Patent Application
20130052119
The present invention relates to a method for producing a transparent conductive carbon film which is used as a transparent conductive film or the like, and a transparent conductive carbon film.
A conductive planar crystal composed of sp2-bonded carbon atoms is called a “graphene film”. The graphene film is disclosed in detail in Non-Patent Literature 1. The graphene film is a basic unit of a crystalline carbon film in various forms. Examples of the crystalline carbon film formed using a graphene film include a single-layer graphene formed using a single-layer graphene film, nanographene in the form of an about a few- to ten-layer laminate of a graphene film having a nanometer size, and a carbon nano wall in which an about several- to several tens-layer graphene film laminate is oriented at an angle which is nearly vertical to a base material surface (see Non-Patent Literature 2).
Use of a crystalline carbon film formed using a graphene film as a transparent conductive film or a transparent electrode is expected because of its high light transmittance and electric conductivity.
There have hitherto been developed, as a method for producing a graphene film, a method for peeling from natural graphite, a method for eliminating silicon by a high temperature heat treatment of silicon carbide, and a method for forming on various metal surfaces. Industrial use of a transparent conductive carbon film, which uses a crystalline carbon film formed using a graphene film, has been studied, thus there has been desired a high-throughput method for forming a film having a large area.
A method for forming a graphene film by a chemical vapor deposition (CVD) method has recently been developed (Non-Patent Literatures 3 and 4). This method for forming a graphene film using a copper foil as a base material is performed by a thermal CVD method. In this technique, methane gas as a raw material gas is thermally decomposed at about 1,000° C. to form single-layer to a few-layer graphene film on a surface of the copper foil.
Kumi Yamada, Chemistry and Chemical Industry, 61(2008) pp. 1123-1127
Y. Wu, P. Qiao, T. Chong, Z. Shen, Adv. Mater. 14(2002) pp. 64-67
Xuesong Li, Weiwei Cai, Jinho An, Seyoung Kim, Junghyo Nah, Dongxing Yang, Richard Piner, Aruna Velamakanni, Inhwa Jung, Emanuel Tutuc, Sanjay K. Banerjee, Luigi Colombo, Rodney S. Ruoff, Science, Vol. 324, 2009, pp. 1312-1314.
Xuesong Li, Yanwu Zhu, Weiwei Cai, Mark Borysiak, Boyang Han, David Chen, Richard D. Piner, Luigi Colombo, Rodney S. Ruoff, Nano Letters, Vol. 9, 2009, pp. 4359-4363.
L. G. Cancado, M. A. Pimenta, B. R. A. Neves, M. S. S. Dantas, A. Jorio, Phys. Rev. Lett. 93(2004), pp. 247401—1-247401—4)
L. M. Malard, M. A. Pimenta, G. Dresselhaus and M. S. Dresselhaus, Physics Reports 473 (2009), 51-87
A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus and J. Kong, Nano Letters., Vol. 9 (2009), pp. 30-35 & Supporting Information
It is considered that the above-mentioned technique for forming a graphene film using a copper foil as a base material by a thermal CVD method is a promising method for industrially producing the transparent conductive carbon film, which is a crystalline graphene film.
However, it has been found that this technique is directed to processing by thermal CVD at high temperature close to a melting point of 1,080° C. of copper, thus causing a problem such as a change in shape of a copper foil surface due to vaporization or recrystallization of copper during deposition of a graphene film.
There is also required, as a high-throughput method for forming a film having a large area, a technique in which a film is formed while continuously supplying a roll-shaped base material placed in the atmosphere into the film-forming region, and taking up on a take-up roll placed in the atmosphere. However, it is difficult to apply the technique by the thermal CVD method since the base material reaches a high temperature.
It is required to develop a film-forming technique which is performed at low temperature within a short reaction time as compared with an existing thermal CVD method so as to achieve industrial high throughput.
The present invention has been made in view of the above circumstances, and an object of the present invention is to solve problems such as high temperature processing and long processing time, which are issues of formation of a graphene film by thermal CVD, thereby providing a technique of forming a transparent conductive carbon film, which is a crystalline graphene film, at lower temperature within a short time.
The present inventors have intensively studied so as to achieve the above object and found a novel technique for forming a graphene film at low temperature within a short time, whereby it is made possible to form a transparent conductive carbon film, which is a crystalline graphene film, at low temperature within a short time as compared with a conventional method, thus solving the above issues in the conventional technique.
The present invention has been accomplished based on these findings and includes the following.
preparing a base material wound around a first roll,
drawing the base material from the roll and introducing into a microwave surface-wave plasma CVD apparatus,
depositing a transparent conductive carbon film on a surface of the base material by the microwave surface-wave plasma CVD apparatus by setting the temperature of the base material to 500° C. or lower and the pressure to 50 Pa or less in a gas atmosphere in which an oxidation inhibitor as an additive gas for suppressing oxidation of the surface of the base material is added carbon-containing gas or a mixed gas of a carbon-containing gas and an inert gas,
taking out the base material with the transparent conductive carbon film deposited thereon from the microwave surface-wave plasma CVD apparatus, and
taking up the base material with the transparent conductive carbon film deposited on the base material on a second roll.
According to the method of the present invention, it becomes possible to solve problems such as high temperature processing and long processing time, which are issues of formation of a graphene film by conventional thermal CVD, thereby it is made possible to form a transparent conductive carbon film, which is a crystalline graphene film, at lower temperature within a short time. According to the microwave surface-wave plasma CVD method of the present invention, it is possible to reduce mixing of silicone-containing coarse particles into graphene as compared with a thermal CVD method as a conventional method, thus enabling suppression of segregation of impurities containing silicone.
The transparent conductive carbon film of the present invention can be obtained by mainly employing specific production conditions. In order to produce a transparent conductive carbon film, it is desired to use a surface-wave microwave plasma method capable of forming a large area film and to select the concentration and the molar ratio of a raw gas, the reaction time and the like, and to operate at comparatively low temperature.
