METHOD AND SYSTEM FOR DIAGNOSING OPEN-CIRCUIT FAULT OF POWER SWITCHING DEVICE OF THREE-PHASE THREE-LEVEL RECTIFIER

Abstract

A method and a system for diagnosing a fault of a three-phase three-level rectifier are relate to the technical field of fault diagnosis of power electronic equipment, and provided to implement identification and location of an open-circuit fault of a power switching device thereof. A deviation between an expected value and an actual value of a phase-to-phase voltage is adopted as a diagnosis variable. The diagnosis variable is calculated by adopting a screening technique, thereby reducing calculation error to ensure accuracy of diagnosis. Only existing voltage current signals in a control system of the rectifier are required to calculate the diagnosis variable, so no additional hardware is required and low-cost fault diagnosis can be implemented. Different voltage thresholds are adopted for different fault characteristic sections, and the voltage thresholds are updated in real time according to a direct current side voltage, which improves diagnosis speed while ensuring higher robustness.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of China application serial no. 202011245559.2, filed on Nov. 10, 2020. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.

BACKGROUND

Technical Field

The disclosure relates to the technical field of fault diagnosis of power electronic equipment, and more specifically relates to a method and a system for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier.

Description of Related Art

Compared with the traditional two-level converter, the three-level converter is widely applied to high-voltage high-power scenarios due to advantages such as higher efficiency and lower current harmonics. However, since the three-level converter has more power switching devices that work in the high-frequency switching state for a long time, the three-level converter is one of the most failure-prone component in the converter. For the open-circuit fault of the power switching device, fault-tolerant control may enable the converter system to maintain higher performance and continuous operation. The fault diagnosis is a necessary condition to implement fault-tolerant control. Since different fault-tolerant control strategies need to be adopted for different faulty switches, when the power switching device of the converter has an open-circuit fault, accurately and quickly identifying and locating the fault is an important measure to improve the reliability of the converter.

At present, the research on the open-circuit fault diagnosis of the power switching device of the three-level rectifier mainly focuses on the signal-based method, the model-based method, and the artificial intelligence-based method. The signal-based method performs simple calculation and analysis on measurable signals before and after the fault to implement fault location, and may be divided into the current method and the voltage method according to the type of signals. The current method includes the Parker's current vector angle method, the normalized average current method, and the current zero zone method. The principles of the methods are simple, but the diagnosis speed is slower, and the dependence on the load is strong. The diagnosis speed of the voltage method has been improved, but an additional sensor or measuring circuit is usually required to measure the voltage, and the cost of diagnosis is higher. The model-based method establishes a mathematical model to calculate signals and implements fault diagnosis through analyzing residuals between predicted signals and actual signals. Therefore, no additional hardware is required, and the diagnosis speed is faster, but the diagnosis speed and the robustness still need to be improved. The knowledge-based method mainly adopts theories such as the wavelet transform, the neural network, and the support vector machine to perform signal processing and fault classification on voltage and current signals in the circuit to implement the accurate location of the faulty switching device. Such method generally has intensive calculation and slower diagnosis speed.

Therefore, it is of great significance to research on the method for diagnosing the open-circuit fault of the power switching device of the three-phase three-level rectifier to improve the speed, the applicability, the robustness, etc. of the diagnosis method.

SUMMARY

In view of the above defects or improvement requirements of the prior art, the disclosure proposes a method and a system for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier, which can implement quick, low-cost, high-robustness identification and location the open-circuit faults of all power switching devices in the three-level rectifier.

In order to achieve the above objective, according to one aspect of the disclosure, the method for diagnosing the open-circuit fault of the power switching device of the three-phase three-level rectifier is provided, which includes the following steps.

(1) An expected value V_XY*(k) of a phase-to-phase voltage between an X-phase and a Y-phase of a rectifier k at a current time and an actual value V_XY(k) of the phase-to-phase voltage are selected. A deviation ΔV_XY(k) between the two is used as a diagnosis variable, where XY=AB,BC,CA.

