characterised by the conducting layer

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H01L29/42372

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42372characterised by the conducting layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,981
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dishing prevention structure embedded in a gate electrode
- Patent number 12,142,488
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including separation pattern penetrating gate...
- Patent number 12,132,046
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Ho-Jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function layers for transistor gate electrodes
- Patent number 12,132,091
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of barrier metal layer for electrode of gal...
- Patent number 12,112,983
- Issue date Oct 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming thereof
- Patent number 12,100,706
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhu-Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistor devices with replacement gate
- Patent number 12,094,937
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and configurations to reduce transistor gate short defects
- Patent number 12,094,780
- Issue date Sep 17, 2024
- Intel Corporation
- Sridhar Govindaraju
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of tuning threshold voltages of transistors
- Patent number 12,087,767
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuan-Chang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor circuit
- Patent number 12,087,850
- Issue date Sep 10, 2024
- Kabushiki Kaisha Toshiba
- Norio Yasuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,087,637
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,667
- Issue date Sep 10, 2024
- Innolux Corporation
- Jui-Jen Yueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,080,720
- Issue date Sep 3, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Three dimensional semiconductor devices
- Patent number RE50089
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Sung-Il Chang
Information Patent Grant
Semiconductor dies including low and high workfunction semiconducto...
- Patent number 12,069,862
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 12,046,669
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and preparation method thereof
- Patent number 12,040,376
- Issue date Jul 16, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,040,370
- Issue date Jul 16, 2024
- United Microelectronics Corp.
- Wei-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including a MOS trans...
- Patent number 12,033,858
- Issue date Jul 9, 2024
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,027,521
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded non-overlapping source field design for improved GaN HEMT...
- Patent number 12,027,616
- Issue date Jul 2, 2024
- GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
- Dheeraj Mohata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor and electronic system including the same
- Patent number 12,021,095
- Issue date Jun 25, 2024
- Samsung Electronics Co., Ltd.
- Jeongsoon Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage devices and associated techniques and confi...
- Patent number 12,021,141
- Issue date Jun 25, 2024
- Sony Group Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted contacts and methods of fabricating the same in semiconducto...
- Patent number 12,002,756
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,978,779
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,961,891
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Source/Drain Contacts and Methods for Forming the Same
- Publication number 20240421200
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421161
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GAL...
- Publication number 20240420995
- Publication date Dec 19, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240404919
- Publication date Dec 5, 2024
- InnoLux Corporation
- Jui-Jen YUEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240405128
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Aravindh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387527
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Ho-Jun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISHING PREVENTION STRUCTURE EMBEDDED IN A GATE ELECTRODE
- Publication number 20240387191
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240371865
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHU-MIN SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Layers For Transistor Gate Electrodes
- Publication number 20240363711
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TUNING THRESHOLD VOLTAGES OF TRANSISTORS
- Publication number 20240363627
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Chang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20240355933
- Publication date Oct 24, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Gang WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240321880
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...
- Publication number 20240321746
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...
- Publication number 20240322037
- Publication date Sep 26, 2024
- SONY GROUP CORPORATION
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...
- Publication number 20240312784
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTO...
- Publication number 20240315042
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240282835
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- JUYOUN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240282834
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- JUYOUN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240258312
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
- Publication number 20240258393
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Hyojung NOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING METAL CONTACTS ON METAL GATES
- Publication number 20240250139
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND PATTERNING METHOD
- Publication number 20240234214
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
- Publication number 20240234529
- Publication date Jul 11, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure
- Publication number 20240222457
- Publication date Jul 4, 2024
- UNITED MICROELECTRONICS CORP.
- Wei-Cheng Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240204054
- Publication date Jun 20, 2024
- Samsung Electronics Co., Ltd.
- Noh Yeong PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION
- Publication number 20240203988
- Publication date Jun 20, 2024
- Samsung Electronics Co., Ltd.
- Sun Ki MIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER
- Publication number 20240162349
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE
- Publication number 20240153940
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SHUN-LI CHEN
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the conducting layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing gate structure and method of manufacturing...

Semiconductor device

Dishing prevention structure embedded in a gate electrode

Semiconductor device including separation pattern penetrating gate...

Work function layers for transistor gate electrodes

MOS transistor having substantially parallelepiped-shaped insulatin...

Atomic layer deposition of barrier metal layer for electrode of gal...

Low leakage FET

Semiconductor structure and method of forming thereof

Stacked field effect transistor devices with replacement gate

Techniques and configurations to reduce transistor gate short defects

Method of tuning threshold voltages of transistors

Semiconductor device and semiconductor circuit

Semiconductor device and method of manufacture

Semiconductor device

Semiconductor device and manufacturing method thereof

Three dimensional semiconductor devices

Semiconductor dies including low and high workfunction semiconducto...

HEMT and method of fabricating the same

Semiconductor device and preparation method thereof

Semiconductor structure and forming method thereof

Method for fabricating a semiconductor device including a MOS trans...

Semiconductor devices and methods of manufacturing thereof

Embedded non-overlapping source field design for improved GaN HEMT...

Image sensor and electronic system including the same

Multi-threshold voltage devices and associated techniques and confi...

Butted contacts and methods of fabricating the same in semiconducto...

Semiconductor device and method of fabricating the same

Wide band gap semiconductor device with surface insulating film

Structure for metal gate electrode and method of fabrication

Patents Applicationslast 30 patents

Source/Drain Contacts and Methods for Forming the Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GAL...

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS

ELECTRONIC DEVICE

FIELD EFFECT TRANSISTOR (FET) AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

DISHING PREVENTION STRUCTURE EMBEDDED IN A GATE ELECTRODE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Work Function Layers For Transistor Gate Electrodes

METHOD OF TUNING THRESHOLD VOLTAGES OF TRANSISTORS

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A MOS TRANS...

SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTO...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

FORMING METAL CONTACTS ON METAL GATES

GATE STRUCTURE AND PATTERNING METHOD

WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM

Semiconductor structure

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION

GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER

SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE