Claims
- 1. In a method of forming SiC single crystals by growth from solution, the improvement comprising using molten lithium as the solvent.
- 2. The method of claim 1 wherein said solution is maintained at a temperature in the range of about 1330.degree. to about 1500.degree. C.
- 3. The method of claim 2 wherein said temperature is about 1330.degree. C.
- 4. A method of forming beta SiC single crystals which comprises holding an excess of polycrystalline SiC in contact with molten lithium at a temperature at which said polycrystalline SiC dissolves in said molten lithium and maintaining the resultant solution at said temperature for a time sufficient for beta SiC single crystals of the desired size to precipitate therefrom.
Government Interests
The invention described herein relates to a method of forming single crystals of silicon carbide, and more particularly to a method of forming single crystals of beta silicon carbide using liquid lithium as a solvent. It is a result of a contract with the Department of Energy.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
Pellegrini et al., Silicon Carbide-1973 Ed. Marshall, pp. 161-167, U.S.C. Press, Columbia S.C. 1974. |