Claims
- 1. A method for forming ohmic contact, comprising the steps of:
- forming an insulating film having a thickness on a diffusive layer formed on a semiconductor substrate;
- forming a mask on said insulating film, the mask having a selective ratio which is less than said insulating film and having an opening portion for a contact hole, the mask being formed of a material having heat resistive properties;
- implanting ions into the diffusive layer through said opening portion;
- providing heat treatment to electrically activate the implanted ions prior to formation of a contact hole, using the mask to limit the activated ions to a predetermined region of the diffusive layer during the heat treatment;
- after providing the heat treatment, completely removing said mask and forming the contact hole by simultaneously etching said mask and the insulating film exposed through the opening portion of said mask; and
- making an electrode come in ohmic contact with the semiconductor substrate exposed from the formed contact hole.
- 2. A method for forming ohmic contact as claimed in claim 1, wherein the process for forming the mask forms a mask on said insulating film having a multilayer structure including a photoresist and at least one other layer.
- 3. A method for forming ohmic contact as claimed in claim 1, wherein the process for forming the mask forms a mask on said insulating film having a multilayer structure including a photoresist and a layer which is formed below the photoresist and having heat resisting properties and a selective ratio less than the insulating film.
- 4. A method for forming ohmic contact as claimed in claim 3, wherein the layer having the heat resisting properties of the mask of said multilayer structure and having the selective ratio less than the insulating film is a SOG film.
- 5. A method for forming ohmic contact as claimed in any one of claims 1 to 4, wherein the process for providing heat treatment after the ion implantation is performed by a heating lamp.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-144440 |
Jun 1994 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/461,664 filed Jun. 5, 1995, abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (2)
Number |
Date |
Country |
61-38858 |
Sep 1986 |
JPX |
61-222235 |
Oct 1986 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
461664 |
Jun 1995 |
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