Graphene represents a form of carbon in which the carbon atoms reside within a single atomically thin sheet or a few layered sheets (e.g., about 20 or less) of six-membered lattice rings. One known method of producing high quality, large-scale graphene sheets (i.e., 1 cm2 or larger) is through chemical vapor deposition (CVD). During CVD, a growth substrate is exposed to one or more gaseous reactants, which react to deposit a carbon film on the surface of the growth substrate, resulting in the production of a graphene sheet. After growth, the graphene sheet must then be transferred to a functional substrate suitable for the intended application of the graphene sheet. To transfer the graphene sheet to the desired substrate requires separation of the graphene sheet from the growth substrate, which may result in tearing, cracking, or other substantial defects in the graphene sheet, especially in large-scale transfers in which the risk of damage is higher. In general, two methods may be used to facilitate the transfer of the graphene sheet from the growth substrate: the supported transfer method and the free-float transfer method.
The supported transfer method typically involves the use of a support polymer, such as poly(methyl methacrylate) (PMMA) or other similar polymers. In this method, the graphene is coated with PMMA and then the underlying growth substrate is etched away. The PMMA-graphene composite is then transferred to the functional substrate and mounted. Once mounted, the composite is washed with a solvent to remove the PMMA. Because this method provides a physical support to the graphene during transfer, large-scale transfer of graphene sheets is made possible. However, the use of the polymer leaves contaminants or residues on the surface of the graphene sheet. While it is possible to remove the PMMA such that the contaminants or residues are present in small amounts, even small amounts may nevertheless impact the quality of the sheet. This impact in quality, however small, may be significant in certain applications. For example, the contaminants or residues may impact the ability to reliably perforate the graphene sheet. In addition, the solvent required to remove the polymer may limit the type of functional substrate that may be used. For example, in removing PMMA, acetone is typically used. The use of this solvent, however, may prevent the use of track-etched polycarbonate as a functional substrate.
The free-float transfer method typically requires floating the graphene in a solution. During this method, the graphene-growth substrate composite is first floated in an etching solution containing an agent that etches away the growth substrate, producing a free-floating graphene sheet. The etching solution is then washed out and changed to a water-based solution to allow the graphene to be floated onto the desired substrate. As the free-float transfer method does not involve the use of secondary polymer materials to coat the graphene sheet, the free-float transfer method is desirable over the supported transfer method due to the decreased risk of introducing contaminants or leaving residue on the graphene sheet. However, large-scale transfer of the graphene sheet is difficult using this method as the risk of tearing or otherwise damaging the sheet is higher due to the unsupported nature of the transfer method.
According to some embodiments, a method for transferring a graphene sheet from a copper substrate to a functional substrate may include forming the graphene sheet on the copper substrate using chemical vapor deposition, and irradiating the graphene sheet formed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene sheet. The prepared graphene sheet may be resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate. The method may further include removing the copper substrate from the prepared graphene sheet using an etchant bath, floating the prepared graphene sheet in a floating bath, submerging the functional substrate in the floating bath, and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
According to some embodiments, the graphene sheet may comprise an area of 1 cm2 or larger.
According to some embodiments, the broad beam irradiation may be collimated.
According to some embodiments, the plurality of xenon ions may be applied at a voltage in a range of about 100 V to about 1500 V.
According to some embodiments, the plurality of xenon ions may be applied at a voltage in a range of about 250 V to about 750 V.
According to some embodiments, the plurality of xenon ions may be applied at a voltage of about 500 V.
According to some embodiments, the method may further include the graphene sheet formed on the copper substrate to a temperature ranging from about 50° C. to about 100° C.
According to some embodiments, the method may further include heating the graphene sheet disposed on the copper substrate to a temperature of about 80° C.
According to some embodiments, the plurality of xenon ions may be provided at a flux of about 6.24×1011 Xe+/cm2/s to about 6.24×1014 Xe+/cm2/s.
According to some embodiments, the plurality of xenon ions may be provided at a flux of about 6.24×1012 Xe+/cm2/s to about 6.24×1013 Xe+/cm2/s.
According to some embodiments, the plurality of xenon ions may be provided at a flux of about 3.75×1013 Xe+/cm2/s.
