Claims
- 1. A method for fabricating a substrate, said method comprising:providing a first substrate having a substantially planar surface, said first substrate being of a first substrate type and comprising a silicon substrate; implanting particles into said substantially planar surface to a selected depth to define a volume of implanted material within said first substrate; contacting a face of a second substrate against said substantially planar implanted surface, said contacting bonding said face to said substantially planar surface; wherein said implanted material provides a compliant silicon layer for embedding a surface non-uniformity into said compliant layer to facilitate bonding of said face to said substantially planar surface.
- 2. The method of claim 1 wherein said volume of implanted material has an amorphous characteristic from said selected depth to said substantially planar surface.
- 3. The method of claim 1 wherein said second substrate comprises a silicon substrate.
- 4. The method of claim 1 wherein said volume comprises a depth of about 1000 Angstroms and less.
- 5. The method of claim 1 wherein said particles comprise silicon bearing ions.
- 6. The method of claim 1 further comprising a step of annealing said contacted first substrate and said second substrate to further attach said face to said substantially planar surface.
- 7. The method of claim 6 wherein said annealing is maintained at a temperature of less than about 200 degrees Celsius.
- 8. The method of claim 6 wherein said annealing is maintained at a temperature of less than about 100 degrees Celsius.
- 9. The method of claim 1 wherein said substantially planar surface comprises an average surface roughness in the range of 10 angstroms and less.
- 10. The method of claim 1 wherein said implanted substantially planar surface comprises an average surface roughness in the range of 10 angstroms and less.
- 11. The method of claim 1 further comprising immersing said implanted first substrate in a cleaning solution.
- 12. The method of claim 11 wherein said cleaning solution comprises an SC1 fluid.
- 13. The method of claim 11 wherein said cleaning solution comprises an SC2 fluid.
- 14. The method of claim 13 wherein said SC2 fluid comprises a dilute solution of NH4OH.
- 15. The method of claim 14 wherein said dilute solution is about a 1/500 part dilution of NH4OH.
- 16. The method of claim 1 further comprising plasma cleaning said implanted substantially planar surface.
- 17. The method of claim 1 further comprising plasma cleaning said face of said second substrate.
- 18. The method of claim 1 further comprising implanting said face of said second substrate to form a volume of compliant material before said contacting.
- 19. A method for forming a silicon-on-silicon substrate, said method comprising:providing a first silicon substrate having a substantially planar surface; implanting a plurality of particles into said substantially planar surface to a selected depth to define a volume within said substrate, said volume comprising an amorphous silicon material that has a compliant characteristic; attaching a face of a second silicon substrate against said substantially planar surface to form a multi-layered substrate; and annealing said multi-layered substrate at a temperature of less than about 200 degrees Celsius to substantially bond said second silicon substrate to said first silicon substrate.
- 20. The method of claim 19 wherein said annealing re-crystallizing a portion of said volume of said amorphous silicon material.
- 21. The method of claim 19 wherein said implanted substantially planar surface comprises an average surface roughness of 1 angstrom and less.
- 22. The method of claim 19 wherein said implanted substantially planar surface comprises a plurality of an imperfections, said imperfections comprising a hillock.
- 23. A method for forming silicon-on-silicon epi-like substrates, said method comprising:providing a first silicon substrate having a substantially planar surface; implanting a plurality of particles into said substantially planar surface to a selected depth to define a volume within said substrate; and attaching a face of a second silicon substrate against said substantially planar surface to form an epi-like multi-layered substrate.
- 24. The method of claim 23 further comprising annealing said epi-like multi-layered substrate at a temperature of less than about 200 degrees Celsius to substantially bond said second silicon substrate to said first silicon substrate.
- 25. The method of claim 23 wherein said volume comprises an amorphous silicon material that has a compliant characteristic.
CROSS REFERENCE TO RELATED APPLICATIONS
This present application claims priority to U.S. Provisional Application No. 60/115,178 filed Jan. 8, 1999, commonly assigned and hereby incorporated by reference for all purposes.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/115178 |
Jan 1999 |
US |