The present disclosure relates to the technical field of ingot processing, and in particular, to a method of growing an ingot.
In the related art, the production of crystal silicon using CCZ (Continuous Czocharlski method) usually uses a double crucible or a quartz ring to separate a charge melting zone from a growth zone. However, during the growth of ingots, there are still problems of inhomogeneous melt of the melt zone and the growth zone and poor ingot quality, and it is easy to spatter during charge, causing the ingots not easy to grow.
The present disclosure is intended to resolve at least one of the technical problems in the prior art. For this purpose, the present disclosure provides a method of growing an ingot. The method of growing the ingot may make the melt in the crucible more uniform, thereby improving the quality of ingots.
The method of growing the ingot according to the present disclosure includes the following steps: S1, providing an initial charge in a crucible; S2, heating the crucible to melt the initial charge, and after a set time, rotating the crucible at a rotation speed within a set speed range, so as to homogenize a temperature of melt in the crucible; step S3, after a melting process of the charge is completed, descending a feed device to a position above a melt level in the crucible and to a distance h from the melt level, the feed device including a feed tube, and the feed tube adding a charge to a feed zone of the crucible; and S4, feeding in the feed zone, and growing an ingot in a growth zone. The crucible includes a first crucible, a second crucible and a third crucible. A containing space is defined in the first crucible, and a top side of the containing space is disposed in an open manner. The second crucible is disposed in the containing space and defines a first chamber together with the first crucible. The third crucible is disposed in the second crucible and defines a second chamber together with the second crucible. A third chamber is defined in the third crucible. A first through hole is formed on the second crucible, so as to communicate the first chamber and the second chamber. A second through hole is formed on the third crucible, so as to communicate the second chamber and the third chamber. The first chamber is adapted to be constructed as the feed zone. The growth zone is located in the third chamber. In S1, the initial charge is separately loaded into the first chamber, the second chamber and the third chamber. A particle diameter of the initial charge in the first chamber is greater than a particle diameter of the initial charge in the second chamber and in the third chamber.
According to the method of growing the ingot of the present disclosure, in a charge-loading process, by designing the particle diameter of the initial charge in the first chamber R1 to be greater than the particle diameter of the initial charge in the second chamber and the third chamber, it is easy to be ensured that there is enough initial charge contained in the second chamber and the third chamber, and growing the ingot is prevented from being affected caused by generating air bubbles in the second chamber and the third chamber during charge melting, thereby ensuring the quality of ingot. During charge melting, by setting the crucible to maintain rotating at a speed within the set speed range, so as to homogenize a temperature of the melt in the crucible, the melt in the crucible is more uniform, thereby further improving the quality of the ingots.
In some embodiments, a rotation speed ranges from 0.2 r/m to 3 r/m within the set speed range.
In some embodiments, the distance h meets the following: 2 mm ≤ h ≤ 4 mm.
In some embodiments, S4 includes: S41, seed: immersing a part of a seed below the melt level of the crucible, and starting a magnetic field apparatus; S42, neck: pulling the seed at the speed within a set range for neck, so as to eliminate dislocation; S43, crown and shoulder: controlling heating power and a pulling speed of the seed, so as to increase a diameter of the ingot to a set diameter; and S44, body and feeding: producing equal-diameter growing of the ingot in the growth zone, in the feed zone, adding the charge to the feed zone of the crucible by the feed tube, and controlling a feeding amount of the feed device to be equal to a yield of the ingot, so as to maintain the constant melt level. The crucible is installed in a furnace body of a monocrystal furnace, and the magnetic field apparatus is installed outside the furnace body and generates magnetic fields.
In some embodiments, in S1, before the charge is provided in the crucible, a heater and an insulation layer are successively mounted in the furnace body. The heater is configured to heat the crucible. The insulation layer is located outside the heater. A crucible shaft is raised to a first height position, and the crucible is mounted to the crucible shaft. The crucible shaft is mounted to the furnace body in a liftable manner, and is used to drive the crucible to rotate. After the charge is provided in the crucible, the crucible shaft is descended to a second height position, and a reflector is mounted in the furnace body; and the reflector is configured to separate the growth zone.
In some embodiments, the furnace body includes a body and an upper cover. The heater, the insulation layer, the crucible shaft and the reflector are all mounted on the body. The method of growing the ingot further includes: S5, installing a cooling jacket and the feed device to the upper cover, fixing the upper cover on the body, and then vacuumizing the furnace body, wherein the cooling jacket is configured to cool the ingot, and S5 is between S1 and S2.
In some embodiments, an aperture of the first through hole is d1, and an aperture of the second through hole is d2, where d1 and d2 meet: d1 < d2.