In order to apply a CVD treatment for formation of a transparent conductive carbon film without causing a change in surface shape of a copper foil substrate and vaporization of a copper foil, it is preferable to, perform a treatment at the temperature which is sufficiently lower than a melting point (1,080° C.) of copper.
A usual microwave plasma CVD treatment is performed under the pressure of 2×103 to 1×104 Pa. Since plasma is less likely to diffuse under the above pressure and plasma concentrates in a narrow region, the temperature of a neutral gas in plasma becomes 1,000° C. or higher. Therefore, the temperature of the copper foil substrate is raised to 800° C. or higher, resulting in enhanced vaporization of copper from a copper foil surface. Accordingly, it is impossible to apply the microwave plasma CVD treatment to the production of a transparent conductive carbon film. There is a limitation on uniform expansion of a plasma region, and it is difficult to form a highly uniform transparent conductive carbon film in a large area.
Accordingly, a plasma treatment under lower pressure is required so as to maintain the temperature of a copper foil substrate during film formation at low temperature and to form a highly uniform transparent conductive carbon film in a large area.
In the present invention, microwave surface-wave plasma capable of stably generating and maintaining plasma even under 102 Pa or less was generated and employed in a CVD treatment.
The microwave surface-wave plasma is disclosed in detail, for example, in the literature “Hideo Sugai, Plasma Electronics, Ohmsha, Ltd. 2000, p. 124-125”.
In this, it was possible to control to a temperature which is sufficiently lower than a melting point of a copper foil substrate and to generate uniform plasma in a large area measuring 380 mm and 340 mm or more.
As a result of diagnosis of plasma by a Langmuir Probe method (single probe method), it was confirmed that the plasma is surface-wave plasma capable of being generated and maintained by surface wave since the measured electron density is from 1011 to 1012/cm3 and is more than 7.4×1010/cm3.
This Langmuir Probe method is disclosed in detail, for example, in the literature “Hideo Sugai, Plasma Electronics, Ohmsha, Ltd 2000, p. 58”.
With respect to the conditions of a CVD treatment used in the present invention, the substrate temperature is 500° C. or lower, and preferably from 200° C. to 450° C.
The pressure is 50 Pa or less, preferably from 2 to 50 Pa, and more preferably from 5 to 20 Pa.
There is no particular limitation on the treatment time, and the treatment time was from about 1 to 600 seconds, and preferably from about 1 to 60 seconds. According to the treatment time controlled to such an extent, a transparent conductive carbon film having high light transmittance and electric conductivity can be obtained.
In the present invention, a raw gas (reactant gas) used in a microwave plasma CVD treatment is a carbon-containing gas or a mixed gas of the carbon-containing gas and an inert gas. The carbon-containing gas includes methane, ethylene, acetylene, ethanol, acetone, methanol and the like. The inert gas includes helium, neon, argon and the like.
In a carbon-containing gas or a mixed gas of the carbon-containing gas and an inert gas, the concentration of the carbon-containing gas is from 30 to 100 mol %, and preferably from 60 to 100 mol %. It is not preferable that the concentration of the carbon-containing gas be less than the above range since a problem such as a decrease in electric conductivity of a transparent conductive carbon film occurs.
In the present invention, it is preferable to use a gas in which an oxidation inhibitor for suppressing oxidation of a surface of the base material is added to the carbon-containing gas or the mixed gas. Hydrogen gas is preferably used as the additive gas, and acts as an oxidation inhibitor of a surface of a copper foil base material during a CVD treatment, thus exerting an action of promoting formation of a high transparent conductive carbon film having high electric conductivity. The addition amount of the hydrogen gas is preferably from 1 to 30 mol %, and more preferably from 1 to 20 mol %, based on the carbon-containing gas or the mixed gas.
The present invention will be described below by way of Examples, but the present invention is not limited to these Examples. The evaluation methods used in Examples will be described.
Raman scattering spectrum of a transparent conductive carbon film formed by the technique of the present invention was measured.
The band, which is important in the evaluation by Raman scattering spectroscopy of a transparent conductive carbon film, which is a crystalline graphene film, includes 2D band, G band, D band and D′ band. The G band is originated from a normal six-membered ring, and the 2D band is originated from overtone of the D band. The D band is also a peak attributed to defects of a normal six-membered ring. It is considered that the D′ band is also a peak induced from defects, and is attributed to the edge portion of a laminate of an about several- to several tens-layer graphene film (above-mentioned Non-Patent Literature 5).
In a case both peaks of G band and 2D band are observed in the Raman scattering spectrum, the film is identified as a graphene film (above-mentioned Non-Patent Literature 3).
The above-mentioned Non-Patent Literature 6 discloses that peak positions of 2D band, G band, D band and D′ band depend on the number of graphene films, and the excitation wavelength of laser during measurement of the Raman scattering spectrum. For example, in the case of laser having an excitation wavelength of 514.5 nm, peak positions of 2D band, G band, D band and D′ band are generally about 2,700 cm−1, 1,582 cm−1, 1,350 cm−1 and 1,620 cm−1. It is generally known that when the number of layers of graphene increases, the 2D band shifts to the high wavenumber side and the full width at half maximum extends. Furthermore, when the excitation wavelength of laser decreases, the 2D band shifts to the high wavenumber side.
Samples and measurement conditions used in the measurements in the respective Examples, detailed analysis of the transmittance spectrum will be described in the respective Examples.
Light transmittance of a transparent conductive carbon film formed by the technique of the present invention was measured.
Samples obtained by removing a transparent conductive carbon film formed on a copper foil base material using the technique of the present invention from the copper foil and transferring the transparent conductive carbon film on a glass substrate were used. A substrate made of quartz glass measuring 10 mm in diameter and 1 mm in thickness or soda glass measuring 26 mm in width, 75 mm in length and 1 mm in thickness was used as the glass substrate.
