Method for forming a capacitor structure and a capacitor structure

Abstract

A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads;

Description

DESCRIPTION OF THE DRAWINGS

In the figures:

FIGS. 1 to 15 are local sections for illustrating gradually a method for forming a capacitor structure according to a first embodiment.

FIGS. 16 to 24 are local sections for illustrating gradually a method for forming a capacitor structure according to a second embodiment.

FIG. 25 is a local section for illustrating gradually a method for forming a capacitor structure according to a third embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Identical reference signs in the FIGS. 1 to 24 designate identical or similar elements.

A first embodiment of the present invention will be illustrated along with FIGS. 1 to 15.

A substrate 1 is provided, e.g. a semiconductor substrate, in which a plurality of electronic circuits may be enclosed. These electronic circuits can be contacted via the contact pads 2, which are provided on a surface 101 of the substrate 1, silicon nitride layer 3 or any other etch stop or protective layer may coat the substrate surface 101.

In a first step a dielectric mold 10 is formed on the substrate surface 101. Preferably, the dielectric mold 10 is of one piece. In some refinements the dielectric mold 10 comprises several layers composed of different materials. Chemical vapour deposition techniques (CVD) can be used to deposit silicon oxide, etc. Other deposition techniques may be a spinning on of a glass or glass precursors. The thickness or vertical dimension of the dielectric mold 10 is at least several micrometers.

Trenches 11 are formed into the dielectric mold 10 above the contact pads 2. The depth of the trenches 11 is equal to the thickness of the dielectric mold 10. Thus the contact pads 2 become at least partially exposed.

A first conductive layer 12 is deposited on the top surface 111 of the dielectric mold, the side walls 110 of the trenches 11 and the surface 102 of the contact pads 2. The material of the first conductive layer 12 may be of titan nitride or carbon or silicon.

The first conductive layer 12 is still in contact with the contact pads 2. Along with the FIGS. 2 to 4 a preferred method is demonstrated for isolating the first conductive layer 12 from the contact pads 2.

A masking layer 13 is deposited by an atomic layer deposition (ALD) technique (FIG. 2). The conditions in the reaction chamber are selected such that a concentration of the reactant gas decreases in the trench 11 in direction to the substrate surface 101. In a top region B of the trench 11 a concentration of reactant gases is sufficient to deposit the masking layer 13. In a bottom region, which is closer to the substrate surface 101 than the top region, the concentration of the reactant gases is insufficient for a formation of the masking layer 13. This leads to coverage of the first conductive layer 12 by the masking layer 13 only in a top region B of the trench and on the top surface 111 of the dielectric mold 10. In contrast thereto the first conductive layer 12 remains exposed in the bottom region A of the trench 11.

It is sufficient that at least some of the reactant gases do not reach the bottom region, e.g. one precursor (FIG. 2).

The first conductive layer 12 is selectively etched in the bottom region A (FIG. 3). Wet etching techniques are preferred.

The selectivity of the wet etching can be enhanced by pre-processing the masking layer 13. A high temperature annealing process is found to be useful, in particular when the masking layer 13 is formed of aluminium oxide. Temperatures above 850° C. for about 20 seconds reveal good results.

Finally, the masking layer 13 is stripped of (FIG. 4). Now, the first conductive layer 12 is isolated from the contact pad 2.

Along with FIG. 5 an optional step is illustrated. The effective surface of the later formed capacitor can be increased by etching the side walls 110 in the bottom region A. Preferably, the side walls 110 are etched isotropically. Thus, the diameter d of the trench 11 in the bottom region A is increased. This isotropic etching may be effected before the stripping of the masking layer 13, as well.

The description of the first embodiment continues after the optional step of etching the bottom region A. It is understood, however, that the above demonstrated steps can be effected without the optional step applied, as well.

Now, a first dielectric layer 14 is deposited onto the first conductive layer 12 and on the side walls 110 of the bottom region A. The used dielectric materials may comprise at least one of zircon oxide, hafnium oxide, zircon silicon oxide (ZrSiO), zircon aluminium oxide (ZrAlO), hafnium silicon oxide (HfAlO), aluminium oxide (AlO), and doped ZrO/HfO. A doping agent may be a rare earth metal. A combination of the enlisted materials can be used as dielectric material, too. Due to the deposition technique the first dielectric layer 14 is applied onto the contact pads 2, too. Along with FIG. 7 to 10 it is illustrated how to remove the first dielectric layer 14 at least partly from the contact pads 2.

At first, a sacrificial layer 15 is applied over the whole structure, for instance by a suitable chemical vapour deposition process (FIG. 7). The thickness of the sacrificial layer 15 is not uniform. The thickness d1 on the top surface 111 of the dielectric mold 10 is larger then the thickness d2 of the sacrificial layer 15 above the contact pad 2. Such an inhomogeneous thickness can be achieved by an inhomogeneous deposition technique. By controlling the deposition rates and/or the reactant gas concentrations in the reaction chamber a higher growth rate may be achieved on the top surface of the mold 10 compared to growth rate inside the trench 11.

The sacrificial layer 15 is etched by an anisotropic etching process. The anisotropic etching process is stopped, when the sacrificial layer 15 is removed from the surface 102 of the contact pad 2. At this moment, there remains still some of the sacrificial layer 15 on top of the dielectric mold 10. Thus, the first dielectric layer 14 is only exposed close to the contact pad 2.

By a selective etching process the first conductive layer 14 is removed from the contact pad 2 (FIG. 9). Afterwards the sacrificial layer 15 is stripped of (FIG. 10). Now, the contact pads 2 are again at least partly exposed.

