Claims
- 1. A method of determining capacitances, the method which comprises:(a) providing a grid-shaped configuration of capacitors, the capacitors being formed by pairs of electrical conductor surfaces; (b) dividing the electrical conductor surfaces into groups; (c) electrically conductively connecting the electrical conductor surfaces of in each case one of the groups to one another by a respective read line; (d) electrically conductively connecting the electrical conductor surfaces of in each case one of the groups separately from one another to a respective control line; (e) applying, during a given time, an electric potential to the respective control line such that a potential difference is present between the respective control line and a plurality of read lines and charging, with the potential difference, the capacitors formed in each case by at least one of the electrical conductor surfaces connected to the respective control line and at least one of the electrical conductor surfaces connected to one of the read lines; (f) carrying off a charge via each of the read lines separately to a respective collecting capacitor; (g) switching off the electric potential applied to the respective control line and impressing, at low resistance, a respective potential onto a respective one of the read lines by using a circuit, the respective potential defining a charge state of the respective collecting capacitor with respect to a reference potential; (h) repeating steps (e) to (g) until a given number of charge operations has taken place; and (i) subsequently determining for each of the read lines one of a charge of the respective collecting capacitor and a potential difference of the respective collecting capacitor.
- 2. The method according to claim 1, which comprises:performing step (9) by using in each case a feedback operational amplifier; and switching, between in each case one of the capacitors to be measured and the respective collecting capacitor, an output of the feedback operational amplifier to the respective read line, at the latest at a point in time at which the electric potential applied to the respective control line is switched off.
- 3. The method according to claim 2, which comprises:using, as the feedback operational amplifier, a circuit configuration including two p-channel MOSFETs and three n-channel MOSFETs; connecting source terminals of the p-channel MOSFETs and a drain terminal of a first one of the n-channel MOSFETs to a terminal of a supply voltage; connecting drain terminals of the p-channel MOSFETs to drain terminals of a second and a third one of the n-channel MOSFETs respectively; connecting gate terminals of the p-channel MOSFETs to one another and to a drain terminal of the third one of the n-channel MOSFETs; connecting source terminals of the second and third one of the n-channel MOSFETs to one another and via a current source to a further terminal of the supply voltage; connecting a gate terminal of the first one of the n-channel MOSFETs to a drain terminal of the second one of the n-channel MOSFETs; connecting a source terminal of the first one of the n-channel MOSFETs to a gate terminal of the second one of the n-channel MOSFETs and via a further current source to the further terminal of the supply voltage; using the source terminal of the first one of the n-channel MOSFETs as an output of the circuit configuration; and using a gate terminal of the third one of the n-channel MOSFETs as an input of the circuit configuration.
- 4. The method according to claim 1, which comprises:providing a structured image surface including the grid-shaped configuration of capacitors; and performing a capacitive image sensing by using steps (a) to (i).
- 5. A method of determining capacitances, the method which comprises:(a) providing a grid-shaped configuration of capacitors, the capacitors being formed by pairs of electrical conductor surfaces; (b) dividing the electrical conductor surfaces into groups; (c) electrically conductively connecting the electrical conductor surfaces of in each case one of the groups to one another by a respective read line; (d) electrically conductively connecting the electrical conductor surfaces of in each case one of the groups separately from one another to a respective control line; (e) applying, during a given time, an electric potential to the respective control line such that a potential difference is present between the respective control line and a plurality of read lines and charging, with the potential difference, the capacitors formed in each case by at least one of the electrical conductor surfaces connected to the respective control line and at least one of the electrical conductor surfaces connected to one of the read lines; (f) carrying off a charge via each of the read lines separately to a respective collecting capacitor; (g) switching off the electric potential applied to the respective control line and impressing, at low resistance, a respective potential onto a respective one of the read lines by using a circuit, the respective potential defining a charge state of the respective collecting capacitor with respect to a reference potential; (h) repeating steps (e) to (g) until a potential difference which is greater than a given value is present at the respective collecting capacitor; and (i) subsequently determining for each of the read lines a number of performed charge operations.
- 6. The method according to claim 5, which comprises:performing step (9) by using in each case a feedback operational amplifier; and switching, between in each case one of the capacitors to he measured and the respective collecting capacitor, an output of the feedback operational amplifier to the respective read line, at the latest at a point in time at which the electric potential applied to the respective control line is switched off.
- 7. The method according to claim 6, which comprises:using, as the feedback operational amplifier, a circuit configuration including two p-channel MOSFETs and three n-channel MOSFETs; connecting source terminals of the p-channel MOSFETs and a drain terminal of a first one of the n-channel MOSFETs to a terminal of a supply voltage; connecting drain terminals of the p-channel MOSFETs to drain terminals of a second and a third one of the n-channel MOSFETs respectively; connecting gate terminals of the p-channel MOSFETs to one another and to a drain terminal of the third one of the n-channel MOSFETs; connecting source terminals of the second and third one of the n-channel MOSFETs to one another and via a current source to a further terminal of the supply voltage; connecting a gate terminal of the first one of the n-channel MOSFETs to a drain terminal of the second one of the n-channel MOSFETs; connecting a source terminal of the first one of the n-channel MOSFETs to a gate terminal of the second one of the n-channel MOSFETs and via a further current source to the further terminal of the supply voltage; using the source terminal of the first one of the n-channel MOSFETs as an output of the circuit configuration; and using a gate terminal of the third one of the n-channel MOSFETs as an input of the circuit configuration.
- 8. The method according to claim 5, which comprises:providing a structured image surface including the grid-shaped configuration of capacitors; and performing a capacitive image sensing by using steps (a) to (i).
Priority Claims (1)
Number |
Date |
Country |
Kind |
198 33 211 |
Jul 1998 |
DE |
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CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of copending International Application No. PCT/DE99/01930, filed Jul. 1, 1999, which designated the United States.
US Referenced Citations (6)
Number |
Name |
Date |
Kind |
3781855 |
Killen |
Dec 1973 |
A |
4039940 |
Butler et al. |
Aug 1977 |
A |
5343157 |
Deschamps |
Aug 1994 |
A |
6114862 |
Tartagni et al. |
Sep 2000 |
A |
6317508 |
Kramer et al. |
Nov 2001 |
B1 |
6346739 |
Lepert et al. |
Feb 2002 |
B1 |
Foreign Referenced Citations (9)
Number |
Date |
Country |
34 13 849 |
Aug 1985 |
DE |
35 44 187 |
Jun 1987 |
DE |
39 42 159 |
Jun 1991 |
DE |
42 37 196 |
Feb 1994 |
DE |
198 33 211 |
Feb 2000 |
DE |
0 041 693 |
Dec 1981 |
EP |
0 779 497 |
Jun 1997 |
EP |
8 503 252-2 |
Feb 1987 |
SE |
WO 0005592 |
Feb 2000 |
WO |
Non-Patent Literature Citations (1)
Entry |
Marco Tartagni et al.: “A Fingerprint Sensor Based on the Feedback Capacitive Sensing Scheme”, IEEE Journal of Solid-State Circuits, No. 1, Jan. 1998, pp. 133-142, XP-000766627. |
Continuations (1)
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Number |
Date |
Country |
Parent |
PCT/DE99/01930 |
Jul 1999 |
US |
Child |
09/767392 |
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US |