Patent Application
20180195200
The application claims the benefit of Taiwan application serial No. 106101012, filed on Jan. 12, 2017, and the entire contents of which are incorporated herein by reference.
The present invention relates to a method for processing electronic components and, more particularly, to a method for processing electronic components using a supercritical fluid.
As the semiconductor technology becomes more and more sophisticated, electronic components with difference functions can be gradually developed. The electronic components with different functions can be used to form circuits with different functions and therefore can be used in different electronic devices.
In the manufacturing process of the electron components, the raw material could undergo several procedures such as growth, lithography and etching. However, the growth procedure will inevitably lead to defects, resulting in poor performance of the electronic components. To overcome this problem, in the conventional method for improving the performance of the electronic components, the workers start from improving the yield of the growth procedure to increase the performance of the electronic components.
Despite the methods for manufacturing the electronic components are continuously improved, the workers cannot guarantee the growth procedure is perfect. Thus, the improvement of the performance of the manufactured electronic components is still limited. Moreover, the improvement of the performance of the manufactured electronic components will be limited by the requisite conditions such as temperature or pressure in the method for manufacturing the electronic components, leading to unsatisfactory results.
In light of the inconvenience, the conventional method should therefore be improved to enhance the practicality thereof.
It is therefore an objective of the present invention to provide a method for processing electronic components using a supercritical fluid. Without changing the original procedure, the electronic components can be modified, improving the performance of the electronic components.
One embodiment of the present invention discloses a method for processing an electronic component using a supercritical fluid, including: introducing a supercritical fluid into a cavity, wherein the supercritical fluid is doped with a hydrogen isotope-labeled compound; and modifying an electronic component in the cavity by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
The hydrogen isotope-labeled compound can be a protium-labeled compound or a deuterium-labeled compound. The hydrogen isotope-labeled compound can be selected from the group consisting of LiH, NaH, KH, CaH2, MgH2, BeH2, PH3, BnHm, CxHy, HF, AsH3, NH3, AlH3, H7S, H2Se, HCl, HBr, HI, NH4Cl and CO(NH2)2.
Another embodiment of the present invention discloses a method for processing electronic components using a supercritical fluid, including: introducing a supercritical fluid into a cavity, wherein the supercritical fluid is doped with an organic metal compound; and modifying an electronic component in the cavity at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
A further method for processing electronic components using supercritical fluid, including: introducing a supercritical fluid into a cavity, wherein the supercritical fluid is doped with either an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element; and modifying an electronic component in the cavity at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
The halogen component is fluorine, chlorine, bromine or iodine.
The method can further include introducing an electromagnetic wave into the cavity, wherein the electronic component is modified by the supercritical fluid together with the electromagnetic wave. The electronic component can be a finished electronic component or a semi-finished electronic component. The electronic component is a light-emitting component, a photovoltaic component, an energy-storing component, a sensing component, a passive component, a micro-electromechanical component, a memory component, a thin-film transistor component, a high-power electronic component or an electronic element containing an organic compound. The electronic component is modified by the supercritical fluid at the temperature of 77-1000 K. The electronic component is modified by the supercritical fluid at the pressure of 3-1000 atm.
Accordingly, the method for processing an electronic component using a supercritical fluid according to the present invention can be used to modify the defects of the electronic components E, reducing the interfacial defects and the internal defects. The performance loss due to the defects can be further reduced (such as reducing power consumption, etc.). Therefore, by the method for processing an electronic component using a supercritical fluid according to the present invention, the efficiency of electrical conversion can be improved, and the performance of the electronic components can be enhanced.
The present invention will become more fully understood from the detailed description given hereinafter and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention, and wherein:
The electronic component E can be a finished electronic component or a semi-finished electronic component. As an example, the electronic component E can be selected from, but not limited to, a light-emitting component (such as LED or laser), a photovoltaic component (such as a solar cell), an energy-storing component (such as a battery), a sensing component (such as a gas sensor, a light sensor or a pressure sensor), a passive component (such as a resistor, a capacitor or an inductor), a micro-electromechanical component (such as an accelerometer or a gyroscope), a memory component (such as a resistive random access memory), a thin-film transistor component, a high-power electronic component (such as a high withstand voltage transistor) or an electronic element containing an organic compound (such as an organic thin-film transistor or an organic light-emitting diode). The structure of the electronic component E and the position where defects occur in the electronic component E can be appreciated by a person having ordinary skill in the art. Therefore, detail description is not given to avoid redundancy.
In this embodiment, as shown in
The characteristics such as density, diffusivity and viscosity of the supercritical phase are between the characteristics of the liquid phase and the gas phase. Therefore, compared to high penetrability and zero solubility of the gas phase and to low penetrability and high solubility of the liquid phase, the supercritical phase (supercritical fluid) possesses both high penetrability and high solubility. Thus, the supercritical fluid B can be used to remove the defects in the material layer of the electronic component E, to improve the defects in the interface and to modify the thin-layer membrane (such as the change in K value). At the same time, an electromagnetic wave can also be used to improve the modification efficiency. As an example, the electromagnetic wave can also be introduced into the cavity A1, the at least one electronic component E in the cavity A1 is modified by the supercritical fluid B together with the electromagnetic wave. The specific way to modify the electronic component E in the cavity A1 can be appreciated by a person having ordinary skill in the art. Therefore, detail description is not given to avoid redundancy.
Accordingly, after being modified by the supercritical fluid B, the electronic component E can be used in a state without defects or with a few detects. Therefore, compared to an electronic component without modification by the supercritical fluid B, the electronic component E modified by the method according to the present invention has improved work efficiency. In a non-restrictive example, the performance difference of different electronic components E before and after modification by the supercritical fluid B is represented by the characteristic curves of the electronic components E.
Referring to
Referring to
Referring to
Accordingly, the method for processing an electronic component using a supercritical fluid according to the present invention can be used to modify the defects of the electronic components E, reducing the interfacial defects and the internal defects. The performance loss due to the defects can be further reduced (such as reducing power consumption, etc.). Therefore, by the method for processing an electronic component using a supercritical fluid according to the present invention, the efficiency of electrical conversion can be improved, and the performance of the electronic components can be enhanced.
Although the invention has been described in detail with reference to its presently preferable embodiment, it will be understood by one of ordinary skill in the art that various modifications can be made without departing from the spirit and the scope of the invention, as set forth in the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 106101012 | Jan 2017 | TW | national |
