Method for manufacturing semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device using a method in which a desired position is rapidly subjected to laser irradiation while switching laser irradiation patterns. With respect to an organic memory element having a structure in which an organic compound layer is interposed between a pair of conductive layers, data is written to the organic memory element by laser irradiation using a laser irradiation apparatus. Further, a laser beam emitted from a laser oscillator is split by a diffractive optical element into a plurality of laser beams, thereby irradiating a plurality of portions on the organic compound layer with laser beams by single irradiation.

Description

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B each show a configuration example of a semiconductor device;

FIG. 2 shows a configuration example of a laser irradiation apparatus;

FIGS. 3A and 3B each show a configuration example of a semiconductor device;

FIGS. 4A and 4B each show a configuration example of a semiconductor device;

FIG. 5 shows a configuration example of a laser irradiation apparatus;

FIG. 6 shows a configuration example of a laser irradiation apparatus;

FIG. 7 shows a configuration example of a laser irradiation apparatus;

FIG. 8 shows a configuration example of a laser irradiation apparatus;

FIGS. 9A and 9B each show a configuration example of a semiconductor device;

FIGS. 10A to 10E show steps of manufacturing a semiconductor device;

FIGS. 11A to 11E each show a structure example of a semiconductor device;

FIGS. 12A and 12B each show a manufacturing example of a semiconductor device;

FIGS. 13A and 13B each show a manufacturing example of a semiconductor device;

FIGS. 14A to 14C show steps of manufacturing a semiconductor device;

FIGS. 15A and 15B show steps of manufacturing a semiconductor device;

FIGS. 16A and 16B show steps of manufacturing a semiconductor device;

FIGS. 17A and 17B show steps of manufacturing a semiconductor device;

FIG. 18 shows a step of manufacturing a semiconductor device; and

FIGS. 19A to 19H show usage patterns of a semiconductor device of the invention.

Claims

1. A method for manufacturing a semiconductor device comprising: forming a first conductive layer over a substrate;forming an organic compound layer over the first conductive layer;forming a second conductive layer over the organic compound layer;introducing a laser beam emitted from a laser oscillator into a diffractive optical element, thereby splitting the laser beam into a plurality of laser beams; andirradiating the organic compound layer with the plurality of laser beams from the second conductive layer side.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the organic compound layer is selectively irradiated with the plurality of laser beams, thereby electrical resistance between the first conductive layer and the second conductive layer is partially changed.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the organic compound layer is formed by spin coating, screen printing, or a droplet discharge method.

4. A method for manufacturing a semiconductor device according to claim 1, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

5. A method for manufacturing a semiconductor device comprising: forming a first conductive layer over a substrate provided with a transistor, wherein the first conductive layer is connected to the transistor;forming an organic compound layer over the first conductive layer;forming a second conductive layer over the organic compound layer;introducing a laser beam emitted from a laser oscillator into a diffractive optical element, thereby splitting the laser beam into a plurality of laser beams; andirradiating the organic compound layer with the plurality of laser beams from the second conductive layer side.

6. A method for manufacturing a semiconductor device according to claim 5, wherein the organic compound layer is selectively irradiated with the plurality of laser beams, thereby electrical resistance between the first conductive layer and the second conductive layer is partially changed.

7. A method for manufacturing a semiconductor device according to claim 5, wherein the organic compound layer is formed by spin coating, screen printing, or a droplet discharge method.

8. A method for manufacturing a semiconductor device according to claim 5, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

9. A method for manufacturing a semiconductor device comprising: forming a first conductive layer over a substrate;forming an organic compound layer over the first conductive layer;forming a second conductive layer over the organic compound layer;introducing a laser beam emitted from a laser oscillator into a deflector;introducing the laser beam transmitted through the deflector into a diffractive optical element, thereby splitting the laser beam into a plurality of laser beams; andirradiating the organic compound layer with the plurality of laser beams from the second conductive layer side.

10. A method for manufacturing a semiconductor device according to claim 9, wherein the organic compound layer is selectively irradiated with the plurality of laser beams, thereby electrical resistance between the first conductive layer and the second conductive layer is partially changed.

11. A method for manufacturing a semiconductor device according to claim 9, wherein the organic compound layer is formed by spin coating, screen printing, or a droplet discharge method.

12. A method for manufacturing a semiconductor device according to claim 9, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

13. A method for manufacturing a semiconductor device comprising: forming a first conductive layer over a substrate provided with a transistor, wherein the first conductive layer is connected to the transistor;forming an organic compound layer over the first conductive layer;forming a second conductive layer over the organic compound layer;introducing a laser beam emitted from a laser oscillator into a deflector;introducing the laser beam transmitted through the deflector into a diffractive optical element, thereby splitting the laser beam into a plurality of laser beams; andirradiating the organic compound layer with the plurality of laser beams from the second conductive layer side.

14. A method for manufacturing a semiconductor device according to claim 13, wherein the organic compound layer is selectively irradiated with the plurality of laser beams, thereby electrical resistance between the first conductive layer and the second conductive layer is partially changed.

15. A method for manufacturing a semiconductor device according to claim 13, wherein the organic compound layer is formed by spin coating, screen printing, or a droplet discharge method.

16. A method for manufacturing a semiconductor device according to claim 13, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

17. A method for manufacturing a semiconductor device comprising: forming a first conductive layer over a substrate;forming an organic compound layer over the first conductive layer;forming a second conductive layer over the organic compound layer;introducing a laser beam emitted from a laser oscillator into a diffractive optical element, thereby splitting the laser beam into a plurality of laser beams;introducing the plurality of laser beams transmitted through the diffractive optical element into a digital micromirror device having a plurality of micromirrors; andirradiating the organic compound layer with the plurality of laser beams from the second conductive layer side.

18. A method for manufacturing a semiconductor device according to claim 17, wherein the organic compound layer is selectively irradiated with the plurality of laser beams, thereby electrical resistance between the first conductive layer and the second conductive layer is partially changed.

19. A method for manufacturing a semiconductor device according to claim 17, wherein the organic compound layer is formed by spin coating, screen printing, or a droplet discharge method.

20. A method for manufacturing a semiconductor device according to claim 17, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.

21. A method for manufacturing a semiconductor device comprising the steps of: forming a first conductive layer over a substrate provided with a transistor, wherein the first conductive is connected to the transistor;forming an organic compound layer over the first conductive layer;forming a second conductive layer over the organic compound layer;introducing a laser beam emitted from a laser oscillator into a diffractive optical element, thereby splitting the laser beam into a plurality of laser beams;introducing the plurality of laser beams transmitted through the diffractive optical element into a digital micromirror device having a plurality of micromirrors; andirradiating the organic compound layer with the plurality of laser beams from the second conductive layer side.

22. A method for manufacturing a semiconductor device according to claim 21, wherein the organic compound layer is selectively irradiated with the plurality of laser beams, thereby electrical resistance between the first conductive layer and the second conductive layer is partially changed.

23. A method for manufacturing a semiconductor device according to claim 21, wherein the organic compound layer is formed by spin coating, screen printing, or a droplet discharge method.

24. A method for manufacturing a semiconductor device according to claim 21, wherein the diffractive optical element is a transmissive diffractive optical element or a reflective diffractive optical element.