Claims
- 1. A method for fabricating a charge coupled device comprising the steps of:
- forming a first provisional oxide film on a semiconductor substrate;
- forming a first gate oxide film after selectively etching away said first provisional oxide film at a first layer transfer electrode formation region;
- forming selectively a first layer transfer electrode from a polycrystalline silicon film on said first gate oxide film of said first layer transfer electrode formation region;
- etching away an oxide film formed of said first provisional oxide film and said first gate oxide film between said first layer transfer electrodes;
- forming a second provisional oxide film on said semiconductor substrate;
- forming a second gate oxide film after selectively etching away said second provisional oxide film at a second layer transfer electrode formation region on said semiconductor substrate; and
- forming selectively a second layer transfer electrode from a polycrystalline silicon film on said second gate oxide film of said second layer transfer electrode formation region.
- 2. The method for fabricating a charge coupled device according to claim 1, in which a silicon substrate is used as said semiconductor substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-292864 |
Nov 1994 |
JPX |
|
Parent Case Info
This is a Continuation of application Ser. No. 08/562,992 filed Nov. 27, 1995.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
2-189937 |
Jul 1990 |
JPX |
2-292834 |
Dec 1990 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
562992 |
Nov 1995 |
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