Method for on-wafer high voltage testing of semiconductor devices

Abstract

A method for wafer high voltage testing of semiconductor devices is disclosed. The method involves adding a patterning layer onto a passivation layer of the semiconductor devices and then etching vias through the passivation layer to expose conductive test points. Testing of the semiconductor devices begins with engaging the conductive test points with high voltage test probes of a testing apparatus and then applying a high voltage test sequence to the conductive test points via the high voltage test probes. The testing of the semiconductor devices concludes by disengaging the high voltage test probes from a last one of the semiconductor devices and then removing the patterning layer from the passivation layer of the semiconductor devices.

Description

FIELD OF THE DISCLOSURE

The present disclosure relates to high voltage testing of semiconductor devices.

BACKGROUND

On-wafer parametric and Known Good Device (KGD) testing for high voltage devices can be challenging. Test voltages in excess of 600 V are typically applied to a wafer with semiconductor devices under test in order to measure leakage and/or breakdown voltage. Often high voltage ionization and breakdown of air or surface flashover will confound electrical measurements of the semiconductor devices' intrinsic device performance. For example, an electric field of around about 30 kV/cm will cause the air between features of a semiconductor device to ionize, which will usually allow a destructive energy flow into the semiconductor device. Fortunately, electric field levels for materials making up semiconductor devices typically exceed 30 kV/cm. Thus, high voltage semiconductor devices are packaged such that an ionization of air to the point of breakdown is prevented. However, before packaging and during wafer testing an air ionization leading to a destructive voltage breakdown is an ever present risk for the semiconductor devices under test. Moreover, even nondestructive voltage breakdowns resulting from air ionization and/or flashover are not indicative of intrinsic device performance.

A common technique for suppressing air ionization and breakdown is to dispense a fluid having a relatively high dielectric strength onto a wafer having semiconductors to be tested. Examples of high dielectric strength fluids include fluorocarbon-based fluids such as perfluorohexane (C₆F₁₄). While suppressing air ionization and breakdown using high dielectric strength fluids is effective, it is also impractical for high volume production testing.

FIG. 1 depicts a cross-section of a prior art semiconductor device 10 before undergoing a prior art approach that involves depositing a relatively increased amount of a high dielectric strength material that makes up a passivation layer 12, that at least partially covers conductive features 14 and 16 to suppress air ionization. The semiconductor device 10 has a substrate 18 that carries epitaxial layers 20 onto which the conductive features 14 and 16 are disposed. The passivation layer 12 also covers a section of the epitaxial layers 20 that is between the conductive features 14 and 16.

High electric fields between the conductive features 14 and 16 can sometimes be confined to the passivation layer 12. However, a destructive breakdown may still occur if the layer thickness of the passivation layer 12 is not thick enough. In such a case, a thickening of the passivation layer 12 may be considered as illustrated in FIG. 2. However, there are practical limitations as to how thick the passivation layer 12 can be. For example, inorganic dielectrics like silicon nitride (SiN) are more prone to cracking as a function of increased thickness. A practical thickness for SiN is around about 1 μm, whereas a thickness approaching 5 μm is approaching impracticability. Moreover, if the passivation layer 12 is deposited using a relatively slow process such as atomic layer deposition (ALD), impracticalities of excessive time consumption and excessive cost are introduced for the deposition of material layers greater than 0.1 μm. Thus, a need remains for a high voltage on-wafer testing method for semiconductor devices in a high volume production environment.

SUMMARY

The present disclosure provides a method for on-wafer high voltage testing of semiconductor devices. The method involves adding a patterning layer onto a passivation layer of the semiconductor devices and then etching vias through the passivation layer to expose conductive test points. Testing of the semiconductor devices begins with engaging the conductive test points with high voltage test probes of a testing apparatus and then applying a high voltage test sequence to the conductive test points via the high voltage test probes. The testing of the semiconductor devices concludes by disengaging the high voltage test probes from a last one of the semiconductor devices and then removing the patterning layer from the passivation layer of the semiconductor devices.

Those skilled in the art will appreciate the scope of the disclosure and realize additional aspects thereof after reading the following detailed description in association with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.

FIG. 1 is a cross-section diagram of a prior art semiconductor device that is subject to destruction during high voltage testing.

