whereby material is removed from or added to a substrate surface, respectively. During, for instance, pattern etching, a pattern formed in a mask layer of radiation-sensitive material, such as photoresist, using for example photolithography, is transferred to an underlying thin material film using a combination of physical and chemical processes to facilitate the selective removal of the underlying material film relative to the mask layer.


Thereafter, the remaining radiation-sensitive material, or photoresist, and post-etch residue, such as hardened photoresist and other etch residues, are removed using one or more cleaning processes. Conventionally, these residues are removed by performing plasma ashing in an oxygen plasma, followed by wet cleaning through immersion of the substrate in a liquid bath of stripper chemicals.


Until recently, dry plasma ashing and wet cleaning were found to be sufficient for removing residue and contaminants accumulated during semiconductor processing. However, recent advancements for ICs include a reduction in the critical dimension for etched features below a feature dimension acceptable for wet cleaning, such as a feature dimension below approximately 45 to 65 nanometers (nm). Moreover, the advent of new materials, such as low dielectric constant (low-k) materials, limits the use of plasma ashing due to their susceptibility to damage during plasma exposure.


Therefore, at present, interest has developed for the replacement of dry plasma ashing and wet cleaning. One interest includes the development of dry cleaning systems utilizing a supercritical fluid as a carrier for a solvent, or other residue removing composition. At present, the inventors have recognized that conventional processes are deficient in, for example, cleaning residue from a substrate, particularly those substrates following complex etching processes, or having high aspect ratio features.


SUMMARY OF THE INVENTION

The present invention provides a system for treating a substrate using a supercritical fluid. In one embodiment, the invention provides a fluid flow system for treating a substrate using a high temperature supercritical fluid, wherein the temperature of the supercritical fluid is equal to approximately 80° C. or greater.


According to another embodiment, the fluid flow system includes: a primary flow line coupled to a high pressure processing system and configured to supply supercritical fluid at a fluid temperature equal to or greater than 80° C. to the high pressure processing system; a high temperature pump coupled to the primary flow line and configured to move the supercritical fluid through the primary flow line to the high pressure processing system, wherein the high temperature pump comprises a coolant inlet configured to receive a coolant and a coolant outlet configured to discharge the coolant; and a heat exchanger coupled to the coolant inlet, and configured to lower a coolant temperature of the coolant to a temperature less than or equal to the fluid temperature of the supercritical fluid.





BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:



FIG. 1 presents a simplified schematic representation of a processing system;



FIG. 2 presents another simplified schematic representation of a processing system;



FIG. 3 presents another simplified schematic representation of a processing system;



FIGS. 4A and 4B depict a fluid injection manifold for introducing fluid to a processing system;



FIG. 5 illustrates a method of treating a substrate in a processing system according to an embodiment of the invention;



FIG. 6A depicts a system configured to cool a pump according to an embodiment;



FIG. 6B depicts a system configured to cool a pump according to another embodiment; and



FIG. 7 provides a cross-sectional view of a pumping system according to another embodiment.





DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

In the following description, to facilitate a thorough understanding of the invention and for purposes of explanation and not limitation, specific details are set forth, such as a particular geometry of the processing system and various descriptions of the system components. However, it should be understood that the invention may be practiced with other embodiments that depart from these specific details.


Referring now to the drawings, wherein like reference numerals designate identical or corresponding parts throughout the several views, FIG. 1 illustrates a processing system 100 according to an embodiment of the invention. In the illustrated embodiment, processing system 100 is configured to treat a substrate 105 with a high pressure fluid, such as a fluid in a supercritical state, with or without other additives, such as process chemistry, at an elevated temperature above the fluid's critical temperature and greater than or equal to approximately 80° C. The processing system 100 comprises processing elements that include a processing chamber 110, a fluid flow system 120, a process chemistry supply system 130, a high pressure fluid supply system 140, and a controller 150, all of which are configured to process substrate 105. The controller 150 can be coupled to the processing chamber 110, the fluid flow system 120, the process chemistry supply system 130, and the high pressure fluid supply system 140. Alternately, or in addition, controller 150 can be coupled to a one or more additional controllers/computers (not shown), and controller 150 can obtain setup and/or configuration information from an additional controller/computer.


In FIG. 1, singular processing elements (110, 120, 130, 140, and 150) are shown, but this is not required for the invention. The processing system 100 can comprise any number of processing elements having any number of controllers associated with them in addition to independent processing elements.


The controller 150 can be used to configure any number of processing elements (110, 120, 130, and 140), and the controller 150 can collect, provide, process, store, and display data from processing elements. The controller 150 can comprise a number of applications for controlling one or more of the processing elements. For example, controller 150 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or control one or more processing elements.


Referring still to FIG. 1, the fluid flow system 120 is configured to flow fluid and chemistry from the supplies 130 and 140 through the processing chamber 110. The fluid flow system 120 is illustrated as a recirculation system through which the fluid and chemistry recirculate from and back to the processing chamber 110 via a primary flow line 620. This recirculation is most likely to be the preferred configuration for many applications, but this is not necessary to the invention. Fluids, particularly inexpensive fluids, can be passed through the processing chamber 110 once and then discarded, which might be more efficient than reconditioning them for re-entry into the processing chamber. Accordingly, while the fluid flow system is described as a recirculating system in the exemplary embodiments, a non-recirculating system may, in some cases, be substituted. This fluid flow system or recirculation system 120 can include one or more valves (not shown) for regulating the flow of a processing solution through the fluid flow system 120 and through the processing chamber 110. The fluid flow system 120 can comprise any number of back-flow valves, filters, pumps, and/or heaters (not shown) for maintaining a specified temperature, pressure or both for the processing solution and for flowing the process solution through the fluid flow system 120 and through the processing chamber 110. Furthermore, any one of the many components provided within the fluid flow system 120 may be heated to a temperature consistent with the specified process temperature.


Some components, such as a fluid flow or recirculation pump, may require cooling in order to permit proper functioning. For example, some commercially available pumps, having specifications required for processing performance at high pressure and cleanliness during supercritical processing, comprise components that are limited in temperature. Therefore, as the temperature of the fluid and structure are elevated, cooling of the pump is required to maintain its functionality. Fluid flow system 120 for circulating the supercritical fluid through high pressure processing system 100 can comprise a primary flow line 620 coupled to high pressure processing chamber 110, and configured to supply the supercritical fluid at a fluid temperature equal to or greater than 80° C. to the high pressure processing chamber 110, and a high temperature pump 600, shown and described below with reference to FIGS. 6A and 6B, coupled to the primary flow line 620. The high temperature pump can be configured to move the supercritical fluid through the primary flow line 620 to the high pressure processing chamber 110, wherein the high temperature pump comprises a coolant inlet configured to receive a coolant and a coolant outlet configured to discharge the coolant. A heat exchanger coupled to the coolant inlet can be configured to lower a coolant temperature of the coolant to a temperature less than or equal to the fluid temperature of the supercritical fluid.


As illustrated in FIG. 6A, one embodiment is provided for cooling a high temperature pump 600 associated with fluid flow system 120 (or 220, described below with reference to FIG. 2) by diverting high pressure fluid from a primary flow line 620 to the high pressure processing chamber 110 (or 210) through a heat exchanger 630, through the pump 600, and back to the primary flow line 620. For example, a pump impeller 610 housed within pump 600 can move high pressure fluid from a suction side 622 of primary flow line 620 through an inlet 612 and through an outlet 614 to a pressure side 624 of the primary flow line 620. A fraction of high pressure fluid can be diverted through an inlet valve 628, through heat exchanger 630, and enter pump 600 through coolant inlet 632. Thereafter, the fraction of high pressure fluid utilized for cooling can exit from pump 600 at coolant outlet 634 and return to the primary flow line 620 through outlet valve 626.


