Although the conventional transducer 10 functions, there are drawbacks. The trend in magnetic recording is to higher density memories. A lower track width, TW is desired for reading higher density memories. As track width decreases, the widths of other layers, such as the AFM layer 22, are also reduced. Although the AFM layer 22 can have a reduced width, the size of the crystallographic grains within the AFM layer 22 are desired not to scale with width. This is because smaller grain sizes correspond to a lower blocking temperature for the AFM layer 22. Scaling the grains of the AFM layer 22 would result in an AFM layer 22 that is more disordered at operating temperatures, which is undesirable. However, larger grains for the AFM layer 22 adversely affect the ability of the AFM layer to pin of the magnetic moment of the pinned layer 12 in the preferred orientation. For example, the grains for an IrMn AFM layer 22 are typically on the order of seven to ten nanometers in diameter. An AFM layer 22 that is twenty-five nanometers by thirty nanometers has a significantly reduced number of grains (e.g. on the order of 12) versus an AFM layer 22 that is fifty nanometers by sixty nanometers (e.g. on the order of forty-eight). The quality of the magnetic bias provided by the AFM layer 22 is related to the number of grains in the AFM layer 22. As a result, the ability of the AFM layer 22 to pin the magnetic moment of the pinned layer 24 in the desired direction is compromised at higher densities. Poorer pinning of the magnetic moment of the pinned layer 24 adversely affects performance of the conventional magnetic transducer 10.
In addition, a reduced shield-to-shield spacing, SS1, is desired for higher density memories. For example, for a shield-to-shield spacing for the conventional read transducer 10 of approximately twenty-two nanometers, approximately one-third is occupied by the AFM layer 22. The thickness of the AFM layer 22 may be reduced slightly. However, such reductions in the thickness of the AFM layer 22 adversely affect the thermal stability of the magnetoresistive sensor 20. Such instabilities in the magnetoresistive sensor 20 are undesirable.
Accordingly, what is needed is a system and method for improving the performance of a magnetic recording read transducer.
A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic read transducer includes a read sensor stack and a pinning structure. The read sensor stack includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and between the pinned layer and the free layer. A portion of the read sensor stack is at the ABS. The pinning structure includes a hard magnetic layer recessed from the ABS, recessed from the free layer and adjacent to a portion of the pinned layer.
The transducer 100 includes optional soft magnetic shields 102 and 108, optional insulator 104, optional hard biasing layers 106, a read sensor 110 and at least one pinning structure 120. The sensor 110 includes a pinned layer 112, a nonmagnetic spacer layer 114, and a free layer 116. The pinned layer 112 and free layer 116 are ferromagnetic. However, the magnetization of the pinned layer 112 is stable, while that of the free layer 116 may respond to an external magnetic field. The free layer 116 may, however, be magnetically biased by the hard bias layers 106. The hard bias layers 106 may, for example, ensure that the free layer 116 is single domain. The pinned layer 112 is shown as a single layer. However, in some embodiments, the pinned layer 112 may be a multilayer including but not limited to a SAF structure. The free layer 116 is shown as a single layer, but may be a multilayer including but not limited to a SAF structure. In the embodiment shown, the pinned layer 112 is an extended pinned layer having a stripe height SH2 that is greater than that of the free layer, SH1. The nonmagnetic spacer layer 114 may be a conductor, an insulator such as a tunneling barrier layer, or other similar structure. In some embodiments, therefore, the sensor 110 is a GMR or TMR sensor. However, there is no AFM layer at the ABS. In other embodiments, such an AFM layer may be included at the ABS. In addition, the pinned layer 112 is an extended pinned layer. Stated differently, the pinned layer 112 extends further from the ABS in the stripe height direction than the free layer 116 (as is shown in
The pinning structure 120 is used to magnetically bias the pinned layer 112 via an exchange interaction. The pinning structure 120 includes at least one hard magnetic layer (not shown) that is recessed from the free layer 116 by a distance d. The hard magnetic layer may include materials such as Co and/or Fe. The hard magnetic layer may be a single constituent layer, an alloy, a multilayer, or some other structure. In some embodiments, the pinning structure 120 is recessed from the free layer 116 by at least fifty Angstroms. In some embodiments, the pinning structure 120 may be recessed from the free layer 116 by not more than one micron. The pinning structure 120 may also include a soft magnetic layer and a nonmagnetic layer between the soft magnetic layer and the hard magnetic layer. In some embodiments, the hard magnetic layer adjoins (i.e. shares an interface with) the pinned layer 112. In other embodiments, there may be a layer between the pinned layer 112 and the hard magnetic layer. For example, the pinning structure 120 may include a nonmagnetic layer between the hard magnetic layer and the pinned layer 114. As used herein, a nonmagnetic layer in the pinning structure 120 is one which, when in the bulk and free from external magnetic fields is nonmagnetic. However, when adjoining a ferromagnetic layer such as the hard magnetic layer, the nonmagnetic layer may be magnetized. For example, the nonmagnetic layer may include Ru.
The pinning structure 120 is adjacent to the pinned layer 112. The pinning structure 120 is shown on the pinned layer 112. However, in another embodiment, the pinned layer 112 may be on the pinning structure 120. The pinning structure 120 may have the same width in the track width direction (TW) as the free layer 116 and pinned layer 112. In some embodiments, the pinning structure 120 is wider than the free layer 116 in the track width direction. In some such embodiments, the pinned layer 112 is also wider than the free layer in the track width direction at least where the pinned layer 112 is adjacent to the pinning structure 120.
The pinning structure 120 is used to stabilize the pinned layer 112. More specifically, the hard magnetic layer of the pinning structure 120 magnetically biases, or pins, the magnetization of the pinned layer 112 in the desired direction. In some embodiments, the pinning structure 120 pins the magnetic moment of the pinned layer 112 in a direction perpendicular to the ABS (i.e. the stripe height direction). This pinning may be assisted by the shape anisotropy of the pinned layer 112.
Using the pinning structure 120, the magnetic moment of the pinned layer 112 can be stabilized in the desired direction. This may be achieved with a reduced track width of the read sensor 110 and a lower shield-to-shield spacing, SS. The reduction in the shield-to-shield spacing may be achieved at least in part because the AFM layer 22 may be omitted at the ABS. Thus, a read transducer 100 suitable for use at higher magnetic recording densities may be provided.
In the embodiment shown, the pinning structure 120′ consists of a hard magnetic layer 122. The hard magnetic layer 122 has a high anisotropy. For example, the hard magnetic layer may have a magnetic anisotropy of at least 6×105 ergs/cc. The hard magnetic layer 122 may include materials such as Co and/or Fe. For example, disordered CoCrPt and CoFe alloys, ordered FePt and CoPt alloys, Heusler compounds, and rare earth-transition metal compounds having a high magnetic anisotropy might be used for the hard magnetic layer 122. Other materials may also be used in addition to or in lieu of the above materials. Further, if hard bias structures such as the hard bias structures 106 of
The pinning structure 120′ is used to stabilize the pinned layer 112′. More specifically, the hard magnetic layer 122 of the pinning structure 120′ magnetically biases, or pins, the magnetization of the pinned layer 112′ in the desired direction. In the embodiment shown, the hard magnetic layer 122 pins the magnetic moment of the pinned layer 112′ in the stripe height direction. Because the hard magnetic layer 122 adjoins the pinned layer 112′, their magnetic moments are in the same direction. In the embodiment shown, the pinned layer 112′ is an extended pinned layer having a stripe height SH2′ that is greater than that of the free layer, SH1′. Thus, the pinning structure 120′ resides on a portion of the pinned layer 112′ recessed from the free layer 116′. Note that if the pinned layer 112′ is a SAF, then the ferromagnetic layer adjoining the hard magnetic layer 122 would have its magnetic moment parallel to the magnetic moment of the hard magnetic layer 122 while the other ferromagnetic layer would have its magnetic moment antiparallel to the magnetic moment of the hard magnetic layer 122. This pinning of the magnetic moment of the pinned layer 112′ may be assisted by the shape anisotropy of the pinned layer 112′.
The pinning structure 120′ shares the benefits of the pinning structure 120. Using the pinning structure 120′, the magnetic moment of the pinned layer 112′ can be stabilized in the desired direction with a reduced track width of the read sensor 110′ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer 122. For example, because the hard magnetic layer 122 is recessed from the ABS, ferromagnetic materials that would corrode if at the ABS may be used for the pinning structure 120′ without corrosion issues. Thus, a read transducer 100′ suitable for use at higher magnetic recording densities may be provided.