(2) Voltage current information required for diagnosis is obtained from a control system of the rectifier. The diagnosis variable ΔV_XY(k) is calculated by adopting a screening technique.

(3) According to fault characteristics of faulty switches at different times, fault sections are classified. A diagnosis threshold TH_XY(k) at the current time is updated for a current fault section.

(4) Whether the diagnosis variable exceeds a threshold range and a polarity thereof are judged according to the diagnosis variable ΔV_XY(k) and the diagnosis threshold TH_XY(k).

(5) A fault of an internal switching transistor is identified and located according to the above judgment result.

(6) A diagnosis result of the fault is checked to verify whether the diagnosis result is correct, and the diagnosis result of a fault of an external switching transistor that may be misdiagnosed as the fault of the internal switching transistor is corrected to implement identification and location of an external switching fault.

In some alternative embodiments, the expected value V_XY*(k) of the phase-to-phase voltage is obtained from V_XY*(k)=½V_DC(k)(S_X(k)−S_Y(k)), and the actual value V_XY(k) of the phase-to-phase voltage is obtained from

$V_{XY}\left(k\right)=\left(E_X\left(k\right)-E_Y\left(k\right)\right)-R\left(I_X\left(k\right)-I_Y\left(k\right)\right)-\frac{L}{T}\left[\left(I_X\left(k\right)-I_X\left(k-1\right)\right)-\left(I_Y\left(k\right)-I_Y\left(k-1\right)\right)\right],$

where V_DC(k) is a direct current side voltage of the rectifier at the current time; S_X(k) and S_Y(k) are respectively switching control signals of the X-phase and the Y-phase of the rectifier, S_X(k)=1 represents that switches S_X1 and S_X2 are turned on and switches S_X3 and S_X4 are turned off, S_X(k)=0 represents that the switches S_X2 and S_X3 are turned on and the switches S_X1 and S_X4 are turned off, and S_X(k)=1 represents that the switches S_X3 and S_X4 are turned on and the switches S_X1 and S_X2 are turned off; E_X(k) and E_Y(k) are respectively alternating current side voltages of the X-phase and the Y-phase of the rectifier; I_X(k) and I_Y(k) are respectively alternating current side currents of the X-phase and the Y-phase of the rectifier; R is an alternating current side equivalent resistance of the rectifier; L is an alternating current side inductance of the rectifier; T is a sampling interval time, k represents a sampling point at the current time, and k−1 represents a sampling point at a previous time.

In some alternative embodiments, Step (2) includes the following.

If there is no switching of three-phase switching control signals between sampling points k and k−1, that is, when S_A(k)=S_A(k−1), S_B(k)=S_B(k−1), and S_C(k)=S_C(k−1) are satisfied, ΔV_XY(k)=V_XY*(k) V_XY(k); and if one of S_A(k)=S_A(k−1), S_B(k)=S_B(k−1), and S_C(k)=S_C(k−1) is not satisfied, ΔV_XY(k) is not calculated, and ΔV_XY(k) at the current time is regarded as zero.

In some alternative embodiments, Step (3) includes the following.

For the fault diagnosis of the internal switching transistor, the fault sections are divided into a current zero zone and a current non-zero zone. Different thresholds are set for different sections:

$T{H}_{XY}\left(k\right)=\{\begin{array}{c}\frac{V_{DC}\left(k\right)}{4}-V,I_{XY}\left(k\right)=0\\ \frac{V_{DC}\left(k\right)}{2}-V,I_{XY}\left(k\right)=1\end{array},$

where V is a preset value, which is a relatively small constant; I_XY(k)=0 represents that I_X or I_Y is in the current zero zone, I_XY(k)=1 represents that I_X and I_Y are both in the current non-zero zone, and V_DC(k) is a direct current side voltage of the rectifier at the current time.

For the definition of the current zero zone and the current non-zero zone, considering noise and fluctuations of current, the following definition is provided: I_XY(k)=

$\{\begin{array}{cc}0,& I_X\left(k\right)\le I_{TH}\mathrm{or}I_Y\left(k\right)\le I_{TH}\\ 1,& I_X\left(k\right)>I_{TH}\mathrm{and}I_Y\left(k\right)>I_{TH}\end{array},$

where I_TH is a current threshold.