FIG. 2 is a cross-section diagram of the prior art semiconductor device having a thicker passivation layer for increasing the breakdown voltage between adjacent conductive features.

FIG. 3 is a cross-section view depicting the semiconductor device after preparation for on-wafer high voltage testing in accordance with the present disclosure.

FIG. 4 is a graph depicting breakdown voltage tests of semiconductor devices having and not having a patterning layer.

FIG. 5 is a flow chart of method steps for conducting high voltage testing of a semiconductor device in accordance with the present disclosure.

DETAILED DESCRIPTION

The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the disclosure and illustrate the best mode of practicing the disclosure. Upon reading the following description in light of the accompanying drawings, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.

It will be understood that when an element such as a layer, region, or substrate is referred to as being “over,” “on,” “in,” or extending “onto” another element, it can be directly over, directly on, directly in, or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over,” “directly on,” “directly in,” or extending “directly onto” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.

The present disclosure provides a method for on-wafer high voltage testing of semiconductor devices. The method involves adding a patterning layer onto a passivation layer of the semiconductor devices and then etching vias through the passivation layer to expose conductive test points. Testing of the semiconductor devices begins with engaging the conductive test points with high voltage test probes of a testing apparatus and then applying a high voltage test sequence to the conductive test points via the high voltage test probes. The testing of the semiconductor devices concludes by disengaging the high voltage test probes from a last one of the semiconductor devices and then removing the patterning layer from the passivation layer of the semiconductor devices. The patterning layer can be removed by any number of techniques known to those skilled in the art. For example, a common technique for removing the patterning layer is by chemical etching. Other techniques such as mechanical etching may also be employed.

FIG. 3 is a cross-section view depicting the semiconductor device 10 after preparation in accordance with the present disclosure for on-wafer high voltage testing. In a typical wafer fabrication process, a patterning layer 22 is used as a mask for etching vias through the passivation layer 12. Examples of resist materials usable for the patterning layer 22 can be, but are not limited to photoresist, polyimide, polybenzobisoxazole (PBO), and other type polymers. The patterning layer 22 can be relatively thick having a range of around about 1 μm to around about 10 μm. The patterning layer 22 also has a relatively high dielectric strength that is typical of similar materials used in wafer fabrication. A minimum dielectric strength for the patterning layer 22 significantly exceeds the dielectric strength of air, which is around 30 kV/cm. In one embodiment, a lower preferred range for the dielectric strength of the patterning layer 22 is from around about 2000 kV/cm to around about 2500 kV/cm. In another embodiment, a higher preferred range for the dielectric strength of the patterning layer 22 is from around about 4000 kV/cm to around about 5000 kV/cm.

A via 24 is shown etched through the passivation layer 12 to expose the conductive feature 14, which is typically made of metal. Another via 26 is depicted as being etched through the passivation layer 12 to expose the conductive feature 16, which is also typically made of metal. However, it is to be understood that the conductive features 14 and 16 can also be conductive nonmetals such as doped semiconductors.

In accordance with the present disclosure, the patterning layer 22 is left on the passivation layer 12 after via etching to protect the semiconductor device 10 from destructive air ionization and flashover during high voltage electrical testing. A wafer (not shown) typically includes a plurality of the semiconductor device 10. High voltage testing is typically conducted on each of a plurality of semiconductor devices 10 before the patterning layer 22 is removed from the passivation layer 12.

FIG. 4 is a graph depicting the breakdown voltage of the plurality of semiconductor devices 10 tested with and without the patterning layer 22 (FIG. 3). In the particular electrical tests conducted to produce the data shown in FIG. 4, gallium nitride (GaN) high electron mobility transistors (HEMTs) made up the plurality of semiconductor devices 10. Each of the plurality of semiconductor devices 10 electrically tested included a 0.2 μm silicon nitride (SiN) passivation layer 12 deposited over conductive features 14 and 16 that in this case were top metal layers used for electrical probing and wire bonding.

