Anthony et al., "In situ cleaning of silicon subsrate surfaces by remote plasma-excited hydrogen," J. Vac. Sci. Technol. B, vol. 7, No. 4, Jul./Aug. 1989, pp. 621-626. |
Fujimura et al., "Ashing of Ion-Implanted Resist Layer," Japanese Journal of Applied Physics, vol. 28, No. 10, Oct. 1989, pp. 2130-2136. |
Higashi et al., "Ideal hydrogen termination of the Si(111) surface," Appl. Phys. Lett., vol. 56, No. 7, Feb. 12, 1990, pp. 656-658. |
Takahagi et al., "Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification technique," J. Appl. Phys., vol. 68, No. 5, Sep. 1, 1990, pp. 2187-2191. |
Kishimoto et al., "In situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces," Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. 2273-2276. |
Cho et al., "Surface electronic states of low-temperature H-plasma cleaned Si(100)," Appl. Phys. Lett., vol. 59, No. 16, Oct. 14, 1991, pp. 1995-1997. |