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H01L29/405

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/405Resistive arrangements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,211,933
- Issue date Jan 28, 2025
- Kabushiki Kaisha Toshiba
- Takuo Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,906
- Issue date Apr 16, 2024
- Kabushiki Kaisha Toshiba
- Takuo Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an isolation region having an edge b...
- Patent number 11,854,863
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Te-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,735,584
- Issue date Aug 22, 2023
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage resistor with high voltage junction termination
- Patent number 11,676,997
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having gate resistors with low variation in r...
- Patent number 11,664,436
- Issue date May 30, 2023
- Wolfspeed, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with ion- or fixed charge-based field plate structures
- Patent number 11,658,217
- Issue date May 23, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,605,706
- Issue date Mar 14, 2023
- Denso Corporation
- Motoo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional switches with active substrate biasing
- Patent number 11,594,626
- Issue date Feb 28, 2023
- GLOBALFOUNDRIES U.S. INC.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with insulated gate transistor cell and rectif...
- Patent number 11,588,048
- Issue date Feb 21, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 11,581,409
- Issue date Feb 14, 2023
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,430,784
- Issue date Aug 30, 2022
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having resistive field plate
- Patent number 11,424,356
- Issue date Aug 23, 2022
- Raytheon Company
- Brian Thomas Appleton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Series resistor over drain region in high voltage device
- Patent number 11,410,991
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ker Hsiao Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,380,790
- Issue date Jul 5, 2022
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor arrangement and method of producing thereof
- Patent number 11,245,002
- Issue date Feb 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,183,569
- Issue date Nov 23, 2021
- Renesas Electronics Corporation
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having field plate and associated fabricati...
- Patent number 11,158,739
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cellular insulated gate power device with edge design to prevent fa...
- Patent number 11,145,717
- Issue date Oct 12, 2021
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enclosed gate runner for eliminating miller turn-on
- Patent number 11,127,845
- Issue date Sep 21, 2021
- Delta Electronics, Inc.
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor device and method of manufacturing oxide semico...
- Patent number 10,971,634
- Issue date Apr 6, 2021
- Mitsubishi Electric Corporation
- Yohei Yuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 10,957,771
- Issue date Mar 23, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trenches formed in transistor or dio...
- Patent number 10,930,647
- Issue date Feb 23, 2021
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Series resistor over drain region in high voltage device
- Patent number 10,923,467
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ker Hsiao Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,923,561
- Issue date Feb 16, 2021
- Denso Corporation
- Motoo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical resistor adjacent inactive gate over trench isolation
- Patent number 10,923,469
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with metal filled deep sinker contact for CSP
- Patent number 10,903,345
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Yufei Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic apparatus
- Patent number 10,879,348
- Issue date Dec 29, 2020
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Takaaki Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,872,958
- Issue date Dec 22, 2020
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD-PLATED RESISTOR
- Publication number 20240405018
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Zachary K Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240363697
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-An Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device and manufacturing method thereof
- Publication number 20240250131
- Publication date Jul 25, 2024
- CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 24 RESEARCH INSTITUTE
- Kaizhou TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240222499
- Publication date Jul 4, 2024
- Kabushiki Kaisha Toshiba
- Takuo KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240204062
- Publication date Jun 20, 2024
- Rohm Co., Ltd.
- Chikara TERADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20240096689
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TE-AN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS DEVICE WITH RESISTIVE FIELD PLATE FOR REALIZING CONDUCTANCE MOD...
- Publication number 20240038853
- Publication date Feb 1, 2024
- No. 24 Research Institute of China Electronics Technology Group Corporation
- Kaizhou TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION
- Publication number 20240014260
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED-DIELECTRIC MOSFET DEVICE WITH RESISTIVE-FIELD-PLATE AND PREP...
- Publication number 20230411464
- Publication date Dec 21, 2023
- No. 24 Research Institute of China Electronics Technology Group Corporation
- Kaizhou TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361111
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURE OF SUPER-JUNCTION POWER DEVICE
- Publication number 20230352576
- Publication date Nov 2, 2023
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and Power Circuit
- Publication number 20230299079
- Publication date Sep 21, 2023
- Huawei Digital Power Technologies Co., Ltd.
- Wentao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230290838
- Publication date Sep 14, 2023
- Samsung Electronics Co., Ltd.
- Taehun MYUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230275133
- Publication date Aug 31, 2023
- Mitsubishi Electric Corporation
- Takuichiro SHITOMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING GATE RESISTORS WITH LOW VARIATION IN R...
- Publication number 20230268407
- Publication date Aug 24, 2023
- Wolfspeed, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR UNIT, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS
- Publication number 20230178612
- Publication date Jun 8, 2023
- Sony Semiconductor Solutions Corporation
- KATSUHIKO TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230127486
- Publication date Apr 27, 2023
- Mitsubishi Electric Corporation
- Ayanori GATTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE INCLUDING A DEVICE
- Publication number 20230088305
- Publication date Mar 23, 2023
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230090314
- Publication date Mar 23, 2023
- Rohm Co., Ltd.
- Shusaku FUJIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20220415706
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- TE-AN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220392891
- Publication date Dec 8, 2022
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220302304
- Publication date Sep 22, 2022
- Kabushiki Kaisha Toshiba
- Takuo KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING GATE RESISTORS WITH LOW VARIATION IN R...
- Publication number 20220278212
- Publication date Sep 1, 2022
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCHES WITH ACTIVE SUBSTRATE BIASING
- Publication number 20220254910
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220216310
- Publication date Jul 7, 2022
- Sanken Electric Co., Ltd
- Taro KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING RESISTIVE FIELD PLATE
- Publication number 20210288170
- Publication date Sep 16, 2021
- Raytheon Company
- Brian Thomas Appleton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INSULATED GATE TRANSISTOR CELL AND RECTIF...
- Publication number 20210273088
- Publication date Sep 2, 2021
- INFINEON TECHNOLOGIES AG
- Thomas BASLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210184035
- Publication date Jun 17, 2021
- SOCIONEXT INC.
- Hidetoshi TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SERIES RESISTOR OVER DRAIN REGION IN HIGH VOLTAGE DEVICE
- Publication number 20210175227
- Publication date Jun 10, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ker Hsiao Huo
- H01 - BASIC ELECTRIC ELEMENTS

