Conventional perpendicular magnetic recording (PMR) heads can be fabricated in a number of ways.
The PMR pole layers and chemical mechanical planarization (CMP) stop layer are provided, via step 12. The PMR pole layers may include a seed layer and one or more layers forming the magnetic portion of the PMR pole. A hard mask is provided on the CMP stop layer, via step 14. The hard mask covers a portion of the PMR pole layers from which the conventional PMR pole is to be formed.
The conventional PMR pole is defined from the PMR pole layers 54, via step 16. Step 16 typically includes performing an ion mill and a pole trim using the hard mask 56 to expose the portion of the PMR pole layer(s) to be removed.
A conventional intermediate layer is provided, via step 18. The conventional intermediate layer is typically aluminum oxide that is blanket deposited on the conventional PMR transducer 50.
A CMP is performed to completely remove the hard mask 58, via step 20. Step 20 is configured to remove the hard mask 58 from substantially all of the structures on which the hard mask 58 resides. Thus, the hard mask 58 is substantially removed from the conventional PMR pole 54′ as well as other structures, such as the yoke (not shown) and anchor structures.
The CMP stop layer 56′ is removed, via step 22.
Although the conventional method 10 may provide the conventional PMR transducer 50, there may be drawbacks. In particular, as the critical dimensions of structures in the conventional PMR transducer 50 shrink to accommodate higher densities, tighter control may be desired for the structures in the conventional PMR transducer 50. Conventional methods, including the conventional method 10, may not provide the desired control over at least some portions of the conventional PMR transducer 50.
For example, some methods for forming the conventional PMR transducer 50 result in the top surface of the intermediate layer 60′ being at the same height as the top of the conventional PMR pole 54′. Such conventional methods may include those in which the conventional PMR pole 54′ is deposited into a trench rather than being defined by a milling process. In such a case, the notch 64 may be nonexistent. The method 10 may also be somewhat uncontrolled. For example, in some cases, removal of the hard mask 58 in step 20 removes a greater portion of the intermediate layer 60.
Accordingly, what is needed is an improved method for fabricating a PMR transducer.
A method and system for providing a perpendicular magnetic recording (PMR) transducer are disclosed. The PMR transducer includes a PMR pole and a yoke structure coupled with the PMR pole. The method and system include providing a hard mask and an intermediate layer. A first portion of the hard mask resides on the PMR pole. A second portion of the hard mask resides on another structure. The intermediate layer surrounds at least the PMR pole. The method and system also include performing a planarization on at least the intermediate layer to remove the first portion of the hard mask on the PMR pole without completely removing the second portion of the hard mask on the other structure. The method and system further include removing a remaining portion of the hard mask on the other structure, providing a write gap on the PMR pole, and providing a shield on the write gap.
The method 100 commences after formation of the PMR pole layers. In one embodiment, the method might commence after the PMR pole is formed. However, in another embodiment, the PMR pole is formed using the method 100.
A hard mask is provided, via step 102. One portion of the hard mask resides on the PMR pole, while a second portion of the hard mask resides on another structure. For example, in one embodiment, the second portion of the hard mask may be on the yoke, an anchor structure used during fabrication of the PMR head, another structure, or some combination thereof. In one embodiment, the hard mask is used to define the PMR pole. In addition, in one embodiment, a planarization stop layer, such as DLC, resides between the PMR pole and the hard mask. An intermediate layer is provided on the PMR pole and hard mask, via step 104. Thus, the intermediate layer surrounds at least the PMR pole. In one embodiment, the intermediate layer includes aluminum oxide.
A planarization is performed on the PMR transducer, via step 106. In one embodiment, the planarization includes a CMP process. The planarization thus removes at least a portion of the intermediate layer. The planarization is also performed such that the portion of the hard mask on the PMR pole is removed without completely removing the other portion of the hard mask on certain other structure(s). For example, the planarization may be performed such that at least some portion of the hard mask residing on an anchor structure and/or a yoke may remain.
In one embodiment, the planarization in step 106 is performed based on a thickness measurement. For example, the PMR pole has a top surface and the intermediate layer has an as-deposited top surface. When the planarization commences, the top surface of the PMR pole is lower than the as-deposited top surface of the intermediate layer. Thickness measurement(s) may be performed on the intermediate layer distal from the PMR pole during the planarization. In one embodiment, the thickness measurement may be performed using optical techniques. Thus, an intermediate layer thickness is determined during planarization. The planarization may be ended when the thickness of the intermediate layer indicates that an exposed surface of the intermediate layer is lower than the as-deposited top surface (before planarization) and higher than the PMR pole top surface. Thus, all of the hard mask on the PMR pole should have been removed. However, some portion of the hard mask on other structures may remain.