In the embodiment shown, the pinning structure 120″ includes not only a hard magnetic layer 122′, but also a nonmagnetic layer 124 and a soft magnetic layer 126. The hard magnetic layer 122″ corresponds to the hard magnetic layer 122/122′. Thus, the hard magnetic layer 122′ may have analogous properties, structure, shape, composition and location as the hard magnetic layer 122. The hard magnetic layer 122′ also adjoins the pinned layer 112′. The nonmagnetic layer 124 may include materials such as Ru and separates the hard magnetic layer 122′ from the soft magnetic layer 126. The soft magnetic layer 126 may include materials such as Fe, Co, and Ni. The soft magnetic layer 126 also has a low coercivity. For example, the coercivity of the soft magnetic layer 126 may be less than or equal to one hundred Oe. In addition, the soft magnetic layer 126 is magnetically coupled with the hard magnetic layer 122′. In some embodiments, the layers 122′, 124 and 126 may be considered to form a SAF.
The hard magnetic layer 122′ of the pinning structure 120″ is used to stabilize the pinned layer 112″ by pinning the magnetic moment of the pinned layer 112″ in the desired direction. In the embodiment shown, the hard magnetic layer 122′ pins the magnetic moment of the pinned layer 112″ in the stripe height direction. Note that if the pinned layer 112′ is a SAF, then the ferromagnetic layer adjoining the hard magnetic layer 122 would have its magnetic moment parallel to the magnetic moment of the hard magnetic layer 122 while the other ferromagnetic layer would have its magnetic moment antiparallel to the magnetic moment of the hard magnetic layer 122. This pinning of the pinned layer magnetic moment may be assisted by the shape anisotropy of the pinned layer 112. The soft magnetic layer 126 and nonmagnetic layer 124 may be used to provide flux closure for the pinning structure 120″. Thus fringing fields from the pinning structure 120″ may be reduced or eliminated.
The pinning structure 120″ shares the benefits of the pinning structures 120 and 120′. Using the pinning structure 120″, the magnetic moment of the pinned layer 112″ can be stabilized in the desired direction with a reduced track width of the read sensor 110′ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer 122′ because the hard magnetic layer 122′ is recessed from the ABS. In addition, the presence of the nonmagnetic layer 124 and soft magnetic layer 126 allow for reduced fringing fields from the pinning structure 120″. Thus, a read transducer 100″ suitable for use at higher magnetic recording densities may be provided.
In the embodiment shown, the pinning structure 120″″ includes a hard magnetic layer 122′″ and a nonmagnetic layer 128′. The hard magnetic layer 122′″ corresponds to the hard magnetic layer 122/122′/122″. Thus, the hard magnetic layer 122′″ may have analogous properties, structure, shape, composition and location as the hard magnetic layers 122/122′/122″. The nonmagnetic layer 128 is between the hard magnetic layer 122″ and the pinned layer 112′″. The nonmagnetic layer 128 includes materials such as Ru, which allow an indirect exchange interaction between the pinned layer 128 and the hard magnetic layer 122′″.
The pinning structure 120′″ is used to stabilize the pinned layer 112′″. More specifically, the hard magnetic layer 122″ of the pinning structure 120′″ pins the magnetization of the pinned layer 112′″ in the desired direction. In the embodiment shown, the hard magnetic layer 122″ pins the magnetic moment of the pinned layer 112′″ in the stripe height direction. This pinning may be assisted by the shape anisotropy of the pinned layer 112′″. Because of the presence of the nonmagnetic layer 128, the magnetic moments of the pinned layer 112′″ and the hard magnetic layer 122″ are in opposite directions. Note that if the pinned layer 112′″ is a SAF, then the ferromagnetic layer closest to the hard magnetic layer 122″ would have its magnetic moment antiparallel to the magnetic moment of the hard magnetic layer 122″ while the other ferromagnetic layer would have its magnetic moment parallel to the magnetic moment of the hard magnetic layer 122″.
The pinning structure 120′″ shares the benefits of the pinning structure 120/120′/120″. Using the pinning structure 120′″, the magnetic moment of the pinned layer 112′″ can be stabilized in the desired direction with a reduced track width of the read sensor 110′ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer 122″. For example, because the hard magnetic layer 122″ is recessed from the ABS, ferromagnetic materials that would corrode if at the ABS may be used for the pinning structure 120′″ without corrosion issues. Thus, a read transducer 100′″ suitable for use at higher magnetic recording densities may be provided.
In the embodiment shown, the pinning structure 120″″ includes not only a hard magnetic layer 122′″, and a nonmagnetic layer 128′, but also a nonmagnetic layer 124′ and a soft magnetic layer 126′. The hard magnetic layer 122′″ corresponds to the hard magnetic layer 122. Thus, the hard magnetic layer 122′ may have analogous properties, structure, shape, composition and location as the hard magnetic layer 122/122′/122″. The nonmagnetic layer 128′ corresponds to the nonmagnetic layer 128. The nonmagnetic layer 128′ is thus between the hard magnetic layer 122′″ and the pinned layer 112″″. The soft magnetic layer 126′ and nonmagnetic layer 124′ correspond to the soft magnetic layer 126 and the nonmagnetic layer 124, respectively. Thus, the layers 124′, 126′, and 128′ may have analogous properties, structure, shape, composition and location as the layers 124, 126, and 128, respectively. The soft magnetic layer 126′ is thus magnetically coupled with the hard magnetic layer 122″ to form a SAF.
The hard magnetic layer 122′″ pins the magnetic moment of the pinned layer 112″″ in the desired direction. In the embodiment shown, the hard magnetic layer 122′″ pins the magnetic moment of the pinned layer 112″″ in the stripe height direction. This pinning may be assisted by the shape anisotropy of the pinned layer 112″. Because of the presence of the nonmagnetic layer 128′, the magnetic moments of the pinned layer 112″″ and the hard magnetic layer 122′″ are in opposite directions. Note that if the pinned layer 112″″ is a SAF, then the ferromagnetic layer closest to the hard magnetic layer 122′″ would have its magnetic moment antiparallel to the magnetic moment of the hard magnetic layer 122′″ while the other ferromagnetic layer would have its magnetic moment parallel to the magnetic moment of the hard magnetic layer 122′″. The soft magnetic layer 126′ and nonmagnetic layer 124′ may be used to provide flux closure for the pinning structure 120″″. Thus fringing fields from the pinning structure 120″ may be reduced or eliminated.
The pinning structure 120″″ shares the benefits of the pinning structures 120, 120′, 120″ and 120′″. Using the pinning structure 120″″, the magnetic moment of the pinned layer 112″″ can be stabilized in the desired direction with a reduced track width of the read sensor 110′ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer 122′″ because the hard magnetic layer 122′″ is recessed from the ABS. In addition, the presence of the nonmagnetic layer 124′ and soft magnetic layer 126′ allow for reduced fringing fields from the pinning structure 120″″. Thus, a read transducer 100′″ suitable for use at higher magnetic recording densities may be provided.
The pinning structure 170 is shown as residing below the pinned layer 162. Thus, in the embodiment shown, the pinned layer 162 may be fabricated on the pinning structure 170. The pinned layer 162 is thus an extended pinned layer, having a length, S2, in the stripe height direction that is greater than the stripe height of the free layer 166, S1. The geometry and function of the pinning structure 170 may be analogous to that of the pinning structures 120, 120′, 120″, 120′″, and 120″″. Thus, the pinning structure 170 includes at least a hard magnetic layer. In some embodiments, the pinning structure 170 may include a nonmagnetic layer between the hard magnetic layer and the pinned layer 162. In some embodiments, the pinning structure 170 may include a soft magnetic layer and a nonmagnetic layer between the hard magnetic layer and the soft magnetic layer. In other embodiments, the pinning structure may include some combination of the above embodiments. The hard magnetic layer (not explicitly shown in
The pinning structure 170 shares the benefits of the pinning structures 120, 120′, 120″ 120′″, and 120″″. Using the pinning structure 170, the magnetic moment of the pinned layer 162 can be stabilized in the desired direction with a reduced track width of the read sensor 160 and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer of the pinning structure 170 because the hard magnetic layer is recessed from the ABS. In addition, if layers such as the nonmagnetic layer 124/124′ and soft magnetic layer 126/126′ are used, reduced fringing fields from the pinning structure 170 may be achieved. Thus, a read transducer 150 suitable for use at higher magnetic recording densities may be provided.
The pinning structure 170′ is shown as residing below the pinned layer 162′. Thus, in the embodiment shown, the pinned layer 162′ may be fabricated on the pinning structure 170′. The pinned layer 162′ is thus an extended pinned layer, having a length, S2′, in the stripe height direction that is greater than the stripe height of the free layer 166′, S1′. The geometry and function of the pinning structure 170′ may be analogous to that of the pinning structures 120, 120′, 120″, 120′″, 120″″, and 170. Thus, the pinning structure 170′ includes at least a hard magnetic layer. In some embodiments, the pinning structure 170′ may include a nonmagnetic layer between the hard magnetic layer and the pinned layer 162′. In some embodiments, the pinning structure 170′ may include a soft magnetic layer and a nonmagnetic layer between the hard magnetic layer and the soft magnetic layer. In other embodiments, the pinning structure 170′ may include some combination of the above embodiments. The hard magnetic layer (not explicitly shown in
In addition, the pinned layer 162′ is explicitly shown as a SAF structure. Thus, the pinned layer 162′ includes ferromagnetic layers 161 and 165 separated by a nonmagnetic layer 163. The ferromagnetic layer 161 has its magnetic moment pinned by the hard magnetic layer in the pinning structure 170′. In the embodiment shown, the ferromagnetic layer 165 has a reduced stripe height, S3. Thus, in some embodiments, the ferromagnetic layer 165 closer to the free layer 166′ may have a length in the stripe height direction of at least S1′ and not more than S2′.