A light transmittance measurement apparatus used is Hitachi spectrophotometer U-1400, and the light transmittance at a wavelength range of 200 nm to 2,000 nm was measured. In the measurement, first, a light transmission spectrum of a quartz glass substrate alone (with no transparent conductive carbon film transferred thereon) was measured. Next, a light transmission spectrum of a quartz glass substrate with a transparent conductive carbon film transferred thereon was measured. The light transmission spectrum of the transparent conductive carbon film per se was determined by subtracting the light transmission spectrum of the quartz glass substrate with no transparent conductive carbon film transferred thereon from the light transmission spectrum of the quartz glass substrate with a transparent conductive carbon film transferred thereon. In the measurement and analysis, UV Solutions program for Hitachi spectrophotometer as measurement analysis computer software for the present apparatus was used.
Even in the case of using a soda glass substrate, Hitachi spectrophotometer U-1400 was used as the light transmittance measurement apparatus, and the light transmittance at a wavelength range of 200 nm to 2,000 nm was measured. In the first, a light transmission spectrum of a soda glass substrate alone (with no transparent conductive carbon film transferred thereon) was measured. Next, a light transmission spectrum of a soda glass substrate with a transparent conductive carbon film transferred thereon was measured. The light transmission spectrum of the transparent conductive carbon film per se was determined by subtracting the light transmission spectrum of the soda glass substrate with no transparent conductive carbon film transferred thereon from the light transmission spectrum of the soda glass substrate with a transparent conductive carbon film transferred thereon. In the measurement and analysis, UV Solutions program for Hitachi spectrophotometer as measurement analysis computer software for the present apparatus was used.
The light transmittance was evaluated by determining an average light transmittance at a wavelength of 400 nm to 800 nm in a visible range of the measured spectrum.
Electric conductivity of a transparent conductive carbon film formed by the technique of the present invention was measured.
Samples obtained by removing a transparent conductive carbon film formed on a copper foil or aluminum foil base material using the technique of the present invention from the copper foil or aluminum foil and transferring the transparent conductive carbon film on an insulator substrate were used. A substrate made of polydimethylsiloxane (PDMS) (SILPOT 184 W/C, manufactured by Dow Corning Toray Co., Ltd.), quartz glass or soda glass was used as the insulator substrate.
In the evaluation of the electric conductivity, a low resistivity meter (Loresta-GPMCP-T600 manufactured by Mitsubishi Chemical Corporation) with a square probe (MCP-TPQPP, with a distance between electrodes of 1.5 mm) was used. The upper limit of a voltage to be applied between electrodes was set to 10 V or 90 V. Sheet resistance (surface resistivity) was measured by separating samples into lattice-shaped compartments, each measuring 2 cm in width, and pressing the square probe against the transparent conductive carbon film.
Cross-section of a transparent conductive carbon film formed by the technique of the present invention was observed by an electron microscope.
Each sample for observation was sectioned by a focused ion beam (FIB) method after coating amorphous carbon on a transparent conductive carbon film. Xvision200TB manufactured by SII NanoTechnology Inc. was used as an apparatus. In transmission image observation by an electron microscope, H-9000UHR, manufactured by Hitachi, Ltd. was used and transmission image observation was carried out under the conditions of an acceleration voltage of 300 kV.
In the Present Example, a copper foil measuring 100 mm×100 mm and 33 μm in thickness and having surface roughness (arithmetic average roughness: Ra, the same shall apply hereinafter) of 54 nm was used as a base material, and a plasma CVD treatment was applied using a microwave surface-wave plasma CVD apparatus.
Details of a microwave surface-wave plasma CVD treatment used in the present Example will be described below.
The microwave surface-wave plasma CVD apparatus used in the present invention is composed of a reaction vessel (110) made of metal, an upper end of which is opened; a quartz window (103) for introducing microwave, attached to the upper end portion of the reaction vessel (110) in an airtight manner through a supporting member (104) made of metal; and a rectangular microwave waveguide (102) with a slot attached to the upper portion thereof.
In the present Example, a copper foil base material is disposed in the interior of the reaction vessel (110) and a CVD treatment is performed. The treatment procedure is as follows.
The copper foil base material (105) was disposed on a sample stage (106) provided inside a plasma generation chamber (101) in the microwave surface-wave plasma CVD reaction vessel (110). Next, the reaction chamber was evacuated to 1×10−3 Pa or less through an exhaust tube (108). A cooling water tube (111) is wound around the reaction chamber, and the reaction chamber was cooled by supplying cooling water thereto. The sample stage is made of copper and a sample was cooled by supplying cooling water through a supply/drain tube (107) of cooling water.
The height of the sample stage was adjusted such that a distance between a quartz window (103) and a copper foil base material becomes 50 mm.
Next, 100 SCCM of hydrogen gas was introduced into the reaction chamber through a gas introduction tube (109) for CVD treatment and the pressure inside the reaction chamber was maintained at 20 Pa using a pressure control valve connected to the exhaust tube (108).
Plasma was generated at microwave power of 3.0 kW and a surface treatment of a copper foil base material (105) with plasma was performed. The treatment time was 5 minutes. The temperature of a substrate during the plasma treatment was measured by bringing an alumel-chromel thermocouple into contact with a substrate surface. The temperature of the copper foil base material throughout the plasma CVD treatment was about 500° C. An oxide film and pollutants on the copper foil surface were removed by this plasma treatment.
Next, a gas for CVD treatment was introduced into the reaction chamber through the gas introduction tube (109) for CVD treatment. The gas for CVD treatment contained 25 SCCM of methane gas, 12.5 SCCM of argon gas and 5.0 SCCM of hydrogen gas and, therefore, the concentration of each raw gas was as follows: methane gas; 58.8 mol %, argon gas; 29.4 mol %, and hydrogen gas; 11.8 mol %. The pressure inside the reaction chamber was maintained at 10 Pa using a pressure control valve connected to the exhaust tube (108).
