The present disclosure relates to a method for manufacturing a light-emitter.
In recent years, progress has been made in research and development of an organic electroluminescence element (hereinafter, referred to as an “organic EL element”). The organic EL element is a light-emitter that uses the phenomenon of electroluminescence occurring in organic material). The organic EL element has a structure in which a light-emitting layer is interposed between a first electrode (anode) and a second electrode (cathode). A bank made from an insulating material is formed laterally along the light-emitting layer, and defines a shape of the light-emitting layer. Between the first electrode and the light-emitting layer, a hole injection layer, a hole transport layer, or a hole injection transport layer, for example, is interposed, as necessary. Between the second electrode and the light-emitting layer, an electron injection layer, an electron transport layer, or an electron injection transport layer is interposed, as necessary. Hereinafter, the hole injection layer, the hole transport layer, the hole injection transport layer, the electron injection layer, the electron transport layer, and the electron injection transport layer are collectively referred to as a “charge injection transport layer”.
Although the charge injection transport layer of a conventional organic EL element is formed using a conductive polymer material such as PEDOT (a mixture of polythiophene and polystyrene sulfonate), use of the charge injection transport layer formed using a metal compound such as a transition metal oxide has been proposed (see Patent Literature 1, for example). The metal compound has a better voltage-current density property than the PEDOT, and is considered to be less likely to deteriorate when high current is applied to increase luminescence intensity. The metal compound is therefore expected to be used for the charge injection transport layer.
[Patent Literature 1]
It is also necessary to improve a luminescence property of an organic EL element having the above-mentioned structure in which the metal compound is applied to the charge injection transport layer.
One non-limiting and exemplary embodiment provides a method for manufacturing a light-emitter having a favorable luminescence property.
In one general aspect, the techniques disclosed here feature a method for manufacturing a light-emitter including a first electrode, a laminate disposed on the first electrode that includes a charge injection transport layer and a light-emitting layer, a second electrode disposed on the laminate, and a bank that defines an area in which the light-emitting layer is to be formed, the method comprising: forming the charge injection transport layer; forming a bank material layer that forms the bank on the charge injection transport layer; removing a portion of the bank material layer to partially expose the charge injection transport layer; heat-treating a remaining portion of the bank material layer; and forming the light-emitting layer on an exposed surface of the charge injection transport layer after the heat treatment, wherein the charge injection transport layer is made from a material that is eroded when exposed to a liquid used while the charge injection transport layer is partially exposed, the charge injection transport layer having a recess in the exposed surface thereof so that a bottom of the recess is lower than a bottom surface of the remaining portion of the bank material layer, the recess being formed by the exposed surface eroded by the liquid, the remaining portion of the bank material layer being made fluid so that the bank material layer extends to cover an upper peripheral edge of the recess, the light-emitting layer being formed by using a laser transfer method.
With the above-mentioned structure, since the upper peripheral edge of the recess formed in the charge injection transport layer is covered with the part of the bank, the electrical field concentration in the vicinity of the upper peripheral edge of the recess is suppressed when the light-emitter emits light. As a result, localized flow of current to the light-emitting layer is suppressed. An occurrence of uneven luminance in a light-emitting surface is therefore suppressed, and the luminescence property is further improved.
These general and specific aspects may be implemented using a light-emitter.
Additional benefits and advantages of the disclosed embodiments will be apparent from the specification and figures. The benefits and/or advantages may be individually provided by the various embodiments and features of the specification and drawings disclosed, and need not all be provided in order to obtain one or more of the same.
Regarding the organic EL element to which the metal compound is applied as described in the section of Description of the Related Art, the inventor found, through an intense study, that the uneven luminance can occur in the light-emitting surface and a life of the organic EL element can be reduced due to localized deterioration of the light-emitting layer.
After further studying these problems, the inventor gained the following knowledge.
According to the structure in which the metal compound is applied to the charge injection transport layer (the hole injection layer 4 in this example), a recess 4a is formed in an upper surface of the hole injection layer 4 (see
The above-described problems and knowledge are unique to an organic EL element to which a metal compound is applied, and have technical significance in terms of not having been revealed.
As described above, the inventor arrived at the following technical features through a series of research and studies. That is, by covering the upper peripheral edge of the recess formed in the upper surface of the charge injection transport layer with a part of the bank, concentration of charges in the vicinity of the upper peripheral edge of the recess is suppressed when an organic EL element emits light. As a result, localized flow of current to the light-emitting layer is suppressed.
<Outline of One Aspect of Present Disclosure>
In one general aspect, the techniques disclosed here feature a method for manufacturing a light-emitter including a first electrode, a laminate disposed on the first electrode that includes a charge injection transport layer and a light-emitting layer, a second electrode disposed on the laminate, and a bank that defines an area in which the light-emitting layer is to be formed, the method comprising: forming the charge injection transport layer; forming a bank material layer that forms the bank on the charge injection transport layer; removing a portion of the bank material layer to partially expose the charge injection transport layer; heat-treating a remaining portion of the bank material layer; and forming the light-emitting layer on an exposed surface of the charge injection transport layer after the heat treatment, wherein the charge injection transport layer is made from a material that is eroded when exposed to a liquid used while the charge injection transport layer is partially exposed, the charge injection transport layer having a recess in the exposed surface thereof so that a bottom of the recess is lower than a bottom surface of the remaining portion of the bank material layer, the recess being formed by the exposed surface eroded by the liquid, the remaining portion of the bank material layer being made fluid so that the bank material layer extends to cover an upper peripheral edge of the recess, the light-emitting layer being formed by using a laser transfer method.