According to some embodiments, the graphene sheet formed on the copper substrate may be irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 6.24×1012 Xe+/cm2 to about 2.5×1013 Xe+/cm2.
According to some embodiments, the graphene sheet formed on the copper substrate may be irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 1.25×1013 Xe+/cm2.
According to some embodiments, a method for transferring a graphene sheet from a copper substrate to a functional substrate may include forming the graphene sheet on the copper substrate using chemical vapor deposition and irradiating the graphene sheet formed on the copper substrate with a plurality of neon ions using broad beam irradiation to form a prepared graphene sheet. The prepared graphene sheet may be resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate. The method may further include removing the copper substrate from the prepared graphene sheet using an etchant bath, floating the prepared graphene sheet in a floating bath, submerging the functional substrate in the floating bath, and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
According to some embodiments, the method may further include heating the graphene sheet formed on the copper substrate to a temperature of about 50° C. to about 100° C.
According to some embodiments, the graphene sheet formed on the copper substrate may be irradiated with the plurality of neon ions for a contact time resulting in a total fluence of about 6.24×1012 ions/cm2 to about 7.5×1013 ions/cm2.
According to some embodiments, the graphene sheet formed on the copper substrate may be irradiated with the plurality of neon ions for a contact time resulting in a total fluence of up to 2×1014 ions/cm2.
According to some embodiments, a method for transferring a graphene sheet from a growth substrate to a functional substrate may include forming the graphene sheet on the growth substrate and irradiating the graphene sheet formed on the growth substrate with a plurality of ions to form a prepared graphene sheet. The prepared graphene sheet may be resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate. The method may further include removing the growth substrate from the prepared graphene sheet using an etchant bath, floating the prepared graphene sheet in a floating bath, submerging the functional substrate in the floating bath, and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
According to some embodiments, the graphene sheet may comprise an area of 1 cm2 or larger.
According to some embodiments, the growth substrate may be a copper substrate.
According to some embodiments, the growth substrate may be a nickel substrate.
According to some embodiments, the graphene sheet may be formed on the copper substrate using chemical vapor deposition.
According to some embodiments, the graphene sheet may be formed on the nickel substrate using chemical vapor deposition.
According to some embodiments, the plurality of ions may comprise noble gas ions.
According to some embodiments, the noble gas ions may comprise xenon ions.
According to some embodiments, the noble gas ions may comprise neon ions.
According to some embodiments, the noble gas ions may comprise argon ions.
According to some embodiments, the plurality of ions may be applied to the graphene sheet formed on the growth substrate using broad beam irradiation.
According to some embodiments, the broad beam irradiation may be collimated.
According to some embodiments, the plurality of ions may be applied to the graphene sheet formed on the growth substrate at a voltage of about 100 V to about 1500 V.
According to some embodiments, the plurality of ions may be applied at a flux of about 1 nA/mm2 to about 1000 nA/mm2.
According to some embodiments, the plurality of ions may be applied at a flux of about 10 nA/mm2 to about 100 nA/mm2.
According to some embodiments, the plurality of ions may be applied at a flux of about 40 nA/mm2 to about 80 nA/mm2.
According to some embodiments, the plurality of ions may be applied at a flux of about 60 nA/mm2.
According to some embodiments, the graphene sheet formed on the growth substrate may be irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/mm2 to about 120 nAs/mm2.
According to some embodiments, the graphene sheet formed on the growth substrate may be irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/mm2 to about 40 nAs/mm2.
According to some embodiments, the graphene sheet formed on the growth substrate may be irradiated with the plurality of ions for a contact time resulting in a total fluence of about 20 nAs/mm2.
Some embodiments provide a system and method for treating graphene sheet that has been grown on a growth substrate before the growth substrate is removed and the graphene sheet transferred to a functional substrate using the free-float transfer method. The treatment provides a pristine (e.g., substantially residual/contaminant-free) graphene sheet having little to no unintended defects, which is capable of being transferred from the growth substrate with reduced risk of failure (e.g., little risk of tearing, cracking, or forming other undesirable defects) in transferring the sheet to a functional substrate during the free-float transfer method. In some embodiments, the graphene sheet is modified, and thus prepared for transfer, through an application of energy to the graphene sheet while it is disposed on the growth substrate. The energetic application may be in the form of a broad beam ion source configured to irradiate the graphene sheet with ions (e.g., group 18 element ions) such that the graphene sheet is prepared for reliable, large-scale transfer while disposed on the growth substrate. Thus, some of the systems and methods described herein eliminate the need of secondary coating materials (e.g., polymers) to aid in the transfer of the graphene sheet to the functional substrate, thus eliminating the risk of lowering the quality of the graphene sheet through contaminants introduced by the use of secondary coating materials. Accordingly, the transfer preparation method of some of the embodiments allows for the reliable transfer of high quality graphene sheets on a large-scale (i.e., 1 cm2 or larger) using the free-float transfer method.
After preparation of the growth substrate 10, graphene is grown on both the upper and bottom surface of the growth substrate 10, which may be accomplished through chemical vapor deposition (CVD) by exposing the growth substrate 10 to gaseous reactants until graphene is formed. The CVD process results in graphene sheets being synthesized on both a bottom surface of the growth substrate 10 and an upper surface of the growth substrate 10. As shown in
Once the graphene sheet 20 has been deposited onto the upper surface of the growth substrate 10, the graphene sheet 20 may then be transferred to a substrate for a desired application. As shown in
In certain embodiments, the transfer preparation apparatus 100 may be configured to provide broad beam ion irradiation to the graphene sheet 20 and the growth substrate 10. The broad beam ion source may be collimated or substantially collimated (e.g., five degrees from normal). The plurality of ions 50 may comprise of ions that are singly charged or multiply charged. In some embodiments, the plurality of ions 50 may be noble gas ions, such as ions of an element from Group 18 of the periodic table. In some embodiments, the plurality of ions 50 may be organic ions or organometallic ions. The organic or organometallic ions may have an aromatic component. In addition, the molecular mass of the organic or organometallic ions may range from 75 to 200 or 90 to 200. In some embodiments, the plurality of ions 50 may comprise Ne+ ions, Ar+ ions, tropylium ions, and/or ferrocenium ions. In certain embodiments, the plurality of ions 50 comprises Xe+ ions.
The ion source may be configured to supply the plurality of ions 50 at a voltage in a range of about 100 V to about 1500 V. In some embodiments, the plurality of ions 50 may be applied at a voltage in a range of about 250 V to about 750 V. In certain embodiments, the plurality of ions 50 (e.g., Xe+ ions) may be applied at a voltage of about 500 V.
During the transfer preparation process, the graphene sheet 20 and the growth substrate 10 may be heated to a temperature ranging from about 50° C. to about 100° C. In some embodiments, the graphene sheet 20 and the growth substrate 10 may be heated to a temperature of about 80° C. In other embodiments, the graphene sheet 20 and the growth substrate 10 may be kept at room temperature. In addition, the graphene sheet 20 and the growth substrate 10 may be exposed to a pressure of less than 5×10−7 Torr. In some embodiments, the graphene sheet 20 and the growth substrate 10 may be exposed to a pressure ranging from 1×10−7 Torr to 5×10−6 Torr. In some embodiments, this process may be set to occur over several hours or overnight.
The ion source may be configured to provide the plurality of ions 50 at a flux of about 1 nA/mm2 (6.24×1011 ions/cm2/s) to about 1000 nA/mm2 (6.24×1014 ions/cm2/s). In some embodiments, the plurality of ions 50 is provided at a flux of about 10 nA/mm2 (6.24×1012 ions/cm2/s) to about 100 nA/mm2 (6.24×1013 ions/cm2/s) In certain embodiments, the plurality of ions 50 is provided at a flux of about 40 nA/mm2 (2.5×1013 ions/cm2/s) to about 80 nA/mm2 (5.0×1013 ions/cm2/s). In certain embodiments, the plurality of ions 50 is provided at a flux of about 60 nA/mm2 (3.75×1013 ions/cm2/s). In embodiments where the plurality of ions 50 comprises Xe+ ions, the plurality of ions 50 may be provided at a flux of about 6.24×1011 Xe+/cm2/s to about 6.24×1014 Xe+/cm2/s. In other embodiments, the plurality of ions 50 comprises Xe+ ions provided at a flux of about 6.24×1012 Xe+/cm2/s to about 6.24×1013 Xe+/cm2/s. In other embodiments, the plurality of ions 50 comprises Xe+ ions provided at a flux of about 3.75×1013 Xe+/cm2/s.
