A plurality of bit line contact plugs 53 connected to a lower layer penetrating the first insulation layer 52 are formed. The lower layer connected to the bit line contact plugs 53 can be a source or a drain of the transistor. The bit line contact plugs 53 include a conductive material such as polysilicon.
A conductive layer is formed. Then, the conductive layer is patterned to form a plurality of bit lines 54 connected to the bit line contact plugs 53 in a cell region and a fuse line 54A in a peripheral region.
A second insulation layer 55 is formed over the above resultant structure including the bit lines 54 and the fuse line 54A. The second insulation layer 55 includes a silicon oxide layer as an inter-layer insulation material.
A plurality of storage node contact plugs 56 penetrating the second insulation layer 55 of the cell region are formed. The storage node contact plugs 56 serve a role in connecting the lower layer to subsequent capacitors. The storage node contact plugs 56 include a conductive material such as polysilicon.
A plurality of bottom electrodes 57 connected to the storage node contact plugs 56 of the cell region are formed. A dielectric layer 58 and a top electrode 59 are formed over the bottom electrodes 57. A conductive layer forming the top electrode 59 is patterned over the second insulation layer 55 of the peripheral area to be overlapped with the fuse line 54A. As a result, a first patterned conductive layer 59A is obtained, and a line width of the first patterned conductive layer 59A is greater than that of the fuse line 54A. The first patterned conductive layer 59A serves a role of an etch stop during a repair etching process performed to form a subsequent fuse box. The first patterned conductive layer 59A can include a metal-based thin film.
A third insulation layer 60 is formed over the above resultant structure. The third insulation layer 60 includes a silicon oxide layer to serve a role of inter-layer insulation against a subsequent metal line.
As shown in
A first metal line 62 connected to the metal contact plug 61 is formed. A fourth insulation layer 63 is formed over the first metal line 62. The fourth insulation layer 63 includes an inter-metal dielectric layer to serve a role of inter-layer insulation between metal lines.
A second metal line 64 is formed over the fourth insulation layer 63. A passivation layer 65 is formed over an entire surface of the fourth insulation layer 63 including the second metal line 64.
As shown in
As shown in
As described above, when the top electrode of the capacitor is formed in the cell region, the conductive layer forming the top electrode is also patterned over the fuse line of the peripheral region. During performing the repair etching process, the patterned conductive layer serves a role of the etch stop. Then, the patterned conductive layer, the dielectric layer beneath the patterned conductive layer, and the second insulation layer are etched to form a fuse box. Since a thickness of a layer subjected to a second repair etching process is smaller than that of a typical layer subjected to an etching process. Accordingly, a thickness of the insulation layer remaining over the fuse box can be uniformly formed.
According to this embodiment of the present invention, the insulation layer can be formed over an upper portion of the fuse line to a uniform thickness. As a result, those limitations associated with the process can be overcome in advance and accordingly, yield of devices can be improved.
While the present invention has been described with respect to the specific embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
Number | Date | Country | Kind |
---|---|---|---|
2006-0059254 | Jun 2006 | KR | national |
2006-0124738 | Dec 2006 | KR | national |