Alternatively, as illustrated in FIG. 6B, another embodiment is provided for cooling pump 600 using a secondary flow line 640. A high pressure fluid, such as a supercritical fluid, from a fluid source (not shown) is directed through heat exchanger 630 (to lower the temperature of the fluid), and then enters pump 600 through coolant inlet 632, passes through pump 600, exits through coolant outlet 634, and continues to a discharge system (not shown). The fluid source can include a supercritical fluid source, such as a supercritical carbon dioxide source. The fluid source may or may not be a member of the high pressure fluid supply system 140 (or 240) described in FIG. 1 (or FIG. 2). The discharge system can include a vent, or the discharge system can include a recirculation system having a pump configured to recirculate the high pressure fluid through the heat exchanger 630 and pump 600.


In yet another embodiment, the pump depicted in FIGS. 6A and 6B can include the pump assembly provided in FIG. 7. As illustrated in FIG. 7, a brushless compact canned pump assembly 700 is shown having a pump section 701 and a motor section 702. The motor section 702 drives the pump section 701. The pump section 701 incorporates a centrifugal impeller 720 rotating within the pump section 701, which includes an inner pump housing 705 and an outer pump housing 715. An inlet 710 (on the suction side of pump assembly 700) delivers pump fluid to the impeller 720, and the impeller 720 pumps the fluid to an outlet 730 (on the pressure side of the pump assembly 700).


The motor section 702 includes an electric motor having a stator 770 and a rotor 760. The electric motor can be a variable speed motor which allows for changing speed and/or load characteristics. Alternatively, the electric motor can be an induction motor. The rotor 760 is formed inside a non-magnetic stainless steel sleeve 780. The rotor 760 is canned to isolate it from contact with the fluid. The rotor 760 preferably has a diameter between 1.5 inches and 2 inches. The stator 770 is also canned to isolate it from the fluid being pumped. A pump shaft 750 extends away from the motor section 702 to the pump section 701 where it is affixed to an end of the impeller 720. The pump shaft 750 can be welded to the stainless steel sleeve 780 such that torque is transferred through the stainless steel sleeve 780. The impeller 720 preferably has a diameter between 1 inch and 2 inches, and includes rotating blades. The rotor 760 can, for instance, have a maximum speed of 60,000 revolutions per minute (rpm); however, it may be more or it may be less. Of course other speeds and other impeller sizes will achieve different flow rates. With brushless DC technology, the rotor 760 is actuated by electromagnetic fields that are generated by electric current flowing through windings of the stator 770. During operation, the pump shaft 750 transmits torque from the motor section 702 to the pump section 701 to pump the fluid. The motor section 702 can include an electrical controller (not shown) suitable for operating the pump assembly 700. The electrical controller (not shown) can include a commutation controller (not shown) for sequentially firing or energizing the windings of the stator 770.


The rotor 760 is potted in epoxy and encased in the stainless steel sleeve 780 to isolate the rotor 760 from the fluid. The stainless steel sleeve 780 creates a high pressure and substantially hermetic seal. The stainless steel sleeve 780 has a high resistance to corrosion and maintains high strength at very high temperatures, which substantially eliminates the generation of particles. Chromium, nickel, titanium, and other elements can also be added to stainless steels in varying quantities to produce a range of stainless steel grades, each with different properties.


The stator 770 is also potted in epoxy and sealed from the fluid via a polymer sleeve 790. The polymer sleeve 790 is preferably a PEEK™ (Polyetheretherketone) sleeve. The PEEK™ sleeve forms a casing for the stator 770. Because the polymer sleeve 790 is an exceptionally strong, highly crosslinked engineering thermoplastic, it resists chemical attack and permeation by CO2 even at supercritical conditions and substantially eliminates the generation of particles. Further, the PEEK™ material has a low coefficient of friction and is inherently flame retardant. Other high-temperature and corrosion resistant materials, including alloys, can be used to seal the stator 770 from the fluid.


The pump shaft 750 is supported by a first corrosion resistant bearing 740 and a second corrosion resistant bearing 741. The bearings 740 and 741 can be ceramic bearings, hybrid bearings, full complement bearings, foil journal bearings, or magnetic bearings. The bearings 740 and 741 can be made of silicon nitride balls combined with bearing races made of Cronidur™ 30.


Additionally, pump assembly 700 includes coolant inlet 799 and coolant outlet 800 configured to permit the flow of a coolant through pump assembly 700 for cooling.


Referring again to FIG. 1, the processing system 100 can comprise high pressure fluid supply system 140. The high pressure fluid supply system 140 can be coupled to the fluid flow system 120, but this is not required. In alternate embodiments, high pressure fluid supply system 140 can be configured differently and coupled differently. For example, the fluid supply system 140 can be coupled directly to the processing chamber 110. The high pressure fluid supply system 140 can include a supercritical fluid supply system. A supercritical fluid as referred to herein is a fluid that is in a supercritical state, which is that state that exists when the fluid is maintained at or above the critical pressure and at or above the critical temperature on its phase diagram. In such a supercritical state, the fluid possesses certain properties, one of which is the substantial absence of surface tension. Accordingly, a supercritical fluid supply system, as referred to herein, is one that delivers to a processing chamber a fluid that assumes a supercritical state at the pressure and temperature at which the processing chamber is being controlled. Furthermore, it is only necessary that at least at or near the critical point the fluid is in substantially a supercritical state at which its properties are sufficient, and exist long enough, to realize their advantages in the process being performed. Carbon dioxide, for example, is a supercritical fluid when maintained at or above a pressure of about 1070 psi at a temperature of 31° C. This state of the fluid in the processing chamber may be maintained by operating the processing chamber at 2000 to 10000 psi at a temperature of approximately 80° C. or greater.


As described above, the fluid supply system 140 can include a supercritical fluid supply system, which can be a carbon dioxide supply system. For example, the fluid supply system 140 can be configured to introduce a high pressure fluid having a pressure substantially near the critical pressure for the fluid. Additionally, the fluid supply system 140 can be configured to introduce a supercritical fluid, such as carbon dioxide in a supercritical state. Additionally, for example, the fluid supply system 140 can be configured to introduce a supercritical fluid, such as supercritical carbon dioxide, at a pressure ranging from approximately the critical pressure of carbon dioxide to 10,000 psi. Examples of other supercritical fluid species useful in the broad practice of the invention include, but are not limited to, carbon dioxide (as described above), oxygen, argon, krypton, xenon, ammonia, methane, methanol, dimethyl ketone, hydrogen, water, and sulfur hexafluoride. The fluid supply system can, for example, comprise a carbon dioxide source (not shown) and a plurality of flow control elements (not shown) for generating a supercritical fluid. For example, the carbon dioxide source can include a CO2 feed system, and the flow control elements can include supply lines, valves, filters, pumps, and heaters. The fluid supply system 140 can comprise an inlet valve (not shown) that is configured to open and close to allow or prevent the stream of supercritical carbon dioxide from flowing into the processing chamber 110. For example, controller 150 can be used to determine fluid parameters such as pressure, temperature, process time, and flow rate.


Referring still to FIG. 1, the process chemistry supply system 130 is coupled to the fluid flow system 120, but this is not required for the invention. In alternate embodiments, the process chemistry supply system 130 can be configured differently, and can be coupled to different elements in the processing system 100. The process chemistry is introduced by the process chemistry supply system 130 into the fluid introduced by the fluid supply system 140 at ratios that vary with the substrate properties, the chemistry being used and the process being performed in the processing chamber 110. Usually the ratio is roughly 1 to 15 percent by volume, which, for a chamber, recirculation system and associated plumbing having a volume of about one liter amounts to about 10 to 150 milliliters of additive in most cases, but the ratio may be higher or lower.


