Claims
- 1. A method for reducing the amount of nitrogen generated during a high-density plasma etching performed on an underlayer of a photo-resist layer added with amine compounds simultaneously with reducing a thickness of a barrier layer formed on the photo-resist layer with a process of the high-density plasma etching, the method comprising the steps of:adjusting etching parameters comprising: an operation pressure of about 3 mTorr to 100 mTorr; a CO flow rate of about 10 sccm to 50 sccm; a flow rate of C4F8 of about 10 sccm to 20 sccm; a total source power of about 500 W to 2000 W; and a process temperature during high-density plasma etching of about −15° C. to 10° C.
- 2. The method of claim 1, wherein the CO flow rate is about 10 sccm to 25 sccm.
- 3. The method of claim 1, wherein the step of adjusting the etching parameters further comprises adjusting a flow rate of an argon gas less than about 500 sccm.
- 4. The method of claim 1, wherein the step of adjusting the etching parameters further comprises adjusting a flow rate of an argon of about 100 sccm to 500 sccm.
- 5. The method of claim 1, further comprises a bias power of about 500 W to 2000 W.
- 6. A method for high-density plasma etching, comprising the steps of:providing a substrate; forming a material layer on the substrate; forming a patterned photo-resist layer on the oxide layer; and patterning the material layer by the high-density plasma etching simultaneously with suppressing a formation of a barrier layer over the substrate and reducing nitrogen gas generated in the patterned photo-resist layer.
- 7. The method of claim 6, wherein the step of patterning the material layer comprises a CO flow rate of about 10 sccm to 50 sccm.
- 8. The method of claim 7, wherein the step of patterning the material layer comprises the CO flow rate is about 10 sccm to 25 sccm.
- 9. The method of claim 6, wherein the step of patterning the material layer comprises an operation pressure in a high-density plasma etching chamber used to perform the high-density plasma etching of about 3 mTorr to 100 mTorr.
- 10. The method of claim 6, wherein the step of patterning the material layer comprises adjusting a flow rate of an argon gas at a range less than 500 sccm.
- 11. The method of claim 10, wherein the step of patterning the material layer comprises the flow rate of the argon gas of about 100 sccm to 500 sccm.
- 12. The method of claim 6, wherein the step of patterning the material layer comprises a flow rate of C4F8 of about 10 sccm to 15 sccm.
- 13. The method of claim 6, wherein the step of patterning the material layer comprises a total source power of about 500 W to 1100 W.
- 14. The method of claim 6, wherein the step of patterning the material layer is performed under a temperature of about −15° C. to 10° C.
- 15. The method of claim 6, wherein the step of patterning the material layer comprises a bias power of about 500 W to 2000 W.
CROSS-REFERENCE OF RELATED APPLICATIONS
This application is a Continuation-in-part application of, and claims the priority benefit of, U.S. application Ser. No. 09/241,840 filed on Feb. 01, 1999 now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5773201 |
Fujimura et al. |
Jun 1998 |
|
5824604 |
Bar-Gadda |
Oct 1998 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/241840 |
Feb 1999 |
US |
Child |
09/533036 |
|
US |