Plasma was generated at microwave power of 3.0 kW and a plasma CVD treatment of the copper foil base material (105) was performed. The temperature of the substrate during the plasma treatment was measured by bringing the alumel-chromel thermocouple into contact with the substrate surface. The temperature of the copper foil base material throughout the plasma CVD treatment was about 500° C. When the temperature of the copper foil base material during the plasma treatment becomes higher, excess action of plasma is exerted on the copper foil base material. Namely, excess etching action may be sometimes exerted by exposing the copper foil base material to plasma, thus melting the copper foil, resulting in disappearance due to vaporization. Accordingly, it is essential to control the temperature of the base material sufficiently carefully. In order to prevent disappearance of the copper foil, it is preferable to maintain at 500° C. or lower. As a result of the above plasma CVD treatment, a transparent conductive carbon thin film, which is a crystalline graphene film, was laminated on the copper foil base material, thus forming the laminate of a copper foil and a transparent conductive carbon thin film. The plasma CVD treatment time was 5 minutes.
Raman scattering spectrum of a transparent conductive carbon film obtained in the present Example was measured.
Samples obtained by removing a transparent conductive carbon film formed on a copper foil base material by the above technique and transferring the transparent conductive carbon film onto a silicon wafer with an oxide film manufactured by SUMCO Corporation were used. In the measurement, Laser Raman Spectrometer NRS-2100 manufactured by JASCO Corporation was used, and visible laser having a wavelength of 514.5 nm (Ar ion laser GLG2169, manufactured by Showa Optronics Co., Ltd.) was used as excitation light. Output of a laser source was 50 mW and a reducer was not used. An aperture size was 200 μm, and an object lens with magnification of 100 times was used. The exposure time was 10 seconds, and the measured values (five times) were accumulated to obtain a spectrum. Calibration of this apparatus was performed by a single crystal silicone wafer manufactured by SUMCO Corporation. Control was made such that the peak position of Raman spectrum in this standard sample becomes Raman shift 520.5 cm−1. In the measurement and analysis, standard computer software Spectra Manager for Windows (registered trademark) 95/98/NT ver.1.02.07 [Build 3] manufactured by JASCO Corporation was used.
An example of the measured Raman scattering spectrum of the transparent conductive carbon film is shown in
In
It is possible to identify the number of graphene films using the relative intensity of peaks of the 2D band and G band (above-mentioned Non-Patent Literature 7). As shown in
As mentioned above, in an example of a transparent conductive carbon film shown in
Next, light transmittance of a transparent conductive carbon film obtained in the present Example was measured.
Samples obtained by removing a transparent conductive carbon film formed on a copper foil base material obtained in the present Example from the copper foil and transferring the transparent conductive carbon film on a quartz glass substrate measuring 10 mm in diameter and 1 mm in thickness were used.
A light transmittance measurement apparatus used is Hitachi spectrophotometer U-1400, and the light transmittance at a wavelength range of 200 nm to 2,000 nm was measured. In the measurement, first, a light transmission spectrum of a quartz glass substrate alone (with no transparent conductive carbon film transferred thereon) was measured. Next, a light transmission spectrum of a quartz glass substrate with a transparent conductive carbon film transferred thereon was measured. The light transmission spectrum of the transparent conductive carbon film per se was determined by subtracting the light transmission spectrum of the quartz glass substrate with no transparent conductive carbon film transferred thereon from the light transmission spectrum of the quartz glass substrate with a transparent conductive carbon film transferred thereon. In the measurement and analysis, UV Solutions program for Hitachi spectrophotometer as measurement analysis computer software for the present apparatus was used.
An example of the measured light transmission spectrum of the transparent conductive carbon film is shown in
Electric conductivity of a transparent conductive carbon film obtained in the present Example was measured.
After fixing a transparent conductive carbon film formed on a copper foil base material measuring 24 cm in width and 21 cm in length obtained in the present Example on 2 mm thick polydimethylsiloxane (PDMS) (SILPOT 184 W/C, manufactured by Dow Corning Toray Co., Ltd.), only the copper foil was removed and the carbon films on PDMS as samples were used In the evaluation of the electric conductivity, a low resistivity meter (Loresta-GP MCP-T600 manufactured by Mitsubishi Chemical Corporation) with a square probe (MCP-TPQPP, with a distance between electrodes of 1.5 mm) was used. The upper limit of a voltage to be applied between electrodes was set to 10 V or 90 V. Sheet resistance (surface resistivity) was measured by separating samples into lattice-shaped compartments, each measuring 2 cm in width, and pressing the square probe against the transparent conductive carbon film. With respect to the obtained sheet resistance values, a contour map was drawn using graph software (OriginPro 7.5J, manufactured by Origin Lab.).
An example of the measured sheet resistance of the transparent conductive carbon film is shown in
In the present Example, an ethylene gas was used as a carbon-containing gas and a plasma CVD treatment was applied using a microwave surface-wave plasma CVD apparatus shown in
The treatment procedure in the present Example is as follows.
The copper foil base material (105) was disposed on a sample stage (106) provided inside a plasma generation chamber (101) in the microwave surface-wave plasma CVD reaction vessel (110). Next, the reaction chamber was evacuated to 1×10−3 Pa or less through an exhaust tube (108). A cooling water tube (111) is wound around the reaction chamber, and the reaction chamber was cooled by supplying cooling water thereto. The sample stage is made of copper and a sample was cooled by supplying cooling water through a supply/drain tube (107) of cooling water.
The height of the sample stage was adjusted such that a distance between a quartz window (103) and a copper foil base material becomes 50 mm.
Next, a gas f or CVD treatment was introduced into the reaction chamber through a gas introduction tube (109) for CVD treatment. The gas for CVD treatment contained 15 SCCM of ethylene gas, 12.5 SCCM of argon gas and 5.0 SCCM of hydrogen gas and, therefore, the concentration of each raw gas was as follows: ethylene gas; 46.1 mol %, argon gas; 38.5 mol %, and hydrogen gas; 15.4 mol %. The pressure inside the reaction chamber was maintained at 10 Pa using a pressure control valve connected to the exhaust tube (108).