The process chemistry supply system 130 can be configured to introduce one or more of the following process compositions, but not limited to: cleaning compositions for removing contaminants, residues, hardened residues, photoresist, hardened photoresist, post-etch residue, post-ash residue, post chemical-mechanical polishing (CMP) residue, post-polishing residue, or post-implant residue, or any combination thereof; cleaning compositions for removing particulate; drying compositions for drying thin films, porous thin films, porous low dielectric constant materials, or air-gap dielectrics, or any combination thereof; film-forming compositions for preparing dielectric thin films, metal thin films, or any combination thereof; healing compositions for restoring the dielectric constant of low dielectric constant (low-k) films; sealing compositions for sealing porous films; or any combination thereof. Additionally, the process chemistry supply system 130 can be configured to introduce solvents, co-solvents, surfactants, etchants, acids, bases, chelators, oxidizers, film-forming precursors, or reducing agents, or any combination thereof.


The process chemistry supply system 130 can be configured to introduce N-methyl pyrrolidone (NMP), diglycol amine, hydroxyl amine, di-isopropyl amine, tri-isopropyl amine, tertiary amines, catechol, ammonium fluoride, ammonium bifluoride, methylacetoacetamide, ozone, propylene glycol monoethyl ether acetate, acetylacetone, dibasic esters, ethyl lactate, CHF3, BF3, HF, other fluorine containing chemicals, or any mixture thereof. Other chemicals such as organic solvents may be utilized independently or in conjunction with the above chemicals to remove organic materials. The organic solvents may include, for example, an alcohol, ether, and/or glycol, such as acetone, diacetone alcohol, dimethyl sulfoxide (DMSO), ethylene glycol, methanol, ethanol, propanol, or isopropanol (IPA). For further details, see U.S. Pat. No. 6,306,564B1, filed May 27, 1998, and titled “REMOVAL OF RESIST OR RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE”, and U.S. Pat. No. 6,509,141B2, filed Sep. 3, 1999, and titled “REMOVAL OF PHOTORESIST AND PHOTORESIST RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE PROCESS,” both incorporated by reference herein.


Additionally, the process chemistry supply system 130 can comprise a cleaning chemistry assembly (not shown) for providing cleaning chemistry for generating supercritical cleaning solutions within the processing chamber. The cleaning chemistry can include peroxides and a fluoride source. For example, the peroxides can include hydrogen peroxide, benzoyl peroxide, or any other suitable peroxide, and the fluoride sources can include fluoride salts (such as ammonium fluoride salts), hydrogen fluoride, fluoride adducts (such as organo-ammonium fluoride adducts), and combinations thereof. Further details of fluoride sources and methods of generating supercritical processing solutions with fluoride sources are described in U.S. patent application Ser. No. 10/442,557, filed May 20, 2003, and titled “TETRA-ORGANIC AMMONIUM FLUORIDE AND HF IN SUPERCRITICAL FLUID FOR PHOTORESIST AND RESIDUE REMOVAL”, and U.S. patent application Ser. No. 10/321,341, filed Dec. 16, 2002, and titled “FLUORIDE IN SUPERCRITICAL FLUID FOR PHOTORESIST POLYMER AND RESIDUE REMOVAL,” both incorporated by reference herein.


Furthermore, the process chemistry supply system 130 can be configured to introduce chelating agents, complexing agents and other oxidants, organic and inorganic acids that can be introduced into the supercritical fluid solution with one or more carrier solvents, such as N, N-dimethylacetamide (DMAc), gamma-butyrolactone (BLO), dimethyl sulfoxide (DMSO), ethylene carbonate (EC), N-methyl pyrrolidone (NMP), dimethylpiperidone, propylene carbonate, and alcohols (such a methanol, ethanol and 2-propanol).


Moreover, the process chemistry supply system 130 can comprise a rinsing chemistry assembly (not shown) for providing rinsing chemistry for generating supercritical rinsing solutions within the processing chamber. The rinsing chemistry can include one or more organic solvents including, but not limited to, alcohols and ketone. In one embodiment, the rinsing chemistry can comprise sulfolane, also known as thiocyclopentane-1,1-dioxide, (cyclo)tetramethylene sulphone and 2,3,4,5-tetrahydrothiophene-1,1-dioxide, which can be purchased from a number of venders, such as Degussa Stanlow Limited, Lake Court, Hursley Winchester SO21 2LD UK.


Moreover, the process chemistry supply system 130 can be configured to introduce treating chemistry for curing, cleaning, healing (or restoring the dielectric constant of low-k materials), or sealing, or any combination, low dielectric constant films (porous or non-porous). The chemistry can include hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS), dimethylsilyldiethylamine (DMSDEA), tetramethyldisilazane (TMDS), trimethylsilyldimethylamine (TMSDMA), dimethylsilyldimethylamine (DMSDMA), trimethylsilyidiethylamine (TMSDEA), bistrimethylsilyl urea (BTSU), bis(dimethylamino)methyl silane (B[DMA]MS), bis (dimethylamino)dimethyl silane (B[DMA]DS), HMCTS, dimethylaminopentamethyldisilane (DMAPMDS), dimethylaminodimethyldisilane (DMADMDS), disila-aza-cyclopentane (TDACP), disila-oza-cyclopentane (TDOCP), methyltrimethoxysilane (MTMOS), vinyltrimethoxysilane (VTMOS), or trimethylsilylimidazole (TMSI). Additionally, the chemistry may include N-tert-butyl-1,1-dimethyl-1-(2,3,4,5-tetramethyl-2,4-cyclopentadiene-1-yl)silanamine, 1,3-diphenyl-1,1,3,3-tetramethyldisilazane, or tert-butylchlorodiphenylsilane. For further details, see U.S. patent application Ser. No. 10/682,196, filed Oct. 10, 2003, and titled “METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM,” and U.S. patent application Ser. No. 10/379,984, filed Mar. 4, 2003, and titled “METHOD OF PASSIVATING LOW DIELECTRIC MATERIALS IN WAFER PROCESSING,” both incorporated by reference herein.


Additionally, the process chemistry supply system 130 can be configured to introduce peroxides during, for instance, cleaning processes. The peroxides can include organic peroxides, or inorganic peroxides, or a combination thereof. For example, organic peroxides can include 2-butanone peroxide; 2,4-pentanedione peroxide; peracetic acid; t-butyl hydroperoxide; benzoyl peroxide; or m-chloroperbenzoic acid (mCPBA). Other peroxides can include hydrogen peroxide.


The processing chamber 110 can be configured to process substrate 105 by exposing the substrate 105 to fluid from the fluid supply system 140, or process chemistry from the process chemistry supply system 130, or a combination thereof in a processing space 112. Additionally, processing chamber 110 can include an upper chamber assembly 114, and a lower chamber assembly 115.


The upper chamber assembly 112 can comprise a heater (not shown) for heating the processing chamber 110, the substrate 105, or the processing fluid, or a combination of two or more thereof. Alternately, a heater is not required. Additionally, the upper chamber assembly 112 can include flow components for flowing a processing fluid through the processing chamber 110. In one example, a circular flow pattern can be established. Alternately, the flow components for flowing the fluid can be configured differently to affect a different flow pattern. Alternatively, the upper chamber assembly 112 can be configured to fill the processing chamber 110.


The lower chamber assembly 115 can include a platen 116 configured to support substrate 105 and a drive mechanism 118 for translating the platen 116 in order to load and unload substrate 105, and seal lower chamber assembly 115 with upper chamber assembly 114. The platen 116 can also be configured to heat or cool the substrate 105 before, during, and/or after processing the substrate 105. For example, the platen 116 can include one or more heater rods configured to elevate the temperature of the platen to approximately 80° C. or greater. Additionally, the lower assembly 115 can include a lift pin assembly for displacing the substrate 105 from the upper surface of the platen 116 during substrate loading and unloading.


Additionally, controller 150 includes a temperature control system coupled to one or more of the processing chamber 110, the fluid flow system 120 (or recirculation system), the platen 116, the high pressure fluid supply system 140, or the process chemistry supply system 130. The temperature control system is coupled to heating elements embedded in one or more of these systems, and configured to elevate the temperature of the supercritical fluid to approximately 80° C. or greater. The heating elements can, for example, include resistive heating elements.


