The present application claims the benefit of priority to Chinese patent application No. 201110073624.2 titled “METHOD FOR CLEANING GAS CONVEYING DEVICE, AND METHOD AND REACTION DEVICE FOR FILM GROWTH”, filed with the Chinese State Intellectual Property Office on Mar. 25, 2011, which is incorporated herein by reference in its entirety.
The present application relates to a device and method for film growth, and in particular to a film growth reaction device, a film growth method, and a method for cleaning a gas conveying device in the film growth reaction device.
As a kind of typical group III and group V element compound films, gallium nitride (GaN) is a material widely used to manufacture a blue light emitting diode, a purple light emitting diode, a white light emitting diode, an ultraviolet detector and a high power microwave transistor. Since GaN has practical and potential applications in manufacturing low energy consumption devices (such as an LED) which are widely used, GaN film growth has attracted great attention.
The GaN film may grow with various methods, including a molecular beam epitaxy (MBE) method, a hydride vapor phase epitaxy (HVPE) method, a metal organic chemical vapor deposition (MOCVD) method and so on. At present, the MOCVD method is a preferred deposition method for obtaining a film with enough quality used for the manufacture of an LED.
The MOCVD process is generally performed in a reactor or a reaction chamber at a relatively high temperature by a thermal processing method. Generally, a first precursor gas including a group III element (such as gallium (Ga)) and a second precursor gas (such as ammonia (NH3)) including nitrogen are fed into the reaction chamber by a gas conveying device to react so as to form a GaN film on a heated substrate. A carrier gas may also be used to assist the transportation of the precursor gases onto the substrate. A group III nitride film (such as a GaN film) is formed by the mixed reaction of the precursor gases on a heated surface of the substrate and then is deposited on the surface of the substrate.
However, during the MOCVD film growth process, the GaN film or other reaction products are not only grown or deposited on the substrate, but also grown or deposited on the inner surface of the reaction chamber including the surface of the gas conveying device. These undesired deposits or residues are accumulated, which may produce adhered aggregates such as powder and particles in the reaction chamber, and may peel off from the adhering surface to spread everywhere in the reaction chamber along with the flow of the reaction gases and to finally fall on the processed substrate, thereby causing defects or ineffective of the substrate and contamination in the reaction chamber which has adverse effects on the quality of the next MOCVD process. Thus, after the MOCVD film growth process is performed for a period of time, the film growth process has to be stopped to specially carry out a cleaning process for the reaction chamber, i.e. to remove the aggregates adhered to the gas conveying device.
At present, the method for cleaning the gas conveying device in the art is “manual cleaning”. That is, an operator must stop the film growth process, open a top cover of the reaction chamber after the temperature in the reaction chamber is reduced to a certain temperature, manually brush away the deposits or residues adhered to the gas conveying device from the adhering surface with a brush, and remove them to the outside of the reaction chamber by a vacuum suction method. If the deposits or residues are very thick, the operator needs to manually scrape off them from the adhering surface with a tool and remove them to the outside of the reaction chamber. This cleaning method has some disadvantages. Specifically, for performing the cleaning process, the film growth process needs to be stopped, and it has to wait for a quite long time allowing the temperature in the reaction chamber to be reduced to a suitable temperature for the manual cleaning, and it has to be manually performed by the operator under the condition that the top cover of the reaction chamber is opened. Thus, for a user of the reaction chamber, the throughput of the process production of the reaction chamber is reduced, and the use cost of the producer is increased. Further, due to the “manual cleaning”, it is impossible to realize automatic cleaning process of the system, and to ensure the consistent results of cleaning process, causing that deviations and defects in process quality may occur in the subsequent film growth process.
Therefore, there is a need to develop a device and method for cleaning the gas conveying device and the inner surface of the reaction chamber, which is highly automatic, effective and timesaving, and may ensure the quality and consistency of cleaning, and does not have adverse effects on the subsequent film growth.
In view of the above problems in the prior art, an object of the present application is to provide a device and method for in-situ cleaning a gas conveying device in a film growth reaction chamber in a highly automatic, effective and timesaving manner.