The graphene sheet 20 and the growth substrate 10 may be exposed to the ion source for a contact time resulting in a total fluence of about 10 nAs/mm2 (6.24×1012 ions/cm2) to about 40 nAs/mm2 (2.5×1013 ions/cm2). In certain embodiments, the graphene sheet 20 and the growth substrate 10 are exposed for under a second such that the total fluence is 20 nAs/mm2 (1.25×1013 ions/cm2). In embodiments where the plurality of ions comprises Xe+ ions, the graphene sheet 20 and the growth substrate 10 may be exposed for a contact time that results in a total fluence of about 10 nAs/mm2 to about 40 nAs/mm− (or about 6.24×1012 Xe+/cm2 to about 2.5×1013 Xe+/cm2). In certain embodiments where the plurality of ions 50 comprises Xe+ ions, the total exposure time results in a total fluence of about 1.25×1013 Xe+/cm2. The upper limit of total fluence for the transfer preparation process may increase as the atomic number of the plurality of ions 50 decreases. In some embodiments, the upper limit of the total fluence may be about 120 nAs/mm2. In other embodiments, the upper limit of the total fluence may be about 500 nAs/mm2. In some embodiments, the upper limit of the total fluence may be about 1000 nAs/mm2. For example, in embodiments where the plurality of ions comprises Ne+ ions, the graphene sheet 20 and the growth substrate 10 may be exposed for a contact time that results in a total fluence of about 10 nAs/mm2 (6.24×1012 ions/cm2) to about 120 nAs/mm2 (7.5×1013 ions/cm2/s). In some embodiments, the graphene sheet 20 and the growth substrate 10 may be exposed to a plurality of neon ions for a contact time that results in a total fluence of about about 10 nAs/mm2 to about 500 nAs/mm2 In other embodiments, the graphene sheet 20 and the growth substrate 10 may be exposed to a plurality of neon ions for a contact time that results in a total fluence of about about 10 nAs/mm2 to about 1000 nAs/mm2. In yet other embodiments, the graphene sheet 20 and the growth substrate 30 may be exposed to a plurality of neon ions for a contact time that results in a total fluence of up to 2×1014 ions/cm2.
After the above treatment, the graphene sheet 20 and the growth substrate 10 may be exposed to about 1 atm of N2 as a final step in the process before transferring of the graphene sheet 20 to the functional substrate. The result of the preparation process is, in effect, a “toughened” graphene sheet 20 that may be reliably transferred to a functional substrate using the unsupported free-float transfer method while being resistant to forming or inducing unintentional defects (tears, cracks, wrinkles, unintentionally-created pores) in the graphene sheet 20 during the free-float transfer process. The treatment thus provides a toughened graphene sheet 20 that is capable of providing a high coverage area (e.g., 99% or more of the functional substrate is covered by the graphene sheet) over the functional substrate and a clean surface for effective use of other treatment processes (e.g., perforating processes). While not being restricted to any particular theory for the mechanism that prepares or toughens the graphene sheet 20 for transfer, the toughening may be facilitated by the presence of the carbonaceous material and the interaction between the graphene sheet 20 and the copper growth substrate 10 interface. The ion beam irradiation may provide sufficient energy to the carbonaceous material to reform the graphene sheet 20 while on the copper substrate 10 to a pristine layer due to the sputtering of the carbon atoms present in and/or on the surface of the graphene sheet 20.
Once the graphene sheet 20 has been prepared using the transfer preparation apparatus 100, the graphene sheet 20 and the growth substrate 10 composite is placed in an etchant bath 30, as shown in
As shown in
The pores present in the polymer substrate that are covered by the prepared graphene sheet are shown as medium gray in
Some embodiments have been described in detail with particular reference to preferred embodiments thereof, but it will be understood by those skilled in the art that variations and modifications may be effected within the spirit and scope of the claims.
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20170298504 A1 | Oct 2017 | US |