A transfer system (not shown) can be used to move a substrate into and out of the processing chamber 110 through a slot (not shown). In one example, the slot can be opened and closed by moving the platen 116, and in another example, the slot can be controlled using a gate valve (not shown).


The substrate can include semiconductor material, metallic material, dielectric material, ceramic material, or polymer material, or a combination of two or more thereof. The semiconductor material can include Si, Ge, Si/Ge, or GaAs. The metallic material can include Cu, Al, Ni, Pb, Ti, and/or Ta. The dielectric material can include silica, silicon dioxide, quartz, aluminum oxide, sapphire, low dielectric constant materials, Teflon®, and/or polyimide. The ceramic material can include aluminum oxide, silicon carbide, etc.


The processing system 100 can also comprise a pressure control system (not shown). The pressure control system can be coupled to the processing chamber 110, but this is not required. In alternate embodiments, the pressure control system can be configured differently and coupled differently. The pressure control system can include one or more pressure valves (not shown) for exhausting the processing chamber 110 and/or for regulating the pressure within the processing chamber 110. Alternately, the pressure control system can also include one or more pumps (not shown). For example, one pump may be used to increase the pressure within the processing chamber, and another pump may be used to evacuate the processing chamber 110. In another embodiment, the pressure control system can comprise seals for sealing the processing chamber. In addition, the pressure control system can comprise an elevator for raising and lowering the substrate 105 and/or the platen 116.


Furthermore, the processing system 100 can comprise an exhaust control system. The exhaust control system can be coupled to the processing chamber 110, but this is not required. In alternate embodiments, the exhaust control system can be configured differently and coupled differently. The exhaust control system can include an exhaust gas collection vessel (not shown) and can be used to remove contaminants from the processing fluid. Alternately, the exhaust control system can be used to recycle the processing fluid.


Referring now to FIG. 2, a processing system 200 is presented according to another embodiment. In the illustrated embodiment, processing system 200 comprises a processing chamber 210, a recirculation system 220, a process chemistry supply system 230, a fluid supply system 240, and a controller 250, all of which are configured to process substrate 205. The controller 250 can be coupled to the processing chamber 210, the recirculation system 220, the process chemistry supply system 230, and the fluid supply system 240. Alternately, controller 250 can be coupled to a one or more additional controllers/computers (not shown), and controller 250 can obtain setup and/or configuration information from an additional controller/computer.


As shown in FIG. 2, the recirculation system 220 can include a recirculation fluid heater 222, a pump 224, and a filter 226. The process chemistry supply system 230 can include one or more chemistry introduction systems, each introduction system having a chemical source 232, 234, 236, and an injection system 233, 235, 237. The injection systems 233, 235, 237 can include a pump (not shown) and an injection valve (not shown). The fluid supply system 240 can include a supercritical fluid source 242, a pumping system 244, and a supercritical fluid heater 246. In addition, one or more injection valves and/or exhaust valves may be utilized with the fluid supply system 240.


The processing chamber 210 can be configured to process substrate 205 by exposing the substrate 205 to fluid from the fluid supply system 240, or process chemistry from the process chemistry supply system 230, or a combination thereof in a processing space 212. Additionally, processing chamber 210 can include an upper chamber assembly 214, and a lower chamber assembly 215 having a platen 216 and drive mechanism 218, as described above with reference to FIG. 1.


Alternatively, the processing chamber 210 can be configured as described in pending U.S. patent application Ser. No. 09/912,844 (US Patent Application Publication No. 2002/0046707 A1), entitled “High Pressure Processing Chamber for Semiconductor Substrates”, and filed on Jul. 24, 2001, which is incorporated herein by reference in its entirety. For example, FIG. 3 depicts a cross-sectional view of a supercritical processing chamber 310 comprising upper chamber assembly 314, lower chamber assembly 315, platen 316 configured to support substrate 305, and drive mechanism 318 configured to raise and lower platen 316 between a substrate loading/unloading condition and a substrate processing condition. Drive mechanism 318 can further include a drive cylinder 320, drive piston 322 having piston neck 323, sealing plate 324, pneumatic cavity 326, and hydraulic cavity 328. Additionally, supercritical processing chamber 310 further includes a plurality of sealing devices 330, 332, and 334 for providing a sealed, high pressure process space 312 in the processing chamber 310.


As described above with reference to FIGS. 1, 2, and 3, the fluid flow or recirculation system coupled to the processing chamber is configured to circulate the fluid through the processing chamber, and thereby permit the exposure of the substrate in the processing chamber to a flow of fluid. The fluid, such as supercritical carbon dioxide with or without process chemistry, can enter the processing chamber at a peripheral edge of the substrate through one or more inlets coupled to the fluid flow system. For example, referring now to FIG. 3 and FIGS. 4A and 4B, an injection manifold 360 is shown as a ring having an annular fluid supply channel 362 coupled to one or more inlets 364. The one or more inlets 364, as illustrated, include forty five (45) injection orifices canted at 45 degrees, thereby imparting azimuthal momentum, or axial momentum, or both, as well as radial momentum to the flow of high pressure fluid through process space 312 above substrate 305. Although shown to be canted at an angle of 45 degrees, the angle may be varied, including direct radial inward injection.


Additionally, the fluid, such as supercritical carbon dioxide, exits the processing chamber adjacent a surface of the substrate through one or more outlets (not shown). For example, as described in U.S. patent application Ser. No. 09/912,844, the one or more outlets can include two outlet holes positioned proximate to and above the center of substrate 305. The flow through the two outlets can be alternated from one outlet to the next outlet using a shutter valve.


Referring now to FIG. 5, a method of treating a substrate with a fluid in a supercritical state is provided. As depicted in flow chart 500, the method begins in 510 with placing a substrate onto a platen within a high pressure processing chamber configured to expose the substrate to a supercritical fluid processing solution.


In 520, a supercritical fluid is formed by bringing a fluid to a subcritical state by adjusting the pressure of the fluid to at or above the critical pressure of the fluid, and adjusting the temperature of the fluid to at or above the critical temperature of the fluid. In 530, the temperature of the supercritical fluid is further elevated to a value equal to or greater than 80° C.


In 540, the supercritical fluid is introduced to the high pressure processing chamber and, in 550, the substrate is exposed to the supercritical fluid.


Additionally, as described above, a process chemistry can be added to the supercritical fluid during processing. The process chemistry can comprise a cleaning composition, a film forming composition, a healing composition, or a sealing composition, or any combination thereof. For example, the process chemistry can comprise a cleaning composition having a peroxide. In each of the following examples, the temperature of the supercritical fluid is elevated above approximately 80° C. and is, for example, 135° C. Furthermore, in each of the following examples, the pressure of the supercritical fluid is above the critical pressure and is, for instance, 2900 psi. In one example, the cleaning composition can comprise hydrogen peroxide combined with, for instance, a mixture of methanol (MeOH) and acetic acid (AcOH). By way of further example, a process recipe for removing post-etch residue(s) can comprise three steps including: (1) exposure of the substrate to supercritical carbon dioxide for approximately two minutes; (2) exposure of the substrate to 1 milliliter (ml) of 50% hydrogen peroxide (by volume) in water and 20 ml of 1:1 ratio MeOH:AcOH in supercritical carbon dioxide for approximately three minutes; and (3) exposure of the substrate to 13 ml of 12:1 ratio MeOH:H2O in supercritical carbon dioxide for approximately three minutes. The second step can be repeated any number of times, for instance, it may be repeated twice. Moreover, any step may be repeated. Additionally, the time duration for each step, or sub-step, may be varied greater than or less than those specified. Further yet, the amount of any additive may be varied greater than or less than those specified, and the ratios may be varied.