Another object of the present application is to provide a method for film growth.
Yet another object of the present application is to provide a reaction device for film growth on a substrate.
Still another object of the present application is to provide a cleaning device for cleaning a gas conveying device.
A further object of the present application is to provide a method and device for removing adhered aggregates on the inner surface of the film growth reaction chamber.
According to one aspect of the present application, a method for cleaning a gas conveying device in a film growth reaction chamber is provided in the present application, wherein the gas conveying device includes a gas conveying surface for releasing reaction gases into the reaction chamber, and a supporting device is provided in the reaction chamber. The method includes:
a) providing a cleaning device and detachably mounting the cleaning device on the supporting device, wherein the cleaning device includes a surface facing the gas conveying surface and provided with a plurality of scraping structures thereon; and
b) adjusting position of the cleaning device such that the scraping structures at least partially contact with the gas conveying surface of the gas conveying device, and rotating the cleaning device such that the scraping structures contact with the gas conveying surface and remove adhered aggregates adhered to the gas conveying surface.
The method further includes: providing a rotary driving device connected to the supporting device, and starting the rotary driving device to drive the supporting device and the cleaning device to rotate together.
The film growth reaction chamber is a film epitaxial growth reaction chamber.
The method further includes: providing a suction port in fluid communication with the inside of the reaction chamber, wherein the suction port is connected to an air exhaust pump or a blower; and operating the air exhaust pump or the blower to perform a suction function.
The suction port is provided in a bottom portion or a side wall of the reaction chamber.
The suction port is provided in a side wall of the reaction chamber, and located in a horizontal space formed by the gas conveying surface and the surface of the cleaning device and adjacent to the scraping structures of the cleaning device.
The method further includes: providing an aggregate collecting device in fluid communication with the suction port to collect the adhered aggregates.
An aggregate collecting device in fluid communication with the suction port is provided inside the cleaning device to collect the adhered aggregates.
The method further includes: before step a), unloading a substrate carrier, wherein the substrate carrier is located in the reaction chamber and is detachably mounted on the supporting device, and in the step of unloading the substrate carrier, the substrate carrier is detached from the supporting device and is moved out of the reaction chamber.
The supporting device also acts as a supporting device for carrying a substrate carrier in the reaction chamber.
The supporting device includes a rotatable shaft having a supporting end or a supporting surface.
The cleaning device further includes a connecting surface on which a concave portion is provided, and the supporting end of the rotatable shaft is detachably received in the concave portion.
The supporting device includes a rotation shaft main body and at least three supporting ends extending outwards from the rotation shaft main body, with the at least three supporting ends collectively supporting the cleaning device.
The supporting device includes a first supporting member and a second supporting member connected to the first supporting member. The second supporting member supports the cleaning device, and the rotary driving device is connected to the first supporting member and drives the first supporting member and the second supporting member to move together.
The supporting device includes a first supporting member and a second supporting member collectively supporting the cleaning device, and the rotary driving device is connected to the first supporting member and drives the first supporting member and the second supporting member to move together.
A substrate carrier is further provided in the reaction chamber. The substrate carrier is configured to convey and support the substrate, is detachably mounted on the supporting device and contacts with the supporting device at least during the film growth process performed in the reaction chamber, and can be easily removed from the supporting device so as to be conveyed for loading or unloading the substrate.
The cleaning device is a dummy of a substrate carrier, and a connecting portion between the cleaning device and the supporting device has the same structure and size as those of the connecting portion between the substrate carrier and the supporting device.
The scraping structures are bristle structures, or ridged scraping blade structures, or a combination thereof.
The gas conveying device is a gas distribution showerhead device, or an injector-type gas dispersing device, or a combination thereof.
The rotary driving device includes a motor.
The method further includes: providing a mechanical conveying device located outside the reaction chamber, wherein the mechanical conveying device includes a conveying robot, the conveying robot is configured to selectively convey the cleaning device into the reaction chamber from the outside of the reaction chamber and place the cleaning device onto the supporting device, or remove the cleaning device from the supporting device and convey the cleaning device to the outside of the reaction chamber.
Step b) further includes the step of blowing inert gases or H2 into the reaction chamber via the gas conveying surface of the gas conveying device.
According to another aspect of the present application, a method for film growth in a reaction chamber is provided in the present application, wherein a supporting device having a supporting end or a supporting surface is provided in the reaction chamber. The method includes:
a) providing a substrate carrier on which one or more substrates to be processed is loaded;
b) moving the substrate carrier into the reaction chamber and detachably mounting the substrate carrier on the supporting end or the supporting surface of the supporting device;
c) feeding reaction gases into the reaction chamber by a gas conveying device and rotating the supporting device and the substrate carrier for film growth on the substrate;
d) stopping step c), detaching the substrate carrier from the supporting end or the supporting surface of the supporting device and moving the substrate carrier out of the reaction chamber;
e) providing a cleaning device and moving the cleaning device into the reaction chamber, and detachably mounting the cleaning device on the supporting end or the supporting surface of the supporting device, wherein the cleaning device includes a surface facing the gas conveying surface and provided with a plurality of scraping structures;
f) adjusting position of the cleaning device such that the plurality of scraping structures at least partially contact with the gas conveying surface;
g) rotating the supporting device and the cleaning device, such that the plurality of scraping structures at least partially contact with the gas conveying surface and remove adhered aggregates adhered to the gas conveying surface; and
h) stopping step g), detaching the cleaning device from the supporting end or the supporting surface of the supporting device and moving the cleaning device out of the reaction chamber.
Step g) further includes: providing a suction port in fluid communication with the inside of the reaction chamber, wherein the suction port is connected to an air exhaust pump or a blower; and operating the air exhaust pump or the blower to perform a suction function.
Step g) further includes: blowing inert gases or H2 into the reaction chamber via the gas conveying surface of the gas conveying device.
The method further includes: providing an aggregate collecting device in fluid communication with the suction port to collect the adhered aggregates.
An aggregate collecting device in fluid communication with the suction port is provided inside the cleaning device to collect the adhered aggregates.
The supporting device is a rotatable shaft having the supporting end or the supporting surface.
The cleaning device further includes a connecting surface, and a concave portion is provided at the center area of the connecting surface, with the supporting end of the rotatable shaft being detachably received in the concave portion.
The supporting device includes a first supporting member and a second supporting member connected to the first supporting member. The second supporting member supports the cleaning device, and the first supporting member is connected to a rotary driving device which drives the first supporting member and the second supporting member to move together.
The supporting device includes a first supporting member and a second supporting member collectively supporting the cleaning device, and the first supporting member is connected to a rotary driving device which drives the first supporting member and the second supporting member to move together.
The cleaning device is a dummy of a substrate carrier, and a connecting portion between the cleaning device and the supporting device has the same structure and size as those of the connecting portion between the substrate carrier and the supporting device.
The scraping structures are bristle structures, or ridged scraping blade structures, or a combination thereof.
The gas conveying device is a gas distribution showerhead device, or an injector-type gas dispersing device, or a combination thereof.
Step g) includes: providing a rotary driving device connected to the supporting device; starting the rotary driving device to drive the supporting device and the cleaning device to rotate together.
The method further includes: providing a mechanical conveying device located outside the reaction chamber, wherein the mechanical conveying device includes a conveying robot, the conveying robot is configured to selectively convey the cleaning device or the substrate carrier into the reaction chamber from the outside of the reaction chamber and place the cleaning device or the substrate carrier onto the supporting device, or remove the cleaning device or the substrate carrier from the supporting device and convey the cleaning device or the substrate carrier to the outside of the reaction chamber.
During the process of implementing the method, the reaction chamber cover of the reaction chamber remains in a closed state.