The pinning structure 170′ shares the benefits of the pinning structures 120, 120′, 120″ 120′″, 120″″, and 170. Using the pinning structure 170′, the magnetic moment of the pinned layer 162′ can be stabilized in the desired direction with a reduced track width of the read sensor 160′ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer of the pinning structure 170′ because the hard magnetic layer is recessed from the ABS. In addition, if layers such as the nonmagnetic layer 124/124′ and soft magnetic layer 126/126′ are used, reduced fringing fields from the pinning structure 170′ may be achieved. Thus, a read transducer 150′ suitable for use at higher magnetic recording densities may be provided.
The pinning structure 170″ is shown as residing above pinned layer 162″, as is shown in
In addition, the pinned layer 162″ is explicitly shown as a SAF structure. Thus, the pinned layer 162″ includes ferromagnetic layers 161′ and 165′ separated by a nonmagnetic layer 163′. The ferromagnetic layer 165′ (closest to the free layer 165′) has its magnetic moment pinned by the hard magnetic layer in the pinning structure 170″. Thus, the ferromagnetic layer 165′ has a stripe height that is greater than S1″ and is sufficient to provide for at least a fifty Angstrom distance between the free layer 166′ and the pinning structure 170″. In the embodiment shown, the ferromagnetic layer 165′ has a stripe height, S2″ that is the same as the ferromagnetic layer 161′. However, in some embodiments, the ferromagnetic layer 165′ may have a length in the stripe height direction that is less than S2′.
The pinning structure 170″ shares the benefits of the pinning structures 120, 120′, 120″ 120′″, 120″″, 170 and 170′. Using the pinning structure 170″, the magnetic moment of the pinned layer 162″ can be stabilized in the desired direction with a reduced track width of the read sensor 160″ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer of the pinning structure 170″ because the hard magnetic layer is recessed from the ABS. In addition, if layers such as the nonmagnetic layer 124/124′ and soft magnetic layer 126/126′ are used, reduced fringing fields from the pinning structure 170″ may be achieved. Thus, a read transducer 150″ suitable for use at higher magnetic recording densities may be provided.
The pinning structure 220 shares the benefits of the pinning structures 120, 120′, 120″ 120′″, 120″″, 170, 170′, and/or 170″. Using the pinning structure 220, the magnetic moment of the pinned layer 212 can be stabilized in the desired direction with a reduced track width of the read sensor 210 and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer of the pinning structure 220 because the hard magnetic layer is recessed from the ABS. In addition, if layers such as the nonmagnetic layer 124/124′ and soft magnetic layer 126/126′ are used, reduced fringing fields from the pinning structure 220 may be achieved. Thus, a read transducer 200 suitable for use at higher magnetic recording densities may be provided.
The pinning structure 220′ shares the benefits of the pinning structures 120, 120′, 120″ 120′″, 120″″, 170, 170′, 170″ and/or 220. Using the pinning structure 220, the magnetic moment of the pinned layer 212′ can be stabilized in the desired direction with a reduced track width of the read sensor 210′ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer of the pinning structure 220′ because the hard magnetic layer is recessed from the ABS. In addition, if layers such as the nonmagnetic layer 124/124′ and soft magnetic layer 126/126′ are used, reduced fringing fields from the pinning structure 220′ may be achieved. Thus, a read transducer 200′ suitable for use at higher magnetic recording densities may be provided.
The pinning structure 220″ shares the benefits of the pinning structures 120, 120′, 120″ 120′″, 120″″, 170, 170′, 170″, 220 and/or 220′. Using the pinning structure 220″, the magnetic moment of the pinned layer 212″ can be stabilized in the desired direction with a reduced track width of the read sensor 210″ and a lower shield-to-shield spacing. A wider range of materials may also be used for the hard magnetic layer of the pinning structure 220″ because the hard magnetic layer is recessed from the ABS. In addition, if layers such as the nonmagnetic layer 124/124′ and soft magnetic layer 126/126′ are used, reduced fringing fields from the pinning structure 220′ may be achieved. Thus, a read transducer 200″ suitable for use at higher magnetic recording densities may be provided.
It is noted that a single pinning structure 120, 120′, 120″ 120′″, 120″″, 170, 170′, 170″, 220, 220′ and/or 220″ is shown in
The shield 102 is optionally provided, via step 302. Step 302 typically includes depositing a large high permeability layer. The shield 102 typically extends significantly further in the track width direction than the read sensor 110 or any bias structures 106.
The read sensor 110 is provided, via step 304. Step 304 typically includes depositing the layers for the sensor 110. Step 304 may include blanket depositing the layers for the read sensor, as well as the defining the read sensor from the layers in at least the track width direction in step 304. In some embodiments, the read sensor 110 is defined using an ion mill. In some embodiments, the sensor 110 is also defined in the stripe height direction. In some embodiments, at least some of the layers for the sensor are not completely milled through to provide extended layers. For example, at least part of the pinned layer 112 may not be milled through in the stripe height direction or may be milled at a different distance from the ABS. Thus, an extended pinned layer may be provided. Similarly, the pinned layer 112 may be configured to be larger in the track width direction distal from the ABS, for example in a manner analogous to the pinned layers 212′ and/or 212″.
The pinning structure 120 that is recessed from the ABS may be provided, via step 306. In some embodiments, step 304 is performed after step 306. In such embodiments, the films for the read sensor deposited after the pinning structure 120 is provided. In such embodiments, the pinned layer 112 may be deposited on and reside on the pinning structure 120. In other embodiments, step 304 is performed before step 306. In such embodiments, the pinning structure 120 is on the pinned layer 112.
The bias structures 106 may optionally be provided in step 308. Step 308 may include depositing hard bias or other analogous structures. The top shield 108 may optionally then be provided, via step 310. Formation of the transducer 100 may then be completed.
Using the method 300, the transducers 100, 100′, 100″, 100′″, 100″″, 150, 150′, 150″, 200, 200′, and/or 200″ may be fabricated. Thus, the benefits of one or more of the transducers 100, 100′, 100″, 100′″, 100″″, 150, 150′, 150″, 200, 200′, and/or 200″ may be achieved.
A nonmagnetic layer is optionally provided adjoining the pinned layer, via step 322. In some embodiments, step 322 includes depositing a Ru layer. However, in other embodiments, other material(s) may be used. Thus, the layer 128/128′ may be formed.
The hard magnetic layer 122/122′/122″/122′″/122″″ layer is provided, via step 324. In some embodiments, step 324 depositing the hard magnetic layer adjoining the pinned layer 112. However, in other embodiments, for example in which the step 322 has been performed, the hard magnetic layer does not adjoin the pinned layer 112.
The nonmagnetic layer 124/124′ is optionally provided, via step 326. In some embodiments, step 326 includes sputtering or otherwise depositing the materials. The soft magnetic layer 126/126′ may also optionally be provided, via step 328. Thus, the pinning structure 120, 120′, 120″, 120′″, 120″″, 170, 170′, 170″, 220, 220′ and/or 220″.
Using the method 320, the pinning structures of the transducers 100, 100′, 100″, 100′″, 100″″, 150, 150′, 150″, 200, 200′, and/or 200″ may be fabricated. In particular, the pinning structure 120, 120′, 120″, 120′″, 120″″, 170, 170′, and/or 170″ may be provided. Thus, the benefits of one or more of the transducers 100, 100′, 100″, 100′″, 100″″, 150, 150′, 150″, 200, 200′, and/or 200″ may be achieved.