In another example, the cleaning composition can comprise a mixture of hydrogen peroxide and pyridine combined with, for instance, methanol (MeOH). By way of further example, a process recipe for removing post-etch residue(s) can comprise two steps including: (1) exposure of the substrate to 20 milliliters (ml) of MeOH and 13 ml of 10:3 ratio (by volume) of pyridine and 50% hydrogen peroxide (by volume) in water in supercritical carbon dioxide for approximately five minutes; and (2) exposure of the substrate to 10 ml of N-methyl pyrrolidone (NMP) in supercritical carbon dioxide for approximately two minutes. The first step can be repeated any number of times, for instance, it may be repeated once. Moreover, any step may be repeated. Additionally, the time duration for each step, or sub-step, may be varied greater than or less than those specified. Further yet, the amount of any additive may be varied greater than or less than those specified.


In another example, the cleaning composition can comprise 2-butanone peroxide combined with, for instance, a mixture of methanol (MeOH) and acetic acid. By way of further example, a process recipe for removing post-etch residue(s) can comprise three steps including: (1) exposure of the substrate to supercritical carbon dioxide for approximately two minutes; (2) exposure of the substrate to 4 milliliters (ml) of 2-butanone peroxide (such as Luperox DHD-9, which is 32% by volume of 2-butanone peroxide in 2,2,4-trimethyl-1,3-pentanediol diisobutyrate) and 12.5 ml of 1:1 ratio MeOH:AcOH in supercritical carbon dioxide for approximately three minutes; and (3) exposure of the substrate to 13 ml of 12:1 ratio MeOH:H2O in supercritical carbon dioxide for approximately three minutes. The second step can be repeated any number of times, for instance, it may be repeated twice. Moreover, any step may be repeated. Additionally, the time duration for each step, or sub-step, may be varied greater than or less than those specified. Further yet, the amount of any additive may be varied greater than or less than those specified, and the ratios may be varied.


In another example, the cleaning composition can comprise 2-butanone peroxide combined with, for instance, a mixture of methanol (MeOH) and acetic acid. By way of further example, a process recipe for removing post-etch residue(s) can comprise three steps including: (1) exposure of the substrate to supercritical carbon dioxide for approximately two minutes; (2) exposure of the substrate to 8 milliliters (ml) of 2-butanone peroxide (such as Luperox DHD-9, which is 32% by volume of 2-butanone peroxide in 2,2,4-trimethyl-1,3-pentanediol diisobutyrate) and 16 ml of 1:1 ratio MeOH:AcOH in supercritical carbon dioxide for approximately three minutes; and (3) exposure of the substrate to 13 ml of 12:1 ratio MeOH:H2O in supercritical carbon dioxide for approximately three minutes. The second step can be repeated any number of times, for instance, it may be repeated twice. Moreover, any step may be repeated. Additionally, the time duration for each step, or sub-step, may be varied greater than or less than those specified. Further yet, the amount of any additive may be varied greater than or less than those specified, and the ratios may be varied.


In another example, the cleaning composition can comprise peracetic acid combined with, for instance, a mixture of methanol (MeOH) and acetic acid. By way of further example, a process recipe for removing post-etch residue(s) can comprise three steps including: (1) exposure of the substrate to supercritical carbon dioxide for approximately two minutes; (2) exposure of the substrate to 4.5 milliliter (ml) of peracetic acid (32% by volume of peracetic acid in dilute acetic acid) and 16.5 ml of 1:1 ratio MeOH:AcOH in supercritical carbon dioxide for approximately three minutes; and (3) exposure of the substrate to 13 ml of 12:1 ratio MeOH:H2O in supercritical carbon dioxide for approximately three minutes. The second step can be repeated any number of times, for instance, it may be repeated twice. Moreover, any step may be repeated. Additionally, the time duration for each step, or sub-step, may be varied greater than or less than those specified. Further yet, the amount of any additive may be varied greater than or less than those specified, and the ratios may be varied.


In another example, the cleaning composition can comprise 2,4-pentanedione peroxide combined with, for instance, N-methyl pyrrolidone (NMP). By way of further example, a process recipe for removing post-etch residue(s) can comprise two steps including: (1) exposure of the substrate to supercritical carbon dioxide for approximately two minutes; and (2) exposure of the substrate to 3 milliliter (ml) of 2,4-pentanedione peroxide (for instance, 34% by volume in 4-hydroxy-4-methyl-2-pentanone and N-methyl pyrrolidone, or dimethyl phthalate and proprietary alcohols) and 20 ml of N-methyl pyrrolidone (NMP) in supercritical carbon dioxide for approximately three minutes. The second step can be repeated any number of times, for instance, it may be repeated twice. Moreover, any step may be repeated. Additionally, the time duration for each step, or sub-step, may be varied greater than or less than those specified. Further yet, the amount of any additive may be varied greater than or less than those specified, and the ratios may be varied.


Although only certain exemplary embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of this invention. Accordingly, all such modifications are intended to be included within the scope of this invention.