In some alternative embodiments, Step (4) includes the following.

A variable F_XY(k) indicating whether the diagnosis variable exceeds a threshold range [−TH_XY(k),TH_XY(k)] and the polarity thereof is obtained from F_XY(k)=

$\{\begin{array}{cc}1,& \Delta V_{XY}\left(k\right)>T{H}_{XY}\left(k\right)\\ 0,& \Delta V_{XY}\left(k\right)\le {\mathrm{TH}}_{XY}\left(k\right)\\ -1,& \Delta V_{XY}\left(k\right)<-T{H}_{XY}\left(k\right)\end{array}.$

In some alternative embodiments, Step (5) includes the following.

A corresponding relationship between the fault of the internal switching transistor and the variable F_XY(k) is as follows.

When S_A2 is faulty, F_AB=1, F_BC=0, F_CA=−1;

When S_A3 is faulty, F_AB=−1, F_BC=0, F_CA=1;

When S_B2 is faulty, F_AB=−1, F_BC=1, F_CA=0;

When S_B3 is faulty, F_AB=1, F_BC=−1, F_CA=0;

When S_C2 is faulty, F_AB=0, F_BC=−1, F_CA=1;

When S_C3 is faulty, F_AB=0, F_BC=1, F_CA=−1.

In some alternative embodiments, Step (6) includes the following.

During a preset current cycle after completing the fault diagnosis, if at least one value of three diagnosis variables ΔV_AB(k), ΔV_BC(k), and ΔV_CA(k) is greater than a threshold TH(k) at a certain time, the diagnosis result is correct and is represented by F_check=1. Conversely, during the preset current cycle after completing the fault diagnosis, if values of all sampling points of ΔV_AB(k), ΔV_BC(k), and ΔV_{C A}(k) all do not exceed the threshold T H (0, the diagnosis result is wrong and is represented by F_check=0, where the threshold TH(k) is set to V_DC(k)/2+V.

In some optional implementations, when F_check=⁰, a corresponding relationship between the diagnosis result, F_check, and the checking result is as follows.

$S_{A2}\mathrm{fault}\{\begin{array}{c}1,\mathrm{correct},S_{A2}\mathrm{fault}\\ 0,\mathrm{wrong},S_{A1}\mathrm{fault}\end{array};S_{A3}\mathrm{fault}\{\begin{array}{c}1,\mathrm{correct},S_{A3}\mathrm{fault}\\ 0,\mathrm{wrong},S_{A4}\mathrm{fault}\end{array};S_{B2}\mathrm{fault}\{\begin{array}{c}1,\mathrm{correct},S_{B2}\mathrm{fault}\\ 0,\mathrm{wrong},S_{B1}\mathrm{fault}\end{array};S_{B3}\mathrm{fault}\{\begin{array}{c}1,\mathrm{correct},S_{B3}\mathrm{fault}\\ 0,\mathrm{wrong},S_{B4}\mathrm{fault}\end{array};S_{C2}\mathrm{fault}\{\begin{array}{c}1,\mathrm{correct},S_{C2}\mathrm{fault}\\ 0,\mathrm{wrong},S_{C1}\mathrm{fault}\end{array};S_{C3}\mathrm{fault}\{\begin{array}{c}1,\mathrm{correct},S_{C3}\mathrm{fault}\\ 0,\mathrm{wrong},S_{C4}\mathrm{fault}\end{array}.$

According to another aspect of the disclosure, a system for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier is provided, which includes the following.

A diagnosis variable determination module is configured to select an expected value V_XY*(k) of a phase-to-phase voltage between an X-phase and a Y-phase of a rectifier k at a current time and an actual value V_XY(k) of the phase-to-phase voltage, and use a deviation ΔV_XY(k) between the two is as a diagnosis variable, where XY=AB,BC,CA.

A diagnosis variable calculation module is configured to obtain voltage current information required for diagnosis from a control system of the rectifier, and calculate the diagnosis variable ΔV_XY(k) by adopting a screening technique.

