This application claims the priority benefit of Taiwan application serial no. 94133683, filed on Sep. 28, 2005. All disclosure of the Taiwan application is incorporated herein by reference.
1. Field of the Invention
The present invention relates to a method of fabricating a semiconductor component, and more particularly, to a method of fabricating a shallow trench isolation structure.
2. Description of the Related Art
Along with the improvement of semiconductor technology, the scale of the semiconductor component continuously decreases and steps into the sub micron field or even a smaller scale range. Accordingly, the isolation between components becomes a very important issue as the isolation can effectively prevent the neighboring components from being short circuited. In general, a local oxidation of silicon (LOCOS) method is commonly used to add an insulation layer between the components. However, the LOCOS method has some disadvantages such as the problems related to the stress, or the bird's beak formed on the periphery of the isolation structure. Wherein, the bird's beak is a major obstacle that prevents the integrity of the component from further improving. Consequently, the most popular method used in the industry is the shallow trench isolation (STI) fabricating process.
FIGS. 1A˜1B are the schematic sectional views illustrating a conventional process of fabricating a shallow trench isolation structure. First, referring to
Then, referring to
However, the side surface of the patterned pad 102, the substrate 100 and the liner layer 106 at the corner 112 of the trench 104 are commonly damaged while removing part of the insulation layer 108 by using the etching process. After the shallow trench isolation structure is totally completed, the current leakage easily occurs on the corner 112, which causes the problem of short circuit. Accordingly, the reliability of the components is impacted and the yield rate of the components is deteriorated.
In addition, since the depth of the insulation layer 108 that can be removed by the etching process is limited, the H/W (height/width) ratio of the etched space is too small. In other words, the depth of the insulation layer 108 etched by the etching process is too shallow, such that the thickness of the oxide layer 110 filled by the subsequent HDP CVD process is not thick enough, thus it is hard to sustain it.
Accordingly, how to prevent the side surface of the patterned pad 102, the substrate 100 and the liner layer 106 at the corner 112 of the trench 104 from being damaged and how to increase the thickness of the oxide layer 110 are the main subjects to be resolved by the present invention.
Therefore, it is an object of the present invention to provide a method of fabricating a shallow trench isolation structure for preventing the side surface of the patterned pad, the substrate and the liner layer at the corner of the trench from being damaged.
It is another object of the present invention to provide a method of fabricating a shallow trench isolation structure. An insulation layer is formed on the bottom of the trench, so as to decrease the H/W ratio of the trench, such that a sufficient space is reserved for forming another insulation layer.
The present invention provides a method of fabricating a shallow trench isolation structure. A substrate having a patterned pad layer is provided. A part of the substrate is removed by using the patterned pad layer as a mask and a trench is thus formed in the substrate. A first insulation layer is formed on the substrate, the patterned pad layer and the trench. A second insulation layer is formed on the first insulation layer and partially fills into the trench. A third insulation layer is formed on the substrate and fills with the trench. The third insulation layer on the patterned pad layer and the patterned pad layer are removed subsequently.
The present invention further provides a method of fabricating a shallow trench isolation structure. First, a substrate having a trench is provided. Then, a first insulation layer is formed on the substrate, and the first insulation layer partially fills in the trench. Then, an annealing process is performed to re-flow the first insulation layer. Afterwards, the first insulation layer on the substrate is removed, and a second insulation layer is formed on the first insulation layer by using the HDP CVD process.
In the present invention, since the insulation layer, e.g. borophospho-silicate glass (BPSG), is merely formed on the bottom of the trench, a sufficient space is reserved for filling the insulation layer subsequently formed by the HDP CVD process without having to use the etching process to remove part of the insulation layer. In other words, the thickness of the insulation layer formed by the HDP CVD process is thick enough in the trench, thus it is easily sustained and the damages on the pad layer, the liner layer and the substrate due to the etching are eliminated. In addition, before the BPSG insulation layer is formed, an insulation layer made of silicon oxide may be formed, and this insulation layer can prevent the dopants (e.g. B (boron) or phosphorus (P)) from out-diffusing. Accordingly, the reliability and the yield rate of the components are improved.
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention, and together with the description, serve to explain the principles of the invention.
FIGS. 1A˜1B are the schematic sectional views illustrating a conventional process of fabricating a shallow trench isolation structure.
FIGS. 2A˜2F are the schematic sectional views illustrating a process of fabricating a shallow trench isolation structure according to an embodiment of the present invention.
FIGS. 3A˜3D are the schematic sectional views illustrating a process of fabricating a shallow trench isolation structure according to another embodiment of the present invention.
FIGS. 2A˜2F are the schematic sectional views illustrating a process of fabricating a shallow trench isolation structure according to an embodiment of the present invention. First, referring to
Referring to
Referring to
Then, referring to
In an embodiment of the present invention, the depth of the trench 204 is about 3000˜5000 Å (angstroms), and the thickness of the insulation layer 208 formed on the bottom of the trench 204 is about 1500˜2500 Å, which is about ½˜⅔ height of the trench 204. In such case, a sufficient space is reserved in the trench 204 for subsequently filling the insulation layer 210. In other words, the insulation layer 210 subsequently filled into the trench 204 is thick enough, thus it is easy to be sustained. Moreover, since the insulation layer 208 has been filled into the trench 204 first, the H/W ratio of the trench for the insulation layer 210 is reduced. Thus, it can facilitate the filling of the insulation layer 210 and avoid the generation of voids therein.
Referring to
Then, referring to
FIGS. 3A˜3D are the schematic sectional views illustrating a process of fabricating a shallow trench isolation structure according to another embodiment of the present invention. First, referring to
Then, referring to
Referring to
Referring to
In summary, since the insulation layer 208 is merely formed on the bottom of the trench 204, a sufficient space is reserved in the trench 204 for filling the insulation layer 210. Accordingly, the thickness of the insulation layer 210 subsequently filled into the trench 204 is thick enough, thus it is easy to be sustained. Moreover, there is no need to use the etching process to remove part of the insulation layer 208 in advance, and consequently the patterned pad layer 202, the liner layer 205 and the substrate 200 are prevented from being damaged during the etching process, such that the current leakage or short circuit problem is resolved. Moreover, the insulation layer 208 is filled into the trench 204 first, such that the H/W ratio of the region where the insulation layer 210 to be filled into is decreased. Hence, it will be easier to fill the insulation layer 210 into the trench 204. Furthermore, the insulation layer 206 can prevent the dopants in the insulation layer 208 from out-diffusing. Accordingly, the reliability and the yield rate of the resultant components are improved.
Although the invention has been described with reference to a particular embodiment thereof, it will be apparent to one of the ordinary skills in the art that modifications to the described embodiment may be made without departing from the spirit of the invention. Accordingly, the scope of the invention will be defined by the attached claims not by the above detailed description.
Number | Date | Country | Kind |
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94133683 | Sep 2005 | TW | national |