Plasma was generated at microwave power of 3.0 kW and a plasma CVD treatment of the copper foil base material (105) was performed. The temperature of the substrate during the plasma treatment was measured by bringing the alumel-chromel thermocouple into contact with the substrate surface. The temperature of the copper foil base material throughout the plasma CVD treatment was about 400° C. When the temperature of the copper foil base material during the plasma treatment becomes higher, excess act ion of plasma is exerted on the copper foil base material. Namely, excess etching action may be sometimes exerted by exposing the copper foil base material to plasma, thus melting the copper foil, resulting in disappearance due to vaporization. Accordingly, it is essential to control the temperature of the base material sufficiently carefully. In order to prevent disappearance of the copper foil, it is preferable to maintain at 500° C. or lower. As a result of the above plasma CVD treatment, a transparent conductive carbon thin film, which is a crystalline graphene film, was laminated on the copper foil base material, thus forming a laminate of a copper foil and a transparent conductive carbon thin film. The plasma CVD treatment time was 10 minutes.
Raman scattering spectrum of the obtained transparent conductive carbon film was measured.
As samples, the transparent conductive carbon films formed on the copper base material by the above technique were used. The wavelength of laser for excitation was 638 nm, the spot size of the laser beam was 1 μm in diameter, a spectrometer was configured with 600 gratings, output of a laser source was 9 mW, and a reducer was not used. An aperture size was 100 μm, a slit size was 100 μm, and an object lens with magnification of 100 times was used The exposure time was 30 seconds, and the measured values (five times) were accumulated to obtain a spectrum.
An example of the measured Raman scattering spectrum of the transparent conductive carbon film is shown in
As shown in the drawing, peaks were observed at 2D band (2658.8 cm−1), G band (1580.0 cm−1), D band (1328.1 cm−1), and D′ band (1612.1 cm−1).
In
As mentioned above, according to the technique of the present invention, it is possible to form a transparent conductive carbon film, which is a crystalline graphene film, using ethylene as raw gas.
In the present Example, an aluminum foil measuring 25 cm×20 cm and 12 μm in thickness was used as a base material and a CVD treatment is performed using a microwave surface-wave plasma CVD apparatus shown in
The treatment procedure in the present Example is as follows.
The copper foil base material (105) was disposed on a sample stage (106) provided inside a plasma generation chamber (101) in the microwave surface-wave plasma CVD reaction vessel (110). Next, the reaction chamber was evacuated to 1×10−3 Pa or less through an exhaust tube 108). A cooling water tube (111 is wound around the reaction chamber, and the reaction chamber was cooled by supplying cooling water thereto. The sample stage is made of copper and a sample was cooled by supplying cooling water through a supply/drain tube (107) of cooling water.
The height of the sample stage was adjusted such that a distance between a quartz window (103) and an aluminum foil base material becomes 91 mm.
Next, 100 SCCM of hydrogen gas was introduced into the reaction chamber through a gas introduction tube (109) for CVD treatment and the pressure inside the reaction chamber was maintained at 20 Pa using a pressure control valve connected to the exhaust tube (108).
Plasma was generated at microwave power of 3.0 kW and a surface treatment of an aluminum foil base material (105) with plasma was performed. The treatment time was 5 minutes. The temperature of a substrate during the plasma treatment was measured by bringing an alumel-chromel thermocouple into contact with a substrate surface. The temperature of the aluminum foil base material throughout the plasma CVD treatment was about 310° C. An oxide film and pollutants on the aluminum foil surface were removed by this plasma treatment.
Next, the height of the sample stage was adjusted such that a distance between a quartz window (103) and an aluminum foil base material becomes 81 mm, and a gas for CVD treatment was introduced into the reaction chamber through a gas introduction tube (109) for CVD treatment. The gas for CVD treatment contained 25 SCCM of methane gas, 12.5 SCCM of argon gas and 0 SCCM of hydrogen gas and, therefore, the concentration of each raw gas was as follows: methane gas; 66.7 mol %, argon gas; 33.3 mol %, and hydrogen gas; 0 mol %. The pressure inside the reaction chamber was maintained at 10 Pa using a pressure control valve connected to the exhaust tube (108).
Plasma was generated at microwave power of 3.0 kW and a plasma CVD treatment of the aluminum foil base material (105) was performed. The temperature of the substrate during the plasma treatment was measured by bringing the alumel-chromel thermocouple into contact with the substrate surface. The temperature of the aluminum foil base material throughout the plasma CVD treatment was about 445° C. When the temperature of the aluminum foil base material during the plasma treatment becomes higher, excess action of plasma is exerted on the aluminum foil base material. Namely, excess etching action may be sometimes exerted by exposing the aluminum foil base material to plasma, thus melting the aluminum foil, resulting in disappearance due to vaporization. Accordingly, it is essential to control the temperature of the base material sufficiently carefully. In order to prevent disappearance of the aluminum foil, it is preferable to maintain at 450° C. or lower. As a result of the above plasma CVD treatment, a transparent conductive carbon thin film, which is a crystalline graphene film, was laminated on the aluminum foil base material, thus forming a laminate of an aluminum foil and a transparent conductive carbon thin film. The plasma CVD treatment time was 3 minutes.
Raman scattering spectrum of a transparent conductive carbon film produced by the technique of the present invention was measured.
Samples were subjected to the measurement in a state where a transparent conductive carbon film formed on an aluminum foil base material by the technique of the present invention, is in contact with the aluminum foil base material. A measurement apparatus is Model XploRA, manufactured by HORIBA, Ltd. The wavelength of laser for excitation was 532 nm, the spot size of the laser beam was 1 μm in diameter, a spectrometer was configured with 699 gratings, output of a laser source was 18.6 mW, and a reducer was not used. An aperture size was 100 μm, a slit size was 100 μm, and an object lens with magnification of 100 times was used. The exposure time was 20 seconds, and the measured values (three times) were accumulated to obtain a spectrum.
