Doping polycristalline - or amorphous silicon layers

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H01L21/32155

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/32155Doping polycristalline - or amorphous silicon layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and a manufacturing method thereof
- Patent number 12,166,133
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qiang Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit using a patterned mask layer
- Patent number 12,027,370
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 12,029,032
- Issue date Jul 2, 2024
- Micron Technology, Inc.
- Justin B. Dorhout
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon implantation for thicker gate silicide
- Patent number 12,020,937
- Issue date Jun 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method used in forming a memory array comprising strings of memory...
- Patent number 11,974,429
- Issue date Apr 30, 2024
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,955,533
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including buried gate structure and method for...
- Patent number 11,943,912
- Issue date Mar 26, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device including a doped gate electrode
- Patent number 11,908,916
- Issue date Feb 20, 2024
- SK HYNIX SYSTEM IC INC.
- Soon Yeol Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced ESR in trench capacitor
- Patent number 11,888,021
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure formation method and mask
- Patent number 11,810,787
- Issue date Nov 7, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor devices
- Patent number 11,800,701
- Issue date Oct 24, 2023
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,784,051
- Issue date Oct 10, 2023
- SK Hynix Inc.
- Young-Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 11,721,544
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and manufacturing method thereof
- Patent number 11,715,739
- Issue date Aug 1, 2023
- Samsung Display Co., Ltd.
- Jong Oh Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including polycrystalline resistor with dopant-including...
- Patent number 11,637,173
- Issue date Apr 25, 2023
- GLOBALFOUNDRIES U.S. INC.
- Yves T. Ngu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,631,684
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Justin B. Dorhout
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit using a patterned mask layer
- Patent number 11,462,408
- Issue date Oct 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor devices
- Patent number 11,430,794
- Issue date Aug 30, 2022
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to reduce nanosheet gate length variation
- Patent number 11,430,877
- Issue date Aug 30, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip and method of forming thereof
- Patent number 11,424,339
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays comprising strings of memory cells and methods used i...
- Patent number 11,404,436
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,404,326
- Issue date Aug 2, 2022
- SK Hynix Inc.
- Keon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell and solar cell module
- Patent number 11,398,574
- Issue date Jul 26, 2022
- Panasonic Holdings Corporation
- Kazunori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including buried gate structure and method for...
- Patent number 11,393,824
- Issue date Jul 19, 2022
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices
- Patent number 11,393,844
- Issue date Jul 19, 2022
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped passivated contacts
- Patent number 11,362,221
- Issue date Jun 14, 2022
- Alliance for Sustainable Energy, LLC
- David Levi Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact and manufacturing method thereof
- Patent number 11,335,562
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bang-Tai Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having physically unclonable function, method for manufactur...
- Patent number 11,309,262
- Issue date Apr 19, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dong Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Trench capacitor with warpage reduction
- Patent number 11,271,072
- Issue date Mar 8, 2022
- Texas Instruments Incorporated
- Jiao Jia
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW CONCENTRATION OPPOSITE TYPE DOPING DR...
- Publication number 20240363720
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20240315018
- Publication date Sep 19, 2024
- Micron Technology, Inc.
- Justin B. Dorhout
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MOSFET AND SEMICONDUCTOR DEVICE
- Publication number 20240290784
- Publication date Aug 29, 2024
- Rohm Co., Ltd.
- Takeshi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array And Method Used In Forming A Memory Array Comprising S...
- Publication number 20240244840
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED ESR IN TRENCH CAPACITOR
- Publication number 20240120368
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20240105465
- Publication date Mar 28, 2024
- Kokusai Electric Corporation
- Takahiro MIYAKURA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLASMA-DOPED TRENCHES FOR MEMORY
- Publication number 20240105510
- Publication date Mar 28, 2024
- Micron Technology, Inc.
- Yiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
- Publication number 20230377873
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS FOR THE SAME
- Publication number 20230238435
- Publication date Jul 27, 2023
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- YAJIE CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20230209822
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Justin B. Dorhout
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE OF NAND FLASH
- Publication number 20230170392
- Publication date Jun 1, 2023
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Pengkai Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING CONTACT STRUCTURE AND CONTACT STRUCTURE
- Publication number 20230138089
- Publication date May 4, 2023
- Changxin Memory Technologies, Inc.
- Xin XIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming An Integrated Circuit Priority Claim
- Publication number 20220375752
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20220359533
- Publication date Nov 10, 2022
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220359723
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20220328519
- Publication date Oct 13, 2022
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BURIED GATE STRUCTURE AND METHOD FOR...
- Publication number 20220320102
- Publication date Oct 6, 2022
- SK HYNIX INC.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
- Publication number 20220157595
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
- Publication number 20220157968
- Publication date May 19, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220157847
- Publication date May 19, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array And Method Used In Forming A Memory Array Comprising S...
- Publication number 20220149066
- Publication date May 12, 2022
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHIP AND METHOD OF FORMING THEREOF
- Publication number 20220130975
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20220115384
- Publication date Apr 14, 2022
- SAMSUNG ELECTRONICS CO,. LTD.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING POLYCRYSTALLINE RESISTOR WITH DOPANT-INCLUDING...
- Publication number 20220102480
- Publication date Mar 31, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yves T. Ngu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220093619
- Publication date Mar 24, 2022
- WINBOND ELECTRONICS CORP.
- Wen-Chieh TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220013363
- Publication date Jan 13, 2022
- SK hynix Inc.
- Young-Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20210384216
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210358815
- Publication date Nov 18, 2021
- SK HYNIX INC.
- Keon YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20210320121
- Publication date Oct 14, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Linchun WU
- H01 - BASIC ELECTRIC ELEMENTS