With the above manufacturing method, since the upper peripheral edge of the recess formed in the charge injection transport layer is covered with the part of the bank, the electrical field concentration in the vicinity of the upper peripheral edge of the recess is suppressed when the light-emitter emits light. As a result, localized flow of current to the light-emitting layer is suppressed. An occurrence of uneven luminance in a light-emitting surface is therefore suppressed, and the luminescence property is further improved.
The charge injection transport layer may be a hole injection layer made from one of a metal oxide, a metal nitride, and a metal oxynitride. In general, these are hydrophilic materials. The recess is therefore formed in a washing process with pure water in the process of forming the bank.
A hole transport layer that transports holes from the hole injection layer to the light-emitting layer may be interposed between the hole injection layer and the light-emitting layer.
The charge injection transport layer may be made from a material that is eroded when exposed to a liquid used for forming the bank.
The liquid may be water or a TMAH solution. With this structure, the recess is formed in a process of forming a bank without adding extra steps.
The bank may be formed so that a part of the bank reaches a bottom of the recess and that a side surface of the bank slopes upward from the bottom of the recess to a top of the bank. With this structure, when the light-emitting layer is formed using printing technology such as inkjet technology, ink is distributed to every corner of an area defined by the bank. As a result, formation of a void and the like is suppressed.
The bank may be formed so that a part of the bank is out of contact with a bottom of the recess. In order to cover the upper peripheral edge of the recess with the part of the bank, it is considered that a bank material is heat-treated to make it fluid so that the upper peripheral edge of the recess is covered with a part of the bank material. With the above structure, the temperature and time of the heat treatment are reduced as it is not necessary to extend the bank material to the bottom of the recess.
The bank may be formed so as to include an insulating material. With this structure, adjacent light-emitting layers are insulated from each other.
The light-emitting layer may comprise an organic EL layer.
The charge injection transport layer may be formed so as to extend laterally along a bottom surface of the bank.
The upper peripheral edge of the recess may be formed so as to comprise a convex portion composed of (i) a part of the upper surface of the charge injection transport layer in which the recess is not formed, and (ii) an inner side surface of the recess.
In the forming the light-emitting layer, for each of a plurality of areas defined by the bank, a transfer substrate having a transfer layer of a corresponding color may be irradiated with a laser to sublimate and transfer the transfer layer onto the charge injection transport layer, thereby forming a plurality of light-emitting layers of different colors.
The forming the light-emitting layer may include the successive steps of: irradiating, with a laser, a first transfer substrate including a photothermal conversion layer and a first transfer layer of a first luminescent color laminated on the photothermal conversion layer, to sublimate and transfer the first transfer layer, thereby forming the light-emitting layer of the first luminescent color, and irradiating, with a laser, a second transfer substrate including the photothermal conversion layer and a second transfer layer of a second luminescent color laminated on the photothermal conversion layer, to sublimate and transfer the second transfer layer, thereby forming the light-emitting layer of the second luminescent color.
The following describes an embodiment of the present disclosure in detail, with reference to the drawings. In the present embodiment, an organic EL element using an organic EL material as a light-emitting layer is taken as an example of the light-emitter, and an organic EL display is taken as an example of the light-emitting device having a plurality of light-emitters. Note that the drawings are not to scale, so that proportions of members in the drawings are different from actual proportions.
<Configuration>
A organic EL display 100 is a top-emission type organic EL display composed of organic EL elements 10a, 10b, and 10c arranged in a matrix and each provided with a light emitting layer having a color of either red (R), green (G), or blue (B). Each organic EL element functions as a sub-pixel, and three consecutive organic EL elements of colors of RGB function as a pixel as a whole.
In an example of
On the other hand, a bank element 55b extending along the X axis delimits adjacent light-emitting layers 56a1 and 56a2 arranged along the Y axis, adjacent light-emitting layers 56b1 and 56b2 arranged along the Y axis, and adjacent light-emitting layers 56c1 and 56c2 arranged along the Y axis.
On the TFT substrate 1 (hereinafter, simply referred to as a “substrate 1”), the first electrodes (anodes) 2 are formed in a matrix. On the first electrode 2, the ITO (indium tin oxide) layer 3 and the hole injection layer 4 are laminated in the stated order. Note that, while the ITO layer 3 is laminated only on the first electrode 2, the hole injection layer 4 is formed not only on the first electrode 2 but also over the substrate 1.
The bank 5 is formed above a periphery of the first electrode 2 via the hole injection layer 4. The light-emitting layer 6 is laminated in an area defined by the bank 5. On the light-emitting layer 6, the electron injection layer 7, the second electrode (cathode) 8, and the passivation layer 9 are formed continuously across the consecutive organic EL elements 10a, 10b and 10c, passing over the bank 5.
