Claims
- 1. A method for preparing electrically-conductive zinc oxide consisting of the steps of preparing a vapor mixture comprising elemental zinc vapor and vapor of at least one dopant-forming metal compound selected from the group consisting of compounds of trivalent and tetravalent or pentavalent metals having boiling points of not more than that of zinc and free of oxygen atom in a predetermined mixing rate ranging from 0.005 to 5 parts by weight of the dopant-forming metal, as expressed in terms of the oxide thereof, per 100 parts by weight of zinc, as expressed in terms of zinc oxide; introducing the resulting vapor mixture into an oxidation chamber through a vapor mixture-injecting nozzle; and then oxidizing the vapor mixture with an oxidizing gas.
- 2. The method according to claim 1 wherein the dopant-forming metal compound is a chloride or a bromide of Al, Ga, In, Sn, Ge or Si.
- 3. The method according to claim 2 wherein the dopant-forming metal compound is selected from the group consisting of AlCl.sub.3, GaCl.sub.3, InCl.sub.3, SnCl.sub.4, GeCl.sub.4, SiCl.sub.4, AlBr.sub.3 and SnBr.sub.4.
- 4. A method for preparing electrically-conductive zinc oxide consisting of the steps of preparing a vapor mixture comprising elemental zinc vapor and vapor of at least one dopant-forming metal compound selected from the group consisting of compounds of metals having boiling points of not more than that of zinc and free of oxygen atom in a predetermined mixing rate ranging from 0.005 to 5 parts by weight of the dopant-forming metal, as expressed in terms of the oxide thereof, per 100 parts by weight of zinc, as expressed in terms of zinc oxide; introducing the resulting vapor mixture into an oxidation chamber through a vapor mixture-injecting nozzle; oxidizing the vapor mixture with an oxidizing gas; and adding hydrogen gas to the oxidizing gas injected into the vapor mixture in an amount less than the lower explosive limit of the resulting oxidizing gas/hydrogen gas mixture, or washing the resulting electrically-conductive zinc oxide with water and then drying to give electrically-conductive zinc oxide free of halide molecules.
- 5. A method for preparing electrically-conductive zinc oxide consisting of the steps of preparing a vapor mixture comprising elemental zinc vapor and vapor of at least one dopant-forming metal compound selected from the group consisting of compounds of metals having boiling points of not more than that of zinc and free of oxygen atom in a predetermined mixing rate ranging from 0.005 to 5 parts by weight of the dopant-forming metal, as expressed in terms of the oxide thereof, per 100 parts by weight of zinc, as expressed in terms of zinc oxide; introducing the resulting vapor mixture into an oxidation chamber through a vapor mixture-injecting nozzle; oxidizing the vapor mixture with an oxidizing gas; and calcining the resulting electrically-conductive zinc oxide at a temperature ranging from 200.degree. to 600.degree. C. in an inert or reducing atmosphere.
- 6. The method according to claim 1 wherein the oxidizing gas is air or air rich in oxygen having an oxygen concentration ranging from 25 to 50% by volume.
- 7. The method according to claim 1 wherein the vapor mixture is prepared by injecting, through a nozzle, the dopant-forming metal compound in the form of vapor or in the form of fine powder suspended in an inert gas as a carrier into a stream of the elemental zinc vapor prior to the introduction thereof into an oxidation step.
- 8. The method according to claim 1 wherein elemental zinc vapor is generated by using a rectifying column for purifying zinc.
- 9. The method according to claim 1 wherein the vapor mixture-injecting nozzle has an orifice whose cross sectional area is not less than 2 cm.sup.2 and the zinc vapor generating rate is controlled to not less than 6 g/min.
- 10. The method according to claim 1 wherein the temperature of the zinc vapor is not less than 850.degree. C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-322257 |
Nov 1992 |
JPX |
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Parent Case Info
This is a Continuation of application Ser. No. 08/148,364 filed Nov. 8, 1993.
US Referenced Citations (8)
Foreign Referenced Citations (17)
Number |
Date |
Country |
780787 |
Mar 1968 |
CAX |
0408308 |
Jan 1991 |
EPX |
1559324 |
Mar 1969 |
FRX |
54-161598 |
Dec 1979 |
JPX |
55-10478 |
Jan 1980 |
JPX |
56-120518 |
May 1981 |
JPX |
56-69266 |
Jun 1981 |
JPX |
120518 |
Jul 1981 |
JPX |
58-15068 |
Jan 1983 |
JPX |
58-161923 |
Sep 1983 |
JPX |
1-126228 |
May 1989 |
JPX |
3-60429 |
Mar 1991 |
JPX |
60429 |
Mar 1991 |
JPX |
660429 |
Mar 1991 |
JPX |
3-115122 |
May 1991 |
JPX |
1084062 |
Jan 1965 |
GBX |
1181580 |
Feb 1970 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Grant & Hackh's Chemical Dictionary, 5th ed., p. 446, 1987. |
Continuations (1)
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Number |
Date |
Country |
Parent |
148364 |
Nov 1993 |
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