Claims
- 1. Method for the fabrication of very hard, abrasion and erosion resistant surfaces on refractory metal carbide structures, which includes surface decomposing the refractory metal carbide by reaction first with titanium and reacting the decomposition products and titanium with subsequently added boron to form said surface.
- 2. The method according to claim 1, including also destroying the original surface surface and forming in substitution thereon a single phase alloy in the refractory metal carbide structure, said alloy comprising titanium, carbon and said refractory metal.
- 3. The method according to claim 2, including also reacting the components of said single phase alloy with boron in multiphase alloy producing relation.
- 4. The method according to claim 3, including also reacting boron with said refractory metal carbide structure below said single phase alloy.
- 5. Method for the fabrication of very hard, abrasion and erosion resistant surfaces on refractory metal carbide structure comprising tungsten, tantalum, titanium or zirconium carbide and an effective amount of a binder metal comprising cobalt, nickel, chromium or iron, which includes surface decomposing the refractory metal carbide to dissociate the refractory metal and the carbon by reaction thereof first with titanium, and thereafter reacting the decomposition products comprising the refractory metal and said binder metal with titanium and subsequently added boron to form said surface.
- 6. The method according to claim 5, including also diffusing boron from a diffusion pack into said surface decomposed refractory metal carbide structure, in boriding relation.
- 7. The method according to claim 6, including also difusing said boron beyond said structure decomposed surface to form subsurface borides of said binder metal below said surface, said subsurface borides being of a hardness approximating said refractory metal carbides, whereby said surface is uniformly supported against particulate fluid impingement.
- 8. The method according to claim 7, including also diffusing titanium from a diffusion pack to form a single phase alloy in the refractory metal carbide structure, said alloy comprising titanium, carbon, said binder metal, and said refractory metal.
- 9. The method according to claim 8, including also reacting the components of said single phase alloy with said diffused boron in multiphase alloy producing relation.
- 10. The method according to claim 9, including also employing a refractory metal carbide structure comprising tungsten carbide and a metal binder comprising cobalt or nickel as said structure.
- 11. Method of forming very hard, abrasion and erosion resistant surfaces on tungsten carbide surfaces, which includes exposing said tungsten carbide and cobalt or nickel binder structure at the surface to be treated to a titanium diffusion pack and diffusing titanium into said structure surface for a time, at a temperature and in an amount obliterating the structure surface and decomposing the surface tungsten carbide into a single phase alloy comprising tungsten, titanium, cobalt or nickel respectively, and carbon.
- 12. The method according to claim 11, including also diffusing boron into said single phase alloy under reaction conditions to form a substitute structure surface comprising multiphase alloy of boron with titanium, cobalt or nickel respectively, and tungsten.
- 13. The method according to claim 12, including also continuing boron diffusion to pass boron below said boride alloy system for forming borides with said cobalt or nickel structure binder.
- 14. Method of forming very hard, abrasion and erosion resistant surfaces on tungsten carbide and cobalt or nickel binder structures such as chokes, valve assemblies, plugs, seats and like structures to be subjected to high pressure particulate laden fluids in use, which includes in sequence diffusing into the structure titanium from a titanium diffusion pack comprising from about 10% by weight titanium, up to about 90% by weight refractory, and a small but effective amount of halide carrier to decompose the tungsten carbide in the region of diffusion and to form a single phase titanium, tungsten, binder and carbon-containing solution-type alloy, and diffusing boron from a boron diffusion pack comprising up to about 100% by weight boron, and a small but effective amount of a halide carrier into the titanium containing single phase alloy for a time and at a temperature sufficient to form a continuous titanium diboride, tungsten boride, and tungsten titanium boride containing alloy system on the structure as an added surface.
- 15. The method according to claim 14, including also employing about 10 to about 30% titanium, about 30 to about 90% aluminum oxide, and less than about 1% halide carrier in the titanium diffusion pack.
- 16. The method according to claim 15, including also effecting titanium diffusion for not less than about 2 hours and at not less than about 1800.degree. F.
- 17. The method according to claim 16, including also effecting boron diffusion for not less than about 2 hours and at not less than about 1700.degree. F.
- 18. The method according to claim 14, including also employing about 10 to about 30% titanium, about 30 to about 90% aluminum oxide, and less than about 1% halide carrier in the titanium diffusion pack.
- 19. The method according to claim 18, including also effecting boron diffusion from a refractory containing pack having at least 1% boron for not less than about 2 hours and at not less than about 1700.degree. F.
- 20. The method according to claim 19, including also employing aluminum oxide as the refractory and less than about 1% halide carrier in the born diffusion pack.
REFERENCE TO RELATED APPLICATION
This application is a continuation in part of our earlier filed application, Ser. No. 6-240861, filed Mar. 5, 1981, now abandoned which application is hereby incorporated herein.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
50-151911 |
Dec 1975 |
JPX |
514031 |
Jul 1976 |
SUX |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
240861 |
Mar 1981 |
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