Claims
  • 1. A fluid flow system for circulating a supercritical fluid through a high pressure processing system comprising: a primary supercritical flow line coupled to said high pressure processing system, and configured to supply said supercritical fluid at a fluid temperature equal to or greater than 80° C. to said high pressure processing system;a high temperature pump having an inlet for receiving said supercritical fluid from said primary supercritical flow line and an outlet coupled to said primary supercritical flow line and configured to return said supercritical fluid to said primary supercritical flow line and thereby move said supercritical fluid through said primary supercritical flow line to said high pressure processing system, wherein said high temperature pump comprises a coolant inlet configured to receive a coolant and a coolant outlet configured to discharge said coolant; anda heat exchanger coupled to said coolant inlet, and configured to lower a coolant temperature of said coolant to a temperature less than or equal to said fluid temperature of said supercritical fluid.
  • 2. The fluid flow system of claim 1, wherein said primary supercritical flow line comprises a recirculation line having a first end coupled to an outlet of said high pressure processing system and a second end coupled to an inlet of said high pressure processing system with said high temperature pump coupled to said recirculation line therebetween.
  • 3. The fluid flow system of claim 2, wherein said recirculation line further comprises one or more fluid filters.
  • 4. The fluid flow system of claim 2, wherein said recirculation line further comprises a heating system configured to elevate said fluid temperature of said supercritical fluid.
  • 5. The fluid flow system of claim 1, wherein an inlet of said heat exchanger is coupled to said primary supercritical flow line on a pressure side of said high temperature pump, and said coolant outlet of said high temperature pump is coupled to said primary supercritical flow line on a suction side of said high temperature pump.
  • 6. The fluid flow system of claim 5, wherein a first valve is positioned between said coolant outlet and said primary supercritical flow line.
  • 7. The fluid flow system of claim 6, wherein a second valve is positioned between said coolant outlet and said primary supercritical flow line.
  • 8. The fluid flow line of claim 1, wherein said heat exchanger is coupled to a secondary flow line which is coupled to said coolant inlet, an inlet of said heat exchanger is coupled via said secondary flow line to a high pressure fluid source, and said coolant outlet of said high temperature pump is coupled via said secondary flow line to a discharge system.
  • 9. The fluid flow system of claim 8, wherein said secondary flow line comprises a coolant pump configured to flow said coolant through said heat exchanger and said high temperature pump.
  • 10. The fluid flow system of claim 8, wherein said discharge system is configured to return said coolant to said heat exchanger.
  • 11. A fluid flow system for circulating a supercritical fluid through a high pressure processing system comprising: a primary supercritical flow line having a first end coupled to an outlet of said high pressure processing system and a second end coupled to an inlet of said high pressure processing system, said primary supercritical flow line configured to supply said supercritical fluid at a fluid temperature equal to or greater than 80° C. to said high pressure processing system;a high temperature pump having an inlet coupled to a suction side and configured to receive said supercritical fluid and an outlet coupled to a pressure side and configured to discharge said supercritical fluid, wherein said suction side is disposed between said outlet of said high pressure processing system and said high temperature pump and said pressure side is disposed between said high temperature pump and said inlet of said high pressure processing system, wherein said high temperature pump is configured to move said supercritical fluid through said primary supercritical flow line to said high pressure processing system, wherein said high temperature pump further comprises a coolant inlet configured to receive a coolant and a coolant outlet configured to discharge said coolant, and wherein said coolant outlet is coupled to said primary supercritical flow line on said suction side thereof; anda heat exchanger having an inlet coupled to said primary supercritical flow line on said pressure side for diverting supercritical fluid into said heat exchanger as said coolant, and having an outlet coupled to said coolant inlet, said heat exchanger configured to lower a coolant temperature of said coolant to a temperature less than or equal to said fluid temperature of said supercritical fluid.
  • 12. The fluid flow system of claim 11, wherein said primary supercritical flow line further comprises a heating system configured to elevate said fluid temperature of said supercritical fluid.
  • 13. The fluid flow system of claim 11, wherein a first valve is positioned between said heat exchanger and said primary supercritical flow line.
  • 14. The fluid flow system of claim 13, wherein a second valve is positioned between said coolant outlet and said primary supercritical flow line.
US Referenced Citations (389)
Number Name Date Kind
2439689 Hyde Apr 1948 A
2617719 Stewart Nov 1952 A
2625886 Browne Jan 1953 A
3642020 Payne Feb 1972 A
3744660 Gaines et al. Jul 1973 A
3890176 Bolon Jun 1975 A
3900551 Bardoncelli et al. Aug 1975 A
3968885 Hassan et al. Jul 1976 A
4029517 Rand Jun 1977 A
4091643 Zucchini May 1978 A
4219333 Harris Aug 1980 A
4245154 Uehara et al. Jan 1981 A
4341592 Shortes et al. Jul 1982 A
4349415 DeFilippi et al. Sep 1982 A
4355937 Mack et al. Oct 1982 A
4367140 Wilson Jan 1983 A
4406596 Budde Sep 1983 A
4422651 Platts Dec 1983 A
4474199 Blaudszun Oct 1984 A
4475993 Blander et al. Oct 1984 A
4522788 Sitek et al. Jun 1985 A
4549467 Wilden et al. Oct 1985 A
4592306 Gallego Jun 1986 A
4601181 Privat Jul 1986 A
4626509 Lyman Dec 1986 A
4670126 Messer et al. Jun 1987 A
4682937 Credle, Jr. Jul 1987 A
4693777 Hazano et al. Sep 1987 A
4749440 Blackwood et al. Jun 1988 A
4778356 Hicks Oct 1988 A
4788043 Kagiyama et al. Nov 1988 A
4789077 Noe Dec 1988 A
4823976 White, III et al. Apr 1989 A
4825808 Takahashi et al. May 1989 A
4827867 Takei et al. May 1989 A
4838476 Rahn Jun 1989 A
4865061 Fowler et al. Sep 1989 A
4877530 Moses Oct 1989 A
4879004 Oesch et al. Nov 1989 A
4879431 Bertoncini Nov 1989 A
4917556 Stark et al. Apr 1990 A