This application is a divisional of U.S. patent application Ser. No. 13/538,660, filed on Jun. 29, 2012, which is hereby incorporated by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
5612098 | Tan et al. | Mar 1997 | A |
5717550 | Nepela et al. | Feb 1998 | A |
5828530 | Gill et al. | Oct 1998 | A |
5876848 | Tan et al. | Mar 1999 | A |
5898547 | Fontana, Jr. et al. | Apr 1999 | A |
5936810 | Nakamoto et al. | Aug 1999 | A |
6016290 | Chen et al. | Jan 2000 | A |
6018441 | Wu et al. | Jan 2000 | A |
6025978 | Hoshi et al. | Feb 2000 | A |
6025988 | Yan | Feb 2000 | A |
6032353 | Hiner et al. | Mar 2000 | A |
6033532 | Minami | Mar 2000 | A |
6034851 | Zarouri et al. | Mar 2000 | A |
6043959 | Crue et al. | Mar 2000 | A |
6046885 | Aimonetti et al. | Apr 2000 | A |
6049650 | Jerman et al. | Apr 2000 | A |
6055138 | Shi | Apr 2000 | A |
6058094 | Davis et al. | May 2000 | A |
6073338 | Liu et al. | Jun 2000 | A |
6078479 | Nepela et al. | Jun 2000 | A |
6081499 | Berger et al. | Jun 2000 | A |
6094803 | Carlson et al. | Aug 2000 | A |
6099362 | Viches et al. | Aug 2000 | A |
6103073 | Thayamballi | Aug 2000 | A |
6108166 | Lederman | Aug 2000 | A |
6118629 | Huai et al. | Sep 2000 | A |
6118638 | Knapp et al. | Sep 2000 | A |
6125018 | Takagishi et al. | Sep 2000 | A |
6130779 | Carlson et al. | Oct 2000 | A |
6134089 | Barr et al. | Oct 2000 | A |
6136166 | Shen et al. | Oct 2000 | A |
6137661 | Shi et al. | Oct 2000 | A |
6137662 | Huai et al. | Oct 2000 | A |
6160684 | Heist et al. | Dec 2000 | A |
6163426 | Nepela et al. | Dec 2000 | A |
6166891 | Lederman et al. | Dec 2000 | A |
6173486 | Hsiao et al. | Jan 2001 | B1 |
6175476 | Huai et al. | Jan 2001 | B1 |
6178066 | Barr | Jan 2001 | B1 |
6178070 | Hong et al. | Jan 2001 | B1 |
6178150 | Davis | Jan 2001 | B1 |
6181485 | He | Jan 2001 | B1 |
6181525 | Carlson | Jan 2001 | B1 |
6185051 | Chen et al. | Feb 2001 | B1 |
6185077 | Tong et al. | Feb 2001 | B1 |
6185081 | Simion et al. | Feb 2001 | B1 |
6188549 | Wiitala | Feb 2001 | B1 |
6190764 | Shi et al. | Feb 2001 | B1 |
6193584 | Rudy et al. | Feb 2001 | B1 |
6195229 | Shen et al. | Feb 2001 | B1 |
6198608 | Hong et al. | Mar 2001 | B1 |
6198609 | Barr et al. | Mar 2001 | B1 |
6201673 | Rottmayer et al. | Mar 2001 | B1 |
6204998 | Katz | Mar 2001 | B1 |
6204999 | Crue et al. | Mar 2001 | B1 |
6212153 | Chen et al. | Apr 2001 | B1 |
6215625 | Carlson | Apr 2001 | B1 |
6219205 | Yuan et al. | Apr 2001 | B1 |
6221218 | Shi et al. | Apr 2001 | B1 |
6222707 | Huai et al. | Apr 2001 | B1 |
6229782 | Wang et al. | May 2001 | B1 |
6230959 | Heist et al. | May 2001 | B1 |
6233116 | Chen et al. | May 2001 | B1 |
6233125 | Knapp et al. | May 2001 | B1 |
6237215 | Hunsaker et al. | May 2001 | B1 |
6252743 | Bozorgi | Jun 2001 | B1 |
6255721 | Roberts | Jul 2001 | B1 |
6258468 | Mahvan et al. | Jul 2001 | B1 |
6266216 | Hikami et al. | Jul 2001 | B1 |
6271604 | Frank, Jr. et al. | Aug 2001 | B1 |
6275354 | Huai et al. | Aug 2001 | B1 |
6277505 | Shi et al. | Aug 2001 | B1 |
6282056 | Feng et al. | Aug 2001 | B1 |
6296955 | Hossain et al. | Oct 2001 | B1 |
6297955 | Frank, Jr. et al. | Oct 2001 | B1 |
6304414 | Crue, Jr. et al. | Oct 2001 | B1 |
6307715 | Berding et al. | Oct 2001 | B1 |
6310746 | Hawwa et al. | Oct 2001 | B1 |
6310750 | Hawwa et al. | Oct 2001 | B1 |
6317290 | Wang et al. | Nov 2001 | B1 |
6317297 | Tong et al. | Nov 2001 | B1 |
6322911 | Fukagawa et al. | Nov 2001 | B1 |
6330136 | Wang et al. | Dec 2001 | B1 |
6330137 | Knapp et al. | Dec 2001 | B1 |
6333830 | Rose et al. | Dec 2001 | B2 |
6340533 | Ueno et al. | Jan 2002 | B1 |
6349014 | Crue, Jr. et al. | Feb 2002 | B1 |
6351355 | Min et al. | Feb 2002 | B1 |
6353318 | Sin et al. | Mar 2002 | B1 |
6353511 | Shi et al. | Mar 2002 | B1 |
6356412 | Levi et al. | Mar 2002 | B1 |
6359779 | Frank, Jr. et al. | Mar 2002 | B1 |
6369983 | Hong | Apr 2002 | B1 |
6376964 | Young et al. | Apr 2002 | B1 |
6377535 | Chen et al. | Apr 2002 | B1 |
6381095 | Sin et al. | Apr 2002 | B1 |
6381105 | Huai et al. | Apr 2002 | B1 |
6389499 | Frank, Jr. et al. | May 2002 | B1 |
6392850 | Tong et al. | May 2002 | B1 |
6396660 | Jensen et al. | May 2002 | B1 |
6399179 | Hanrahan et al. | Jun 2002 | B1 |
6400526 | Crue, Jr. et al. | Jun 2002 | B2 |
6404600 | Hawwa et al. | Jun 2002 | B1 |
6404601 | Rottmayer et al. | Jun 2002 | B1 |
6404706 | Stovall et al. | Jun 2002 | B1 |
6410170 | Chen et al. | Jun 2002 | B1 |
6411522 | Frank, Jr. et al. | Jun 2002 | B1 |
6417998 | Crue, Jr. et al. | Jul 2002 | B1 |
6417999 | Knapp et al. | Jul 2002 | B1 |
6418000 | Gibbons et al. | Jul 2002 | B1 |
6418048 | Sin et al. | Jul 2002 | B1 |
6421211 | Hawwa et al. | Jul 2002 | B1 |
6421212 | Gibbons et al. | Jul 2002 | B1 |
6424505 | Lam et al. | Jul 2002 | B1 |
6424507 | Lederman et al. | Jul 2002 | B1 |
6430009 | Komaki et al. | Aug 2002 | B1 |
6430806 | Chen et al. | Aug 2002 | B1 |
6433965 | Gopinathan et al. | Aug 2002 | B1 |
6433968 | Shi et al. | Aug 2002 | B1 |
6433970 | Knapp et al. | Aug 2002 | B1 |
6437945 | Hawwa et al. | Aug 2002 | B1 |
6445536 | Rudy et al. | Sep 2002 | B1 |
6445542 | Levi et al. | Sep 2002 | B1 |
6445553 | Barr et al. | Sep 2002 | B2 |
6445554 | Dong et al. | Sep 2002 | B1 |
6447935 | Zhang et al. | Sep 2002 | B1 |
6448765 | Chen et al. | Sep 2002 | B1 |
6451514 | Iitsuka | Sep 2002 | B1 |
6452742 | Crue et al. | Sep 2002 | B1 |
6452765 | Mahvan et al. | Sep 2002 | B1 |
6456465 | Louis et al. | Sep 2002 | B1 |
6459552 | Liu et al. | Oct 2002 | B1 |
6462920 | Karimi | Oct 2002 | B1 |
6466401 | Hong et al. | Oct 2002 | B1 |
6466402 | Crue, Jr. et al. | Oct 2002 | B1 |
6466404 | Crue, Jr. et al. | Oct 2002 | B1 |
6466419 | Mao | Oct 2002 | B1 |
6468436 | Shi et al. | Oct 2002 | B1 |
6469877 | Knapp et al. | Oct 2002 | B1 |
6477019 | Matono et al. | Nov 2002 | B2 |
