Claims
- 1. A gate oxide assembly for a semiconductor device prepared by a method of reducing charge damage to an oxide gate assembly during wafer production comprising the steps of:forming an oxide layer over a semiconductor body; depositing a further layer over said oxide layer and said semiconductor body in a chamber using plasma enhanced deposition with an RF power level supplied sufficient to generate a plasma and at a pressure of at least 1.2 Torr; after said depositing step, maintaining said pressure in said chamber of at least 1.2 Torr; then powering down said RF power level while maintaining said pressure at at least 1.2 Torr; and then lowering said pressure.
- 2. The gate oxide assembly of claim wherein said pressure is maintained until said power level is reduced to at least 50 watts.
- 3. The gate oxide assembly of claim 1 wherein said assembly is processed in said chamber with a pressure of between about 1.2 and 7.0 Torr.
- 4. The assembly of claim 1 wherein a power lift step to release said semiconductor body from any electrostatic bonding is performed during said maintaining step.
- 5. A gate oxide assembly for a semiconductor deviceducing charge damage to an oxide gate assembly during wafer production prepared by a method of:forming a gate oxide over a semiconductor body; forming a gate electrode over said gate oxide by depositing a layer over said gate oxide and said semiconductor body in a chamber using a RF power supplied to the chamber sufficient to generate a plasma and at a pressure of at least 1.2 Torr; powering down said RF power while maintaining pressure in said chamber at at least 1.2 Torr until after said RF power is powered down; and then reducing said pressure in said chamber.
- 6. The assembly of claim 5 wherein a power lift step to release said semiconductor body from any electrostatic bonding is performed during said maintaining step using a duration on the order of 20 seconds, an RF power on the order of 50 watts and a temperature on the order of 390° C.
Parent Case Info
This is a divisional application of Ser. No. 08/878,479 filed Jun. 19, 1997.
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Roche et al. |
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