Number | Date | Country | Kind |
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3-286202 | Oct 1991 | JPX |
Number | Name | Date | Kind |
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4902645 | Ohba | Feb 1990 |
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N. Kobayashi, et al., "Study on Mechanism of Selective Chem. Vap. Deposition of Tungsten", J. Appl. Phys. 69 (1991) p. 1013. |
H. Goto et al., Chemical Reaction and Film Characteristics of SiH.sub.2 F.sub.2 Reduced W-CVD Compared with SiH.sub.4 Reduction Process, Advanced Metallization for ULSI Applications, Japan Conference, pp. 37-38, Oct. 28-30, 1991. |