Claims
- 1. A method of forming a prosthetic device having a substrate, consisting essentially of:
- triode cathodic sputtering of carbon at a low temperature and a pressure of between 6.times.10.sup.-4 to 6.times.10.sup.-3 mbar and at a sputtering voltage of from about 2,000 to 3,200 volts and a sputtering current of from about 0.1 to 0.3 amps onto the substrate without degradation thereof to form a continuous turbostratic biocompatible carbon coating having a density of at least about 2.1 g/cm.sup.3 on the substrate which is firmly adherent thereto.
- 2. The method of claim 1, wherein the step of triode cathodic sputtering is conducted at a filament current of rom about 80 to 90 amps.
- 3. The method of forming a prosthetic deevice according to claim 1, wherein the carbon cathode consists of graphite or pyrolytic carbon or a combination thereof.
- 4. The method of forming a prosthetic device according to claim 1, wherein the carbon cathode and anode are cooled by water conveyed through conduits continguous therewith.
- 5. The method according to claim 1, wherein the substrate is flat and is rotated about the carbon cathode and about itself for uniform distribution of the sputtered carbon thereon.
- 6. The method according to claim 1, wherein the substrate is tubular and is rotated about its axis for uniform distribution of the sputtered carbon thereon.
- 7. The method according to claim 1, wherein the substrate is suture yarn and is rotated about a frame for uniform distribution of the sputtered carbon thereon.
- 8. The method according to claim 1, further comprising masking portions of the substrate so that the sputtered carbon only is deposited on unmasked portions.
- 9. The method according to claim 1, wherein the substrate is a polyester resin and the temperature at the substrate is maintained at about 80.degree. C. to enhance the adhesion of the sputtered carbon to the substrate.
- 10. The method according to claim 1, wherein the carbon sputtered onto the substrate has a thickness of not more than about 1.0 micron.
- 11. The method according to cliam 1, wherein the material of the substrate is selected from the group consisting of polyester resins, polytetrafluoroethylene, silicone, polyacetal resins, polyurethanes, polyethylene, cobalt-chromium alloys, titanium and titanium alloys, and wherein the carbon sputtered on the substrate is turbostratic.
- 12. The method according to claim 1 wherein the substrate is a non-refractory metal.
- 13. The method according to claim 12 wherein the non-refractory metal is titanium or a titanium alloy.
- 14. The method of claim 12 wherein the non-refractory metal is a cobalt-chromium alloy.
- 15. A method of forming a prosthetic device having a substrate, comprising:
- forming a plasma beam at a filament current of about 80-90 amps and directing the beam toward a carbon cathode circumscribed by an anode, the cathode and anode being remote from the site of formation of the plasma beam,
- sputtering the carbon cathode at a pressure of from about 6.times.10.sup.-4 to 6.times.10.sup.-3 mbar by said beam while cooling the cathode and anode and operating the cathode at from about 2,000 to 3,200 volts and a current of from about 0.1 to 0.3 amps, and
- directing said sputtered carbon onto the substrate without degradation thereof to form a biocompatible carbon coating on the substrate which is firmly adherent thereto, and has a density of at least about 2.1 g/cm.sup.3.
- 16. The method of claim 15, wherein the density of the deposited carbon is at least 2.2 g/cm.sup.3.
- 17. The method of claim 16, wherein the density of the deposited carbon is from about 2.2 to 2.4 g/cm.sup.3.
Priority Claims (1)
Number |
Date |
Country |
Kind |
67924 A/86 |
Dec 1986 |
ITX |
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Parent Case Info
This is a divisional of application Ser. No. 07/462,849 filed Jan. 3, 1990, which is a continuation of Ser. No. 07/391,659 filed Aug. 8, 1989 now abandoned, which is a continuation of Ser. No. 07/011,539 filed Jan. 6, 1987 now abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (1)
Number |
Date |
Country |
3116040 |
Nov 1982 |
DEX |
Non-Patent Literature Citations (3)
Entry |
C. Neissmantel, "Ion Beam . . . Structures", J. Vac. Sci. Technol. 18(2), Mar. 1981, pp. 179-185. |
B. Banks et al., "Ion Beam . . . Films", J. Vac. Sci. Technol. 21(3), Sep./Oct. 1982, pp. 807-814. |
Aisenberg et al., "Ion Beam . . . Carbon", J. of Appl. Phys., vol. 42, No. 7, Jun. 1971, pp. 2953-2958. |
Divisions (1)
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Number |
Date |
Country |
Parent |
462849 |
Jan 1990 |
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Continuations (2)
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Number |
Date |
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Parent |
391659 |
Aug 1989 |
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Parent |
11539 |
Jan 1987 |
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