Claims
- 1. A method for producing electrolyzed water in a process for treating a semiconductor wafer with electrolyzed water, comprising the steps of:
- (a) adding an electrolyte into pure water purified through an ion exchanger to produce pure water containing an electrolyte;
- (b) producing electrolyzed water by applying a voltage to electrodes disposed in an electrolytic cell containing pure water and electrolyte therein;
- (c) controlling the temperature of said pure water during the step of producing electrolyzed water by applying heating means to the outside of said electrolytic cell to maintain said pure water at a temperature in the range of 20.degree.-70.degree. C.; and (d) applying said electrolyzed water to the semiconductor wafer.
- 2. The method as recited in claim 1, wherein said temperature of said pure water is controlled to be in the range of 20 to 70 degrees centigrade.
- 3. The method as recited on claim 1, wherein said electrolyzed water is anodic electrolyzed water.
- 4. The method as recited in claim 1, wherein said electrolyzed water is cathodic electrolyzed water.
- 5. The method as recited in claim 1, wherein said electrolyzed water is a mixture of anodic and cathodic electrolyzed water.
- 6. The method as recited in claim 1, wherein said temperature is more than 35.degree. C. and less than or equal to 70.degree. C.
- 7. The method as recited in claim 1, wherein said electrolyte is ammonium chloride.
- 8. The method as recited in claim 1, wherein an amount of said electrolyte added to said pure water is not more than 20 mM.
- 9. The method as recited in claim 1, wherein an amount of said electrolyte added to said pure water is not more than 80 mM.
- 10. A method for producing electrolyzed water in a process for treating a semiconductor wafer with electrolyzed water, comprising the steps of:
- (a) adding an electrolyte into pure water purified through an ion exchanger to produce pure water containing an electrolyte;
- (b) producing electrolyzed water by applying a voltage to electrodes disposed in an electrolytic cell containing pure water and electrolyte therein;
- (c) controlling the temperature of said pure water during the step of producing electrolyzed water by applying heating means to the outside of said electrolytic cell to maintain said pure water at a temperature high enough to decompose a water cluster and to volatilize oxygen gas and hydrogen gas from said electrolyte and low enough to prevent an oxidizing material and a reducing material produced at said electrodes to be lost by volatilization, said heating means not in direct contact with said pure water; and (d) applying said electrolyzed water to the semiconductor wafer.
- 11. The method as recited in claim 10, wherein said temperature is more than 35.degree. C. and less than or equal to 70.degree. C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-56107 |
Mar 1994 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 08/410,309, filed Mar. 24, 1995, now U.S. Pat. No. 5,543,030.
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Divisions (1)
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Number |
Date |
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Parent |
410309 |
Mar 1995 |
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