Claims
- 1. A method for the evaporation of monomers which are liquid at room temperature and have a low vapor pressure in the production of thin coatings containing silicon and oxygen on substrates by chemical vapor deposition in a vacuum chamber, said method comprising the steps of:
- selecting a monomer from the group consisting of TEOS (tetraethylorthosilicate), TMS (tetramethyisilane) and HMDS (hexamethyldisiloxane),
- feeding the monomer in a liquid state to an evaporator,
- providing a body having a capillary action in said evaporator,
- controlling the feeding of the monomer to said body using a mass flow regulator, and
- heating said body so that complete evaporation of the monomer from said body occurs at the pressure of said vacuum chamber.
- 2. Method in accordance with claim 1, characterized in that the body having the capillary action is heated by radiant heating.
- 3. Method in accordance with claim 1, characterized in that the body having capillary action is of elongated configuration having opposed ends and a free surface therebetween, said body being suspended freely by its ends, and in that the liquid monomer is fed to one of said ends of the body and the evaporated monomer is withdrawn from the free surface of the body and fed to said vacuum chamber.
- 4. Method in accordance with claim 2 wherein said body having capillary action is heated solely by radiant heating.
- 5. Method in accordance with claim 1 wherein said mass flow regulator feeds the liquid monomer to said body at a constant rate.
- 6. Method in accordance with claim 1 wherein said evaporator is evacuated but for said monomer evaporated therein.
Priority Claims (1)
Number |
Date |
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3833232 |
Sep 1988 |
DEX |
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Parent Case Info
This is a division application of application Ser. No. 267,077, filed Nov. 4, 1988, now U.S. Pat. No. 4,947,789, issued Aug. 14, 1990.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4892753 |
Wang et al. |
Jan 1990 |
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4959524 |
Rudnay |
Sep 1990 |
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Foreign Referenced Citations (1)
Number |
Date |
Country |
63-199423 |
Aug 1988 |
JPX |
Non-Patent Literature Citations (4)
Entry |
Chin and Van de Ven, "Plasma TEOS process for interlayer dielectric applications", Solid State Technology, Apr. 1988, pp. 119-122. |
Mukherjee and Evans, "The Deposition of Thin Films by Decompositions of TEOS in a Radio Frequency Glow Discharge", Thin Solid Films, 14 (1972), pp. 105-118. |
Mackens and Merkt, "Plasma Enhanced Vapor Deposited SiO.sub.2 for Metal/Oxide/Semiconductor Structures on InSb", Thin Solid Films, 97 (1982), pp. 53-61. |
Howard, "Selecting Semiconductor Dopants for Precise Process Control", Microelectronic Manufacturing and Testing, Dec. 1985, pp. 20-24. |
Divisions (1)
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Number |
Date |
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Parent |
267077 |
Nov 1988 |
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