Claims
- 1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulator film on a semiconductor substrate,
- forming a barrier metal film on said insulator film,
- forming a tungsten film on said barrier metal film,
- forming a resist film with a pattern on said tungsten film, and
- selectively etching said tungsten film to expose said barrier metal film, by a mixed gas containing at least fluoride gas and nitrogen gas, using said resist film as a mask, a flow of said nitrogen gas being more than 25% of a flow of said fluoride gas.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-296495 |
Nov 1993 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/345,839 filed on Nov. 28, 1994, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
234920 |
Feb 1990 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
345839 |
Nov 1994 |
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