A diagnosis threshold determination module is configured to classify fault sections according to fault characteristics of faulty switches at different times, and update a diagnosis threshold TH_XY(k) at the current time for a current fault section.

A polarity determination module is configured to judge whether the diagnosis variable exceeds a threshold range and a polarity thereof according to the diagnosis variable ΔV_XY(k) and the diagnosis threshold TH_XY(k).

A diagnosis module is configured to identify and locate a fault of an internal switching transistor according to the above judgment result.

A correction module is configured to check a diagnosis result of the fault to verify whether the diagnosis result is correct, and correct the diagnosis result of a fault of an external switching transistor that may be misdiagnosed as the fault of the internal switching transistor to implement identification and location of an external switching fault.

According to another aspect of the disclosure, a computer-readable storage medium stored with a computer program is provided. When the computer program is executed by a processor, the steps of the method are implemented.

Generally speaking, compared with the prior art, the above technical solutions conceived by the disclosure can achieve the following beneficial effects.

(1) Through Step (6), the disclosure adopts a diagnosis result checking method to implement quick identification and location of the open-circuit faults of all power switching devices in the three-phase three-level rectifier.

(2) Through Step (2), the disclosure adopts a screening calculation method to calculate the deviation of the phase-to-phase voltage, which reduces the calculation error and improves the accuracy of diagnosis.

(3) The disclosure only needs the existing voltage current signals in the control system of the rectifier, so no additional hardware is required and low-cost fault diagnosis can be implemented.

(4) Through Step (3), the disclosure adopts a sectioned real-time update of the threshold, which not only improves the diagnosis speed, but also ensures higher robustness.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a topological structure diagram of a three-phase three-level rectifier and a flowchart of a method for diagnosing an open-circuit fault of a power switching device thereof according to an embodiment of the disclosure.

FIG. 2 is a diagram of a diagnosis result of an open-circuit fault of an internal switching transistor of a three-phase three-level rectifier according to an embodiment of the disclosure.

FIG. 3 is a diagram of a diagnosis result of an open-circuit fault of an external switching transistor of a three-phase three-level rectifier according to an embodiment of the disclosure.

DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS

In order for the objectives, technical solutions, and advantages of the disclosure to be clearer, the following further describes the disclosure in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the disclosure, but not to limit the disclosure. In addition, the technical features involved in the various embodiments of the disclosure described below may be combined with each other as long as there is no conflict therebetween.

FIG. 1 shows a method for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier according to an embodiment of the disclosure, which includes the following steps.

In Step S1, information required for diagnosis is obtained from a control system of a rectifier.

Alternating current side three-phase voltages (E_A(k), E_B(k), E_C(k)), three-phase currents (I_A(k), I_B(k), I_C(k)), and a direct current side voltage (V_DC(k)) obtained by the three-phase three-level rectifier through sampling are sent to the control system. According to information such as the above signals and the stored alternating current side inductance (L) and equivalent resistance (R), the control system obtains control signals (S_A(k), S_B(k), S_C(k)) of each phase power switching device through calculation and sends the same to the rectifier, so that the rectifier runs according to a control target. Therefore, the control system has all the information required for diagnosis. The information is used to calculate a diagnosis variable and update a threshold.

For an X-phase of the rectifier, X=A, B, C, four power switching transistors thereof are classified into two outer switching transistors S_X1 and S_X4 and two inner switching transistors S_X2 and S_X3. Therefore, the rectifier consists of six outer switching transistors and six inner switching transistors in total.

In Step S2, a deviation of a phase-to-phase voltage is calculated.

Taking an AB phase-to-phase voltage as an example, an expected value V_AB*(k) of the AB phase-to-phase voltage is:

V _AB*(k)=½V_DC(k)(S_A(k)−S_B(k)),

where k represents a k-th sampling.