Data points designated by the filled circles represent the breakdown voltage experienced by semiconductor devices tested with the patterning layer 22 added to the passivation layer 12 (FIGS. 1 and 3). Data points designated by open circles represent the breakdown voltage experienced by semiconductor devices tested without the patterning layer 22. Notice that the semiconductor devices tested without the patterning layer 22 experienced a breakdown voltage of around about 700 V due to air ionization. In contrast, the semiconductor devices tested with the patterning layer 22 experienced breakdown voltages that were considerably higher, including breakdown voltages up to around about 1400 V. In all, the semiconductor devices tested with the patterning layer 22 experienced breakdown voltages that ranged from around about 900 V to around about 1400 V.

FIG. 5 is a flow chart of method steps for conducting on-wafer high voltage testing of semiconductor devices in accordance with the present disclosure. The method steps begin by providing a wafer having semiconductor devices that include a passivation layer (step 100). A next step adds a patterning layer onto the passivation layer (step 102). Vias are then etched through the passivation layer to expose conductive test points (step 104). Next, the conductive test points are engaged with high voltage test probes of a test apparatus (step 106). A programmed high voltage test sequence of the test apparatus is then applied to the conductive test points by way of the high voltage test probes (step 108). Yet another step disengages the high voltage test probes from a last one of the semiconductor devices being tested (step 110). The process ends with the removal of the patterning layer from the passivation layer of the semiconductor devices (step 112). The patterning layer 22 can be removed by any number of techniques known to those skilled in the art. For example, a common technique for removing the patterning layer 22 is by chemical etching. Other techniques such as mechanical etching may also be employed.

Those skilled in the art will recognize improvements and modifications to the embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.

Claims

1. A method for on-wafer high voltage testing of semiconductor devices comprising: providing a wafer having a plurality of semiconductor devices that include a passivation layer disposed over a plurality of conductive test points;adding a patterning layer onto the passivation layer;etching vias through the passivation layer to expose the plurality of conductive test points;providing an automated test apparatus having high voltage test probes;engaging the plurality of conductive test points through the vias using the high voltage test probes;applying a high voltage test to the plurality of conductive test points by way of the high voltage test probes;disengaging the high voltage test probes from the plurality of conductive test points; andremoving the patterning layer from the passivation layer of the semiconductor devices.

2. The method of claim 1 wherein the patterning layer is made of a polymer.

3. The method of claim 2 wherein the polymer is polyimide.

4. The method of claim 2 wherein the polymer is polybenzobisoxazole (PBO).

5. The method of claim 1 wherein the patterning layer is made of photoresist.

6. The method of claim 1 wherein the patterning layer has a thickness that ranges from around about 1 μm to around about 5 μm.

7. The method of claim 1 wherein the patterning layer has a thickness that ranges from around about 5 μm to around about 10 μm.

8. The method of claim 1 wherein a dielectric strength of the patterning layer ranges from around about 2000 kV/cm to around about 2500 kV/cm.

9. The method of claim 1 wherein a dielectric strength of the patterning layer ranges from around about 4000 kV/cm to around about 5000 kV/cm.

10. The method of claim 1 wherein the step of applying a high voltage test energizes the high voltage test probes to a voltage that ranges from around about 600 V to around about 1600 V.

11. The method of claim 1 wherein the step of applying a high voltage test energizes the high voltage test probes to a voltage that ranges from around about 800 V to around about 2000 V.

12. The method of claim 1 wherein the automated test apparatus is programmed to provide a high voltage test sequence that records predetermined electrical parameters associated with the plurality of semiconductor devices.

13. The method of claim 1 wherein the plurality of semiconductor devices are gallium nitride (GaN) high electron mobility transistors (HEMTs).

14. The method of claim 13 wherein the passivation layer has a thickness of around about 0.2 μm.

15. The method of claim 13 wherein the passivation layer is made up of silicon nitride (SiN).

16. The method of claim 1 wherein the passivation layer ranges in thickness from around about 0.2 μm to around about 0.3 μm.

17. The method of claim 1 wherein the passivation layer ranges in thickness from around about 0.8 μm to around about 1.2 μm.

18. The method of claim 1 wherein removing the patterning layer from the passivation layer is accomplished using chemical etching.

19. The method of claim 1 wherein removing the patterning layer from the passivation layer is accomplished at least in part using mechanical etching.

20. The method of claim 1 wherein the conductive test points are located on metal layers that are exposed by the vias.