The invention relates to a method for producing a bead single crystal.
Bead single crystals occur when a thin wire that comprises a noble metal is melted and recrystallized. The end of the wire is melted with a fine gas flame. A liquid metal bead forms when the gas flame is moved along the wire axis. A growth nucleus forms on the interface between the molten bead and the wire. A single crystal forms on this nucleus when the liquid ball of material hardens. In accordance with J. Clavilier et al. (J. Eletroanal. Chem. 107 (1980), 211) this method for producing bead single crystals is also known as the flame melting (FM) method.
Known from DE 103 04 533 is another method for producing a bead single crystal in which at least two wires are melted together using the flame melting method.
Another method for producing single-crystal Pt crystals is known from Furuya et al. (Furuya, N., Ichinose, M., Shibita, M. (2001), Production of high quality Pt single crystals using a new flame float-zone method. Phys. Chem. Chem. Phys. 3, 3255-3260). A Pt wire is melted in the center of the wire, also by means of an oxygen-rich hydrogen flame, and the molten zone is moved to the end of the wire. This method is also called the flame float zone (FFZ) method.
It is a disadvantage of these methods in the prior art that it is only possible to produce small bead single crystals from noble metals such as e.g. Pt and Au.
In particular for electrochemical or sensor applications a crystallographically precisely defined surface of the crystal is also desired that cannot be obtained with any of the aforesaid methods.
It is the object of the invention to provide a method for producing a bead single crystal with which a crystalographically precisely defined surface of the bead single crystal can be produced. It should also be possible to use wires made of non-noble metals.
The object is attained using a method in accordance with
The method for producing a bead single crystal provides, in accordance with the invention, that the bead single crystal is formed using electron beam heating of at least one wire.
After formation of the of the bead single crystal, the quality of the crystal is determined using the periodicity of the modules on the facets under the stereoscopic microscope.
The bead single crystals formed by electron beam heating regularly have a precisely defined surface and thus a particularly uniform, homogeneous crystal lattice. It is particularly advantageous that the single crystals formed in this manner also have a much smaller dislocation density than the single crystals known from the prior art.
In the framework of the invention it was found that the flame melting methods in accordance with the prior art exert a pressure on the bead single crystal that is forming. Dislocations in the crystal are produced by the vibrations that occur therein. In addition, there is even the risk that the bead single crystal will crack open.
A bead single crystal that has a much smaller dislocation density and thus particularly high quality in terms of orientation can thus be produced by means of electron beam heating in a particularly advantageous manner.
In the framework of the invention it was also found that it is not possible to prevent gas diffusion from the flame into the bead single crystal by means of the methods in accordance with the prior art. Particularly affected thereby are so-called getter materials such as e.g. Va, Ta, and Pd. However, for each wire made of a non-noble metal, such as e.g. a wire made of Cu or Ni, in fact it is oxidized by means of the flame melting method according to Clavilier or even Furuya et al. Therefore the quality of the bead single crystal using the flame melting method or even the so-called flame float zone (FFZ) method is, in general, limited. This is also true when additional measures are taken, such as working under a protective gas atmosphere.
It is particularly advantageous that, with electron beam heating, wires made of non-noble metals can also be used for producing bead single crystals.
Gas inclusions are fundamentally prevented in accordance with the invention. If it has any at all, the crystal has only minor dislocation densities, and in this manner an entirely new class of bead single crystals is provided. Thus, the selection of the wire material is advantageously no longer restricted to noble metals because oxidation of the metals is prevented in the vacuum.
In another embodiment of the invention, a high vacuum is applied during the method. It can be less than 5*10−4 mbar, in particular less than 10−6 mbar.
It is particularly advantageous that wires including Ag, Al, Cr, Cu, Ir, Mo, Nb, Ni, Pd, Pt, Re, Rh, Ru, Ta, Va, or W can be formed into bead single crystals. The wires can comprise these materials in a more or less pure form.
It is also possible to form bead single crystals from wires including metal alloys, in particular including Ag/Au, Pt/Rh, and Pt/Re alloys using electron beam heating in the vacuum.
In another particularly advantageous embodiment of the invention, electron beam heating is first applied for preventing gas inclusions and for forming a growth nucleus and then a flame melting method (FM or FFZ method) is applied. This is particularly advantageous when two or more wires made of two different materials are melted and recrystallized, e.g. for Pd/Va alloys or Cu/Ni alloys.
The invention will be explained in greater detail in the following using an exemplary embodiment and the enclosed drawing.
The entire structure is disposed in a vacuum chamber that is made of noble steel 1 and that is pumped to a vacuum of ˜1×10−6 mbar using a turbomolecular pump (not shown).
An electron beam is generated by electrically heating a metal filament 2 e.g. made of tungsten or tantalum and having a diameter of approximately 0.2 to 0.3 mm. A direct voltage source 7 supplies the filament 2 with about 50 Watts of power.
Except for an upper aperture (not shown), the filament 2 is enclosed by a metal housing 3. This ensures that the light produced by the filament 2 is captured. The electron beam exits from the housing 3 via the aperture.
Arranged a few millimeters above the aperture in the housing 3 is a metal wire 4. It has a diameter of for instance 0.1 to 2 mm. The metal wire 4 can be displaced vertically relative to the filament 2 using an alignment device (not shown), and thus can be positioned above the aperture of the housing 3.
The electrons exiting from the housing 3 are accelerated to the metal wire 4 by means of a high voltage source 8 and by applying a positive high voltage to the metal wire 4, typically ranging from 2 to 3 kV. While electrons heat the metal wire 4, an emission current that is typically a few mA runs off via the wire 4. Due to the electron beam heating, in the first step the wire 4 is melted and a liquid metal ball or bead forms that is held to the wire 4 by the surface tension of the liquid metal.
The wire 4 is then moved vertically downward relative to the filament 2 and the wire 4 is further melted until the bead single crystal 5 has the desired size. Now the heat output of the electron beam heating is reduced until the upper part of the bead single crystal 5 hardens. The phase boundary between the solid and liquid phase of the bead single crystal 5 can be observed through a viewing window 6.
Precisely observing the hardening is above all for verifying the formation of a single crystal bead crystal. Observation of regularly arranged facets of low surface energy indicates the presence of such a bead single crystal 5.
A particular advantage of the electron beam heating is the simple and precise control of the phase limit by varying the high voltage used or the current through the filament 2. The bead single crystal 5 is produced by slow hardening of the liquid metal ball. If the melting and hardening processes are repeated frequently, the single crystal finally forms; it can be recognized by the formation of facets on the bead surface. The bead single crystals produced in this manner can have a diameter of about 0.5 to 3 millimeters.
The high voltage and direct voltage values provided in the foregoing and the dimensions and distances (
The crystals are used for single crystal substrates in surface research, thin film technology, e.g. the structure of sensors, and in electrochemistry.
Number | Date | Country | Kind |
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10 2005 032 594.7 | Jul 2005 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/DE2006/001159 | 7/5/2006 | WO | 00 | 2/26/2008 |