<Structure of Each Component>
The substrate 1 is made from an insulating material such as alkali-free glass, soda glass, nonluminescent glass, phosphate glass, boric-acid glass, quartz, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, silicon resin, and alumina.
The first electrode 2 is made of Ag (silver). Note that the first electrode 2 may be made of APC (alloy of silver, palladium and copper), ARA (alloy of silver, rubidium and gold), MoCr (alloy of molybdenum and chrome) or NiCr (alloy of nickel and chrome), for example. When the organic EL display 100 is a top-emission type display, it is desirable that the first electrode 2 be made of a light-reflective material.
The ITO layer 3 is interposed between the first electrode 2 and the hole injection layer 4, and has a function of improving the bond between these layers.
The hole injection layer 4 is made from WOx (tungsten oxide) or MoxWyOz (molybdenum-tungsten oxide). Note that the hole injection layer 4 only has to be made from a metal compound performing a function of injecting holes. Examples of such a metal compound are a metal oxide, a metal nitride, and a metal oxynitride.
When the hole injection layer 4 is made from a specific metal compound, it is easy to inject holes, and electrons contribute to light emission effectively in the light-emitting layer 6. Favorable luminescence property is therefore obtained. It is desirable that the specific metal compound be a transition metal. The oxidization number of a transition metal is plural, and therefore the transition metal can have a plurality of levels. As a result, it becomes easy to inject holes, and thus drive voltage is reduced.
As shown in
The upper peripheral edge 4c of the recess protrudes from the bottom 4b of the recess. Therefore, if the upper peripheral edge 4c is not covered with the covering part 5d made from an insulating material, electric field concentrates in the vicinity of the upper peripheral edge 4c of the recess, and localized flow of current to the light-emitting layer 6 occurs. As a result, the uneven luminance occurs in a light-emitting surface and a life of the organic EL element is reduced due to localized deterioration of the light-emitting layer 6. In the present embodiment, however, the above-mentioned problems are prevented, because the upper peripheral edge 4c of the recess is covered with the covering part 5d made from an insulating material. Note that it is desirable that the thickness of the covering part 5d (a shortest distance between the upper peripheral edge 4c of the recess and the light-emitting layer 6) be 2 nm to 5 nm to effectively suppress the electric field concentration.
In an example of
In the present embodiment, the covering part 5d reaches the bottom 4b of the recess 4a, and a side surface of the bank 5 slopes upward from the bottom 4b of the recess to a top of the bank 5. With this structure, when the light-emitting layer 6 is formed using printing technology such as inkjet technology, ink is distributed to every corner of an area defined by the bank. As a result, formation of a void and the like is suppressed.
The bank 5 partitions the light-emitting layer 6 into sub-pixels. The bank 5 is made from an organic material, such as a resin, and has an insulating property. Examples of the organic material are an acrylic resin, a polyimide resin and a novolac-type phenolic resin. It is desirable that the bank 5 be resistant to organic solvent. Furthermore, the bank 5 can be subjected to an etching process, a baking process or the like. Therefore, it is desirable that the bank 5 be made from a highly resistant material so as not to be excessively deformed or degenerated by such processes.
The light-emitting layer 6 constitutes a functional layer. It is desirable that the light-emitting layer 6 be made from a fluorescent material such as an oxinoid compound, perylene compound, coumarin compound, azacoumarin compound, oxazole compound, oxadiazole compound, perinone compound, pyrrolo-pyrrole compound, naphthalene compound, anthracene compound, fluorene compound, fluoranthene compound, tetracene compound, pyrene compound, coronene compound, quinolone compound and azaquinolone compound, pyrazoline derivative and pyrazolone derivative, rhodamine compound, chrysene compound, phenanthrene compound, cyclopentadiene compound, stilbene compound, diphenylquinone compound, styryl compound, butadiene compound, dicyanomethylene pyran compound, dicyanomethylene thiopyran compound, fluorescein compound, pyrylium compound, thiapyrylium compound, selenapyrylium compound, telluropyrylium compound, aromatic aldadiene compound, oligophenylene compound, thioxanthene compound, anthracene compound, cyanine compound, acridine compound, metal complex of a 8-hydroxyquinoline compound, metal complex of a 2-bipyridine compound, complex of a Schiff base and a group three metal, metal complex of oxine, rare earth metal complex, etc., as recited in Japanese Patent Application Publication No. 5-163488.
The electron injection layer 7 has a function of transporting, to the light-emitting layer 6, an electron injected from the second electrode 8. It is desirable that the electron injection layer 7 be made from barium, phthalocyanine, fluorine lithium, or a combination of these materials.
The second electrode 8 is made of ITO, or IZO (indium zinc oxide), for example. When the organic EL display 100 is a top-emission type display, it is desirable that the second electrode 8 be made of a light-transmissive material.
The passivation layer 9 has a function of preventing the light-emitting layer 6 and so on from being exposed to moisture and air. The passivation layer 9 is made from a material such as SiN (silicon nitride) and SiON (silicon oxynitride). When the organic EL display 100 is a top-emission type display, it is desirable that the passivation layer 9 be made of a light-transmissive material.
<Manufacturing Method>
At first, as shown in
Next, as shown in
Next, as shown in
Since WOx or MoxWyOz, which is a material for the thin film 11, is soluble in pure water and a TMAH solution, bank residues attached to a surface of the thin film 11 are removed by being washed using the developer, and, as shown in
Next, as shown in
As shown in
As illustrated in
The photothermal conversion layer 22 adhesively holds the transfer layer 6X before use. When irradiated with a laser, the photothermal conversion layer 22 converts energy of a laser light into heat so as to heat and sublimate the transfer layer 6X. Specifically, the photothermal conversion layer 22 is a film having a thickness of 200 nm that has been formed, by sputtering, from a material (a metallic material such as Cr and Mo) capable of absorbing and converting a laser light into heat, for example.
The transfer layer 6X is a material for the light-emitting layer 6. The transfer layer 6X is a layer formed by adding an organic material of a predetermined luminescent color described above (fluorescent material) to a xylene solution with a concentration of 1.0 wt/V %, dropping the solution on a surface of the photothermal conversion layer 22 based on a well-known spin coat method, and drying the dropped solution. The thickness of the transfer layer 6X is adjustable to approximately 40 nm to 60 nm. Instead of the spin coat method, the transfer layer 6X may be formed by a well-known inkjet method, die coat method, and other evaporation methods.
In the process of forming the light-emitting layer, the donor substrate 20 having the above-mentioned structure is disposed on the substrate on which the bank 5 has been formed. The glass substrate 20 is irradiated with a laser from a position corresponding to a region between the adjacent banks 5. The photothermal conversion layer 22 is heated only in a portion corresponding to the laser-irradiated portion, and the heated portion of the photothermal conversion layer 22 sublimates and transfers a corresponding portion of the transfer layer 6X onto the recess 4a formed in the hole injection layer 4. The light-emitting layer 6 is formed in the above-mentioned manner. By sequentially performing the process of forming the light-emitting layer by the laser transfer method as described above using the donor substrate 20 including the transfer layer 6X of each of RGB colors, the light-emitting layer 6 of each of the RGB colors is formed.
(Laser Transfer Method)
The laser transfer method has recently been drawing attention as an effective method to achieve miniaturization of a light-emitter and a large screen display in an organic EL display and the like (see Patent Literature 2, for example). The laser transfer method is a practical method, as it also has advantages that a donor substrate including a transfer layer of a predetermined luminescent color is preparable in advance and a film can be formed on a large-sized substrate in air without using a large-sized vacuum device (chamber) as used in the vacuum evaporation method.
The present inventor aims to improve a luminescence property by applying a metal compound to a charge injection layer of an organic EL element. As a result of an intense study on these points, the present inventor gained the following knowledge.
In the laser transfer method, the donor substrate 20 is generally partially irradiated with a laser so that a portion of the transfer layer 6X corresponding to an area defined by the adjacent banks 5 is sublimated and transferred to form the light-emitting layer 6. In the course of the process, the laser transfer method has the following problems.
[Problem of Void and Transfer Diffusion]
Since the laser transfer method is an evaporation method utilizing sublimation of an organic material in principle, if a relatively angled portion or the like exists on a surface targeted for the transfer, a sublimated material is less likely to reach deep into the angled portion, compared to a case where a liquid material is used. Accordingly, as shown in
[Problem of Exposure of Hole Injection Layer]
When laser irradiation via the donor substrate 20 is performed from a position offset from a position corresponding to a target position on the substrate on which the bank 5 has been formed, the light-emitting layer 6Y, which is primarily to be formed on the hole injection layer 4, is also formed in an offset position as shown in
Furthermore, when the second electrode (cathode) 8 alone, or a combination of an electron transport layer 7 formed from a low-resistance material and the second electrode 8 is formed on the light-emitting layer 6Y, the hole injection layer 4 and the second electrode 8, or the hole injection layer 4 and the electron transport layer 7 are directly connected to each other in the vicinity of the partially exposed region S2. This can result in a short-circuit, and cause a problem that the organic EL element does not emit light as a whole.
To address the above-mentioned problems, in the organic EL display 100 according to the present embodiment, upper peripheral edges 4c and 4c′ of the recess 4a formed in the hole injection layer 4 are each covered with a part of the bank 5 (the covering part 5d). By providing the covering part 5d, the light-emitting layer 6 is disposed without being in contact with the edges 4c and 4c′. There is no relatively angled portion, which is attributable to the upper peripheral edges 4c and 4c′ of the recess, in a region to which the light-emitting layer is to be formed, it is possible to prevent formation of the void S1 and to densely form the light-emitting layer 6 having a uniform thickness. As a result, it is possible to maintain a laminate structure which is stable to a change in temperature environment in a process after the process of forming the light-emitting layer, at the time of driving a light-emitter, or during storage. Especially at the time of driving the organic EL display 100 after completion, the electrical field concentration in the vicinity of the upper peripheral edges 4c and 4c′ of the recess 4a is suppressed, and, as a result, localized flow of current to the light-emitting layer 6 is suppressed. An occurrence of uneven luminance in a light-emitting surface is therefore suppressed, and the luminescence property is expected to be further improved.
