Claims
- 1. A method of removing residual fluorine in a high density plasma chemical vapor deposition (HDP-CVD) chamber comprising the steps of:
forming a high density plasma in the presence of at leastA microwave power, a silicon source, and an oxygen source whereby a silicon-rich oxide film is deposited over at least part of the inner surface of the HDP-CVD chamber; supplying a process gas comprising NF3 in the presence of microwave power to form a plasma thereby removing fluorine from the silicon-rich oxide film into the gas phase; and removing fluorine-containing gas from the HDP-CVD chamber.
- 2. The method of claim 1, where the silicon-rich oxide film comprises pores ranging from about 30 per cent by volume to about 90 percent by volume.
- 3. The method of claim 1, wherein the silicon-rich oxide film is deposited at a pressure such that the silicon-rich oxide film is deposited substantially over an upper portion of the HDP-CVD chamber.
- 4. The method of claim 1, wherein the silicon source comprises silane and the oxygen source comprises oxygen.
- 5. The method of claim 1, further comprising the steps of:
supplying a control wafer to the HDP-CVD chamber; and depositing a silicon-rich oxide film over the control wafer.
- 6. The method of claim 5, wherein the step of depositing a silicon-rich oxide film further comprises:
depositing the silicon-rich oxide film over the control wafer for a period of time such that fluorine present in said silicon-rich oxide film reaches a pre-determined level.
- 7. The method of claim 5, wherein the step of depositing a silicon-rich oxide film further comprises:
depositing the silicon-rich oxide film over the control wafer under pressures such that the silicon-rich oxide film is formed substantially over the control wafer to include a lower portion of the HDP-CVD chamber.
- 8. The method of claim 5, further comprising repeating at least one of the steps until fluorine present in the silicon-rich oxide film deposited over the control wafer reaches a pre-determined level.
- 9. The method of claim 1 wherein the step of depositing a silicon-rich oxide film further comprises:
depositing the silicon-rich oxide film at pressures from about 3 mTorr to about 6 mTorr.
- 10. The method of claim 5 wherein the step of depositing a silicon-rich oxide film further comprises:
depositing the silicon-rich oxide film over the control wafer at pressures from about 3 mTorr to about 6 mTorr.
- 11. A method of removing residual fluorine in a HDP-CVD chamber comprising the steps of:
forming a high density plasma in the presence of at least a microwave power, a silicon source, and an oxygen source whereby a first silicon-rich oxide film is deposited over at least part of the inner surface of the HDP-CVD chamber; supplying a process gas comprising NF3 in the presence of microwave power to form a plasma thereby removing fluorine from the first silicon-rich oxide film into the gas phase; removing fluorine-containing gas from the HDP-CVD chamber; positioning a control wafer in the HDP-CVD chamber; and depositing a second silicon-rich oxide film over the control wafer.
- 12. The method of claim 11, wherein the first silicon-rich oxide film comprises pores ranging from about 30 percent by volume to about 90 percent by volume.
- 13. The method of claim 11, where the second silicon-rich oxide film comprises pores ranging from about 30 percent by volume to about 90 percent by volume.
- 14. The method of claim 11, wherein the first silicon-rich oxide film is deposited at a pressure such that the first silicon-rich oxide film is deposited substantially over an upper portion of the HDP-CVD chamber.
- 15. The method of claim 11, wherein the first silicon-rich oxide film is deposited at ambient pressures ranging from about 2.5 mTorr to about 100 mTorr.
- 16. The method of claim 11, wherein the second silicon-rich oxide film is deposited at a pressure such that the second silicon-rich oxide film is deposited substantially over a lower portion of the HDP-CVD chamber to include the control wafer.
- 17. The method of claim 11, wherein the second silicon-rich oxide film is deposited at ambient pressures ranging from about 2.5 mTorr to about 100 mTorr.
- 18. The method of claim 11, wherein the silicon source comprises silane and the oxygen source comprises oxygen.
- 19. The method of claim 11, wherein the step of depositing a second silicon-rich oxide film further comprises:
depositing the second silicon-rich oxide film over the control wafer for a period of time such that fluorine present in said second silicon-rich oxide film reaches a pre-determined level.
- 20. The method of claim 11, further comprising repeating at least one of the steps until fluorine present in the second silicon-rich oxide film deposited over the control wafer reaches a pre-determined level.
RELATED APPLICATIONS
[0001] This is a continuation-in-part (CIP) application of U.S. patent application Ser. No. 09/975,391, filed Oct. 9, 2001.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09975391 |
Oct 2001 |
US |
Child |
10196850 |
Jul 2002 |
US |