An example of the measured Raman scattering spectrum of the transparent conductive carbon film is shown in
As shown in the drawing, peaks were observed at 2D band (2,709 cm−1), G band (1,587 cm−1), D band (1,353 cm−1), and D′ band (1,623 cm−1).
In
In the case of graphite, which is a bulky crystalline carbon material, the 2D band shows a shape having a shoulder on the low wavenumber side. In the case of a graphene film, it shows a symmetrical shape. The peak width of the left half of a peak and that of the right half of a peak of the 2D band in
As mentioned above, according to the technique of the present invention in which the temperature is low and the reaction time is short as compared with a conventional thermal CVD method, it is possible to form a transparent conductive carbon film, which is a crystalline graphene film, using an aluminum foil as a base material.
In the present Example, a transparent conductive carbon film was synthesized using a large area plasma apparatus in which four microwave launchers for generating plasma are arranged and large-scale microwave surface-wave plasma is achieved (plasma treatment region: measuring 600 mm×400 mm in cross-sectional area and 200 mm in height).
A sectional view of the apparatus is shown in
In the present Example, a copper foil measuring 15 mm×15 mm and 25 μm in thickness and having surface roughness (Ra) of 54 nm was disposed in a reaction chamber (206), and a CVD treatment was performed. Test conditions are as follows.
Microwave power was set to 4.5 kW/one microwave launcher, and the pressure inside the discharge vessel was set to 5 Pa. A gas for CVD treatment contained 29 SCCM of methane gas, namely, 100 mol % of methane gas. In the present Example, a plasma CVD treatment was performed by varying a distance between a quartz window (203) and a copper foil base material within a range from 40 mm to 190 mm.
Since the sample stage (205) is not provided with a cooling unit, the copper foil base material was heated by heat of plasma. Throughout the plasma CVD treatment, the temperature of the copper foil base material was 280° C., 290° C. or 340° C. at the position which is 190 mm, 160 mm or 130 mm away from the quartz window, and no damage was observed in the copper foil base material after the CVD treatment. The temperature was higher than 500° C. in a partial region at the position which is 40 mm away from the quartz window and, after the plasma CVD treatment, a surface of the copper foil base material was partially melted and vaporized, resulting in deformation and disappearance.
As a result of the above plasma CVD treatment, a transparent conductive carbon thin film was laminated on a copper foil base material, thus forming a laminate of a copper foil and a transparent conductive carbon thin film.
With respect to the plasma CVD treatment time, a transparent conductive carbon thin film having a thickness of several layers could be deposited by a treatment for 2 seconds or 5 minutes at the position which is 50 mm or 190 mm away from the quartz window.
A copper foil measuring 15 mm×15 mm and 25 μm in thickness and having surface roughness (Ra) of 54 nm was disposed in a reaction chamber (206) in
Microwave power was set to 3 kW/one microwave launcher, and the pressure inside the discharge vessel was set to 5 Pa. The gas for CVD treatment contained 30 SCCM of methane gas, 10 SCCM of hydrogen gas and 20 SCCM of argon gas and, therefore, the concentration of each raw gas was as follows: methane gas; 50 mol %, hydrogen gas; 16.7%, and argon gas; 33.3%. In the present Example, a plasma. CVD treatment was performed at a distance between a quartz window (203) and a rolled copper foil base material of 110 mm.
Since the sample stage (205) is not provided with a cooling unit, the copper foil base material was heated by heat of plasma. In the plasma CVD treatment, the temperature of the rolled copper foil base material was 374° C., and no damage was observed in the rolled copper foil base material after the CVD treatment.
As a result of the above plasma CVD treatment, a transparent conductive carbon thin film was laminated on the copper foil base material, thus forming a laminate of a copper foil and a transparent conductive carbon thin film. The plasma CVD treatment time was 30 seconds.
Raman scattering spectrum of a transparent conductive carbon film produced by the technique of the present invention was measured.
Samples were subjected to the measurement in a state where a transparent conductive carbon film formed on a copper foil base material by the technique of the present invention is in contact with the copper foil base material. A measurement apparatus is Model XploRA, manufactured by HORIBA, Ltd. The wavelength of laser for excitation was 638 nm, the spot size of the laser beam was 1 micron in diameter, a spectrometer was configured with 699 gratings, output of a laser source was 11.8 mW, and a reducer was not used. An aperture size was 100 μm, a slit size was 100 μm, and an object lens with magnification of 100 times was used. The exposure time was 20 seconds, and the measured values (three times) were accumulated to obtain a spectrum.
An example of the measured Raman scattering spectrum of the transparent conductive carbon film is shown in
As shown in the drawing, peaks were observed at 2D band (2,657 cm−1), G band (1,587 cm−1), D band (1,326 cm−1), and D′ band (1,612 cm−1). It is possible to identify the number of graphene films using the relative intensity of peaks of the 2D band and G band (see Non-Patent Literature 7). As shown in
In
In the case of graphite, which is a bulky crystalline carbon material, the 2D band shows a shape having a shoulder on the low wavenumber side. In the case of a graphene film, it shows a symmetrical shape. The peak width of the left half of a peak and that of the right half of a peak of the 2D band in
In the present Example, a CVD treatment was performed using a large area plasma apparatus in which four microwave launchers for generating plasma shown in
In a microwave surface-wave plasma CVD method, a copper foil measuring 100 mm×50 mm and 33 μm in thickness and having surface roughness (Ra) of 54 nm was disposed in a plasma CVD reaction vessel, and the height of the sample stage was adjusted such that a distance between a quartz window and a copper foil base material becomes 160 mm. The gas for plasma CVD treatment contained 30 SCCM of methane gas, 20 SCCM of argon gas and 10 SCCM of hydrogen gas, and the gas pressure inside the reaction vessel was maintained at 3 Pa using a pressure control valve connected to a drain tube. Plasma was generated at microwave power of 18 kW and a plasma CVD treatment of a copper foil base material was performed. The plasma CVD treatment time was 30 seconds. The temperature of a base material was maintained at 450° C. or lower.