In addition, by forming the covering part 5d, a tolerance for an offset amount from a laser irradiation position corresponding to a target position on the substrate on which the bank 5 has been formed is increased by a length of a bottom surface of the covering part 5d. With this structure, as shown in
As described above, since it is unnecessary to adhesively form the transfer layer 6X on a surface portion of the hole injection layer 4 covered with the covering part 5d, an area on the hole injection layer 4 in which the light-emitting layer is to be formed is efficiently reduced. The transfer layer 6X sublimated by the laser irradiation is therefore accumulated primarily in the area (
A process subsequent to the process of forming the light-emitting layer is described next.
Next, as shown in
According to the above manufacturing method, even when the recess 4a is formed in the exposed portion of the hole injection layer 4 during manufacturing, the electrical field concentration in the vicinity of the upper peripheral edge 4c of the recess is suppressed because the upper peripheral edge 4c of the recess is covered with the covering part 5d, and the light-emitting layer 6 is formed on the covering part 5d.
Furthermore, according to the above manufacturing method, after the thin film 11 having a uniform thickness is formed, a surface of the thin film 11 is partially dissolved to form a recess when bank residues are removed by being washed using the developer. As a result, the hole injection layer 4 having a reduced thickness in a light-emitting area is formed. In an actual process of forming a film, productivity is maintained relatively constant when a thick film is once formed and a thickness of the film is then adjusted, compared to a case where a thin film is formed in the first place.
In the process of forming a film, in order to form an extremely thin film, it is generally necessary to form the film in a relatively short time period. The thin film thus formed, however, is not stable in thickness, quality, and the like, and is likely to vary in thickness, quality, and the like. This is because the formation is performed even when a condition for the formation is not yet stabilized (in a sputtering method, until a plasma is generated in a chamber by discharge, and a plasma state is stabilized), and thus a thickness of an unstable portion of a film formed during the time period accounts for a large proportion of the overall thickness of the film. In contrast, according to the above manufacturing method, a thin film 11 having a certain thickness is first formed, and then a surface of the thin film 11 is partially dissolved to form a recess. The above manufacturing method is therefore advantageous because the hole injection layer 4 having a good charge injection transport property and having a reduced thickness in a light-emitting area is efficiently produced.
<Other Matters>
Although having been explained based on the above embodiment, the present disclosure is not limited to the above embodiment. For example, the following modifications can also be implemented.
(1) In the above embodiment, WOx or MoxWyOz is used as a material for the hole injection layer 4. In general, however, a metal oxide, a metal nitride, and a metal oxynitride are likely to be eroded by pure water. Therefore, even when a metal other than Mo (molybdenum) and W (tungsten) is used as a material for the hole injection layer 4, a similar effect is obtained by applying the present embodiment.
(2) In the above embodiment, the recess is formed by the hole injection layer being eroded by pure water during washing. However, an effect of suppressing the electrical field concentration in the vicinity of the upper peripheral edge of the recess is obtained even when the recess is formed in another manner, by applying the present disclosure. For example, the recess may be formed by the hole injection layer being eroded by an etching solution during etching, or by the hole injection layer being eroded by a release agent during removal of the resist pattern. As described above, the present disclosure is effective in a case where the hole injection layer is made from a material that is eroded when exposed to a liquid used for forming the bank, in particular, the hole injection layer is made from a material that is eroded when exposed to a liquid used while the hole injection layer is partially exposed.
(3) In the above embodiment, the covering part extending from the bank reaches the bottom 4b of the recess beyond the upper peripheral edge 4c of the recess. However, the present disclosure is not limited to the above as long as at least the upper peripheral edge 4c of the recess is covered. For example, as shown in
In the above embodiment, the recess 4a is formed in the hole injection layer 4 by the development in the process of forming the bank. In the present disclosure, however, mask pattering or the like may be used as a method for forming the recess.
(4) In
(5) In the above embodiment, as the charge injection transport layer, only the hole injection layer 4 is interposed between the first electrode and the light-emitting layer. The present disclosure, however, is not limited to the above. For example, as shown in
Furthermore, the charge injection transport layer may be constituted only from a hole injection layer, and the hole injection layer and a hole transport layer constituting a functional layer may be interposed between the first electrode and the light-emitting layer. Specifically, as shown in a portion B in
(6) In the above embodiment, since the first electrode 2 is formed from the thin Ag film, the ITO layer 3 is formed on the first electrode 2. When the first electrode 2 is formed from an Al-based material, it is possible to adopt a single layer structure of the anode without forming the ITO layer 3.
(7) In the above embodiment, although the organic EL display is taken as an example of the light-emitting device having a plurality of light-emitters, the present disclosure is not limited to this. The present disclosure may be applied to a luminaire and the like.
