Claims
- 1. A silicon wafer having a plurality of metal oxide semiconductor field effect transistor (MOSFET) devices, wherein at least one of said devices comprises:at least one useful bipolar junction transistor (BJT) created from parasitic BJTs formed during a manufacture of the MOSFET devices, the useful BJT being electrically connected to a circuit element wherein selective ones of the parasitic BJTs are made useful by increasing a beta by selectively altering any manufacturing process designed to minimize the beta of the selected parasitic BJTs.
- 2. The device of claim 1, wherein the MOSFET device is a silicon-on-insulation (SOI) MOSFET.
- 3. The device of claim 1, wherein the MOSFET is a bulk-type MOSFET with a channel and a substrate and further comprising a well for isolating the channel from the substrate.
CROSS REFERENCE TO RELATED APPLICATION(S)
This is a continuation of application Ser. No. 09/553,723 filed on Apr. 20, 2000, now U.S. Pat. No. 6,380,022 which is hereby incorporated by reference herein.
US Referenced Citations (10)
Non-Patent Literature Citations (1)
Entry |
United Kingdom Search Report dated Feb. 15, 2002. |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/553723 |
Apr 2000 |
US |
Child |
10/079531 |
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US |