In some embodiments, the first through hole is formed at a bottom of the second crucible and is adjacent to an R angle of the second crucible. There are a plurality of first through holes, and the plurality of first through holes include a first feeding hole and a second feeding hole. The second feeding hole is located above the first feeding hole.
In some embodiments, the first crucible includes a crucible bottom wall and a crucible sidewall. The crucible sidewall extends upwards from an edge of the crucible bottom wall and defines the containing space together with the crucible bottom wall. Both the second crucible and the third crucible are formed as cylindric structures. The second crucible is fitted with the crucible bottom wall in a limited manner by a first mortise and tenon structure. The third crucible is fitted with the crucible bottom wall in a limited manner by a second mortise and tenon structure.
In some embodiments, a top end of the first crucible and a top end of the second crucible are disposed flush with each other and are both located above a top end of the third crucible.
In some embodiments, the crucible further includes a fourth crucible. The fourth crucible is disposed in the third chamber so as to separate the third chamber into a first sub-chamber and a second sub-chamber. A third through hole is formed on the fourth crucible, so as to communicate the first sub-chamber and the second sub-chamber. The second sub-chamber communicates with the second chamber by the second through hole. The first sub-chamber is adapted to be constructed as the growth zone, and the second chamber is adapted to be constructed as a dopant feed zone. In S1, the particle diameter of the initial charge in the first chamber is greater than the particle diameter of the initial charge in the first sub-chamber and the second sub-chamber. The feed device further includes a dopant feed tube. In S3, the feed tube is disposed corresponding to the feed zone, so as to cause the feed tube to add the charge to the first sub-chamber. The dopant feed tube is corresponding to the dopant feed zone, so as to cause the dopant feed tube to add dopants to the second sub-chamber.
In some embodiments, an aperture of the first through hole is d1, the aperture of the second through hole is d2, and an aperture of the third through hole is d3, where d1, d2 and d3 meet: d1 < d2 < d3.
In some embodiments, a top end of the first crucible, a top end of the second crucible and a top end of the third crucible are flush with each other and are all located above a top end of the fourth crucible.
In some embodiments, the crucible further includes a tray. The tray is supported at a bottom of the first crucible. A top end of the tray is located below a top end of the first crucible, a top end of the second crucible and a top end of the third crucible. The first crucible includes a crucible bottom wall and a crucible sidewall. The crucible sidewall extends upwards from the crucible bottom wall and defines the containing space together with the crucible bottom wall. The top end of the tray is adapted to be located above the melt level in the containing space, and a height of a portion of the tray which is beyond the crucible bottom wall is half of a height of the first crucible.
Additional aspects and advantages of the present disclosure will be partially set forth in the following description, and in part will be apparent from the following description, or may be learned by practice of the present disclosure.
Embodiments of the present disclosure are described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals throughout the disclosure represent the same or similar elements or the elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are used to explain the present disclosure, but should not be construed as a limitation on the present disclosure.
The following disclosure provides many different embodiments or examples for implementing different structures of the present disclosure. In order to simplify the embodiments of the present disclosure, components and settings of specific examples are described below. Definitely, the above are merely examples and are not intended to limit the present disclosure. Furthermore, the present disclosure may repeat reference numerals and/or letters in different examples. The repetition is for simplicity and clarity, which itself does not indicate a relationship between the embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided in the present disclosure, but the ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials.
A method of growing an ingot according to the embodiments of the present disclosure is described below with reference to the drawings. “An ingot” may refer to crystal silicon, sapphire, or the like.
As shown in
For example, charge providing is first performed; the initial charge is loaded in the crucible 100; and based on the height of the melt level required by the crucible 100, the total mass of the initial charge required to be added in S1 is calculated. Then charge melting is performed; the crucible 100 is heated to melt the initial charge in the crucible 100, so as to melt the initial charge in the crucible 100 to a certain extent within the set time; after the initial charge is melted to a certain extent, the crucible 100 maintains to rotate at the rotation speed within the set speed range, so as to cause a temperature of the melt in the crucible 100 to be more homogenized, thereby it is benefit to improve the quality of ingots; in addition, the rotation of the crucible 100 causes the melt in the crucible 100 to be more homogenized. After the charge is completely melted, the feed device 101 is descended to the distance h above the melt level in the crucible 100; the feed tube 1011 adds the charge to a feed zone Ω1 of the crucible 100, and the feeding amount may make the height of the melt level in the crucible 100 reach a required height of the melt level; in addition, in a feeding process, there is a certain height difference between the feed device 101 and the melt level, such that there is an enough feeding space between the feed device 101 and the melt level, thereby facilitating the feed device 101 to add the charge to the crucible 100, and preventing the feed device 101 from immersing into the melt level during feeding. Finally, the charge is fed in the feed zone Ω1, and the ingot is growing in a growth zone Ω3 of the crucible 100, such that the charge is fed while the ingot is grown, thereby achieving the production of the ingots by CCZ (Continuous Czocharlski method).
