Number | Date | Country | Kind |
---|---|---|---|
97-46397 | Sep 1997 | KRX |
Number | Name | Date | Kind |
---|---|---|---|
4454526 | Nishizawa | Jun 1984 | |
4733287 | Bower | Mar 1988 | |
4800415 | Simmons et al. | Jan 1989 | |
4803176 | Bower | Feb 1989 | |
5060047 | Jaume et al. | Oct 1991 | |
5410177 | Harmel et al. | Apr 1995 | |
5424563 | Temple et al. | Jun 1995 | |
5608237 | Aizawa et al. | Mar 1997 | |
5773868 | Endo | Jun 1998 | |
5923071 | Saito | Jul 1999 |
Entry |
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Takeshi Matsushita et al., "Highly Reliable High-Voltage Transistors by Use of the SIPOS Process", IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976. |
A. Mimura et al., "High-Voltage Planar Structure Using SiO2-SIPOS-SiO2 Film", IEEE Electron Device Letters, vol. EDL-6, No. 4, Apr. 1985. |
D. Jaume et al., "High-Voltage Planar Devices Using Field Plate and Semi-Resistive Layers", IEEE Transactions on Electron Devices, vol. 38, No. 7, Jul. 1991. |