According to a further aspect of the present application, a reaction device for film growth on a substrate is further provided in the present application, including:
a reaction chamber;
a gas conveying device provided in the reaction chamber and including a gas conveying surface for releasing reaction gases into the reaction chamber to form a compound film on the substrate;
a supporting device provided in the reaction chamber;
a substrate carrier configured to convey and support the substrate, wherein the substrate carrier is detachably mounted on the supporting device and contacts with the supporting device at least during the film growth process, and can be easily removed from the supporting device so as to be conveyed for loading or unloading the substrate;
a cleaning device configured to be detachably mounted on the supporting device and contact with the supporting device at least during a cleaning process, wherein the cleaning device can be easily removed from the supporting device and moved out of the reaction chamber, and the cleaning device includes a surface facing the gas conveying surface and provided with a plurality of scraping structures; and
a rotary driving device configured to selectively drive the plurality of scraping structures on the cleaning device to rotate;
wherein the cleaning device may be located in the reaction chamber at a position where at least part of the plurality of scraping structures contact with the gas conveying surface, and remove adhered aggregates adhered on the gas conveying surface.
The reaction device further includes a suction port in fluid communication with the inside of the reaction chamber, wherein the suction port is connected to an air exhaust pump or a blower.
The suction port is provided in a bottom portion or a side wall of the reaction chamber.
The suction port is provided in a side wall of the reaction chamber, and located in a horizontal space formed by the gas conveying surface and the surface of the cleaning device and adjacent to the scraping structures of the cleaning device.
The reaction device further includes an aggregate collecting device in fluid communication with the suction port to collect the adhered aggregates.
An aggregate collecting device in fluid communication with the suction port is provided inside the cleaning device to collect the adhered aggregates.
The cleaning device is a dummy of a substrate carrier, and a connecting portion between the cleaning device and the supporting device has the same structure and size as those of the connecting portion between the substrate carrier and the supporting device.
The scraping structures are bristle structures, or ridged scraping blade structures, or a combination thereof.
The supporting device is a rotatable shaft having at least a supporting end or a supporting surface.
Each of the substrate carrier and the cleaning device includes a connecting surface, and a concave portion is provided at the center area of each of the two connecting surfaces, with the supporting end of the rotatable shaft is detachably received in the central concave portions of the substrate carrier and the cleaning device.
The supporting device includes a rotation shaft main body and at least three supporting ends extending outwards from the rotation shaft main body, with the at least three supporting ends collectively supporting the cleaning device.
The supporting device includes a first supporting member and a second supporting member connected to the first supporting member. The second supporting member supports the cleaning device, and the first supporting member is connected to a rotary driving device which drives the first supporting member and the second supporting member to move together.
The supporting device includes a first supporting member and a second supporting member collectively supporting the cleaning device, and the first supporting member is connected to a rotary driving device which drives the first supporting member and the second supporting member to move together.
The gas conveying device is a gas distribution showerhead device, or an injector-type gas dispersing device, or a combination thereof.
The rotary driving device is a motor.
The reaction device further includes a mechanical conveying device located outside the reaction chamber, wherein the mechanical conveying device includes a conveying robot, the conveying robot is configured to selectively convey the cleaning device or the substrate carrier into the reaction chamber from the outside of the reaction chamber and place the cleaning device or the substrate carrier onto the supporting device, or remove the cleaning device or the substrate carrier from the supporting device and convey the cleaning device or the substrate carrier to the outside of the reaction chamber.
The cleaning device further includes a barrier device provided in the peripheral of the plurality of scraping structures and encircling the plurality of scraping structures.
A barrier device is further provided in the reaction chamber, and the barrier device is provided adjacent to the peripheral of the gas conveying device and encircles the plurality of scraping structures of the cleaning device.
The cleaning device further includes a second surface facing an inner side wall of the reaction chamber, and a plurality of scraping structures are provided on the second surface.
According to yet another aspect of the present application, a method for removing adhered aggregates on inner surfaces of a film growth reaction chamber is further provided in the present application, wherein a supporting device is provided in the reaction chamber. The method includes:
a) providing a cleaning device and detachably mounting the cleaning device on the supporting device, wherein the cleaning device includes one or more surfaces facing the inner surfaces of the reaction chamber and provided with a plurality of scraping structures thereon; and
b) adjusting position of the cleaning device such that the scraping structures at least partially contact with the inner surfaces of the reaction chamber, and rotating the cleaning device such that the scraping structures contact with the inner surfaces of the reaction chamber and remove the adhered aggregates adhered to the inner surfaces of the reaction chamber.