An actual value V_AB(k) of the AB phase-to-phase voltage is:

$V_{AB}\left(k\right)=\left(E_A\left(k\right)-E_B\left(k\right)\right)-R\left(I_A\left(k\right)-I_B\left(k\right)\right)-\frac{L}{T}\left[\left(I_A\left(k\right)-I_A\left(k-1\right)\right)-\left(I_B\left(k\right)-I_B\left(k-1\right)\right)\right]$

where T is a sampling interval time.

For a deviation ΔV_AB(k) of the AB phase-to-phase voltage, when conditions S_A(k)=S_A(k−1), S_B(k)=S_B(k−1), and S_C(k)=S_C(k−1) are satisfied, ΔV_AB(k)=V_AB*(k)−V_AB(k); and when one of the conditions S_A(k)=S_A(k−1), S_B(k)=S_B(k−1), and S_C(k)=S_C(k−1) is not satisfied, ΔV_AB(k)=0.

By analogy, a deviation ΔV_BC(k) of a BC phase-to-phase voltage and a deviation ΔV_CA(k) of a CA phase-to-phase voltage are calculated.

In Step S3, fault sections are determined and the threshold is updated in real time.

In Step S3, fault characteristics of different faulty switches at different times are analyzed. If errors are not considered, when the rectifier is working normally, three diagnosis variables ΔV_AB(k), ΔV_BC(k), and ΔV_CA(k) are all zero; and when an open-circuit fault of a switch occurs, the diagnosis variables have different values according to different faulty switches, currents, and switching control signals, as shown in Table 1 below.

TABLE 1
Current	Faulty switch	SX	ΔVXY	ΔVYZ	ΔVZX
ix < 0	Sx1	1	VDC/2	0	−VDC/2
ix > 0	Sx2	1	VDC	0	−VDC
		0	VDC/2	0	−VDC/2
	Sx3	0	−VDC/2	0	VDC/2
		−1	−VDC	0	VDC
	Sx4	−1	−VDC/2	0	VDC/2
ix = 0	Sx2	1	[0, VDC]	0	[−VDC, 0]
		0	[0, VDC/2]	0	[−VDC/2 0]
	Sx3	0	[−VDC/2, 0]	0	[0, VDC/2]
		−1	[−VDC, 0]	0	[0, VDC]

For the fault diagnosis of the internal switching transistor, the specific method for determining the threshold is as follows.

Taking the AB phase as an example, a current zero zone and a current non-zero zone are determined.

$I_{AB}\left(k\right)=\{\begin{array}{cc}0,& I_A\left(k\right)\le I_{TH}\mathrm{or}I_B\left(k\right)\le I_{TH}\\ 1,& I_A\left(k\right)>I_{TH}\mathrm{and}I_B\left(k\right)>I_{TH}\end{array}$

where I_AB(k)=0 represents I_A or I_B is in the current zero zone, I_AB(k)=1 represents that I_A or I_B are both in the current non-zero zone, I_TH is a current threshold, and a current amplitude may be 5%.

By analogy, current zero zones and current non-zero zones of the BC phase and the CA phase are determined.

Taking the AB phase as an example, a main threshold is updated.

$T{H}_{AB}\left(k\right)=\{\begin{array}{cc}\frac{V_{DC}\left(k\right)}{4}-V,& I_{AB}\left(k\right)=0\\ \frac{V_{DC}\left(k\right)}{2}-V,& I_{AB}\left(k\right)=1\end{array}$

where V is a relatively small constant, which may be 2% times of V_DC.

By analogy, main thresholds of the BC phase and the CA phase are updated.

The threshold required for diagnosis result checking is updated.

$\mathrm{TH}\left(k\right)=\frac{V_{DC}\left(k\right)}{2}+V$

In Step S4, whether the diagnosis variable exceeds a main threshold range and a polarity thereof is judged.

Taking the AB phase as an example, a variable F_AB(k) indicating whether ΔV_AB(k) exceeds a range [−TH_AB(k),TH_AB(k)] and the polarity thereof is:

$F_{AB}\left(k\right)=\{\begin{array}{cc}1,& \Delta V_{AB}\left(k\right)>T{H}_{AB}\left(k\right)\\ 0,& \Delta V_{AB}\left(k\right)\le {\mathrm{TH}}_{AB}\left(k\right)\\ -1,& \Delta V_{AB}\left(k\right)<-T{H}_{AB}\left(k\right)\end{array}$

By analogy, indicating variables F_BC(k) and F_CA(k) of the BC phase and the CA phase are determined.