4923828 Gluck et al. May 1990 A
4924892 Kiba et al. May 1990 A
4925790 Blanch et al. May 1990 A
4933404 Beckman et al. Jun 1990 A
4944837 Nishikawa et al. Jul 1990 A
4951601 Maydan et al. Aug 1990 A
4960140 Ishijima et al. Oct 1990 A
4983223 Gessner Jan 1991 A
5011542 Weil Apr 1991 A
5013366 Jackson et al. May 1991 A
5044871 Davis et al. Sep 1991 A
5062770 Story et al. Nov 1991 A
5068040 Jackson Nov 1991 A
5071485 Matthews et al. Dec 1991 A
5091207 Tanaka Feb 1992 A
5105556 Kurokawa et al. Apr 1992 A
5143103 Basso et al. Sep 1992 A
5158704 Fulton et al. Oct 1992 A
5167716 Boitnott et al. Dec 1992 A
5169296 Wilden Dec 1992 A
5169408 Biggerstaff et al. Dec 1992 A
5174917 Monzyk Dec 1992 A
5185058 Cathey, Jr. Feb 1993 A
5185296 Morita et al. Feb 1993 A
5186594 Toshima et al. Feb 1993 A
5186718 Tepman et al. Feb 1993 A
5188515 Horn Feb 1993 A
5190373 Dickson et al. Mar 1993 A
5191993 Wanger et al. Mar 1993 A
5193560 Tanaka et al. Mar 1993 A
5195878 Sahiavo et al. Mar 1993 A
5196134 Jackson Mar 1993 A
5201960 Starov Apr 1993 A
5213485 Wilden May 1993 A
5213619 Jackson et al. May 1993 A
5215592 Jackson Jun 1993 A
5217043 Novakovi Jun 1993 A
5221019 Pechacek et al. Jun 1993 A
5222876 Budde Jun 1993 A
5224504 Thompson et al. Jul 1993 A
5225173 Wai Jul 1993 A
5236602 Jackson Aug 1993 A
5236669 Simmons et al. Aug 1993 A
5237824 Pawliszyn Aug 1993 A
5238671 Matson et al. Aug 1993 A
5240390 Kvinge et al. Aug 1993 A
5243821 Schuck et al. Sep 1993 A
5246500 Samata et al. Sep 1993 A
5250078 Saus et al. Oct 1993 A
5251776 Morgan, Jr. et al. Oct 1993 A
5261965 Moslehi Nov 1993 A
5266205 Fulton et al. Nov 1993 A
5267455 Dewees et al. Dec 1993 A
5269815 Schlenker et al. Dec 1993 A
5269850 Jackson Dec 1993 A
5270948 Sato et al. Dec 1993 A
5274129 Natale et al. Dec 1993 A
5280693 Heudecker Jan 1994 A
5285352 Pastore et al. Feb 1994 A
5288333 Tanaka et al. Feb 1994 A
5290361 Hayashida et al. Mar 1994 A
5294261 McDermott et al. Mar 1994 A
5298032 Schlenker et al. Mar 1994 A
5304515 Morita et al. Apr 1994 A
5306350 Hoy et al. Apr 1994 A
5312882 DeSimone et al. May 1994 A
5313965 Palen May 1994 A
5314574 Takahashi May 1994 A
5316591 Chao et al. May 1994 A
5320742 Fletcher et al. Jun 1994 A
5328722 Ghanayem et al. Jul 1994 A
5334332 Lee Aug 1994 A
5334493 Fujita et al. Aug 1994 A
5337446 Smith et al. Aug 1994 A
5339844 Stanford, Jr. et al. Aug 1994 A
5352327 Witowski Oct 1994 A
5355901 Mielnik et al. Oct 1994 A
5356538 Wai et al. Oct 1994 A
5364497 Chau et al. Nov 1994 A
5368171 Jackson Nov 1994 A
5370740 Chao et al. Dec 1994 A
5370741 Bergman Dec 1994 A
5370742 Mitchell et al. Dec 1994 A
5377705 Smith, Jr. et al. Jan 1995 A
5401322 Marshall Mar 1995 A
5403621 Jackson et al. Apr 1995 A
5403665 Alley et al. Apr 1995 A
5404894 Shiraiwa Apr 1995 A
5412958 Iliff et al. May 1995 A
5417768 Smith, Jr. et al. May 1995 A
5433334 Reneau Jul 1995 A
5447294 Sakata et al. Sep 1995 A
5456759 Stanford, Jr. et al. Oct 1995 A
5470393 Fukazawa Nov 1995 A
5474812 Truckenmuller et al. Dec 1995 A
5482564 Douglas et al. Jan 1996 A
5486212 Mitchell et al. Jan 1996 A
5494526 Paranjpe Feb 1996 A
5500081 Bergman Mar 1996 A
5501761 Evans et al. Mar 1996 A
5503176 Dummire et al. Apr 1996 A
5505219 Lansberry et al. Apr 1996 A
5509431 Smith, Jr. et al. Apr 1996 A
5514220 Wetmore et al. May 1996 A
5522938 O'Brien Jun 1996 A
5526834 Mielnik et al. Jun 1996 A
5533538 Marshall Jul 1996 A
5547774 Gimzewski et al. Aug 1996 A
5550211 DeCrosta et al. Aug 1996 A
5571330 Kyogoku Nov 1996 A
5580846 Hayashida et al. Dec 1996 A
5589082 Lin et al. Dec 1996 A
5589105 DeSimone et al. Dec 1996 A
5589224 Tepman et al. Dec 1996 A
5618751 Golden et al. Apr 1997 A
5621982 Yamashita et al. Apr 1997 A
5629918 Ho et al. May 1997 A
5632847 Ohno et al. May 1997 A
5635463 Muraoka Jun 1997 A
5637151 Schulz Jun 1997 A
5641887 Beckman et al. Jun 1997 A
5644855 McDermott et al. Jul 1997 A
5649809 Stapelfeldt Jul 1997 A
5656097 Olesen et al. Aug 1997 A
5665527 Allen et al. Sep 1997 A
5669251 Townsend et al. Sep 1997 A
5672204 Habuka Sep 1997 A
5676705 Jureller et al. Oct 1997 A
5679169 Gonzales et al. Oct 1997 A
5679171 Saga et al. Oct 1997 A
5683473 Jureller et al. Nov 1997 A
5683977 Jureller et al. Nov 1997 A
5688879 DeSimone Nov 1997 A
5700379 Biebl Dec 1997 A
5702228 Tamai et al. Dec 1997 A
5706319 Holtz Jan 1998 A
5714299 Combes et al. Feb 1998 A
5725987 Combes et al. Mar 1998 A
5726211 Hedrick et al. Mar 1998 A
5730874 Wai et al. Mar 1998 A
5736425 Smith et al. Apr 1998 A
5739223 DeSimone Apr 1998 A
5746008 Yamashita et al. May 1998 A
5766367 Smith et al. Jun 1998 A
5769588 Toshima et al. Jun 1998 A
5783082 DeSimone et al. Jul 1998 A
5797719 James et al. Aug 1998 A
5798126 Fujikawa et al. Aug 1998 A
5798438 Sawan et al. Aug 1998 A
5804607 Hedrick et al. Sep 1998 A
5807607 Smith et al. Sep 1998 A
5817178 Mita et al. Oct 1998 A
5847443 Cho et al. Dec 1998 A
5866005 DeSimone et al. Feb 1999 A
5868856 Douglas et al. Feb 1999 A
5868862 Douglas et al. Feb 1999 A
5872061 Lee et al. Feb 1999 A
5872257 Beckman et al. Feb 1999 A
5873948 Kim Feb 1999 A
5881577 Sauer et al. Mar 1999 A
5882165 Maydan et al. Mar 1999 A
5888050 Fitzgerald et al. Mar 1999 A
5893756 Berman et al. Apr 1999 A
5896870 Huynh et al. Apr 1999 A
5898727 Fujikawa et al. Apr 1999 A
5900107 Murphy et al. May 1999 A
5900354 Batchelder May 1999 A
5904737 Preston et al. May 1999 A
5906866 Webb May 1999 A
5908510 McCullough et al. Jun 1999 A
5928389 Jevtic Jul 1999 A
5932100 Yager et al. Aug 1999 A
5934856 Asakawa et al. Aug 1999 A
5934991 Rush Aug 1999 A
5944996 DeSimone et al. Aug 1999 A
5955140 Smith et al. Sep 1999 A
5965025 Wai et al. Oct 1999 A
5975492 Brenes Nov 1999 A
5976264 McCullough et al. Nov 1999 A
5979306 Fujikawa et al. Nov 1999 A
5980648 Adler Nov 1999 A
5981399 Kawamura et al. Nov 1999 A
5989342 Ikede et al. Nov 1999 A
5992680 Smith Nov 1999 A
5994696 Tai et al. Nov 1999 A
6005226 Aschner et al. Dec 1999 A
6017820 Ting et al. Jan 2000 A
6021791 Dryer et al. Feb 2000 A
6024801 Wallace et al. Feb 2000 A
6029371 Kamikawa et al. Feb 2000 A
6035871 Eui-Yeol Mar 2000 A
6037277 Masakara et al. Mar 2000 A
6053348 Morch Apr 2000 A
6056008 Adams et al. May 2000 A
6063714 Smith et al. May 2000 A
6067728 Farmer et al. May 2000 A
6077053 Fujikawa et al. Jun 2000 A
6077321 Adachi et al. Jun 2000 A
6082150 Stucker Jul 2000 A
6085935 Malchow et al. Jul 2000 A
6097015 McCullough et al. Aug 2000 A
6099619 Lansbarkis et al. Aug 2000 A
6100198 Grieger et al. Aug 2000 A
6110232 Chen et al. Aug 2000 A
6114044 Houston et al. Sep 2000 A
6122566 Nguyen et al. Sep 2000 A
6128830 Bettcher et al. Oct 2000 A
6140252 Cho et al. Oct 2000 A
6145519 Konishi et al. Nov 2000 A