6479096 | Shi et al. | Nov 2002 | B1 |
6483662 | Thomas et al. | Nov 2002 | B1 |
6487040 | Hsiao et al. | Nov 2002 | B1 |
6487056 | Gibbons et al. | Nov 2002 | B1 |
6490125 | Barr | Dec 2002 | B1 |
6496330 | Crue, Jr. et al. | Dec 2002 | B1 |
6496334 | Pang et al. | Dec 2002 | B1 |
6504676 | Hiner et al. | Jan 2003 | B1 |
6512657 | Heist et al. | Jan 2003 | B2 |
6512659 | Hawwa et al. | Jan 2003 | B1 |
6512661 | Louis | Jan 2003 | B1 |
6512690 | Qi et al. | Jan 2003 | B1 |
6515573 | Dong et al. | Feb 2003 | B1 |
6515791 | Hawwa et al. | Feb 2003 | B1 |
6532823 | Knapp et al. | Mar 2003 | B1 |
6535363 | Hosomi et al. | Mar 2003 | B1 |
6552874 | Chen et al. | Apr 2003 | B1 |
6552928 | Qi et al. | Apr 2003 | B1 |
6577470 | Rumpler | Jun 2003 | B1 |
6583961 | Levi et al. | Jun 2003 | B2 |
6583968 | Scura et al. | Jun 2003 | B1 |
6597546 | Gill | Jul 2003 | B2 |
6597548 | Yamanaka et al. | Jul 2003 | B1 |
6611398 | Rumpler et al. | Aug 2003 | B1 |
6618223 | Chen et al. | Sep 2003 | B1 |
6629357 | Akoh | Oct 2003 | B1 |
6631055 | Childress et al. | Oct 2003 | B2 |
6633464 | Lai et al. | Oct 2003 | B2 |
6636394 | Fukagawa et al. | Oct 2003 | B1 |
6639291 | Sin et al. | Oct 2003 | B1 |
6650503 | Chen et al. | Nov 2003 | B1 |
6650506 | Risse | Nov 2003 | B1 |
6654195 | Frank, Jr. et al. | Nov 2003 | B1 |
6657816 | Barr et al. | Dec 2003 | B1 |
6661621 | Iitsuka | Dec 2003 | B1 |
6661625 | Sin et al. | Dec 2003 | B1 |
6674610 | Thomas et al. | Jan 2004 | B1 |
6680828 | Gill | Jan 2004 | B2 |
6680830 | Gill | Jan 2004 | B2 |
6680863 | Shi et al. | Jan 2004 | B1 |
6683763 | Hiner et al. | Jan 2004 | B1 |
6687098 | Huai | Feb 2004 | B1 |
6687178 | Qi et al. | Feb 2004 | B1 |
6687977 | Knapp et al. | Feb 2004 | B2 |
6691226 | Frank, Jr. et al. | Feb 2004 | B1 |
6697294 | Qi et al. | Feb 2004 | B1 |
6700738 | Sin et al. | Mar 2004 | B1 |
6700759 | Knapp et al. | Mar 2004 | B1 |
6704158 | Hawwa et al. | Mar 2004 | B2 |
6707083 | Hiner et al. | Mar 2004 | B1 |
6713801 | Sin et al. | Mar 2004 | B1 |
6721138 | Chen et al. | Apr 2004 | B1 |
6721149 | Shi et al. | Apr 2004 | B1 |
6721203 | Qi et al. | Apr 2004 | B1 |
6724569 | Chen et al. | Apr 2004 | B1 |
6724572 | Stoev et al. | Apr 2004 | B1 |
6724584 | Mack et al. | Apr 2004 | B2 |
6729015 | Matono et al. | May 2004 | B2 |
6735850 | Gibbons et al. | May 2004 | B1 |
6737281 | Dang et al. | May 2004 | B1 |
6738236 | Mao et al. | May 2004 | B1 |
6738237 | Gill | May 2004 | B2 |
6741432 | Pinarbasi | May 2004 | B2 |
6744607 | Freitag et al. | Jun 2004 | B2 |
6744608 | Chen et al. | Jun 2004 | B1 |
6747301 | Hiner et al. | Jun 2004 | B1 |
6751055 | Alfoqaha et al. | Jun 2004 | B1 |
6751845 | Gill | Jun 2004 | B2 |
6754049 | Seagle et al. | Jun 2004 | B1 |
6756071 | Shi et al. | Jun 2004 | B1 |
6757140 | Hawwa | Jun 2004 | B1 |
6760196 | Niu et al. | Jul 2004 | B1 |
6762910 | Knapp et al. | Jul 2004 | B1 |
6765756 | Hong et al. | Jul 2004 | B1 |
6775902 | Huai et al. | Aug 2004 | B1 |
6778358 | Jiang et al. | Aug 2004 | B1 |
6781798 | Gill | Aug 2004 | B2 |
6781927 | Heanuc et al. | Aug 2004 | B1 |
6785102 | Freitag et al. | Aug 2004 | B2 |
6785955 | Chen et al. | Sep 2004 | B1 |
6791793 | Chen et al. | Sep 2004 | B1 |
6791807 | Hikami et al. | Sep 2004 | B1 |
6798616 | Seagle et al. | Sep 2004 | B1 |
6798625 | Ueno et al. | Sep 2004 | B1 |
6801408 | Chen et al. | Oct 2004 | B1 |
6801411 | Lederman et al. | Oct 2004 | B1 |
6801412 | Gill | Oct 2004 | B2 |
6803615 | Sin et al. | Oct 2004 | B1 |
6806035 | Atireklapvarodom et al. | Oct 2004 | B1 |
6807030 | Hawwa et al. | Oct 2004 | B1 |
6807332 | Hawwa | Oct 2004 | B1 |
6809899 | Chen et al. | Oct 2004 | B1 |
6816345 | Knapp et al. | Nov 2004 | B1 |
6828897 | Nepela | Dec 2004 | B1 |
6829160 | Qi et al. | Dec 2004 | B1 |
6829819 | Crue, Jr. et al. | Dec 2004 | B1 |
6833979 | Knapp et al. | Dec 2004 | B1 |
6833982 | Jayasekara | Dec 2004 | B2 |
6834010 | Qi et al. | Dec 2004 | B1 |
6847510 | Childress et al. | Jan 2005 | B2 |
6856493 | Pinarbasi | Feb 2005 | B2 |
6859343 | Alfoqaha et al. | Feb 2005 | B1 |
6859348 | Pinarbasi | Feb 2005 | B2 |
6859997 | Tong et al. | Mar 2005 | B1 |
6861937 | Feng et al. | Mar 2005 | B1 |
6865062 | Pinarbasi | Mar 2005 | B2 |
6867952 | Hasegawa | Mar 2005 | B2 |
6867953 | Gill | Mar 2005 | B2 |
6870712 | Chen et al. | Mar 2005 | B2 |
6873494 | Chen et al. | Mar 2005 | B2 |
6873547 | Shi et al. | Mar 2005 | B1 |
6879464 | Sun et al. | Apr 2005 | B2 |
6888184 | Shi et al. | May 2005 | B1 |
6888704 | Diao et al. | May 2005 | B1 |
6891702 | Tang | May 2005 | B1 |
6894871 | Alfoqaha et al. | May 2005 | B2 |
6894877 | Crue, Jr. et al. | May 2005 | B1 |
6901652 | Hasegawa et al. | Jun 2005 | B2 |
6906894 | Chen et al. | Jun 2005 | B2 |
6909578 | Missell et al. | Jun 2005 | B1 |
6912106 | Chen et al. | Jun 2005 | B1 |
6933042 | Gill | Aug 2005 | B2 |
6934113 | Chen | Aug 2005 | B1 |
6934129 | Zhang et al. | Aug 2005 | B1 |
6940688 | Jiang et al. | Sep 2005 | B2 |
6942824 | Li | Sep 2005 | B1 |
6943993 | Chang et al. | Sep 2005 | B2 |
6943997 | Gill | Sep 2005 | B2 |
6944938 | Crue, Jr. et al. | Sep 2005 | B1 |
6947258 | Li | Sep 2005 | B1 |
6947264 | Gill | Sep 2005 | B2 |
6950266 | McCaslin et al. | Sep 2005 | B1 |
6954332 | Hong et al. | Oct 2005 | B1 |
6958885 | Chen et al. | Oct 2005 | B1 |
6961221 | Niu et al. | Nov 2005 | B1 |
6969989 | Mei | Nov 2005 | B1 |
6975486 | Chen et al. | Dec 2005 | B2 |
6983530 | Gill | Jan 2006 | B2 |
6987643 | Seagle | Jan 2006 | B1 |
6989962 | Dong et al. | Jan 2006 | B1 |
6989972 | Stoev et al. | Jan 2006 | B1 |
7006327 | Krounbi et al. | Feb 2006 | B2 |
7007372 | Chen et al. | Mar 2006 | B1 |
7012832 | Sin et al. | Mar 2006 | B1 |
7016168 | Li et al. | Mar 2006 | B2 |
7023658 | Knapp et al. | Apr 2006 | B1 |
7026063 | Ueno et al. | Apr 2006 | B2 |
7027268 | Zhu et al. | Apr 2006 | B1 |