In Step S5, the fault of the internal switching transistor is identified and located.

After obtaining F_AB(k), F_BC(k), and F_CA(k), the fault of the internal switching transistor may be located according to Table 2.

TABLE 2
Fault diagnosis of internal switching transistor
	Faulty switch	FAB	FBC	FCA
	SA2	1	0	−1
	SA3	−1	0	1
	SB2	−1	1	0
	SB3	1	−1	0
	SC2	0	−1	1
	SC3	0	1	−1

In Step S6, the diagnosis result is checked (a fault of an external switching transistor is identified and located).

After obtaining the diagnosis result of Step S5, whether ΔV_AB(k), ΔV_BC(k), and ΔV_CA(k) are greater than the threshold TH(k) is judged. During ⅛ of a current cycle, if a value of at least one sampling point of any of the variables ΔV_AB(k), ΔV_BC(k), and ΔV_CA(k) is greater than the threshold TH(k), the diagnosis result is correct and is represented by F_check=1. Conversely, during ⅛ of the current cycle, if values of all sampling points of ΔV_AB(k), ΔV_BC(k), and ΔV_CA(k) do not exceed the threshold TH(k), the diagnosis result is wrong and is represented by F_check=0. When F_check=0, the diagnosis result is corrected to a fault of a corresponding external switching transistor, as shown in Table 3. Taking the diagnosis result of Step S5 being S_A2 open-circuit fault as an example, if F_check=1, it represents that the diagnosis result is correct and it is S_A2 open-circuit fault; and if F_check=0, it represents that the diagnosis result is wrong and is corrected to S_A1 open-circuit fault.

TABLE 3
Correction of diagnosis result (fault diagnosis of
external switching transistor)
	Diagnosis result	Fcheck	Checking result
	SA2 fault	1	Correct, SA2 fault
		0	Wrong, SA1 fault
	SA3 fault	1	Correct, SA3 fault
		0	Wrong, SA4 fault
	SB2 fault	1	Correct, SB2 fault
		0	Wrong, SB1 fault
	SB3 fault	1	Correct, SB3 fault
		0	Wrong, SB4 fault
	SC2 fault	1	Correct, SC2 fault
		0	Wrong, SC1 fault
	SC3 fault	1	Correct, SC3 fault
		0	Wrong, SC4 fault

In order to describe the example more clearly, FIG. 2 and FIG. 3 provide the diagnosis result of the example, and the parameters used are shown in Table 4.

TABLE 4
Parameters used in example
	Alternating current side voltages EA, EB, EC	110 V(rms), 50 Hz
	Sampling interval T	25	μs
	Switching frequency f	5	kHz
	Alternating current side inductance L	5	mH
	Direct current side given voltage V	400	V
	Direct current side resistance RL	200	Ω

As shown in FIG. 2, the open-circuit fault of the switch S_A2 occurs at 1.03 s. After the fault, ΔV_AB(k) rapidly increases to ΔV_AB(k)>TH_AB(k), so that F_AB(k)=1; ΔV_CA(k) rapidly decreases to ΔV_CA(k)<−TH_CA(k), so that F_CA(k)=−1; and ΔV_BC(k) is always within the threshold range, F_BC(k)=0. Therefore, according to Table 2, the switch S_A2 is diagnosed as the open-circuit fault, and the diagnosis time is about 0.3 ms. Also, during ⅛ of the current cycle after identifying S_A2 open-circuit fault, that is F_check=1, the diagnosis may be verified as correct according to Table 3.