In addition, a notch in a shield may be present in the completed PMR transducer. The planarization performed in step 106 may be based on the desired height of the notch. In particular, if a thinner notch is desired, the planarization in step 106 is used to remove a greater portion of the intermediate layer. If a thicker notch is desired, less of the intermediate layer may be removed in step 106.
The remaining portion of the hard mask on the other structure(s) is removed, via step 108. In one embodiment, step 108 is performed using an ion mill. In addition to removing the hard mask, the ion mill performed in step 108 may also remove a portion of the intermediate layer. However, in one embodiment, the intermediate layer has a significantly lower selectivity for removal by the process used in step 108. In one embodiment, the ion mill performed in step 108 may also be used to tune the height of the notch. If a thinner notch is desired, the removal/ion mill in step 108 is used to remove a greater portion of the intermediate layer. If a thicker notch is desired, less of the intermediate layer may be removed in step 108. In addition, the any remaining planarization stop layer may be removed.
Step 108 may be performed in a variety of ways. In one embodiment, a mask is utilized. In such an embodiment, a mask may be formed on the PMR pole after the planarization has been performed in step 106. The mask thus protects the PMR pole region from which the hard mask was removed. Step 108 may then be performed while the mask is in place. Thus, the remaining part of the hard mask on the other structures may be removed without damage to the PMR pole region. The mask may then be removed before the write gap is provided. In another embodiment, the removal of the remaining portions of the hard mask in step 108 may be accomplished without the use of a mask. In such a case, the ion mill or other process used in step 108 may be controlled so that damage to the PMR pole region is reduced or avoided.
A write gap is provided on the PMR pole, via step 110. The shield is provided on the write gap, via step 112.
Using the method 100, a PMR transducer may be fabricated. Because removal of the hard mask is controlled in steps 106 and 108, the amount of the intermediate layer removed is better controlled. Thus, the size of the notch in the shield may also be better controlled. For example, in one embodiment, the notch height may be tuned from zero through one hundred nanometers with a sigma of not more than three nanometers. As a result, performance of the PMR transducer may be improved.
The material(s) for the PMR pole are provided, via step 152. Step 152 may include forming seed layer(s) as well as depositing layer(s) at least some of which contain magnetic materials. A planarization stop layer is provided, via step 154. The stop layer may be a CMP stop layer. In one embodiment, step 154 includes providing a DLC layer.
A hard mask is provided, via step 156. A portion of the hard mask covers the portion of the pole layers from which the PMR pole is formed. Thus, this portion of the hard mask may be considered to reside on the PMR pole. Although the region surrounding the PMR pole is exposed, other portions of the PMR head may be covered by the hard mask. For example, structures such as the yoke and anchor structure used during fabrication may be covered by the hard mask.
The PMR pole is defined, via step 158. In one embodiment, step 158 includes milling the exposed portion of the PMR pole materials. In addition, a pole trim may be performed.
An intermediate layer is provided, via step 160. In one embodiment, step 160 includes blanket depositing the intermediate layer. Thus, at least the PMR pole 204, as well as the planarization stop layer 206, are covered by the intermediate layer. In one embodiment, the intermediate layer includes aluminum oxide.
A planarization is performed to remove the hard mask 208 from the PMR pole 204, via step 162. However, in step 162, the hard mask 208 is not removed from at least some of the remaining structures of the PMR transducer 200. For example, in one embodiment, the hard mask 208 remains on the yoke 210 and/or and anchor structure 212.
In one embodiment, the planarization in step 162 is performed based on a thickness measurement. For example, the PMR pole 204 has a PMR pole top surface. When the planarization commences, the PMR pole top surface is lower than the as-deposited top surface. Thickness measurement(s) may be performed on the intermediate layer 214′ distal from the PMR pole during the planarization in step 162. In one embodiment, the thickness measurement may be performed using optical techniques. The planarization may be ended when the thickness of the intermediate layer 214′ indicates that an exposed surface of the intermediate layer is lower than the as-deposited top surface and higher than the PMR pole top surface. All of the hard mask on the PMR pole 204 should have been removed. However, some portion of the hard mask 208′ on other structures may remain. Thus, the CMP stop layer 206′ is exposed while other structures such as the yoke 210 and/or anchor 212 may still be covered by the hard mask 208′.