7027274 | Sin et al. | Apr 2006 | B1 |
7035046 | Young et al. | Apr 2006 | B1 |
7035059 | Gill | Apr 2006 | B2 |
7035062 | Mao et al. | Apr 2006 | B1 |
7037847 | Le et al. | May 2006 | B2 |
7038889 | Freitag et al. | May 2006 | B2 |
7041985 | Wang et al. | May 2006 | B1 |
7046490 | Ueno et al. | May 2006 | B1 |
7050277 | Gill et al. | May 2006 | B2 |
7054113 | Seagle et al. | May 2006 | B1 |
7057857 | Niu et al. | Jun 2006 | B1 |
7059868 | Yan | Jun 2006 | B1 |
7072154 | Gill et al. | Jul 2006 | B2 |
7082017 | Freitag et al. | Jul 2006 | B2 |
7092195 | Liu et al. | Aug 2006 | B1 |
7092220 | Gill et al. | Aug 2006 | B2 |
7092221 | Gill | Aug 2006 | B2 |
7094130 | Cyrille et al. | Aug 2006 | B2 |
7110289 | Sin et al. | Sep 2006 | B1 |
7111382 | Knapp et al. | Sep 2006 | B1 |
7113366 | Wang et al. | Sep 2006 | B1 |
7114241 | Kubota et al. | Oct 2006 | B2 |
7116517 | He et al. | Oct 2006 | B1 |
7124654 | Davies et al. | Oct 2006 | B1 |
7126788 | Liu et al. | Oct 2006 | B1 |
7126790 | Liu et al. | Oct 2006 | B1 |
7131346 | Buttar et al. | Nov 2006 | B1 |
7133253 | Seagle et al. | Nov 2006 | B1 |
7134185 | Knapp et al. | Nov 2006 | B1 |
7154715 | Yamanaka et al. | Dec 2006 | B2 |
7161773 | Fontana, Jr. et al. | Jan 2007 | B2 |
7170725 | Zhou et al. | Jan 2007 | B1 |
7171741 | Gill | Feb 2007 | B2 |
7177117 | Jiang et al. | Feb 2007 | B1 |
7177120 | Freitag et al. | Feb 2007 | B2 |
7193815 | Stoev et al. | Mar 2007 | B1 |
7196878 | Fox et al. | Mar 2007 | B2 |
7196880 | Anderson et al. | Mar 2007 | B1 |
7199974 | Alfoqaha | Apr 2007 | B1 |
7199975 | Pan | Apr 2007 | B1 |
7211339 | Seagle et al. | May 2007 | B1 |
7212384 | Stoev et al. | May 2007 | B1 |
7220499 | Saito et al. | May 2007 | B2 |
7238292 | He et al. | Jul 2007 | B1 |
7239478 | Sin et al. | Jul 2007 | B1 |
7245463 | Gill | Jul 2007 | B2 |
7248431 | Liu et al. | Jul 2007 | B1 |
7248433 | Stoev et al. | Jul 2007 | B1 |
7248447 | Gill | Jul 2007 | B2 |
7248449 | Seagle | Jul 2007 | B1 |
7265946 | Gill | Sep 2007 | B2 |
7268980 | Gill | Sep 2007 | B2 |
7280325 | Pan | Oct 2007 | B1 |
7283327 | Liu et al. | Oct 2007 | B1 |
7284316 | Huai et al. | Oct 2007 | B1 |
7286329 | Chen et al. | Oct 2007 | B1 |
7289303 | Sin et al. | Oct 2007 | B1 |
7292409 | Stoev et al. | Nov 2007 | B1 |
7296339 | Yang et al. | Nov 2007 | B1 |
7307814 | Seagle et al. | Dec 2007 | B1 |
7307818 | Park et al. | Dec 2007 | B1 |
7310204 | Stoev et al. | Dec 2007 | B1 |
7313856 | Gill | Jan 2008 | B2 |
7318947 | Park et al. | Jan 2008 | B1 |
7324310 | Gill | Jan 2008 | B2 |
7330339 | Gill | Feb 2008 | B2 |
7333295 | Medina et al. | Feb 2008 | B1 |
7337530 | Stoev et al. | Mar 2008 | B1 |
7342752 | Zhang et al. | Mar 2008 | B1 |
7345854 | Takano | Mar 2008 | B2 |
7349170 | Rudman et al. | Mar 2008 | B1 |
7349179 | He et al. | Mar 2008 | B1 |
7354664 | Jiang et al. | Apr 2008 | B1 |
7363697 | Dunn et al. | Apr 2008 | B1 |
7365949 | Hayakawa et al. | Apr 2008 | B2 |
7369371 | Freitag et al. | May 2008 | B2 |
7370404 | Gill et al. | May 2008 | B2 |
7371152 | Newman | May 2008 | B1 |
7372665 | Stoev et al. | May 2008 | B1 |
7372674 | Gill | May 2008 | B2 |
7375926 | Stoev et al. | May 2008 | B1 |
7379269 | Krounbi et al. | May 2008 | B1 |
7382589 | Lin et al. | Jun 2008 | B2 |
7386933 | Krounbi et al. | Jun 2008 | B1 |
7389577 | Shang et al. | Jun 2008 | B1 |
7405908 | Gill | Jul 2008 | B2 |
7405909 | Gill | Jul 2008 | B2 |
7417832 | Erickson et al. | Aug 2008 | B1 |
7419610 | Cyrille et al. | Sep 2008 | B2 |
7419891 | Chen et al. | Sep 2008 | B1 |
7420787 | Freitag et al. | Sep 2008 | B2 |
7420788 | Pinarbasi | Sep 2008 | B2 |
7428124 | Song et al. | Sep 2008 | B1 |
7430098 | Song et al. | Sep 2008 | B1 |
7436620 | Kang et al. | Oct 2008 | B1 |
7436637 | Pinarbasi | Oct 2008 | B2 |
7436638 | Pan | Oct 2008 | B1 |
7440220 | Kang et al. | Oct 2008 | B1 |
7443632 | Stoev et al. | Oct 2008 | B1 |
7444740 | Chung et al. | Nov 2008 | B1 |
7463459 | Ding et al. | Dec 2008 | B2 |
7466524 | Freitag et al. | Dec 2008 | B2 |
7469465 | Ding et al. | Dec 2008 | B2 |
7493688 | Wang et al. | Feb 2009 | B1 |
7508627 | Zhang et al. | Mar 2009 | B1 |
7522377 | Jiang et al. | Apr 2009 | B1 |
7522379 | Krounbi et al. | Apr 2009 | B1 |
7522382 | Pan | Apr 2009 | B1 |
7522391 | Freitag et al. | Apr 2009 | B2 |
7522392 | Carey et al. | Apr 2009 | B2 |
7542246 | Song et al. | Jun 2009 | B1 |
7551406 | Thomas et al. | Jun 2009 | B1 |
7552523 | He et al. | Jun 2009 | B1 |
7554767 | Hu et al. | Jun 2009 | B1 |
7580230 | Freitag et al. | Aug 2009 | B2 |
7583466 | Kermiche et al. | Sep 2009 | B2 |
7595967 | Moon et al. | Sep 2009 | B1 |
7599155 | Saito et al. | Oct 2009 | B2 |
7602589 | Freitag et al. | Oct 2009 | B2 |
7616411 | Gill | Nov 2009 | B2 |
7639457 | Chen et al. | Dec 2009 | B1 |
7652856 | Pinarbasi | Jan 2010 | B2 |
7660080 | Liu et al. | Feb 2010 | B1 |
7663846 | Freitag et al. | Feb 2010 | B2 |
7672080 | Tang et al. | Mar 2010 | B1 |
7672086 | Jiang | Mar 2010 | B1 |
7676905 | Pinarbasi | Mar 2010 | B2 |
7684160 | Erickson et al. | Mar 2010 | B1 |
7688546 | Bai et al. | Mar 2010 | B1 |
7691434 | Zhang et al. | Apr 2010 | B1 |
7695761 | Shen et al. | Apr 2010 | B1 |
7697242 | Gill | Apr 2010 | B2 |
7719795 | Hu et al. | May 2010 | B2 |
7726009 | Liu et al. | Jun 2010 | B1 |
7729086 | Song et al. | Jun 2010 | B1 |
7729087 | Stoev et al. | Jun 2010 | B1 |
7736823 | Wang et al. | Jun 2010 | B1 |
7785666 | Sun et al. | Aug 2010 | B1 |
7796356 | Fowler et al. | Sep 2010 | B1 |
7800858 | Bajikar et al. | Sep 2010 | B1 |
7800867 | Saito et al. | Sep 2010 | B2 |
7819979 | Chen et al. | Oct 2010 | B1 |
7829264 | Wang et al. | Nov 2010 | B1 |
7846643 | Sun et al. | Dec 2010 | B1 |
7855854 | Hu et al. | Dec 2010 | B2 |
7869160 | Pan et al. | Jan 2011 | B1 |
7872824 | Macchioni et al. | Jan 2011 | B1 |
7872833 | Hu et al. | Jan 2011 | B2 |
