Claims
- 1. A method for fabricating a semiconductor device, comprising the steps of:
- forming a first wiring on an insulating film surface of a semiconductor substrate;
- forming an insulating layer on said first wiring;
- forming a spin-on-glass film on said insulating layer;
- partly etching said spin-on-glass film so as to remove said spin-on-glass film formed on said insulating layer in a region above said first wiring;
- forming a further insulating layer on said spin-on-glass film;
- forming a via-hole through said further insulating layer and said insulating layer to expose said first wiring;
- connecting a second wiring to said first wiring through said via-hole; and
- forming on said second wiring and on said further insulating film, an insulating layer of fluorine contained silicon oxynitride by chemical vapor deposition process using fluoroalkoxysilane gas containing nitrogen atoms, and gas containing oxygen atoms,
- while substrate temperature does not exceed 200.degree. C.
- 2. The method as defined in claim 1, wherein:
- said gas containing nitrogen atoms is one of N.sub.2 gas, N.sub.2 O gas or NH.sub.3 gas.
- 3. The method as defined in claim 1 wherein:
- said gas containing oxygen atoms is one of O.sub.2 gas, steam, or O.sub.3 gas.
- 4. The method as defined in claim 1, wherein:
- said chemical vapor deposition process is one of thermal-chemical vapor deposition process, plasma chemical vapor deposition process, photo-chemical vapor deposits on process, or chemical vapor deposition process using electron cyclotron resonance.
- 5. A method for fabricating a semiconductor device, comprising the steps of:
- forming a first wiring on an insulating film surface of a semiconductor substrate;
- forming an insulating layer of fluorine contained silicon oxynitride on said insulating film surface of said semiconductor substrate to insulate said first wiring;
- forming a via-hole through said insulating layer to expose said first wiring;
- connecting a second wiring to said first wiring through said via-hole; and
- forming on said insulating layer a surface protective film of fluorine contained silicon oxynitride by chemical vapor deposition process using fluoroalkoxysilane gas containing nitrogen atoms, and gas containing oxygen atoms, to cover said wiring
- while substrate temperature does not exceed 200.degree. C.
- 6. The method as defined in claim 5, wherein:
- said gas containing nitrogen atoms is one of N.sub.2 gas, N.sub.2 O gas or NH.sub.3 gas.
- 7. The method as defined in claim 5, wherein:
- said gas containing oxygen atoms is one of O.sub.2 gas, steam, or O.sub.3 gas.
- 8. The method as defined in claim 5, wherein:
- said chemical vapor deposition process is one of thermal-chemical vapor deposition process, plasma chemical vapor deposition process, photo-chemical vapor deposition process, or chemical vapor deposition process using electron cyclotron resonance.
- 9. A method for fabricating a semiconductor device, comprising the steps of:
- forming a lower level wiring on an insulating film surface of a semiconductor substrate;
- forming an interlayer insulating film of a fluorine contained silicon oxynitride on said insulating film surface of said semiconductor substrate to insulate said lower level wiring;
- forming a via-hole through said interlayer insulating film to expose said lower level wiring;
- forming an upper level wiring on said interlayer insulating film so as to connect said upper layer wiring to said lower level wiring through said via-hole;
- forming a silicon nitride film on said interlayer insulating film so as to cover said upper level wiring, said silicon nitride film being a part of a surface protective film; and
- forming on said silicon nitride film a film of fluorine contained silicon oxynitride to form a remaining part of said surface protective film by chemical vapor deposition process using fluoroalkoxysilane gas containing nitrogen atoms, and gas containing oxygen atom,
- while substrate temperature does dot exceed 200.degree. C.
- 10. The method as defined in claim 9, wherein:
- said gas containing nitrogen atoms is one of N.sub.2 gas, N.sub.2 O gas or NH.sub.3 gas.
- 11. The method as defined in claim 9, wherein:
- said gas containing oxygen atoms is one of O.sub.2 gas, steam, or O.sub.3 gas.
- 12. The method as defined in claim 9, wherein:
- said chemical vapor deposition process is one of thermal-chemical vapor deposition process, plasma chemical vapor deposition process, photo-chemical vapor deposition process, or chemical vapor deposition process using electron cyclotron resonance.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-312417 |
Dec 1993 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/355,625, filed Dec. 14, 1994, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
38581 |
Feb 1991 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
355625 |
Dec 1994 |
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