The inner surface of the reaction chamber includes an inner side wall of the reaction chamber and/or a gas conveying surface of a gas conveying device.
a shows a device for implementing the cleaning method of the present application according to an embodiment of the present application;
b is a schematic view of the process of cleaning a gas conveying device by the device as shown in
a and 3b are perspective schematic views of the cleaning device in
a is a perspective schematic view of an assembly of the cleaning device and the supporting device;
b is a cross-sectional schematic view of the cleaning device and the supporting device taken along a certain cross section line;
a and 7b are respectively a perspective schematic view and a cross-sectional schematic view illustrating the assembly of another embodiment of the cleaning device and the supporting device as shown in
a, 8b and 8c are schematic views respectively illustrating the assembly of the above cleaning device and another embodiment of the supporting device;
a is a schematic view illustrating another device for cleaning the gas conveying device according to the present application as well as the cleaning process;
b and 9c are respectively a perspective schematic view and a cross-sectional schematic view of the cleaning device in
a is a schematic view illustrating another device for cleaning the gas conveying device according to the present application as well as the cleaning process;
b and 11c are respectively a perspective schematic view and a cross-sectional schematic view of the cleaning device in
a is a schematic view illustrating another device for cleaning a gas conveying device according to the present application as well as the cleaning process;
b and 13c are respectively a perspective schematic view and a cross-sectional schematic view of the cleaning device in
The present application will be described in detail in conjunction with drawings and embodiments hereinafter.
Before performing the film growth process, the elevating driving device 5b is actuated firstly to adjust the height of the supporting device 3 in the reaction chamber 1 (in the direction indicated by the arrow 40), such that the supporting device 3 reaches a position corresponding to the substrate conveying opening 12a; then the valve 12b is shifted to open the substrate conveying opening 12a; the substrate carrier 8′ preloaded with a plurality of substrates to be processed is conveyed into the reaction chamber 1 by an appropriate method and is placed on a supporting end 3a of the supporting device 3; then the valve 12b is closed; and the elevating driving device 5b is actuated to raise the height of the supporting device 3 (along the reverse direction indicated by the arrow 40) such that the substrate carrier 8 may have an appropriate distance from the gas conveying device 2. Next, the rotary driving device 5a is actuated to rotate the supporting device 3, and then the supporting device 3 drives the substrate carrier 8 to rotate together. The gas conveying device 2 supplies reaction gases into the reaction chamber 1 via a gas conveying surface 20 thereof so as to grow film on the substrates 8a.
After the film growth process is performed in the reaction chamber 1 for a period of time, adhered aggregates, deposits or residues 22 may accumulated on the gas conveying surface 20 of the gas conveying device 2. In the prior art, for cleaning the gas conveying device 2, an operator has to open a top cover 13 of the reaction chamber after the temperature in the reaction chamber 1 is reduced to a certain temperature, and then remove the adhered aggregates, deposits or residues 22 from the gas conveying surface 20 manually.
To clean the gas conveying device effectively and automatically, a device 100 as shown in
Referring to
As described above, after the film growth process is performed for a period of time in the reaction chamber 1 in
Then, referring to
As an exemplary embodiment, a device for implementing the suction process is provided as schematically shown in
In
It should be understood that, the above suction port 31 may be arranged at another position as actually needed, as long as the suction port is provided so as to be in fluid communication with the inside of the reaction chamber. For example, the suction port may also be provided at a bottom portion or a side wall of the reaction chamber 1.
a, 3b are perspective schematic views of the cleaning device 6 as shown in
An embodiment of the above supporting device 3 is shown in
a is a schematic view illustrating the assembly of the above cleaning device and another embodiment of the supporting device. A supporting device 28 as shown in
b is a schematic view illustrating the assembly of the above cleaning device and another embodiment of the supporting device. A supporting device 29 as shown in
c is a schematic view illustrating the assembly of the above cleaning device and another embodiment of the supporting device. A supporting device 30 as shown in
a is a schematic view illustrating another device for cleaning the gas conveying device according to the present application as well as the cleaning process.