7910267 | Zeng et al. | Mar 2011 | B1 |
7911735 | Sin et al. | Mar 2011 | B1 |
7911737 | Jiang et al. | Mar 2011 | B1 |
7916426 | Hu et al. | Mar 2011 | B2 |
7916435 | Gill | Mar 2011 | B1 |
7918013 | Dunn et al. | Apr 2011 | B1 |
7961440 | Gill et al. | Jun 2011 | B2 |
7968219 | Jiang et al. | Jun 2011 | B1 |
7982989 | Shi et al. | Jul 2011 | B1 |
8008912 | Shang | Aug 2011 | B1 |
8012804 | Wang et al. | Sep 2011 | B1 |
8015692 | Zhang et al. | Sep 2011 | B1 |
8018677 | Chung et al. | Sep 2011 | B1 |
8018678 | Zhang et al. | Sep 2011 | B1 |
8024748 | Moravec et al. | Sep 2011 | B1 |
8068317 | Gill | Nov 2011 | B2 |
8072705 | Wang et al. | Dec 2011 | B1 |
8074345 | Anguelouch et al. | Dec 2011 | B1 |
8077418 | Hu et al. | Dec 2011 | B1 |
8077434 | Shen et al. | Dec 2011 | B1 |
8077435 | Liu et al. | Dec 2011 | B1 |
8077557 | Hu et al. | Dec 2011 | B1 |
8079135 | Shen et al. | Dec 2011 | B1 |
8081403 | Chen et al. | Dec 2011 | B1 |
8091210 | Sasaki et al. | Jan 2012 | B1 |
8097846 | Anguelouch et al. | Jan 2012 | B1 |
8104166 | Zhang et al. | Jan 2012 | B1 |
8116043 | Leng et al. | Feb 2012 | B2 |
8116171 | Lee | Feb 2012 | B1 |
8125856 | Li et al. | Feb 2012 | B1 |
8134794 | Wang | Mar 2012 | B1 |
8136224 | Sun et al. | Mar 2012 | B1 |
8136225 | Zhang et al. | Mar 2012 | B1 |
8136805 | Lee | Mar 2012 | B1 |
8141235 | Zhang | Mar 2012 | B1 |
8146236 | Luo et al. | Apr 2012 | B1 |
8149536 | Yang et al. | Apr 2012 | B1 |
8149548 | Hatatani et al. | Apr 2012 | B2 |
8151441 | Rudy et al. | Apr 2012 | B1 |
8163185 | Sun et al. | Apr 2012 | B1 |
8164760 | Willis | Apr 2012 | B2 |
8164855 | Gibbons et al. | Apr 2012 | B1 |
8164864 | Kaiser et al. | Apr 2012 | B2 |
8165709 | Rudy | Apr 2012 | B1 |
8166631 | Tran et al. | May 2012 | B1 |
8166632 | Zhang et al. | May 2012 | B1 |
8169473 | Yu et al. | May 2012 | B1 |
8171618 | Wang et al. | May 2012 | B1 |
8179636 | Bai et al. | May 2012 | B1 |
8191237 | Luo et al. | Jun 2012 | B1 |
8194365 | Leng et al. | Jun 2012 | B1 |
8194366 | Li et al. | Jun 2012 | B1 |
8196285 | Zhang et al. | Jun 2012 | B1 |
8200054 | Li et al. | Jun 2012 | B1 |
8203800 | Li et al. | Jun 2012 | B2 |
8208350 | Hu et al. | Jun 2012 | B1 |
8220140 | Wang et al. | Jul 2012 | B1 |
8222599 | Chien | Jul 2012 | B1 |
8225488 | Zhang et al. | Jul 2012 | B1 |
8227023 | Liu et al. | Jul 2012 | B1 |
8228633 | Tran et al. | Jul 2012 | B1 |
8231796 | Li et al. | Jul 2012 | B1 |
8233248 | Li et al. | Jul 2012 | B1 |
8248896 | Yuan et al. | Aug 2012 | B1 |
8254060 | Shi et al. | Aug 2012 | B1 |
8257597 | Guan et al. | Sep 2012 | B1 |
8259410 | Bai et al. | Sep 2012 | B1 |
8259539 | Hu et al. | Sep 2012 | B1 |
8262918 | Li et al. | Sep 2012 | B1 |
8262919 | Luo et al. | Sep 2012 | B1 |
8264797 | Emley | Sep 2012 | B2 |
8264798 | Guan et al. | Sep 2012 | B1 |
8266785 | Freitag et al. | Sep 2012 | B2 |
8270126 | Roy et al. | Sep 2012 | B1 |
8276258 | Tran et al. | Oct 2012 | B1 |
8277669 | Chen et al. | Oct 2012 | B1 |
8279719 | Hu et al. | Oct 2012 | B1 |
8284517 | Sun et al. | Oct 2012 | B1 |
8288204 | Wang et al. | Oct 2012 | B1 |
8289821 | Huber | Oct 2012 | B1 |
8291743 | Shi et al. | Oct 2012 | B1 |
8307539 | Rudy et al. | Nov 2012 | B1 |
8307540 | Tran et al. | Nov 2012 | B1 |
8308921 | Hiner et al. | Nov 2012 | B1 |
8310785 | Zhang et al. | Nov 2012 | B1 |
8310901 | Batra et al. | Nov 2012 | B1 |
8315019 | Mao et al. | Nov 2012 | B1 |
8316527 | Hong et al. | Nov 2012 | B2 |
8318030 | Peng et al. | Nov 2012 | B2 |
8320076 | Shen et al. | Nov 2012 | B1 |
8320077 | Tang et al. | Nov 2012 | B1 |
8320219 | Wolf et al. | Nov 2012 | B1 |
8320220 | Yuan et al. | Nov 2012 | B1 |
8320722 | Yuan et al. | Nov 2012 | B1 |
8322022 | Yi et al. | Dec 2012 | B1 |
8322023 | Zeng et al. | Dec 2012 | B1 |
8325569 | Shi et al. | Dec 2012 | B1 |
8333008 | Sin et al. | Dec 2012 | B1 |
8333898 | Brown et al. | Dec 2012 | B2 |
8334093 | Zhang et al. | Dec 2012 | B2 |
8336194 | Yuan et al. | Dec 2012 | B2 |
8339738 | Tran et al. | Dec 2012 | B1 |
8341826 | Jiang et al. | Jan 2013 | B1 |
8343319 | Li et al. | Jan 2013 | B1 |
8343364 | Gao et al. | Jan 2013 | B1 |
8349195 | Si et al. | Jan 2013 | B1 |
8351307 | Wolf et al. | Jan 2013 | B1 |
8357244 | Zhao et al. | Jan 2013 | B1 |
8373945 | Luo et al. | Feb 2013 | B1 |
8375564 | Luo et al. | Feb 2013 | B1 |
8375565 | Hu et al. | Feb 2013 | B2 |
8381391 | Park et al. | Feb 2013 | B2 |
8385157 | Champion et al. | Feb 2013 | B1 |
8385158 | Hu et al. | Feb 2013 | B1 |
8394280 | Wan et al. | Mar 2013 | B1 |
8400731 | Li et al. | Mar 2013 | B1 |
8400738 | Covington et al. | Mar 2013 | B2 |
8404128 | Zhang et al. | Mar 2013 | B1 |
8404129 | Luo et al. | Mar 2013 | B1 |
8405930 | Li et al. | Mar 2013 | B1 |
8409453 | Jiang et al. | Apr 2013 | B1 |
8413317 | Wan et al. | Apr 2013 | B1 |
8416540 | Li et al. | Apr 2013 | B1 |
8419953 | Su et al. | Apr 2013 | B1 |
8419954 | Chen et al. | Apr 2013 | B1 |
8422176 | Leng et al. | Apr 2013 | B1 |
8422342 | Lee | Apr 2013 | B1 |
8422841 | Shi et al. | Apr 2013 | B1 |
8424192 | Yang et al. | Apr 2013 | B1 |
8441756 | Sun et al. | May 2013 | B1 |
8443510 | Shi et al. | May 2013 | B1 |
8444866 | Guan et al. | May 2013 | B1 |
8449948 | Medina et al. | May 2013 | B2 |
8451556 | Wang et al. | May 2013 | B1 |
8451563 | Zhang et al. | May 2013 | B1 |
8454846 | Zhou et al. | Jun 2013 | B1 |
8455119 | Jiang et al. | Jun 2013 | B1 |
8456961 | Wang et al. | Jun 2013 | B1 |
8456963 | Hu et al. | Jun 2013 | B1 |
8456964 | Yuan et al. | Jun 2013 | B1 |
8456966 | Shi et al. | Jun 2013 | B1 |
8456967 | Mallary | Jun 2013 | B1 |
8458892 | Si et al. | Jun 2013 | B2 |
8462592 | Wolf et al. | Jun 2013 | B1 |
8468682 | Zhang | Jun 2013 | B1 |
8472288 | Wolf et al. | Jun 2013 | B1 |
8480911 | Osugi et al. | Jul 2013 | B1 |
8486285 | Zhou et al. | Jul 2013 | B2 |