A difference between graphene obtained by a microwave surface-wave plasma CVD method of the present Example and graphene obtained by a thermal CVD method was observed.
The thermal CVD method was performed using an evacuatable quartz tube furnace which uses a quartz tube as a furnace tube. A schematic diagram thereof is shown in
A copper foil base material was placed at the center of the quartz tube, followed by evacuation up to 10−4 Pa or less. After heating to 1,000° C. while allowing 2 SCCM of hydrogen gas to flow, 35 SCCM of methane gas was added while maintaining at 1,000° C., and a thermal CVD treatment of the copper foil base material was performed. The thermal CVD treatment time was 20 minutes.
By the above-mentioned two methods, a transparent conductive carbon thin film, which would serve as a crystalline carbon film formed by a graphene film, was laminated on a copper foil base material, thus forming a laminate of a copper foil and a transparent conductive carbon thin film. With respect to the thus produced laminate, the copper foil was removed by dissolving in a 5% by weight ferric chloride solution, and then only the transparent conductive carbon film was subjected to impurity analysis by energy dispersive X-ray spectroscopy (EDS) of a transition electron micrograph (TEM). Bright field images of the film obtained by a microwave surface-wave plasma CVD method and a thermal CVD method are respectively shown in
From the bright field images shown in
In the case of the microwave surface-wave plasma CVD method, 7.1 to 9.0 atom % of silicone and 17 to 20 atom % of oxygen were contained as impurities. Standard deviations were respectively 0.95 and 1.5. An atomic ratio obtained by dividing atom % of oxygen by atom % of silicone was 1.9 to 2.8, and standard deviation was 0.45.
In contrast, in the case of the thermal CVD method, the content of silicone was dispersed in a range from 2.9 to 20.7 atom % and the content of oxygen was dispersed in a range from 1.9 to 57.1 atom %. Standard deviations were respectively 7.1 and 23. An atomic ratio obtained by dividing atom % of oxygen by atom % of silicone was dispersed in a range from 0.6 to 2.8, and standard deviation was 0.9.
The above test results reveal that the microwave surface-wave plasma CVD method can remarkably reduce mixing of Si-containing coarse particles of about 35 nm or more in the film and apparently suppress segregation of impurities including Si as compared with the thermal CVD method which is a conventional method.
In the present Example, a transparent conductive carbon thin film was synthesized by using a copper foil base material measuring 100 mm×50 mm and 33 μm in thickness and having surface roughness (Ra) of 54 nm, using a CVD apparatus shown in
As a result of the above plasma CVD treatment, a transparent conductive carbon thin film, which is a crystalline graphene film, was laminated on the copper foil base material, thus forming a laminate of a copper foil and a transparent conductive carbon thin film.
Transmission electron micrograph (TEM) measurement of cross-section of the laminate of a copper foil and a transparent conductive carbon thin film produced by the technique of the present invention was performed. The results are shown in
From the TEM measurement results shown in
The above test results reveal that it is possible to control characteristics of a transparent conductive carbon thin film composed of graphene sheets, which is synthesized by a plasma CVD treatment, by controlling a surface state of a copper foil base material.
In the present Example, a copper foil measuring 23 cm in width, 20 cm in length and 33 μm in thickness and having surface roughness (Ra) of 54 nm was used as a base material, and a plasma CVD treatment was performed using a CVD apparatus shown in
Spatial uniformity of electric conductivity of a transparent conductive carbon film produced by the above plasma CVD treatment was evaluated. After fixing the transparent conductive carbon film produced so as to evaluate electric conductivity to an acrylic plate, a transparent conductive carbon film was transferred onto the acrylic plate by removing only a copper foil. A photograph of a copper foil measuring 23 cm in width and 20 cm in length after a plasma CVD treatment, and a photograph of a transparent conductive carbon film transferred onto an acrylic plate are shown in
Sheet resistance (surface resistivity) of the transparent conductive carbon film transferred onto the acrylic plate shown in
The transparent conductive carbon film exhibits resistance in a range from 1.0 kΩ/sq to 4.2 kΩ/sq in an area measuring 23 cm in width and 20 cm in length. An area distribution rate of 1.0 to 3.0 kΩ/sq is 79.2%, an area distribution rate of 1.0 to 3.5 kΩ/sq is 95.8%, and an area distribution rate of 1.0 to 4.0 kΩ/sq is 99.2%.
Using the technique for forming a transparent conductive carbon film by microwave surface-wave plasma CVD shown in
This continuous film-forming apparatus is composed of a plasma CVD area for formation of a transparent conductive carbon film, and a differential evacuation portion. The roll-shaped copper foil base material is disposed in the atmosphere. The pressure herein is atmospheric pressure, i.e., about 1×105 Pa. A copper foil base material is supplied into the differential evacuation portion through an orifice for differential evacuation. The differential evacuation portion is evacuated by a mechanical booster pump and an auxiliary pump, and the pressure is maintained at about 1×102 Pa. For example, when using a copper foil measuring 400 mm in width and 33 μm in thickness and having surface roughness (Ra) of 54 nm, an orifice having a shape measuring 400 mm in width, 100 μm in height and 10 cm in length is used and a differential evacuation chamber is maintained at about 1×102 Pa by evacuating using a mechanical booster pump at an exhaust speed of 100 L/sec. The temperature of the base material is maintained at 450° C. or lower.
The copper foil supplied into the differential evacuation chamber is supplied into a plasma CVD area through an orifice having the same shape as mentioned above disposed between the differential evacuation chamber and the plasma CVD area. In the plasma CVD area, a raw gas required for formation of a film contains 50 SCCM of methane gas, 33 SCCM of argon gas and 17 SCCM of hydrogen gas. The pressure inside a reaction vessel is maintained at about 10 Pa by a pressure control valve. Plasma was generated at microwave power of 18 kW and a plasma CVD treatment of the copper foil base material was performed. The height of the sample stage was adjusted such that a distance between a quartz window and a copper foil base material becomes 160 mm.