It should be understood that, the passages 76 provided in the first connecting plate 71 and extending through upper and bottom surfaces of the plate may also be varied into any other passage structures through which may allow the adhered aggregates 22 and gases to pass, such as various hollow structures, or grooves, or a combination of grooves and holes. Further, the locations of grooves or holes may be varied according to the practical requirements, for example, elongate grooves, annular grooves or annular holes.
In
a is a schematic view illustrating another device for cleaning the gas conveying device according to the present application as well as the cleaning process.
It should be understood that, the above gas passages 95 and 97 may also be varied into other forms, such as various hollow structures, or grooves, or slots, or a combination of grooves and holes.
a is a schematic view illustrating another device for cleaning a gas conveying device according to the present application as well as the cleaning process.
An aggregate filtering device 464 is further provided in the cavity 467 inside the main body 460. The aggregate filtering device 464, the first connecting plate 461 and a part of the connecting structure 463 define and form an aggregate collecting cavity 466a which is in fluid communication with the plurality of first passages 469 of the first connecting plate 461. The aggregate filtering device 464 is provided with a plurality of small aggregate filtering holes (not shown) through which the adhered aggregates 22 removed from the surface 20 of the gas conveying device 2 can be collected and saved in the aggregate collecting cavity 466a and filtered clean gas can be allowed to enter into an air exhaust cavity 466b located below the aggregate filtering device 464. The air exhaust cavity 466b as shown is defined and formed by the second connecting plate 465, a part of the connecting structure 463 and the aggregate filtering device 46. A plurality of gas passages 468 of the second connecting plate 465 enable the air exhaust cavity 466b to be in fluid communication with the air exhaust area 87 inside the reaction chamber 1. A suction port 86 is provided in the bottom portion or the side wall of the reaction chamber 1 such as to be in fluid communication with the inside of the reaction chamber 1, and is connected to an air exhaust device 89 (for example, an air exhaust pump or a blower).
As shown in
The above said aggregate collecting device 464 may be embodied in various forms. A preferred embodiment is a filtering screen with fine and close filtering holes. The aggregate collecting device 464 may be fixedly connected to the connecting structure 463 or the first connecting plate 461, or may be detachably mounted on the connecting structure 463 or the first connecting plate 461. After the cleaning process is performed for a period of time, the aggregate collecting device 464 may be demounted and replaced by a new aggregate collecting device 464 for the next cleaning process. For example, in the embodiment as shown in
Also, the above said aggregate collecting device 564 may be embodied in various forms. A preferred embodiment is a filtering screen with fine and close filtering holes. The aggregate collecting device 564 may be fixedly connected to the connecting structure 563 or the first connecting plate 561, or may be detachably mounted on the connecting structure 563 or the first connecting plate 561. After the cleaning process is performed for a period of time, the aggregate collecting device 564 may be demounted and replaced by a new aggregate collecting device 564 for the next cleaning process.
It should be understood that, the gas conveying device in the present application may be of any type. For example, the above gas conveying devices 2 as shown are all a gas distribution showerhead device having a generally flat gas conveying surface 20, and are provided therein with multiple small closely-distributed gas distribution holes. The gas conveying devices 2 in the present application may also be an injector-type gas dispersing device as shown in
As described above, the cleaning device according to the present application may be embodied in various forms. In a preferred embodiment, the cleaning device is a dummy of a substrate carrier. The connecting portion between the cleaning device and the supporting device has the same structure and size as those of the connecting portion between the substrate carrier and the supporting device. Taking the cleaning device 6 in
The mechanical conveying device T as shown is only illustrative, and may be a substrate transfer chamber connected to the reaction chamber 1. The above conveying robot may be provided inside the substrate transfer chamber. Of course, the mechanical conveying device T may also be configured in other forms, for example, a single robot conveying device.