8486286 | Gao et al. | Jul 2013 | B1 |
8488272 | Tran et al. | Jul 2013 | B1 |
8491801 | Tanner et al. | Jul 2013 | B1 |
8491802 | Gao et al. | Jul 2013 | B1 |
8493693 | Zheng et al. | Jul 2013 | B1 |
8493695 | Kaiser et al. | Jul 2013 | B1 |
8495813 | Hu et al. | Jul 2013 | B1 |
8498084 | Leng et al. | Jul 2013 | B1 |
8506828 | Osugi et al. | Aug 2013 | B1 |
8514517 | Batra et al. | Aug 2013 | B1 |
8518279 | Wang et al. | Aug 2013 | B1 |
8518832 | Yang et al. | Aug 2013 | B1 |
8520336 | Liu et al. | Aug 2013 | B1 |
8520337 | Liu et al. | Aug 2013 | B1 |
8524068 | Medina et al. | Sep 2013 | B2 |
8526275 | Yuan et al. | Sep 2013 | B1 |
8531801 | Xiao et al. | Sep 2013 | B1 |
8532450 | Wang et al. | Sep 2013 | B1 |
8533937 | Wang et al. | Sep 2013 | B1 |
8537494 | Pan et al. | Sep 2013 | B1 |
8537495 | Luo et al. | Sep 2013 | B1 |
8537502 | Park et al. | Sep 2013 | B1 |
8545999 | Leng et al. | Oct 2013 | B1 |
8547659 | Bai et al. | Oct 2013 | B1 |
8547667 | Roy et al. | Oct 2013 | B1 |
8547730 | Shen et al. | Oct 2013 | B1 |
8555486 | Medina et al. | Oct 2013 | B1 |
8559141 | Pakala et al. | Oct 2013 | B1 |
8563146 | Zhang et al. | Oct 2013 | B1 |
8565049 | Tanner et al. | Oct 2013 | B1 |
8576517 | Tran et al. | Nov 2013 | B1 |
8578594 | Jiang et al. | Nov 2013 | B2 |
8582238 | Liu et al. | Nov 2013 | B1 |
8582241 | Yu et al. | Nov 2013 | B1 |
8582253 | Zheng et al. | Nov 2013 | B1 |
8588039 | Shi et al. | Nov 2013 | B1 |
8593914 | Wang et al. | Nov 2013 | B2 |
8597528 | Roy et al. | Dec 2013 | B1 |
8599520 | Liu et al. | Dec 2013 | B1 |
8599657 | Lee | Dec 2013 | B1 |
8603593 | Roy et al. | Dec 2013 | B1 |
8607438 | Gao et al. | Dec 2013 | B1 |
8607439 | Wang et al. | Dec 2013 | B1 |
8611035 | Bajikar et al. | Dec 2013 | B1 |
8611054 | Shang et al. | Dec 2013 | B1 |
8611055 | Pakala et al. | Dec 2013 | B1 |
8614864 | Hong et al. | Dec 2013 | B1 |
8619512 | Yuan et al. | Dec 2013 | B1 |
8625233 | Ji et al. | Jan 2014 | B1 |
8625941 | Shi et al. | Jan 2014 | B1 |
8628672 | Si et al. | Jan 2014 | B1 |
8630068 | Mauri et al. | Jan 2014 | B1 |
8634280 | Wang et al. | Jan 2014 | B1 |
8638529 | Leng et al. | Jan 2014 | B1 |
8643980 | Fowler et al. | Feb 2014 | B1 |
8649123 | Zhang et al. | Feb 2014 | B1 |
8665561 | Knutson et al. | Mar 2014 | B1 |
8670211 | Sun et al. | Mar 2014 | B1 |
8670213 | Zeng et al. | Mar 2014 | B1 |
8670214 | Knutson et al. | Mar 2014 | B1 |
8670294 | Shi et al. | Mar 2014 | B1 |
8670295 | Hu et al. | Mar 2014 | B1 |
8675318 | Ho et al. | Mar 2014 | B1 |
8675455 | Krichevsky et al. | Mar 2014 | B1 |
8681594 | Shi et al. | Mar 2014 | B1 |
8689430 | Chen et al. | Apr 2014 | B1 |
8693141 | Elliott et al. | Apr 2014 | B1 |
8703397 | Zeng et al. | Apr 2014 | B1 |
8705205 | Li et al. | Apr 2014 | B1 |
8711518 | Zeng et al. | Apr 2014 | B1 |
8711528 | Xiao et al. | Apr 2014 | B1 |
8717709 | Shi et al. | May 2014 | B1 |
8720044 | Tran et al. | May 2014 | B1 |
8721902 | Wang et al. | May 2014 | B1 |
8724259 | Liu et al. | May 2014 | B1 |
8749790 | Tanner et al. | Jun 2014 | B1 |
8749920 | Knutson et al. | Jun 2014 | B1 |
8753903 | Tanner et al. | Jun 2014 | B1 |
8760807 | Zhang et al. | Jun 2014 | B1 |
8760818 | Diao et al. | Jun 2014 | B1 |
8760819 | Liu et al. | Jun 2014 | B1 |
8760822 | Li et al. | Jun 2014 | B1 |
8760823 | Chen et al. | Jun 2014 | B1 |
8763235 | Wang et al. | Jul 2014 | B1 |
8780498 | Jiang et al. | Jul 2014 | B1 |
8780505 | Xiao | Jul 2014 | B1 |
8786983 | Liu et al. | Jul 2014 | B1 |
8790524 | Luo et al. | Jul 2014 | B1 |
8790527 | Luo et al. | Jul 2014 | B1 |
8792208 | Liu et al. | Jul 2014 | B1 |
8792312 | Wang et al. | Jul 2014 | B1 |
8793866 | Zhang et al. | Aug 2014 | B1 |
8797680 | Luo et al. | Aug 2014 | B1 |
8797684 | Tran et al. | Aug 2014 | B1 |
8797686 | Bai et al. | Aug 2014 | B1 |
8797692 | Guo et al. | Aug 2014 | B1 |
8813324 | Emley et al. | Aug 2014 | B2 |
20020131219 | Mack et al. | Sep 2002 | A1 |
20030123198 | Sugawara et al. | Jul 2003 | A1 |
20030179520 | Hasegawa | Sep 2003 | A1 |
20040061983 | Childress et al. | Apr 2004 | A1 |
20040166368 | Gill et al. | Aug 2004 | A1 |
20050270703 | Hayakawa et al. | Dec 2005 | A1 |
20060023375 | Gill | Feb 2006 | A1 |
20060092582 | Gill et al. | May 2006 | A1 |
20060230601 | Gill et al. | Oct 2006 | A1 |
20060232893 | Gill et al. | Oct 2006 | A1 |
20060285259 | Gill et al. | Dec 2006 | A1 |
20080180863 | Gill | Jul 2008 | A1 |
20090086385 | Gill et al. | Apr 2009 | A1 |
20090316308 | Saito et al. | Dec 2009 | A1 |
20100232072 | Dimitrov et al. | Sep 2010 | A1 |
20100290157 | Zhang et al. | Nov 2010 | A1 |
20110086240 | Xiang et al. | Apr 2011 | A1 |
20110228428 | Dimitrov et al. | Sep 2011 | A1 |
20120111826 | Chen et al. | May 2012 | A1 |
20120134057 | Song et al. | May 2012 | A1 |
20120216378 | Emley et al. | Aug 2012 | A1 |
20120237878 | Zeng et al. | Sep 2012 | A1 |
20120276415 | Sapozhnikov et al. | Nov 2012 | A1 |
20120298621 | Gao | Nov 2012 | A1 |
20130082696 | Le et al. | Apr 2013 | A1 |
20130092654 | Balamane et al. | Apr 2013 | A1 |
20130216702 | Kaiser et al. | Aug 2013 | A1 |
20130216863 | Li et al. | Aug 2013 | A1 |
20130257421 | Shang et al. | Oct 2013 | A1 |
20140154529 | Yang et al. | Jun 2014 | A1 |
20140175050 | Zhang et al. | Jun 2014 | A1 |
Entry |
---|
Gerardo A. Bertero, et al., U.S. Appl. No. 13/538,660, filed Jun. 29, 2012, 48 pages. |
Yimin Guo, et al., U.S. Appl. No. 12/731,108, filed Mar. 24, 2010, 25 pages. |
Advisory Action dated Aug. 25, 2014 from U.S. Appl. No. 13/538,660, 3 pages. |
Office Action dated Jun. 19, 2014 from U.S. Appl. No. 13/538,660, 15 pages. |
Office Action dated Dec. 19, 2013 from U.S. Appl. No. 13/538,660, 11 pages. |
Wei Gao, et al., U.S. Appl. No. 13/963,328, filed Aug. 9, 2013, 18 pages. |
Number | Date | Country | |
---|---|---|---|
Parent | 13538660 | Jun 2012 | US |
Child | 14556411 | US |