Claims
- 1. A method of coating a substrate with a dense, transparent, electrically conductive, amorphous silicon carbide film which comprises;
- (A) providing a densified, electrically conductive silicon carbide sputtering target which consists essentially of (i)non-stoichiometric SiC.sub.x, wherein x is the molar ratio of C to Si, and x is greater than about 1.1 but less than 1.20, the excess carbon being present as graphite, amorphous carbon or mixtures thereof, and (ii) between 0.3 to 3.0 wt % boron, the target being characterized by a resistivity of less than 10 ohm-cm and a density of at least 90% of theoretical density; and
- (B) sputtering the sputtering target via DC magnetron sputtering carried out at a power density of from about 90 watts/in.sup.2 to about 320 watts/in.sup.2 to deposit a film on the substrate at a rate of at least 10 Angstroms/second.
- 2. The method of claim 1 in which DC magnetron sputtering is used and is carried out under a pressure of about 5 mtorr and a power density of about 25 watts/in.sup.2.
- 3. The method of claim 1 wherein the boron is present in an amount of about 0.7 wt % as boron carbide.
- 4. The method of claim 1 wherein the target has a theoretical density of at least 95% of theoretical density.
- 5. The method of claim 1 wherein the target has an electrical resistivity of no more than 2 ohm-cm.
Parent Case Info
This is a divisional of application Ser. No. 08/708,910 filed on Sep. 5, 1996 now abandoned, which is a file wrapper continuation of U.S. Ser. No. 08/454,880 filed on May 31, 1995 (now abandoned), which was a divisional application of U.S. Ser. No. 08/184,517 filed on Jan. 21, 1994, pending.
US Referenced Citations (16)
Foreign Referenced Citations (1)
Number |
Date |
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0 144 055 |
Jun 1985 |
EPX |
Divisions (2)
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Number |
Date |
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Parent |
708910 |
Sep 1996 |
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Parent |
184517 |
Jan 1994 |
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Continuations (1)
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454880 |
May 1995 |
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