A second conductive layer 16 is deposited onto the dielectric layer 14 and the exposed contact pads 2. In contrast to the first conductive layer 12 the second conductive layer 16 remains in contact with the contact pad 2 (FIG. 11).

A mechanical polishing step removes the second conductive layer 16 from the top surface 111 of the dielectric mold 10 (FIG. 12). In a next step a second dielectric layer 18 is deposited (FIG. 13) and a third conductive layer 20 is deposited afterwards (FIG. 14).

Then a contact layer 22 of a conductive material is applied over the whole structure. Additionally, a plug 23 is formed through the first and second dielectric layer 14, 18 in order to connect the first conductive layer 12 and the third conductive layer 20 (FIG. 15). The contact layer 22 may be applied by a chemical vapour deposition and be made of tungsten. Preferably, the vertical plug 23 is formed at an array edge of a plurality of capacitors.

The second conductive layer 16 forms a tube shaped electrode 16. This tube shaped electrode 16 is in electric contact to the contact pad 2. The other two conductive layers 12, 20 are forming a second electrode 12, 20, which is arranged at the outer and the inner side of the tube shaped electrode 16. The inner and the outer part of the counter electrode 12, 20 are connected via the vertical plug 23. The vertical plug 23 is horizontally displaced to the tube shaped electrode 16.

A second embodiment starts with the steps along with FIG. 1 to 6, of which the result is shown in FIG. 16. On a substrate 1 a dielectric mold 30 is applied. Vertical trenches 31 in the mold 30 are extending down to a substrate surface 101 of the substrate 1 and are arranged above contact pads 2 of the substrate 1. A first conductive layer 32 is deposited onto the side walls 110 of the trenches 11, but only in a top region B of the trenches 11. A first dielectric layer 34 covers the first conductive layer 32 and the side walls 110 of the trenches 11 in the bottom region, as well. The contact pads 2 are covered by the first dielectric layer 34. Optionally the bottom region A may have an enlarged diameter as result of an isotropic etching process.

A sacrificial filling 35 is filled into the trench 31 (FIG. 17).

On top of the first dielectric mold 30 a second dielectric mold 50 is applied onto the second dielectric mold 30. Trenches 51 are formed above the contact pad into the second dielectric mold 30. Finally, the sacrificial filling is removed (FIG. 18). The manufactured structure shows now a second trench 51 which extends into a first trench 31.

A sacrificial layer 33 is formed onto the top surface 151 of the second dielectric mold 50 and onto the surface 102 of the contact pad 2 (FIG. 19). The thickness of the sacrificial layer 33 may be inhomogeneous. In this case the thickness is preferably larger on top of the second dielectric mold 50 compared to the thickness on top of the contact pad 2.

In a next step the sacrificial layer 33 is removed from the contact pad 2 by an anisotropic etching process (FIG. 20) leaving the first dielectric layer 34 exposed in the area around the contact pad 2. The sacrificial layer 33 will be removed from the top surface 151, as well, if the sacrificial layer 33 has a uniform thickness. The first dielectric layer 32 is selectively etched in the area of the contact pad 2, in order to expose the contact pad 2 (FIG. 21). The sacrificial layer 33 is removed (FIG. 22).

In subsequent steps a second conductive layer 36, a second dielectric layer 38 and a third conductive layer 40 are deposited (FIG. 23). The second conductive layer 36 is in electric contact with the contact pad 2.

In a last step a trench is formed beside the second trench 51 into the second dielectric mold 50. The trench extends down to the first conductive layer 32 on top of the first dielectric mold 30. The trench 43 becomes filled by a conductive material for forming a vertical plug 43. Thus, the first conductive layer 32 and the third conductive layer 28 are inter-connected by the vertical plug 43.

In a third embodiment a substrate 1 is provided at which surface 101 contact pads 2 are arranged (FIG. 25). A dielectric mold 70 is deposited onto the surface substrate 101. Trenches 71 are formed into the dielectric mold 70. The depth of the trenches 71 is such that the dielectric mold 70 is at least partially removed from contact pads 2.

A first conductive layer 72 is deposited onto the dielectric mold 70 by a chemical deposition technique. The reaction conditions in a reaction chamber are chosen such that the reaction gases do not reach a bottom region A of the trench 11. Thus, a conductive layer 32 is only formed in the top region B of the trench 11. A preferred chemical deposition technique is the atomic layer deposition technique (ALD). The ALD allows a very controlled nonuniform deposition.

The further steps in order to form a capacitor structure are equal to the steps teached along with FIG. 5 to 15 or 16 to 24 and will not be repeated.

Although modifications and changes may be suggested by those skilled in the art, it is the intention of the inventor to embody within the patent warranted hereon all changes and modifications as reasonably and properly come within the scope of his contribution to the art.

Claims

1. A method for forming a capacitor structure comprising the following consecutive steps:

2. The method according to claim 1, wherein

3. The method according to claim 2, wherein

4. The method according to claim 1, wherein

5. The method according to claim 1, wherein

6. The method according to claim 1, wherein

7. The method according to claim 6, wherein

8. The method according to claim 1, wherein

9. The method according to claim 8, wherein

10. The method according to wherein

11. The method according to 10 wherein

12. A capacitor structure on a contact pad comprising a first electrode of a tube shape extending vertically upwards and being arranged in electric contact with the contact pad;a second electrode being arranged around the first electrode and being isolated from the first electrode and the contact pad by a first dielectric layer;a third electrode being arranged along an inner side of the first electrode, spanning horizontally an upper end of the first electrode and being isolated from the first electrode and the contact pad by a second dielectric layer; anda vertical plug contacting the first electrode and the third electrode.