While the copper foil base material passes through the plasma CVD area, a transparent conductive carbon film is formed. In a case the length of the plasma CVD area is set to about 30 cm, the copper foil base material is supplied at a rate of about 10 cm per second.
The copper foil base material, which formed a transparent conductive carbon film in the plasma CVD area, is supplied into the differential evacuation portion through an orifice for differential evacuation, supplied into the atmosphere through the subsequent orifice for differential evacuation, and then taken up on a roll. As mentioned above, use of the technique of the, present invention enables continuous formation of a transparent conductive carbon film on a copper foil base material, and this technique is an extremely advantageous technique from an industrial point of view.
In the present Example, a copper foil measuring 297 mm in width and 33 μm in thickness and having surface roughness (Ra) of 54 nm was used as a base material, and a plasma CVD treatment was applied using a microwave surface-wave plasma CVD apparatus.
As shown in the drawing, the apparatus used in the present Example is another example of the continuous film-forming apparatus, in which a roll-shaped base material is disposed in a vacuum vessel (plasma CVD area).
Details of the microwave surface-wave plasma CVD treatment used in the present Example will be described below.
It is necessary for the microwave surface-wave plasma CVD apparatus used in the present invention to use a surface-wave plasma generation apparatus capable of forming a large area film. Therefore, as shown in
In the present invention, an A4 width roll-shaped copper foil base material is disposed inside a reaction vessel, and a CVD treatment is performed while taking up a roll. While the A4 width roll-shaped copper foil base material passes through a sample stage of 48 cm in length, a film is formed. The treatment procedure is as follows.
The roll-shaped copper foil base material and a taking up mechanism were disposed so as to interpose a sample stage, provided inside a plasma generation chamber in a microwave surface-wave plasma CVD reaction vessel, therebetween. A copper foil base material was disposed on the sample stage. Next, the reaction chamber was evacuated to 1 Pa or less through an exhaust tube. A cooling water tube is wound around the reaction chamber, and the reaction chamber was cooled by supplying cooling water thereto. The sample stage is made of copper and a sample was cooled by supplying cooling water through a supply/drain tube of cooling water.
The height of the sample stage was adjusted such that a distance between a quartz window and a copper foil base material becomes 50 mm.
Next, a gas for CVD treatment was introduced into the reaction chamber through a gas introduction tube for CVD treatment. The gas for CVD treatment contained 50 SCCM of methane gas, 20 SCCM of argon gas and 30 SCCM of hydrogen gas and, therefore, the concentration of each raw gas was as follows: methane gas; 50 mol %, argon gas; 20 mol %, and hydrogen gas; 30 mol %. The pressure inside the reaction chamber was maintained at 3 Pa using a pressure control valve connected to the exhaust tube.
Plasma was generated at microwave power of 6.0 kW and plasma CVD treatment of the copper foil base material was performed The take-up rate of the copper foil was set to a given rate of 2 to 5 mm/sec. Taking the length (48 cm) of the sample stage exposed to plasma into consideration, the film formation times is from 96 to 240 seconds. The temperature of the substrate during the plasma treatment was measured by bringing the alumel-chromel thermocouple into contact with the substrate surface. The temperature of the copper foil base material throughout the plasma CVD treatment was about 400° C. Excess etching action may be sometimes exerted by exposing the copper foil base material to plasma, thus melting the copper foil, resulting in disappearance due to vaporization. Accordingly, it is essential to control the temperature of the base material sufficiently carefully. In order to prevent disappearance of the copper foil, it is preferable to maintain at 400° C. or lower. As a result of the above plasma CVD treatment, a transparent conductive carbon thin film, which is a crystalline graphene film, was laminated on the copper foil base material, thus forming a laminate of a copper foil and a transparent conductive carbon thin film.
Raman scattering spectrum of the transparent conductive carbon film obtained in the present Example was measured.
Samples were subjected to the measurement in a state where a transparent conductive carbon film formed on a copper foil base material by the technique of the present invention is in contact with the copper foil base material. In order to evaluate uniformity inside the transparent conductive carbon thin film, an A4 width sample was divided into seven equal parts and then Raman scattering spectra were measured. A measurement apparatus is Model XploRA, manufactured by HORIBA, Ltd. The wavelength of laser for excitation was 638 nm, the spot size of the laser beam was 1 μm in diameter, a spectrometer was configured with 600 gratings, output of a laser source was 9 mW, and a reducer was not used. An aperture size was 100 μm, a slit size was 100 μm, and an object lens with magnification of 100 times was used. The exposure time was 30 seconds, and the measured values (five times) were accumulated to obtain a spectrum.
An example of the measured Raman scattering spectrum of the transparent conductive carbon film is shown in
As shown in the drawing, peaks were observed at 2D band (2652.3 cm−1), G band (1592.6 cm−1), D band (1322.5 cm−1), and D′ band (1616.9 cm−1).
In
Furthermore, electric conductivity of a transparent conductive carbon film formed by the technique of the Present invention obtained in the present Example was measured and, as a result, it was found that the transparent conductive carbon film has sheet resistance of (1 to 8)×105 Ω/sq.
101: Plasma generation chamber
102: Rectangular microwave wave guide tube with slot
103: Quartz window for introducing microwave
104: Supporting member made of metal, which supports quartz window
105: Base material
106: Sample stage on which base material is disposed
107: Supply/drain tube of cooling water
108: Exhaust tube
109: Gas introduction tube for CVD treatment
110: Reaction vessel
111: Cooling water tube
200: Discharge vessel
201: Rectangular wave guide
202: Slot antenna
203: Quartz window
204: Base material
205: Sample stage
206: Reaction chamber
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-060055 | Mar 2010 | JP | national |
| 2010-200901 | Sep 2010 | JP | national |
| 2011-009616 | Jan 2011 | JP | national |
| 2011-041749 | Feb 2011 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2011/056352 | 3/17/2011 | WO | 00 | 11/7/2012 |