6149828 Vaartstra Nov 2000 A
6159295 Maskara et al. Dec 2000 A
6164297 Kamikawa Dec 2000 A
6171645 Smith et al. Jan 2001 B1
6186722 Shirai Feb 2001 B1
6200943 Romack et al. Mar 2001 B1
6203582 Berner et al. Mar 2001 B1
6216364 Tanaka et al. Apr 2001 B1
6224774 DeSimone et al. May 2001 B1
6228563 Starov et al. May 2001 B1
6228826 DeYoung et al. May 2001 B1
6232238 Chang et al. May 2001 B1
6232417 Rhodes et al. May 2001 B1
6235634 White et al. May 2001 B1
6239038 Wen May 2001 B1
6241825 Wytman Jun 2001 B1
6242165 Vaartstra Jun 2001 B1
6244121 Hunter Jun 2001 B1
6251250 Keigler Jun 2001 B1
6255732 Yokoyama et al. Jul 2001 B1
6270531 DeYoung et al. Aug 2001 B1
6277753 Mullee et al. Aug 2001 B1
6284558 Sakamoto Sep 2001 B1
6286231 Bergman et al. Sep 2001 B1
6305677 Lenz Oct 2001 B1
6306564 Mullee Oct 2001 B1
6319858 Lee et al. Nov 2001 B1
6331487 Koch Dec 2001 B2
6334266 Moritz et al. Jan 2002 B1
6344174 Miller et al. Feb 2002 B1
6344243 McClain et al. Feb 2002 B1
6355072 Racette et al. Mar 2002 B1
6358673 Namatsu Mar 2002 B1
6361696 Spiegelman et al. Mar 2002 B1
6367491 Marshall et al. Apr 2002 B1
6380105 Smith et al. Apr 2002 B1
6388317 Reese May 2002 B1
6389677 Lenz May 2002 B1
6418956 Bloom Jul 2002 B1
6425956 Cotte et al. Jul 2002 B1
6436824 Chooi et al. Aug 2002 B1
6451510 Messick et al. Sep 2002 B1
6454519 Toshima et al. Sep 2002 B1
6454945 Weigl et al. Sep 2002 B1
6458494 Song et al. Oct 2002 B2
6461967 Wu et al. Oct 2002 B2
6464790 Sherstinsky et al. Oct 2002 B1
6465403 Skee Oct 2002 B1
6472334 Ikakura et al. Oct 2002 B2
6478035 Niuya et al. Nov 2002 B1
6479407 Yokoyama et al. Nov 2002 B2
6485895 Choi et al. Nov 2002 B1
6486078 Rangarajan et al. Nov 2002 B1
6487792 Sutton et al. Dec 2002 B2
6487994 Ahern et al. Dec 2002 B2
6492090 Nishi et al. Dec 2002 B2
6500605 Mullee et al. Dec 2002 B1
6503837 Chiou Jan 2003 B2
6508259 Tseronis et al. Jan 2003 B1
6509136 Goldfarb et al. Jan 2003 B1
6509141 Mullee Jan 2003 B2
6520767 Ahern et al. Feb 2003 B1
6521466 Castrucci Feb 2003 B1
6537916 Mullee et al. Mar 2003 B2
6541278 Morita et al. Apr 2003 B2
6546946 Dunmire Apr 2003 B2
6550484 Gopinath et al. Apr 2003 B1
6554507 Namatsu Apr 2003 B2
6558475 Jur et al. May 2003 B1
6561213 Wang et al. May 2003 B2
6561220 McCullough et al. May 2003 B2
6561481 Filonczuk May 2003 B1
6561767 Berger et al. May 2003 B2
6561774 Layman May 2003 B2
6562146 DeYoung et al. May 2003 B1
6564826 Shen May 2003 B2
6576138 Sateria et al. Jun 2003 B2
6583067 Chang et al. Jun 2003 B2
6596093 DeYoung et al. Jul 2003 B2
6613157 DeYoung et al. Sep 2003 B2
6623355 McClain et al. Sep 2003 B2
6635565 Wu et al. Oct 2003 B2
6635582 Yun et al. Oct 2003 B2
6641678 DeYoung et al. Nov 2003 B2
6656666 Simons et al. Dec 2003 B2
6669916 Heim et al. Dec 2003 B2
6673521 Moreau et al. Jan 2004 B2
6677244 Ono et al. Jan 2004 B2
6685903 Wong et al. Feb 2004 B2
6715498 Humayun et al. Apr 2004 B1
6722642 Sutton et al. Apr 2004 B1
6736149 Biberger et al. May 2004 B2
6737725 Grill et al. May 2004 B2
6748960 Biberger et al. Jun 2004 B1
6764552 Joyce et al. Jul 2004 B1
6777312 Yang et al. Aug 2004 B2
6780765 Goldstein Aug 2004 B2
6800142 Tipton et al. Oct 2004 B1
6802961 Jackson Oct 2004 B2
6852194 Matsushita et al. Feb 2005 B2
6871512 Tsunoda Mar 2005 B2
6871656 Mullee Mar 2005 B2
6890853 Biberger et al. May 2005 B2
6921456 Biberger et al. Jul 2005 B2
6924086 Arena-Foster et al. Aug 2005 B1
6926012 Biberger et al. Aug 2005 B2
6926798 Biberger et al. Aug 2005 B2
6928746 Arena-Foster et al. Aug 2005 B2
6953654 Ryza et al. Oct 2005 B2
20020001929 Biberger et al. Jan 2002 A1
20020117391 Beam Aug 2002 A1
20030003762 Cotte et al. Jan 2003 A1
20030013311 Chang et al. Jan 2003 A1
20030036023 Moreau et al. Feb 2003 A1
20030047533 Reid et al. Mar 2003 A1
20030106573 Masuda et al. Jun 2003 A1
20030125225 Xu et al. Jul 2003 A1
20030196679 Cotte et al. Oct 2003 A1
20030198895 Toma et al. Oct 2003 A1
20030202792 Goshi Oct 2003 A1
20040011386 Seghal Jan 2004 A1
20040020518 DeYoung et al. Feb 2004 A1
20040045588 DeYoung et al. Mar 2004 A1
20040050406 Sehgal Mar 2004 A1
20040087457 Korzenski et al. May 2004 A1
20040103922 Inoue et al. Jun 2004 A1
20040112409 Schilling Jun 2004 A1
20040134515 Castrucci Jul 2004 A1
20040177867 Schilling Sep 2004 A1
20040259357 Saga Dec 2004 A1
20040261710 Matsushita et al. Dec 2004 A1
20050077597 Toma et al. Apr 2005 A1
20050158477 Vezin et al. Jul 2005 A1
20050203789 Kauffman et al. Sep 2005 A1
20050215072 Kevwitch et al. Sep 2005 A1
20050216228 Kauffman et al. Sep 2005 A1
20060003592 Gale et al. Jan 2006 A1
20060102590 Kevwitch et al. May 2006 A1
20060180573 Hansen et al. Aug 2006 A1
Foreign Referenced Citations (85)
Number Date Country
SE 251213 Aug 1948 CH
1399790 Feb 2003 CN
36 08 783 Sep 1987 DE
39 04 514 Mar 1990 DE
40 04 111 Aug 1990 DE
39 06 724 Sep 1990 DE
39 06 735 Sep 1990 DE
39 06 737 Sep 1990 DE
44 29 470 Mar 1995 DE
43 44 021 Jun 1995 DE
198 60 084 Jul 2000 DE
0 244 951 Nov 1987 EP
02 72 141 Jun 1988 EP
0 283 740 Sep 1988 EP
0 302 345 Feb 1989 EP
0 370 233 May 1990 EP
0 391 035 Oct 1990 EP
0 453 867 Oct 1991 EP
0 518 653 Dec 1992 EP
0 536 752 Apr 1993 EP
0 572 913 Dec 1993 EP
0 587 168 Mar 1994 EP
0 620 270 Oct 1994 EP
0 679 753 Nov 1995 EP
0 711 864 May 1996 EP
0 726 099 Aug 1996 EP
0 727 711 Aug 1996 EP
0 822 583 Feb 1998 EP
0 829 312 Mar 1998 EP
0 836 895 Apr 1998 EP
0 903 775 Mar 1999 EP
1 499 491 Sep 1967 FR
2 003 975 Mar 1979 GB
2 193 482 Feb 1988 GB
60-192333 Sep 1985 JP
60-2348479 Nov 1985 JP
60-246635 Dec 1985 JP
61-017151 Jan 1986 JP
61-231166 Oct 1986 JP
62-111442 May 1987 JP
62-125619 Jun 1987 JP
63-256326 Oct 1988 JP
63-303059 Dec 1988 JP
1-045131 Feb 1989 JP
1-246835 Oct 1989 JP
2-148841 Jun 1990 JP
2-209729 Aug 1990 JP
2-304941 Dec 1990 JP
4-284648 Oct 1992 JP
7-142333 Jun 1995 JP
8-186140 Jul 1996 JP
8-222508 Aug 1996 JP
10-144757 May 1998 JP
56-142629 Nov 1998 JP
10335408 Dec 1998 JP
11-200035 Jul 1999 JP
2000-106358 Apr 2000 JP
2003000120 Jan 2003 KR
WO 8707309 Dec 1987 WO
WO 9006189 Jun 1990 WO
WO 9013675 Nov 1990 WO
WO 9112629 Aug 1991 WO
WO 9314255 Jul 1993 WO
WO 9314259 Jul 1993 WO
WO 9320116 Oct 1993 WO
WO 9627704 Sep 1996 WO
WO 9918603 Apr 1999 WO
WO 9949998 Oct 1999 WO
WO 0036635 Jun 2000 WO
WO 0073241 Dec 2000 WO
WO 0110733 Feb 2001 WO
WO 0133613 May 2001 WO
WO 0133615 May 2001 WO
WO 0155628 Aug 2001 WO
WO 0168279 Sep 2001 WO
WO 0174538 Oct 2001 WO
WO 0178911 Oct 2001 WO
WO 0185391 Nov 2001 WO
WO 0194782 Dec 2001 WO
WO 0209894 Feb 2002 WO
WO 0211191 Feb 2002 WO
WO 0215251 Feb 2002 WO
WO 0216051 Feb 2002 WO
WO03064065 Aug 2003 WO
WO 03030219 Oct 2003 WO
Related Publications (1)
Number Date Country
20060104831 A1 May 2006 US