As shown in FIG. 3, the open-circuit fault of the switch S_A1 occurs at 1.03 s. After the fault, ΔV_AB(k) rapidly increases to ΔV_AB(k)>TH_AB(k), so that F_AB(k)=1; ΔV_CA(k) rapidly decreases to ΔV_CA(k)<−TH_CA(k), so that F_CA(k)=−1; and ΔV_BC(k) is always within the threshold range, F_BC(k)=0. Therefore, according to Table 2, the switch S_A2 is diagnosed as the open-circuit fault. However, during ⅛ of the current cycle after identifying S_A2 open-circuit fault, ΔV_AB(k), ΔV_BC(k), and ΔV_CA(k) are all within the threshold range [−TH(k),TH(k)], so F_check=0. According to Table 3, the diagnosis result is corrected to S_A1 open-circuit fault, and the diagnosis time is about 3 ms.

The above results prove that the disclosure can implement the open-circuit fault diagnosis of all power switching devices of the three-phase three-level rectifier and ensure the speed and the accuracy of the fault diagnosis of the internal switching transistor that has a greater impact on the system, and the overall diagnosis speed is faster.

The disclosure also provides a system for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier, which includes the following.

A diagnosis variable determination module is configured to select an expected value V_XY*(k) of a phase-to-phase voltage between an X-phase and a Y-phase of a rectifier k at the current time and an actual value V_XY(k) of the phase-to-phase voltage, and use a deviation ΔV_XY(k) between the two is as a diagnosis variable, where XY=AB,BC,CA.

A diagnosis variable calculation module is configured to obtain voltage current information required for diagnosis from a control system of the rectifier, and calculate the diagnosis variable ΔV_XY(k) by adopting a screening technique.

A diagnosis threshold determination module is configured to classify fault sections according to fault characteristics of faulty switches at different times, and update a diagnosis threshold TH_XY(k) at the current time for a current fault section.

A polarity determination module is configured to judge whether the diagnosis variable exceeds a threshold range and a polarity thereof according to the diagnosis variable ΔV_XY(k) and the diagnosis threshold TH_XY(k).

A diagnosis module is configured to identify and locate a fault of an internal switching transistor according to the above judgment result.

A correction module is configured to check a diagnosis result of the fault to verify whether the diagnosis result is correct, and correct the diagnosis result of a fault of an external switching transistor that may be misdiagnosed as the fault of the internal switching transistor to implement identification and location of an external switching fault.

For the specific implementation of each module, reference may be made to the description of the foregoing embodiment of the method, which will not be repeated in the embodiment of the disclosure.

The disclosure also provides a computer-readable storage medium stored with a computer program. When the program is executed by a processor, the method for diagnosing the open-circuit fault of the power switching device of the three-phase three-level rectifier in the embodiment of the method is implemented.

It should be noted that according to implementation requirements, each step/component described in the disclosure may be split into more steps/components or two or more steps/components or partial operation of a step/component may be combined into a new step/component to implement the objective of the disclosure.

Persons skilled in the art may easily understand that the above are only preferred embodiments of the disclosure and are not intended to limit the disclosure. Any modification, equivalent replacement, improvement, etc., made within the spirit and principle of the disclosure should be included in the protection scope of the disclosure.

Claims

1. A method for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier, comprising: Step (1) of selecting an expected value of a phase-to-phase voltage between an X-phase and a Y-phase of the rectifier at a current time and an actual value of the phase-to-phase voltage, and using a deviation between the two as a diagnosis variable;Step (2) of obtaining voltage current information required for diagnosis from a control system of the rectifier, and calculating the diagnosis variable by adopting a screening technique;Step (3) of classifying fault sections according to fault characteristics of faulty switches at different times, and updating a diagnosis threshold at the current time for a current fault section;Step (4) of judging whether the diagnosis variable exceeds a threshold range and a polarity thereof according to the diagnosis variable and the diagnosis threshold;Step (5) of identifying and locating a fault of an internal switching transistor according to the judgment result; andStep (6) of checking a diagnosis result of the fault to verify whether the diagnosis result is correct, and correcting the diagnosis result of a fault of an external switching transistor that is misdiagnosed as the fault of the internal switching transistor to implement identification and location of an external switching fault.

