Claims
- 1. A method of adherently depositing a thick film conductor composition on an aluminum nitride substrate comprising:
- (a) providing an aluminum nitride substrate;
- (b) applying a thick film conductor composition to such aluminum nitride substrate which includes: (i) a sufficient amount of conductive metallic material to render such thick film conductor composition electrically conductive when bonded to such aluminum nitride substrate, (ii) a glass frit binder for such conductive metallic material capable of being bonded to such aluminum nitride substrate, such glass frit binder comprising from about 27.0 to about 56.5 percent silicon dioxide, from 0 to about 47.0 percent barium oxide, from about 4.5 to about 25.0 percent boron oxide, from 0 to about 18.0 percent lead oxide, from 0 to about 15.0 percent zinc oxide, from about 3.0 to about 14.0 percent aluminum oxide, from 0 to about 3.0 percent zirconium oxide, from 0 to about 9.0 percent magnesium oxide, from 0 to about 12.0 percent calcium oxide, from 0 to about 3.0 percent fluorine, from 0 to about 3.0 percent potassium oxide, from 0 to about 3.0 percent sodium oxide, from 0 to about 4.0 percent tungsten oxide, and from 0 to about 4.0 percent lithium oxide, wherein barium oxide plus lead oxide is present in an amount of at least about 15.0 percent, zinc oxide plus calcium oxide plus aluminum oxide is present in an amount of at least about 5.0 percent, calcium oxide plus magnesium oxide plus barium oxide is present in an amount of at least about 7.0 percent, calcium oxide plus magnesium oxide plus zirconium oxide is present in an amount of at least about 1.0 percent, zirconium oxide plus calcium oxide plus barium oxide is present in an amount of at least about 7.0 percent, and potassium oxide plus sodium oxide plus lead oxide or barium oxide is present in an amount of at least about 10.0 percent, (iii) a lithium containing adhesion compound capable of reacting with such aluminum nitride substrate upon heating so as to bond such thick film conductor composition to such aluminum nitride substrate, such lithium containing compound consisting of at least one compound selected from the group consisting of lithium carbonate, lithium hydroxide, =lithium fluoride, lithium metaborate, lithium nitride, lithium peroxide, lithium benzoate, lithium oxalate, lithium amide, lithium methoxide, lithium hydride, lithium oxide and lithium nitrate; and (iv) an organic dispersion medium for such thick film conductor composition; and
- (c) heating such so-applied thick film conductor composition to cause such lithium containing adhesion compound to react with such aluminum nitride substrate to promote adhesion between such thick film conductor composition and such aluminum nitride substrate.
- 2. A method as set forth in claim 1 wherein such conductive metallic material comprises a conductive metal selected from the group consisting of Au, Cu, Ag, Pd, Pt and alloys thereof.
- 3. A method as set forth in claim 1 wherein such conductive metallic material is present, in an amount ranging from about 80 percent to about 99 percent by weight of such thick film conductor composition; such glass frit is present in an amount ranging from a trace amount to about 10 percent by weight of such thick film conductor composition; and such lithium containing compound is present in an amount ranging from a trace amount to about 4 percent by weight of such thick film conductor composition.
- 4. A method as set forth in claim 1 wherein such organic dispersing medium is present, in weight percent, in an amount ranging from about 5 percent to about 20 percent of the total weight of such thick film conductor composition.
- 5. A method as set forth in claim 1 wherein such conductive metallic material is gold.
- 6. A method as set forth in claim 1 wherein such conductive metallic material is silver.
- 7. A method as set forth in claim 1 wherein such conductive metallic material is copper.
- 8. A method as set forth in claim 1 wherein the particle size of such conductive metallic material ranges from about 0.5 micron to about 15.0 microns.
- 9. A method as set forth in claim 1 wherein the particle size of such conductive metallic material ranges from about 1 to about 5 microns.