Resistive arrangements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device including an isolation region having an edge b...

Semiconductor device

High voltage resistor with high voltage junction termination

Semiconductor devices having gate resistors with low variation in r...

Transistors with ion- or fixed charge-based field plate structures

Semiconductor device

Bidirectional switches with active substrate biasing

Semiconductor device with insulated gate transistor cell and rectif...

Transistor device with a field electrode that includes two layers

Semiconductor device

Transistor having resistive field plate

Series resistor over drain region in high voltage device

Semiconductor device

Superjunction transistor arrangement and method of producing thereof

Semiconductor device and method of manufacturing the same

Semiconductor structure having field plate and associated fabricati...

Cellular insulated gate power device with edge design to prevent fa...

Enclosed gate runner for eliminating miller turn-on

Oxide semiconductor device and method of manufacturing oxide semico...

Transistor device with a field electrode that includes two layers

Semiconductor device including trenches formed in transistor or dio...

Series resistor over drain region in high voltage device

Semiconductor device

Vertical resistor adjacent inactive gate over trench isolation

Power MOSFET with metal filled deep sinker contact for CSP

Semiconductor device and electronic apparatus

Semiconductor device

Patents Applicationslast 30 patents

FIELD-PLATED RESISTOR

SEMICONDUCTOR DEVICE

QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES

Power semiconductor device and manufacturing method thereof

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

MOS DEVICE WITH RESISTIVE FIELD PLATE FOR REALIZING CONDUCTANCE MOD...

HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION

SHARED-DIELECTRIC MOSFET DEVICE WITH RESISTIVE-FIELD-PLATE AND PREP...

SEMICONDUCTOR DEVICE

TERMINATION STRUCTURE OF SUPER-JUNCTION POWER DEVICE

Diode and Power Circuit

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES HAVING GATE RESISTORS WITH LOW VARIATION IN R...

SEMICONDUCTOR UNIT, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DIE INCLUDING A DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES HAVING GATE RESISTORS WITH LOW VARIATION IN R...

BIDIRECTIONAL SWITCHES WITH ACTIVE SUBSTRATE BIASING

SEMICONDUCTOR DEVICE

TRANSISTOR HAVING RESISTIVE FIELD PLATE

SEMICONDUCTOR DEVICE WITH INSULATED GATE TRANSISTOR CELL AND RECTIF...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SERIES RESISTOR OVER DRAIN REGION IN HIGH VOLTAGE DEVICE