It is to be noted that, in step S3, the feed device 101 is descended to the distance h above the melt level in the crucible 100, and then feeding is performed. Then “the melt level in the crucible 100” which is h away from the feed device 101 in a vertical direction may be understood as the position of the melt level in the crucible 100 before feeding.
As shown in
A first through hole 20 is formed on the second crucible 2, so as to communicate the first chamber R1 and the second chamber R2, such that the melt in the first chamber R1 may flow to the second chamber R2 by the first through hole 20, or the melt in the second chamber R2 may flow to the first chamber R1 by the first through hole 20. A second through hole 30 is formed on the third crucible 3, so as to communicate the second chamber R2 and the third chamber R3, such that the melt in the second chamber R2 is able to flow to the third chamber R3 by the second through hole 30.
As shown in
Wherein, in step S1, the loading of the initial charge in the crucible 100 is to separately load the initial charge in the first chamber R1, the second chamber R2 and the third chamber R3. The particle diameter of the initial charge in the first chamber R1 is greater than the particle diameter of the initial charge in the second chamber R2 and in the third chamber R3, such that the particle diameter of the initial charge in the first chamber R1 is relatively large, so as to ensure the loading rate of the first chamber R1; and the particle diameter of the initial charge in the second chamber R2 and the particle diameter of the initial charge in the third chamber R3 are relatively small, so as to contain enough initial charge in the second chamber R2 and the third chamber R3. In addition, gaps between initial charge particles in the second chamber R2 and in the third chamber R3 are relatively small, such that air bubbles are prevented from being generated during charge melting, and in particular, avoid a problem of affecting ingot growing due to generation of air bubbles in the third chamber R3.
It is to be noted that, in the method of growing the ingot, the steps may be sequential. For example, step S1, step S2, step S3 and step S4 are performed in order, so as to cause the “loading an initial charge in a crucible 100” in step S1 to be prior to the “heating the crucible 100 to melt the initial charge” in step S2, and the charge melting process in step S2 is to melt the initial charge added in the crucible 100 in step S1. The “rotating the crucible 100 at a rotation speed within a set speed range, so as to homogenize a temperature of the melt in the crucible 100” in step S2 is prior to the “descending a feed device 101 to a position above a melt level in the crucible 100 and to a distance h from the melt level” in step S3, and the discharging process in step S3 is prior to the feeding and ingot growing processes in step S4.
Therefore, according to the method of growing the ingot of the embodiments of the present disclosure, by means of, in a feeding process, designing the particle diameter of the initial charge in the first chamber R1 to be greater than the particle diameter of the initial charge in the second chamber R2 and the third chamber R3, it is ensured that there is enough initial charge contained in the second chamber R2 and the third chamber R3, and ingot growing is prevented from being affected caused by air bubbles generated in the second chamber R2 and the third chamber R3 during charge melting, thereby guaranteeing the quality of ingots. During charge melting, by setting the crucible 100 to maintain rotating at a rotation speed within the set speed range, so as to homogenize a temperature of the melt in the crucible 100, the melt in the crucible 100 is more homogenized, thereby it is beneficial to improve the quality of the ingots.
In some embodiments, in step S1, the particle diameter of the initial charge in the first chamber R1 is greater than 10 mm. For example, the particle diameter of the initial charge in the first chamber R1 may be greater than 50 mm, 60 mm, 70 mm, 100 mm or 200 mm. Therefore, the first chamber R1 has a low requirement for the particle diameter of the initial charge, thereby guaranteeing the feeding rate of the first chamber R1. The particle diameters of the initial charges in the second chamber R2 and the third chamber R3 are less than 10 mm, so as to avoid a problem of affecting ingot growing due to generation of air bubbles in the second chamber R2 and the third chamber R3.
In some embodiments, a rotation speed ranges from 0.2 r/m to 3 r/m (including endpoint values, where “r/m” is rotation per minute, or may be written as rpm) within the set rotation speed range. In this case, the rotation speed of the crucible 100 is relatively low, such that slight rotation of the crucible 100 is realized, thereby ensuring the homogenized effect of the temperature in the crucible 100. For example, after the set time, the rotation speed of the crucible 100 may be 0.2 r/m, 1.5 r/m, 2.3 r/m or 3 r/m. It is understandable that, the rotation speed of the crucible 100 may be maintained at a certain constant rotation speed value all the time, or may be adjusted within the range of 0.2 r/m-3 r/m according to a set mode. By the slight crucible rotation at a melting phase, the temperature of the melt in the crucible 100 may be more homogenized, thereby it is beneficial to improve the quality of the ingot. If the speed is too fast, melt level fluctuation may be caused; and if the speed is too small, the purpose of more homogenized temperature cannot be achieved.