(8) In the above embodiment, although the so-called pixel bank (a bank having a lattice shape) is adopted, the present disclosure is not limited to this. For example, a line bank (banks arranged in lines) may be adopted. In an example of
(9) In the above embodiment, although a top-emission type light-emitter is adopted, the light-emitter of the present disclosure is not limited to the top-emission type light-emitter. A bottom-emission type light-emitter may be adopted.
(10) In the above embodiment, although only the electron injection layer is interposed between the light-emitting layer and the second electrode, the electron transport layer may be interposed in addition to the electron injection layer.
(11) In the above embodiment, although an organic material is used as a bank material, an inorganic material may be used instead.
In this case, similarly to a case where an organic material is used, the bank material layer is formed by application or the like. A portion of the bank material layer is removed by forming a resist pattern on the bank material layer, and then performing etching using a predetermined etching solution (e.g. a tetramethylammonium hydroxide (TMAH) solution). The resist pattern is removed by an aqueous or non-aqueous release agent after the etching. Next, residues remaining after the etching are removed by being washed with pure water. Since WOx or MoxWyOz, which is a material for the thin film, is soluble in pure water and a TMAH solution, as shown in
The present disclosure is applicable to an organic EL display and the like.
This is a continuation application of PCT Application No. PCT/JP2010/004955 filed Aug. 6, 2010, designating the United States of America, the disclosure of which, including the specification, drawings and claims, is incorporated herein by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
5294869 | Tang et al. | Mar 1994 | A |
5443922 | Nishizaki et al. | Aug 1995 | A |
5688551 | Littman et al. | Nov 1997 | A |
6132280 | Tanabe et al. | Oct 2000 | A |
6284393 | Hosokawa et al. | Sep 2001 | B1 |
6309801 | Meijer et al. | Oct 2001 | B1 |
20020051894 | Yoshikawa | May 2002 | A1 |
20020158835 | Kobayashi et al. | Oct 2002 | A1 |
20030137242 | Seki | Jul 2003 | A1 |
20040075385 | Tao | Apr 2004 | A1 |
20040178414 | Frey et al. | Sep 2004 | A1 |
20050064633 | Mikoshiba | Mar 2005 | A1 |
20050093432 | Yamazaki et al. | May 2005 | A1 |
20050093434 | Suh et al. | May 2005 | A1 |
20050170208 | Yatsunami et al. | Aug 2005 | A1 |
20050208206 | Yoshikawa | Sep 2005 | A1 |
20050266763 | Kimura et al. | Dec 2005 | A1 |
20060008931 | Lee et al. | Jan 2006 | A1 |
20060139342 | Yu | Jun 2006 | A1 |
20060204788 | Yoshikawa | Sep 2006 | A1 |
20060243377 | Matsuo et al. | Nov 2006 | A1 |
20060284166 | Chua et al. | Dec 2006 | A1 |
20070029929 | Nakamura et al. | Feb 2007 | A1 |
20070099396 | Hirai et al. | May 2007 | A1 |
20070172978 | Chua et al. | Jul 2007 | A1 |
20070241665 | Sakanoue et al. | Oct 2007 | A1 |
20070290604 | Sakanoue et al. | Dec 2007 | A1 |
20080150422 | Ohara | Jun 2008 | A1 |
20080231179 | Abe et al. | Sep 2008 | A1 |
20090058268 | Yoshida et al. | Mar 2009 | A1 |
20090096364 | Fujii et al. | Apr 2009 | A1 |
20090115318 | Gregory et al. | May 2009 | A1 |
20090160325 | Yatsunami et al. | Jun 2009 | A1 |
20090206422 | Illing et al. | Aug 2009 | A1 |
20090224664 | Yoshida et al. | Sep 2009 | A1 |
20090243478 | Shoda et al. | Oct 2009 | A1 |
20090272999 | Yoshida et al. | Nov 2009 | A1 |
20090284135 | Yoshida et al. | Nov 2009 | A1 |
20090284141 | Sakanoue et al. | Nov 2009 | A1 |
20090284144 | Fujioka et al. | Nov 2009 | A1 |
20090284146 | Yoshida et al. | Nov 2009 | A1 |
20100084672 | Ueno et al. | Apr 2010 | A1 |
20100102310 | Komatsu et al. | Apr 2010 | A1 |
20100181554 | Yoshida et al. | Jul 2010 | A1 |
20100188376 | Sagawa et al. | Jul 2010 | A1 |
20100213827 | Yoshida et al. | Aug 2010 | A1 |
20100252857 | Nakatani et al. | Oct 2010 | A1 |
20100258833 | Okumoto et al. | Oct 2010 | A1 |
20100302221 | Okumoto | Dec 2010 | A1 |
20110018007 | Kasahara et al. | Jan 2011 | A1 |
