Claims
- 1. A method of manufacturing a fast heat rise resistor comprising, taking a substrate having an upper surface,affixing a layer of film over a first portion of the upper surface of the substrate; leaving a second portion of the upper surface of the substrate exposed; applying a double layer of material over both the layer of film and the exposed second portion of the upper surface of substrate, the double layer of material comprising a lower layer of resistive foil in contact with the layer of film and the second portion of the upper surface of the substrate, and an upper layer of conductive material selectively etching away a first portion of the upper layer of conductive material and leaving a second portion of the upper layer of conductive material in place; selectively etching away a portion of the lower layer of resistive foil so as to leave a resistive foil trace of a certain width overlying the layer of film and exposed upwardly through the first etched away portion of the upper layer of conductive material.
- 2. The method of claim 1 and further comprising removing the layer of film between the resistive foil and the substrate so as to suspend the resistive foil in spaced relation above the upper surface of the substrate.
- 3. The method of claim 1 wherein the film is Kapton®(polyimide).
- 4. The method of claim 1 wherein the substrate is polyimide.
- 5. The method of claim 1 wherein the conductive material is copper.
- 6. The method of claim 1 wherein the resistive foil is Ni/Cr.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a divisional of Ser. No. 09/765,901 filed Jan. 19, 2001.
US Referenced Citations (12)
Foreign Referenced Citations (2)
Number |
Date |
Country |
199 17 236 |
Oct 1999 |
DE |
199 50 854 A 1 |
May 2000 |
DE |