Claims
- 1. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming an insulating film over said semiconductor film; and doping an element comprising at least one of fluorine ion and chlorine ion into said semiconductor film through said insulating film, wherein said element is accelerated by applying a voltage during the doping process.
- 2. A method according to claim 1, wherein said insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxide nitride and silicon oxide nitride.
- 3. A method according to claim 1, wherein said semiconductor device is an active matrix liquid crystal display device.
- 4. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; crystallizing said semiconductor film by irradiating a laser light or an infrared light; forming an insulating film over said semiconductor film; and doping an element comprising at least one of fluorine ion and chlorine ion into said semiconductor film through said insulating film, wherein said element is accelerated by applying a voltage during the doping process.
- 5. A method according to claim 4, wherein said insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxide nitride and silicon oxide nitride.
- 6. A method according to claim 4, wherein said semiconductor device is an active matrix liquid crystal display device.
- 7. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming an insulating film over said semiconductor film; and introducing an element comprising at least one of fluorine ion, and chlorine ion into said semiconductor film through said insulating film by plasma doping, wherein said element is accelerated by applying a voltage during the introducing process.
- 8. A method according to claim 7, wherein said insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxide nitride and silicon oxide nitride.
- 9. A method according to claim 7, wherein said semiconductor device is an active matrix liquid crystal display device.
- 10. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming an insulating film over said semiconductor film; doping an element comprising at least one of fluorine ion and chlorine ion into said semiconductor film through said insulating film; and heating said semiconductor film in an atmosphere containing hydrogen, wherein said element is accelerated by applying a voltage during the doping process.
- 11. A method according to claim 10, wherein said insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxide nitride and silicon oxide nitride.
- 12. A method according to claim 10, wherein said semiconductor device is an active matrix liquid crystal display device.
- 13. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming an insulating film over said semiconductor film; and doping an element comprising at least one of fluorine ion and chlorine ion into said semiconductor film through said insulating film, wherein a projected range of said element is an interface between said semiconductor film and said insulating film, wherein said element is accelerated by applying a voltage during the doping process.
- 14. A method according to claim 13, wherein said insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxide nitride and silicon oxide nitride.
- 15. A method according to claim 13, wherein said semiconductor device is an active matrix liquid crystal display device.
- 16. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming an insulating film over said semiconductor film; and doping an element comprising at least one of fluorine ion and chlorine ion into said semiconductor film through said insulating film, wherein a projected range of said element is slightly shifted toward said semiconductor film from an interface between said semiconductor film and said insulating film, wherein said element is accelerated by applying a voltage during the doping process.
- 17. A method according to claim 16, wherein said insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, aluminum oxide nitride and silicon oxide nitride.
- 18. A method according to claim 16, wherein said semiconductor device is an active matrix liquid crystal display device.
Priority Claims (4)
Number |
Date |
Country |
Kind |
6-054865 |
Feb 1994 |
JP |
|
6-080940 |
Mar 1994 |
JP |
|
6-0929587 |
Apr 1994 |
JP |
|
6-156514 |
Jun 1994 |
JP |
|
Parent Case Info
This application is a Divisional of application Ser. No. 09/273,425 filed Mar. 19, 1999 U.S. Pat. No. 6,174,757, which itself is a Divisional of Ser. No. 08/757,292 filed Nov. 27, 1996 now U.S. Pat. No. 5,897,346; which itself is a Divisional of Ser. No. 08/395,434 filed Feb. 28, 1995 now U.S. Pat. No. 5,620,906.
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Entry |
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