It should be understood that, in the embodiments and implementations as shown in the above
Based on the above essence and spirit of the present application, the present application further provides a method for cleaning a gas conveying device 2 in a film growth reaction chamber 1, wherein the gas conveying device 2 includes a gas conveying surface 20 for releasing reaction gases into the reaction chamber 1, and a supporting device 3 is provided in the reaction chamber 1. The method includes:
a) providing a cleaning device 6 and detachably mounting the cleaning device 6 on the supporting device 3, wherein the cleaning device 6 includes a surface 61 facing the gas conveying surface 20 and provided with a plurality of scraping structures 62 thereon; and
b) adjusting position of the cleaning device 6 (for example, the height position or the horizontal position), such that the scraping structures 62 may at least partially contact with the gas conveying surface 20 of the gas conveying device 2; and rotating the cleaning device 6, such that the scraping structures 62 contact with the gas conveying surface 20 and remove the adhered aggregates adhered to the gas conveying surface 20.
Optionally, the above method further includes: providing a rotary driving device 5a connected to the supporting device 3; starting the rotary driving device 5a to drive the supporting device 3 and the cleaning device 6 to rotate together.
Optionally, the above step b) further includes: providing a suction port in fluid communication with the inside of the reaction chamber, wherein the suction port is connected to an air exhaust pump or a blower for suctioning the adhered aggregates into an aggregate collecting device or suctioning the adhered aggregates out of the reaction chamber.
The suction port may be provided in various locations as needed. For example, as shown in
Preferably, the above supporting device 3 also acts as a supporting device for loading the substrate carrier 8 inside the reaction chamber 1. The substrate carrier 8 in the reaction chamber 1 is configured to convey and support the substrate 8a. The substrate carrier 8 is detachably mounted on the supporting device 3 and contacts with the supporting device 3 at least during the film growth process performed in the reaction chamber 1. The substrate carrier 8 can be easily removed from the supporting device 3 so as to be conveyed for loading or unloading the substrate 8a.
Preferably, during the process of step b), inert gases or other gases (such as H2) may be blown into the reaction chamber 1 via the gas conveying surface 20 of the gas conveying device 2 to blow the adhered aggregates 20 into a proper space.
Preferably, an aggregate collecting device in fluid communication with the suction port is provided inside the above cleaning device so as to collect the adhered aggregates. The specific implementation may refer to the cleaning device illustrated in
Preferably, during the process of implementing the above methods, the reaction chamber cover of the reaction chamber remains in a closed state.
Based on the essence and spirit of the present application, there is further provided in the present application a method for film growth in a reaction chamber, wherein a supporting device having a supporting end or a supporting surface is provided in the reaction chamber. The method includes:
a) providing a substrate carrier on which one or more substrates is loaded;
b) moving the substrate carrier into the reaction chamber and detachably mounting the substrate carrier on the supporting end or the supporting surface of the supporting device;
c) releasing reaction gases into the reaction chamber through a gas conveying surface of a gas conveying device, and rotating the supporting device and the substrate carrier for the film growth on the substrate;
d) stopping step c), detaching the substrate carrier from the supporting end or the supporting surface of the supporting device and moving the substrate carrier out of the reaction chamber;
e) providing a cleaning device and moving the cleaning device into the reaction chamber, and detachably mounting the cleaning device on the supporting end or the supporting surface of the supporting device, wherein the cleaning device includes a surface facing the gas conveying surface and provided with a plurality of scraping structures;
f) adjusting position of the cleaning device such that the plurality of scraping structures may at least partially contact with the gas conveying surface;
g) rotating the supporting device and the cleaning device, such that the plurality of scraping structures at least partially contact with the gas conveying surface and remove the adhered aggregates adhered to the gas conveying surface; and
h) stopping step g), detaching the cleaning device from the supporting end or the supporting surface of the supporting device and moving the cleaning device out of the reaction chamber.
Preferably, the above step g) further includes the step of providing a suction port in fluid communication with the inside of the reaction chamber, wherein the suction port is connected to an air exhaust pump or a blower.
Preferably, the above method further includes the step of providing an aggregate collecting device in connection with the suction port, wherein the aggregate collecting device is configured to collect the adhered aggregates.
Preferably, an aggregate collecting device in fluid communication with the suction port is provided in the cleaning device to collect the adhered aggregates.
Preferably, during the process of implementing the above method, the reaction chamber cover of the reaction chamber remains in a closed state.
According to the essence and the spirit of the present application, the above device and method according to the present application may be further broadened and varied to provide a method and device for removing the adhered aggregates on the inner surface of the film growth reaction chamber. As shown in
When the device 700 is used to clean the adhered aggregates on the inner surface of the film growth reaction chamber 1, the method includes:
a) providing a cleaning device 760 into the reaction chamber 1 and detachably mounting the cleaning device 760 on the supporting device 3, wherein the cleaning device 760 includes one or more surfaces 762, 763 facing the inner surfaces 20, 12c of the reaction chamber 1, and the surfaces 762, 763 are provided with a plurality of scraping structures 762a, 762b thereon; and
b) adjusting position of the cleaning device 760, such that the scraping structures 762a, 762b may at least partially contact with the inner surfaces 20, 12c of the reaction chamber, and rotating the cleaning device 760, such that the scraping structures 762a, 762b contact with the inner surfaces 20, 12c of the reaction chamber and remove the adhered aggregates 22 adhered to the inner surfaces 20, 12c of the reaction chamber.
Optionally, the above method further includes the step of adjusting a vertical height of the cleaning device 760 in the reaction chamber 1 while rotating the cleaning device 760, such that the scraping structures 762b of the cleaning device 760 may move up and down along the side wall 12c and contact with the side wall 12c so as to remove all the adhered aggregates on the side wall 12c.
Optionally, the above method further includes: providing a suction port 86 in fluid communication with the inside of the reaction chamber, wherein the suction port 86 is connected to an air exhaust pump or a blower 89; and operating the air exhaust pump or the blower 89 to perform a suction function.
Optionally, the above method further includes the step of providing an aggregate collecting device (not shown) in fluid communication with the suction port 86, wherein the aggregate collecting device is configured to collect the adhered aggregates.
Optionally, an aggregate collecting device (not shown) in fluid communication with the suction port 86 is provided inside the cleaning device 76, and the aggregate collecting device is configured to collect the adhered aggregates.
The reaction chamber 1 in the above various devices may be various types of reaction chamber, including but not limited to, a vertical reaction chamber, a horizontal reaction chamber, a planetary reaction chamber, a vertical spray-type reaction chamber and a high-speed rotary disc reaction chamber.
The device and method provided by the present application are applicable to any film growth processes, including but not limited to, an MOCVD process and an HVPE process for growing epitaxial layer on the substrate, e.g., for group III and group V element compound film growth.
It should be understood that, the “reaction gas” mentioned in the present application is not limited to one kind of gas, but also includes a mixed gas of various gases.
Compared with the prior art, the reaction device and the cleaning method provided by the present application have some advantages. For example, the whole process for cleaning or removing the adhered aggregates on the surface of the gas conveying device or the inner surface of the film growth reaction chamber may be performed without the need of opening the reaction chamber cover, and thus it is an in-situ cleaning method. The whole process may be realized automatically. Furthermore, the cleaning method is simple, convenient, and may ensure the quality and consistency of cleaning process so as to avoid having adverse effects on the subsequent film growth. In general, the producer's cost is greatly reduced and the effective processing uptime of the whole film growth device is greatly improved.
The various embodiments of the present application are described in detail hereinabove. It should be noted that, the above embodiments are only illustrative, and are not limit the present application. Any technical solution, without departing from the spirit of the present application, is deemed to fall into the protection scope of the present application. In addition, any reference number in the claims should not be construed as a limitation to the claims. The term “include” does not exclude other devices or steps not listed in the claims or the specification; and the terms “first” and “second” and the like are only used to indicate the name, and do not indicate any specific order.
Number | Date | Country | Kind |
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201110073624.2 | Mar 2011 | CN | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/CN12/72873 | 3/23/2012 | WO | 00 | 9/6/2013 |