Claims
- 1. A method for fabricating a polycrystalline silicon resistor comprising the steps of:
- forming a dielectric film on a substrate;
- forming a polycrystalline silicon film on said dielectric film;
- ion-implanting first atoms which do not determine conductivity type into said polycrystalline silicon film without making a surface of said polycrystalline silicon film, which does not contact said dielectric film, amorphous;
- applying a first heat treatment to said polycrystalline silicon film which contains said first atoms which do not determine conductivity type, to substantially increase the uniformity of distribution of said first atoms in said polycrystalline silicon film and to substantially increase the crystal grain size and uniformity of said polycrystalline silicon film;
- applying second atoms which determine conductivity type into said polycrystalline silicon film which said heat treatment is applied to; and
- applying a second heat treatment to said polycrystalline silicon film which contains said second atoms to substantially increase the uniformity of distribution of said second atoms in said polycrystalline silicon film and
- wherein said polycrystalline silicon film is patterned and used as a resistor on said dielectric film.
- 2. The method of claim 1, wherein said second atoms are applied without making the surface of said polycrystalline silicon film, which does not contact said dielectric film, amorphous.
- 3. The method of claim 1, wherein said first atoms are of silicon or the inert elements.
- 4. The method for claim 1, wherein said first heat treatment is applied at temperature in the range 800.degree.-1000.degree. C., for about 30 minutes.
- 5. The method of claim 1, wherein said second heat treatment is applied at temperature in the range 800.degree.-1000.degree. C. for about 30 minutes.
Priority Claims (2)
Number |
Date |
Country |
Kind |
61-299436 |
Dec 1986 |
JPX |
|
61-299437 |
Dec 1986 |
JPX |
|
Parent Case Info
This application is a continuation of now abandoned application, Ser. No. 07/131,739 filed on Dec. 11, 1987, now abandoned.
US Referenced Citations (4)
Continuations (1)
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Number |
Date |
Country |
Parent |
131739 |
Dec 1987 |
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