Claims
- 1. A method for forming a relief pattern on a substrate which comprises the steps of:
- adhering under pressure a photosensitive sheet on the surface of a substrate to be treated, said photosensitive sheet comprising: a photo-pervious base film, a photo-impervious ink layer printed in the part other than desired pattern portion on said photo-pervious base film, a releasing layer, a photosensitive resin layer and a layer of a photo-curable ink in said pattern portion between said releasing layer and photosensitive resin;
- Ii. radiating actinic rays through said photo-pervious base film on said photosensitive sheet on said substrate to cure said photosensitive resin layer in portions corresponding to said pattern portion;
- Iii. peeling off the upper layer of said photo-pervious base film, photo-impervious ink layer and releasing layer, while leaving said photosensitive resin layer and said photo-curable ink layer on said substrate; and
- Iv. contacting a washing solution with said photosensitive resin layer and said photo-curable ink layer on said substrate to wash away any un-cured portions of said photosensitive resin layer.
- 2. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said photosensitive resin layer is adhered on the surface of said substrate, and thereafter the remaining portions of said photosensitive sheet are adhered to said photosensitive resin layer.
- 3. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said photo-pervious base film is made of a plastic film or a cellulose derivative film, and the thickness of said film is within the range of 20 to 200 microns.
- 4. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said releasing layer is made of a weak alkali-soluble material, and the thickness of said releasing layer is within the range of 1 to 5 microns.
- 5. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said photosensitive resin layer is made of an alkali-soluble and photo-curable resin and a photosensitizer.
- 6. A method for forming a relief pattern on a substrate as claimed in claim 1, in which the thickness of said photosensitive resin layer is within the range of 10 to 80 microns.
- 7. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said actinic rays are ultraviolet rays having an intensity of 100 to 1,000 w/m.sup.2 at 365 m.mu. in wave length.
- 8. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said washing solution is an aqueous solution of member selected from the group consisting of sodium hydroxide, sodium carbonate, potassium hydroxide and ammonia.
- 9. A method for forming a relief pattern on a substrate as claimed in claim 1, in which the thickness of said photo-pervious base film is within the range of 20 to 200 microns, said photo-impervious ink has a negative density of at least 2, said releasing layer has a thickness within the range of 1 to 5 microns, said photo-curable inks have a negative density within the range of 0.5 to 1.5, said photosensitive resin layer has a thickness within the range of 10 to 80 microns, wherein said photosensitive resin layer contains 0.1 to 10 weight percent photosensitizer, and wherein said actinic rays are ultraviolet rays having an intensity of 100 to 1,000 w/m.sup.2 at 365 m.mu. in wavelength.
- 10. A method for forming a relief pattern on a substrate as claimed in claim 1, in which said photosensitive resin layer has a thickness within the range of 15 to 60 microns.
- 11. A method for forming a relief pattern on a substrate as claimed in claim 1 in which said releasing layer is a weak alkali-soluble material selected from the group consisting of protein, cellulose derivative and polyvinyl alcohol and wherein said photosensitive resin layer is an alkalisoluble and photo-curable resin selected from the group consisting of polyvinyl alcohol-cinnamic ester, acrylic resin-cinnamic ester, acrylate resin, polyamide resin, diazo resin and amide resin having an unsaturation equivalent of 200 to 5,000 and an acid value of 50 to 100.
Priority Claims (2)
Number |
Date |
Country |
Kind |
48-29394 |
Mar 1973 |
JA |
|
48-35052 |
Mar 1973 |
JA |
|
Parent Case Info
This application is a continuation-in-part of application Ser. No. 451,504, now abandoned, filed on Mar. 15, 1974.
US Referenced Citations (11)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
451504 |
Mar 1974 |
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