20110037065 | Ueno et al. | Feb 2011 | A1 |
20110037068 | Yamazaki et al. | Feb 2011 | A1 |
20110042703 | Okumoto et al. | Feb 2011 | A1 |
20110140596 | Yoshida et al. | Jun 2011 | A1 |
20110180821 | Matsushima | Jul 2011 | A1 |
20110193107 | Takeuchi et al. | Aug 2011 | A1 |
20110198623 | Matsushima | Aug 2011 | A1 |
20110198624 | Matsushima | Aug 2011 | A1 |
20110204410 | Yada | Aug 2011 | A1 |
20120061656 | Ohuchi et al. | Mar 2012 | A1 |
20120178191 | Sakanoue et al. | Jul 2012 | A1 |
Number | Date | Country |
---|---|---|
102005007540 | Aug 2006 | DE |
2175504 | Apr 2010 | EP |
2270896 | Jan 2011 | EP |
05-163488 | Jun 1993 | JP |
10-162959 | Jun 1998 | JP |
2000-133446 | May 2000 | JP |
2000-223276 | Aug 2000 | JP |
2002-075661 | Mar 2002 | JP |
2002-530881 | Sep 2002 | JP |
2002-318556 | Oct 2002 | JP |
3369615 | Nov 2002 | JP |
2003-007460 | Jan 2003 | JP |
2003-249375 | Sep 2003 | JP |
2003-264083 | Sep 2003 | JP |
2004-139746 | May 2004 | JP |
2004-228355 | Aug 2004 | JP |
2004-234901 | Aug 2004 | JP |
2004-527093 | Sep 2004 | JP |
2004-363170 | Dec 2004 | JP |
2005-012173 | Jan 2005 | JP |
2005-197189 | Jul 2005 | JP |
2005-203339 | Jul 2005 | JP |
2005-203340 | Jul 2005 | JP |
2005-267926 | Sep 2005 | JP |
2005-268099 | Sep 2005 | JP |
2005-331665 | Dec 2005 | JP |
2006-024573 | Jan 2006 | JP |
2006-114928 | Apr 2006 | JP |
3789991 | Apr 2006 | JP |
2006-185869 | Jul 2006 | JP |
2006-253443 | Sep 2006 | JP |
2006-294261 | Oct 2006 | JP |
2006-344459 | Dec 2006 | JP |
2007-073499 | Mar 2007 | JP |
2007-095606 | Apr 2007 | JP |
2007-214066 | Aug 2007 | JP |
2007-220656 | Aug 2007 | JP |
2007-527542 | Sep 2007 | JP |
2007-287353 | Nov 2007 | JP |
2007-288071 | Nov 2007 | JP |
2007-288074 | Nov 2007 | JP |
2008-041747 | Feb 2008 | JP |
2008-053556 | Mar 2008 | JP |
2008-091072 | Apr 2008 | JP |
2008-124268 | May 2008 | JP |
2008-140724 | Jun 2008 | JP |
2008-177557 | Jul 2008 | JP |
2008-218250 | Sep 2008 | JP |
2008-241238 | Oct 2008 | JP |
2008-270731 | Nov 2008 | JP |
2009-004347 | Jan 2009 | JP |
2009-044103 | Feb 2009 | JP |
2009-048960 | Mar 2009 | JP |
2009-054582 | Mar 2009 | JP |
2009-058897 | Mar 2009 | JP |
2009-218156 | Sep 2009 | JP |
2009-239180 | Oct 2009 | JP |
2009-260306 | Nov 2009 | JP |
2009-277590 | Nov 2009 | JP |
2009-277788 | Nov 2009 | JP |
2010-009746 | Jan 2010 | JP |
2010-010670 | Jan 2010 | JP |
2010-021138 | Jan 2010 | JP |
2010-021162 | Jan 2010 | JP |
2010-033972 | Feb 2010 | JP |
2010-050107 | Mar 2010 | JP |
2010-073700 | Apr 2010 | JP |
2010-103374 | May 2010 | JP |
2010-161070 | Jul 2010 | JP |
2010-161185 | Jul 2010 | JP |
2011-040167 | Feb 2011 | JP |
2007037358 | Apr 2007 | WO |
2008120714 | Oct 2008 | WO |
2008149498 | Dec 2008 | WO |
2008149499 | Dec 2008 | WO |
2009107323 | Sep 2009 | WO |
2010032443 | Mar 2010 | WO |
2010032444 | Mar 2010 | WO |
2010058716 | May 2010 | WO |
2010070798 | Jun 2010 | WO |
2010092795 | Aug 2010 | WO |
2010092796 | Aug 2010 | WO |
2010092797 | Aug 2010 | WO |
2011021343 | Feb 2011 | WO |
2012017495 | Feb 2012 | WO |
2012017502 | Feb 2012 | WO |
2012017503 | Feb 2012 | WO |
Entry |
---|
Meyer et al., “Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism”, Applied Physics Letters, 96, 193302, pp. 1-3 (May 2010). |
Ramana et al., “Electron microscopy investigation of structural transformation in tungsten oxide (WO3) thin films”, Physica Status Solidi (a) 202, No. 10, pp. R108-R110 (Jul. 6, 2005). |
Horsley et al., “Structure of Surface Tungsten Oxide Species in the WO3/AL2O3 Supported Oxide System from X-Ray Absorption Near-edge Spectroscopy and Raman Spectroscopy”, Journal of Physical Chemistry, 91, pp. 4014-4020 (1987). |
United States Office Action in U.S. Appl. No. 13/746,481, dated Apr. 29, 2014. |
United States Office Action in U.S. Appl. No. 13/740,348, dated Apr. 29, 2014. |
United States Action in U.S. Appl. No. 13/205,773, dated Aug. 16, 2013. |
United States Office Action in U.S. Appl. No. 13/205,773, dated Jan. 10, 2013. |
Extended European Search Report (EESR) in European Patent Application No. 10741076.3, dated Feb. 25, 2013. |