The remaining portion of the hard mask 208′ is removed, via step 164. In one embodiment, step 164 is performed using an ion mill. In another embodiment, another process may be used for removing the planarization stop layer 206′. Although the intermediate layer 214′ may have a significantly lower selectivity for removal by the process used in step 164, the removal in step 164 may also remove a portion of the intermediate layer 214′. In one embodiment, the ion mill performed in step 164 may also be used to tune the height of a notch in the shield by tuning the height of the intermediate layer 214′. If a thinner notch is desired, the removal/ion mill in step 164 is used to remove a greater portion of the intermediate layer 214′. If a thicker notch is desired, less of the intermediate layer 214′ may be removed in step 164.
Furthermore, step 164 may be performed in a variety of ways. In one embodiment, a mask is utilized. In such an embodiment, a mask may be formed on the PMR pole after the planarization has been performed in step 162. The mask thus protects the PMR pole 204, from which the hard mask was removed. Step 164 may then be performed while the mask is in place. Thus, the remaining part of the hard mask 208′ on the other structures may be removed without damage to the PMR pole 204. The mask may then be removed before the write gap is provided. In another embodiment, the removal of the remaining portions of the hard mask 208 in step 164 may be accomplished without the use of a mask. In such a case, the ion mill or other process used in step 164 may be controlled so that damage to the PMR pole region is reduced or avoided.
Any remaining portion of the planarization stop layer may also be removed, via step 166.
A write gap is provided on the PMR pole, via step 168. The shield is provided on the write gap, via step 170.
The notch 222 may be configured using the planarization in step 162 as well as the removal of the hard mask in step 164. Thus, the planarization performed in step 162 may also be based on the desired height of the notch. In particular, if a thinner notch is desired, the planarization in step 162 is used to remove a greater portion of the intermediate layer 214. If a thicker notch is desired, less of the intermediate layer 214 may be removed in step 162. Similarly, if a thinner notch is desired, the hard mask 208′ removal in step 164 is used to remove a greater portion of the intermediate layer 214. If a thicker notch is desired, less of the intermediate layer 214 may be removed in step 164. Thus, using steps 162 and 164, the notch 222 may be controlled.
Using the methods 100 and/or 150, a PMR transducer 200 may be fabricated. Because removal of the hard mask is controlled in the planarization step 106/162 and hard mask removal step 108/164, the amount of the intermediate layer 214 removed is better controlled. Thus, the size of the notch 22 in the shield 220 may also be better controlled. For example, in one embodiment, the notch height may be tuned from zero through one hundred nanometers with a sigma of not more than three nanometers. As a result, performance of the PMR transducer may be improved.
Number | Name | Date | Kind |
---|---|---|---|
6195229 | Shen et al. | Feb 2001 | B1 |
6306311 | Han et al. | Oct 2001 | B1 |
6329211 | Terunuma et al. | Dec 2001 | B1 |
6583966 | Han et al. | Jun 2003 | B2 |
6722018 | Santini | Apr 2004 | B2 |
6870712 | Chen et al. | Mar 2005 | B2 |
6949833 | O'Kane et al. | Sep 2005 | B2 |
6975486 | Chen et al. | Dec 2005 | B2 |
7002778 | Yazawa | Feb 2006 | B2 |
7024756 | Le et al. | Apr 2006 | B2 |
7070698 | Le | Jul 2006 | B2 |
7139153 | Hsiao et al. | Nov 2006 | B2 |
20040070876 | Yazawa | Apr 2004 | A1 |
20050024779 | Le et al. | Feb 2005 | A1 |
20050225898 | Huang et al. | Oct 2005 | A1 |
20050264931 | McFadyen | Dec 2005 | A1 |
20060000795 | Chen et al. | Jan 2006 | A1 |
20060044681 | Le et al. | Mar 2006 | A1 |
20060044682 | Le et al. | Mar 2006 | A1 |
20060102956 | Kamarajugadda et al. | May 2006 | A1 |
20060198049 | Sasaki et al. | Sep 2006 | A1 |
20060231523 | Baer et al. | Oct 2006 | A1 |
20060245109 | Hsu et al. | Nov 2006 | A1 |
20060288565 | Le et al. | Dec 2006 | A1 |
20070035878 | Guthrie et al. | Feb 2007 | A1 |
20070115584 | Balamane et al. | May 2007 | A1 |
20070139816 | Chen et al. | Jun 2007 | A1 |
20070211384 | Hsiao et al. | Sep 2007 | A1 |
20070217069 | Okada et al. | Sep 2007 | A1 |
20070230046 | Le et al. | Oct 2007 | A1 |
20070245545 | Pentek et al. | Oct 2007 | A1 |
20070258167 | Allen et al. | Nov 2007 | A1 |
20070268625 | Jiang et al. | Nov 2007 | A1 |
20080037168 | Freitag et al. | Feb 2008 | A1 |