- 10. A method as set forth in claim 1 wherein such glass frit comprises:
- ______________________________________ Compositional RangeComponent [(] in weight percent [)]______________________________________SiO.sub.2 37-56.5BaO 0-24B.sub.2 O.sub.3 [4-14] 4.5-25.0PbO 0-18ZnO 0-12.2Al.sub.2 O.sub.3 3-10ZrO.sub.2 0-3MgO 0-6CaO 0-8Fluorine 0-3K.sub.2 O 0-3Na.sub.2 O 0-3LiO.sub.2 0-3______________________________________
- 11. A method as set forth in claim 1 wherein such glass frit comprises:
- ______________________________________ Compositional RangeComponent [(] in weight percent [)]______________________________________SiO.sub.2 38-45BaO 10-24B.sub.2 O.sub.3 7-14PbO 0-17ZnO 5-12.2Al.sub.2 O.sub.3 3-8ZrO.sub.2 0-3MgO 0-6CaO 0-7Fluorine 0-3LiO.sub.2 0-3______________________________________
- 12. A method as set forth in claim 1 wherein such glass frit comprises:
- ______________________________________ Compositional RangeComponent [(] in weight percent [)]______________________________________SiO.sub.2 28-45BaO 20-40B.sub.2 O.sub.3 7-20Al.sub.2 O.sub.3 [2-14] 3-14ZrO.sub.2 0-3MgO 0-8WO.sub.3 0-4______________________________________
- 13. A method as set forth in claim 1 wherein such glass frit comprises:
- ______________________________________ Compositional RangeComponent [(] in weight percent [)]______________________________________SiO.sub.2 28.4B.sub.2 O.sub.3 19.2BaO 39.2Al.sub.2 O.sub.3 8.6ZrO.sub.2 1.6WO.sub.3 3.0______________________________________
- 14. A method as set forth in claim 1 wherein such glass frit comprises in weight percent, from about 36.0 to about 43.0 percent silicon dioxide, from about 20.0 to about 25.0 percent barium oxide, from about 10.0 to about 16.0 percent boron oxide, from about 9.0 to about 14.0 percent zinc oxide, from about 3.0 to about 8.0 percent aluminum oxide, from about 0 to about 3.0 percent zirconium oxide, and from about 0 to about 6.0 percent magnesium oxide, wherein zirconium oxide plus magnesium oxide is present in an amount of at least about 1.0 percent.
- 15. A method as set forth in claim 1 wherein such glass frit comprises, in weight percent, from about 40.0 to about 48.0 percent silicon dioxide, from about 8.0 to about 16.0 percent barium oxide, from about 6.0 to about 11.0 percent boron oxide, from about 8.0 to about 18.0 percent lead oxide, from about 0 to about 5.0 percent zinc oxide, from about 3.0 to about 7.0 percent aluminum oxide, from 0 to about 3.0 percent zirconium oxide, from 0 to about 6.0 percent magnesium oxide, from about 2.0 to about 8.0 percent calcium oxide, from 0 to about 3.0 percent fluorine, and from 0 to about 3.0 percent lithium oxide, wherein zinc oxide plus calcium oxide is present in an amount of at least about 5.0 percent, magnesium oxide plus calcium oxide is present in an amount of at least about 5.0 percent, zinc oxide plus calcium oxide is present in an amount of at least about 3.0 percent, fluorine plus lead oxide is present in an amount of at least about 9.0 percent and lithium oxide plus lead oxide is present in an amount of at least about 10.0 percent.
- 16. A method as set forth in claim 1 wherein such glass frit comprises, in weight percent, from about 28.0 to about 38.0 percent silicon dioxide, from about 35.0 to about 40.0 percent barium oxide, from about 7.0 to about 20.0 percent boron oxide, from about 8.0 to about 14.0 percent aluminum oxide, from 0 to about 2.0 percent zirconium oxide, and from 0 to about 4.0 percent tungsten oxide, wherein zirconium oxide plus tungsten oxide is present in an amount of at least about 1.0 percent.
- 17. A method as set forth in claim 1 wherein such glass frit comprises, in weight percent, from about 50.0 to about 56.5 percent silicon dioxide, from 0 to about 5.0 percent barium oxide, from about 4.5 to about 25.0 percent boron oxide, from about 10.0 to about 18.0 percent lead oxide, from about 7 to about 11.0 percent aluminum oxide, from about 7 to about 12.0 percent calcium oxide, and from 0 to about 3.0 percent potassium oxide, wherein barium oxide plus calcium oxide is present in an amount of at least about 9.0 percent, potassium oxide plus calcium oxide is present in an amount of at least about 8.0 percent.
RELATED APPLICATIONS
This application is a continuation of application Ser. No. 07,823,320, filed Jan. 21, 1992, now abandoned, which is a divisional application of application Ser. No. 07/091,081, filed Aug. 31, 1987 entitled "Thick Film Conductor Compositions For Use With An Aluminum Nitride Substrate" which issued as U.S. Pat. No. 5,089,172 on Feb. 18, 1992.
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Foreign Referenced Citations (3)
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Divisions (1)
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Number |
Date |
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Parent |
91081 |
Aug 1987 |
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Continuations (1)
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Number |
Date |
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823320 |
Jan 1992 |
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