United States Office Action in U.S. Appl. No. 13/205,773, dated Mar. 6, 2013. |
United States Advisory Action in U.S. Appl. No. 13/205,773, dated Jan. 15, 2014. |
United States Office Action in U.S. Appl. No. 13/205,773, dated Feb. 28, 2014. |
Tungsten Oxide, McGraw-Hill Dictionary of Scientific and Technical Terms, McGraw-Hill Book Company, Fourth Edition, p. 1979, left column, date stamped Feb. 28, 1989. |
Hyunbok Lee et al., “The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis (1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine interface”, Applied Physics Letters 93, 043308 (2008). |
Kenji Koizumi et al., The electronic structure of alpha-NOD/MoO3 interface, Dai 56 kai Ouyou Butsurigaku Kankei Rengou Kouenaki Yokoushuu (Extended Abstracts for the 56th Spring Meeting of the Japan Society of Applied Physics and Related Societies), No. 3, 30p-ZA-11, The Japan Society of Applied Physics, p. 1279 (Apr. 2, 2009). Along with a verified English language translation. |
Jingze Li et al., “Enhanced performance of organic light emitting device by insertion of conducting/insulating WO3 anodic buffer layer”, Syntetic Metals 151, pp. 141-146 (2005). |
Hiromi Watanabe et al., “Structure and Physical Property Evaluation of MoOX Thin-Film in Reactive Sputtering Method, and MoOX/α-NPD Boundary Analysis”, (Nov. 20, 2008). Along with a verified English language partial translation. |
Yasuo Nakayama et al., “MoO3 on F8BT Boundary Electron Structure: Research through Photoemission Spectrography and Meta-Stable Excited Atom Spectrometry”, (Nov. 20, 2008). Along with a verified English language partial translation. |
Min Jung Son et al., “Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopy”, Organic Electronics 10, pp. 637-642 (2009). |
Kaname Kanai et al., “Electronic structure of anode interface with molybdenum oxide buffer layer”, Organic Electronics 11, pp. 188-194 (2010). |
F. Bussolotti et al, “Surface electronic properties of polycrystalline WO3 thin films: a study by core level and valence band photoemission”, Surface Science 538, pp. 113-123 (2003). |
Qin-Ye Bao et al., “Interfacial electronic structures of WO3-based intermediate connectors in tandem organic light-emitting diodes”, Organic Electronics 11, pp. 1578-1583 (2010). |
Th. Kugler et al., “Polymer band alignment at the interface with indium tin oxide: consequences for light emitting devices”, Chemical Physics Letters 310, pp. 391-396 (1999). |
I. N. Yakovkin et al., “Driving force for the WO3(001) surface relaxation”, Surface Science 601, pp. 1481-1488 (2007). |
J. B. Pedley et al., “Thermochemical Data for Gaseous Monoxides”, Journal of Physical and Chemical Reference Data. vol. 12, No. 4, pp. 967-1032 (1983). |
M. Stolze et al., “Nature of substoichiometry in reactively DC-sputtered tungsten oxide thin films and its effect on the maximum obtainable colouration by gases”, Thin Solid Films 409, pp. 254-264 (2002). |
V. Bulovic et al., “Transparent light-emitting devices”, Nature, vol. 380, p. 29 (1996). |
U.S. Appl. No. 13/205,773 to Seiji Nishiyama, filed Aug. 9, 2011. |
U.S. Appl. No. 13/739,363 to Seiji Nishiyama et al., filed Jan. 11, 2013. |
U.S. Appl. No. 13/736,285 to Seiji Nishiyama et al., filed Jan. 8, 2013. |
U.S. Appl. No. 13/740,348 to Seiji Nishiyama et al., filed Jan. 14, 2013. |
U.S. Appl. No. 13/740,353 to Seiji Nishiyama, filed Jan. 14, 2013. |
U.S. Appl. No. 13/746,481 to Seiji Nishiyama, filed Jan. 22, 2013. |
International Search Report in PCT/JP2010/000782, dated Apr. 6, 2010. |
International Search Report in PCT/JP2010/004987, dated Sep. 7, 2010. |
International Search Report in PCT/JP2010/004959, dated Nov. 9, 2010. |
International Search Report in PCT/JP2010/004985, dated Nov. 16, 2010. |
International Search Report in PCT/JP2010/004962, dated Sep. 7, 2010. |
International Search Report in PCT/JP2010/004955, dated Sep. 7, 2010. |
International Search Report in PCT/JP2010/004986, dated Aug. 31, 2010. |
Number | Date | Country | |
---|---|---|---|
20130143346 A1 | Jun 2013 | US |
Number | Date | Country | |
---|---|---|---|
Parent | PCT/JP2010/004955 | Aug 2010 | US |
Child | 13739290 | US |