2. The method according to claim 1, comprising: obtaining the expected value VXY*(k) of the phase-to-phase voltage from VXY*(k)=½VDC(k)(SX(k)−SY(k)), and obtaining the actual value VXY(k) of the phase-to-phase voltage

3. The method according to claim 2, wherein Step (2) comprises: ΔVXY(k)=VXY*(k)−VXY(k) when there is no switching of three-phase switching control signals between the sampling points k and k−1, that is, when SA(k)=SA(k−1), SB(k)=SB(k−1), and SC(k)=SC(k−1) are satisfied; and not calculating ΔVXY(k), and regarding ΔVXY(k) at the current time as zero when one of SA(k)=SA(k−1), SB(k)=SB(k−1), and SC(k)=SC(k−1) is not satisfied, where ΔVXY(k) represents the deviation between the expected value of the phase-to-phase voltage between the X-phase and the Y-phase and the actual value of the phase-to-phase voltage.

4. The method according to claim 1, wherein Step (3) comprises: dividing the fault sections into a current zero zone and a current non-zero zone, and setting different diagnosis thresholds THXY(k) for different sections:

5. The method according to claim 4, wherein Step (4) comprises: obtaining a variable FXY(k) indicating whether the diagnosis variable exceeds a threshold range [−THXY(k),THXY(k)] and the polarity thereof from

6. The method according to claim 5, wherein Step (5) comprises: a corresponding relationship between the fault of the internal switching transistor and the variable FXY(k) being:when SA2 is faulty, FAB=1, FBC=0, FCA=−1;when SA3 is faulty, FAB=−1, FBC=0, FCA=1;when SB2 is faulty, FAB=−1, FBC=1, FCA=0;when SB3 is faulty, FAB=1, FBC=−1, FCA=0;when SC2 is faulty, FAB=0, FBC=−1, FCA=1; andwhen SC3 is faulty, FAB=0, FBC=1, FCA=−−1.

7. The method according to claim 6, wherein Step (6) comprises: the diagnosis result being correct and being represented by Fcheck=1 when at least one value of three diagnosis variables ΔVAB(k), ΔVBC(k), and ΔVCA(k) is greater than a threshold TH(k) at a certain time during a preset current cycle after completing the fault diagnosis; and conversely, the diagnosis result being wrong and being represented by Fcheck=0 when values of all sampling points of ΔVAB(k), ΔVBC(k), and ΔVCA(k) all do not exceed the threshold TH(k) during the preset current cycle after completing the fault diagnosis, where the threshold TH(k) is set to VDC(k)/2+V.

8. The method according to claim 7, wherein when Fcheck=0, a corresponding relationship between the diagnosis result, Fcheck, and a checking result is:

9. A system for diagnosing an open-circuit fault of a power switching device of a three-phase three-level rectifier, comprising: a diagnosis variable determination module, configured to select an expected value of a phase-to-phase voltage between an X-phase and a Y-phase of the rectifier at a current time and an actual value of the phase-to-phase voltage, and use a deviation between the two is as a diagnosis variable;a diagnosis variable calculation module, configured to obtain voltage current information required for diagnosis from a control system of the rectifier, and calculate the diagnosis variable by adopting a screening technique;a diagnosis threshold determination module, configured to classify fault sections according to fault characteristics of faulty switches at different times, and update a diagnosis threshold at the current time for a current fault section;a polarity determination module, configured to judge whether the diagnosis variable exceeds a threshold range and a polarity thereof according to the diagnosis variable and the diagnosis threshold;a diagnosis module, configured to identify and locate a fault of an internal switching transistor according to the judgment result;a correction module, configured to check a diagnosis result of the fault to verify whether the diagnosis result is correct, and correct the diagnosis result of a fault of an external switching transistor that is misdiagnosed as the fault of the internal switching transistor to implement identification and location of an external switching fault.

10. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 1 are implemented.

11. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 2 are implemented.

12. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 3 are implemented.

13. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 4 are implemented.

14. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 5 are implemented.

15. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 6 are implemented.

16. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 7 are implemented.

17. A computer-readable storage medium stored with a computer program, wherein when the computer program is executed by a processor, steps of the method according to claim 8 are implemented.