Claims
- 1. A method of forming an integrated circuit capacitor, the method comprising the steps of:
- forming a storage node electrode;
- depositing a dielectric layer over the storage node electrode;
- performing an O.sub.2 plasma anneal after depositing the dielectric layer;
- performing an ozone anneal after performing the O.sub.2 plasma anneal; and
- depositing a top electrode over the dielectric layer.
- 2. The method of claim 1 wherein the step of forming a storage node electrode comprises forming a silicon storage node electrode.
- 3. The method of claim 1 wherein the step of forming a storage node electrode comprises forming a metal storage node electrode.
- 4. The method of claim 1 wherein the step of forming a storage node electrode comprises forming a ceramic storage node electrode.
- 5. The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a tantalum pentoxide layer.
- 6. The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a lead zirconium titanate layer.
- 7. The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a barium strontium titanate layer.
- 8. The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a strontium titanate layer.
- 9. The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a high dielectric constant material.
- 10. The method of claim 1 wherein the step of depositing a dielectric layer comprises depositing a dielectric derived from a material organic source.
- 11. The method of claim 1 wherein the ozone anneal is performed in the presence of ultra violet light irradiation.
- 12. The method of claim 1 wherein the ozone anneal is performed without ultra violet light irradiation.
- 13. The method of claim 1 and further comprising the step of performing a crystallization anneal prior to the step of performing an ozone anneal.
Parent Case Info
This is a Non Provisional application filed under 35 USC 119(e) and claims priority of prior provisional, Ser. No. 60/036,481 of inventor Tsu, et al., filed Jan. 31, 1997.
US Referenced Citations (8)