Doping polycristalline - or amorphous silicon layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and a manufacturing method thereof

Three-dimensional memory devices and methods for forming the same

Method of forming an integrated circuit using a patterned mask layer

Integrated assemblies and methods of forming integrated assemblies

Carbon implantation for thicker gate silicide

Method used in forming a memory array comprising strings of memory...

Ion implantation to reduce nanosheet gate length variation

Semiconductor device including buried gate structure and method for...

High voltage semiconductor device including a doped gate electrode

Reduced ESR in trench capacitor

Semiconductor structure formation method and mask

Method for fabricating semiconductor devices

Semiconductor device and method for fabricating the same

Cut metal gate process for reducing transistor spacing

Display device and manufacturing method thereof

Structure including polycrystalline resistor with dopant-including...

Integrated assemblies and methods of forming integrated assemblies

Method of forming an integrated circuit using a patterned mask layer

Method for fabricating semiconductor devices

Ion implantation to reduce nanosheet gate length variation

Integrated chip and method of forming thereof

Memory arrays comprising strings of memory cells and methods used i...

Semiconductor device and method for fabricating the same

Solar cell and solar cell module

Semiconductor device including buried gate structure and method for...

Methods for forming three-dimensional memory devices

Doped passivated contacts

Self-aligned contact and manufacturing method thereof

Device having physically unclonable function, method for manufactur...

Trench capacitor with warpage reduction

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH LOW CONCENTRATION OPPOSITE TYPE DOPING DR...

Integrated Assemblies and Methods of Forming Integrated Assemblies

ENHANCEMENT MOSFET AND SEMICONDUCTOR DEVICE

Memory Array And Method Used In Forming A Memory Array Comprising S...

REDUCED ESR IN TRENCH CAPACITOR

METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...

PLASMA-DOPED TRENCHES FOR MEMORY

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS FOR THE SAME

Integrated Assemblies and Methods of Forming Integrated Assemblies

METHOD FOR MANUFACTURING GATE OF NAND FLASH

METHOD FOR FABRICATING CONTACT STRUCTURE AND CONTACT STRUCTURE

Method Of Forming An Integrated Circuit Priority Claim

METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

SEMICONDUCTOR DEVICE INCLUDING BURIED GATE STRUCTURE AND METHOD FOR...

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

Memory Array And Method Used In Forming A Memory Array Comprising S...

INTEGRATED CHIP AND METHOD OF FORMING THEREOF

METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

STRUCTURE INCLUDING POLYCRYSTALLINE RESISTOR WITH DOPANT-INCLUDING...

MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES