Claims
- 1. A method for continuously manufacturing a semiconductor device in a plurality of glow discharge regions on a belt-shaped substrate of magnetic material, comprising the steps of:
- connecting a plurality of the glow discharge regions via a gas gate and arranging the belt-shaped substrate of magnetic material along a path sequentially penetrating the glow discharge regions;
- supporting a substrate on a plurality of rotatable rollers, disposed into slit-shaped separating passages of the gas gates, by a magnetic force so as to support the back side of the belt-shaped substrate while rotating the rollers, and continuously conveying the belt-shaped substrate in a longitudinal direction;
- varying a width of the magnetic field exerted between the rollers and the belt-shaped substrate upon conveyance of the belt-shaped substrate to a value which is equal to or less than 1/2 of a maximum value of the magnetic force.
- 2. A method according to claim 1, wherein a groove is formed on the roller.
- 3. A method according to claim 1, further comprising
- a glow discharge region constituting a semiconductor species of a first conductivity type, such that, a region constituting a semiconductor of a i conductivity type, and a region constituting a semiconductor of a second conductivity type opposite to the first one are sequentially provided.
- 4. A method according to claim 1, further comprising
- a glow discharge region constituting a semiconductor species of a first conductivity type, such that, a region constituting a second semiconductor of i-conductivity type, a region constituting a third semiconductor of a second conductivity type opposite to the first one, a region of a fourth semiconductor of the first conductivity type, a region constituting fifth semiconductor of i-conductivity type, and a region of sixth semiconductor of the second conductivity type are provided sequentially.
- 5. A method according to claim 1, further comprising
- a glow discharge region constituting a semiconductor species of a first conductivity type, such that, a region constituting a second semiconductor of i-conductivity type, a region of a third semiconductor of a second conductivity type opposite to the first conductivity type, a region constituting a fourth semiconductor of the first conductivity type, a region of a fifth semiconductor of i-conductivity type, a region constituting a sixth semiconductor of the second conductivity type, a region constituting a seventh semiconductor of the first conductivity type, a region constituting the i-conductivity type, and a region of ninth semiconductor of the second conductivity type are provided sequentially.
- 6. A method according to claim 1, wherein said step for varying the width of the magnetic force exerted between the rollers and the belt-shaped substrate to the value equal to or less than 1/2 of the maximum value of the magnetic force is performed by fixing a magnet at a fixing axis of the roller.
- 7. A method according to claim 1, wherein said step for varying the width of the magnetic force exerted between the rollers and the belt-shaped substrate to the value equal to or less than 1/2 of the maximum value of the magnetic force is performed by arranging a magnet at a back side surface of a fixed roller of the smaller diameter.
Priority Claims (1)
Number |
Date |
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Kind |
3-087420 |
Mar 1991 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/858,410 filed Mar. 27, 1992, U.S. Pat. No. 5,266,116.
US Referenced Citations (7)
Divisions (1)
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Number |
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858410 |
Mar 1992 |
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