In some embodiments, the distance h meets 2 mm≤ h ≤ 4 mm, such that h may be 2 mm, 3 mm or 4 mm. For example, h is 3 mm, and in step S3, the feed device 101 is descended to 3 mm above the melt level in the crucible 100. In this way, there is a suitable height difference between the feed device 101 and the melt level in the crucible 100, such that difficult growth of the ingots due to easy spattering of feeding caused by too high position of the feed device 101 is avoided, and the problem of easily polluting the melt in the crucible 100 due to the fact that the position of the feed device 101 is too low is avoided, thereby further ensuring the stable growth of the ingots and the quality of the ingots.
In some embodiments, as shown in
For example, in some embodiments, step S4 includes: about one third of the seed 102 in an axial direction is immersed into the melt of the crucible 100, and the magnetic field apparatus 103 is started (i.e. open). When the temperature is stabilized, neck is started. During neck, the seed 102 is lifted upwards with a speed within the set moving speed range, so as to control the diameter of a necking portion of the ingot. Then, heating power and the pulling speed of the seed 102 are controlled, so as to increase the diameter of the ingot to a set diameter. In this process, on the basis of controlling the shape of the ingot, geometry and an ingot growth angle are calculated by a length-width ratio, and the heating power and the pulling speed are controlled according to an empirical shape, to cause the shape of the ingot to reach a required angle, so as to complete crown and shoulder. When the diameter of the ingot is close to the set diameter and equal the set diameter, crown and shoulder are completed. In this case, the charge is added to the feed zone Ω1 of the crucible 100, such that the melt level is maintained to be constant in an equal-diameter, and the equal-diameter growth of the ingot is achieved, until the ingot is separated from the melt level.
As shown in
In step S44, when the crown and shoulder of the ingot are completed, the feed device 101 is opened, in this case, the ingot is grown in equal diameter, and the feeding amount of the feed device 101 is maintained to be equal to the added weight of the ingot. For example, for every 1 kg increase in the weight of the ingot, 1 kg of charge needs to be added to the crucible 100 from the feed device 101. That is to say, during the equal-diameter growth of the ingot, the decrease in mass of the melt due to the rise of the seed 102 at a certain height needs to be replenished accordingly by adding the same mass of the charge to the feed device 101. Therefore, the stable melt level is maintained during the growth of the ingot, the stable growth of the ingot is further guaranteed, and continuous feeding and growth of the ingot are realized, thereby it is easy to grow the ingots with large sizes. For example, the growth of crystal silicon may be received by continuous feeding, so as to solve the problem of segregation of heavily doped ingots easily.
For example, in an example of
For another example, in an embodiment of
In some embodiments, as shown in
Wherein, the second energized coil 1032 and the first energized coil 1031 have an opposite current direction, so as to make the magnetic field apparatus 103 generate a cusp-type magnetic field. Under the action of magnetic lines in the cusp-type magnetic field, magnetic lines of force between the first energized coil 1031 and the second energized coil 1032 are in “cusp-type” symmetrical distribution. For example, when the ingot grows, the solid-melt interface is located on a symmetrical surface between the first energized coil 1031 and the second energized coil 1032, such that most of the melt is inhibited by the magnetic field, thereby effectively reducing the generation of turbulence in the melt.
In some embodiments, as shown in
In some embodiments, in step S42, the range of the set moving speed is 2 mm/min-3 mm/min (including endpoint values), so as to guarantee the successful proceeding of neck. For example, in step S42, the seed 102 is controlled to be lifted upwards with a stable moving speed, to cause the diameter of the necking portion of the ingot to be between 5 mm-6 mm, so as to eliminate dislocation; and after the necking portion of the ingot reaches a certain length, for example, 200 mm, the heating power and the pulling speed of the seed 102 are controlled to perform crown and shoulder.
In some embodiments, as shown in
It is apparent that, the first height position is located above the second height position. After the crucible shaft 106 is descended to the second height position, the reflector 107 is then mounted, such that the initial charge that has been added into the crucible 100 is prevented from coming into contact with a bottom of the reflector 107, so as to guarantee the successful mounting of the reflector 107, and in addition, the cleanness of the initial charge in the crucible 100 is also guaranteed.
Therefore, step S1 may include: successively mounting the heater 104 and the first insulation layer 1051 in the furnace body 200, raising the crucible shaft 106 to the first height position, and mounting the crucible 100 to the crucible shaft 106; then providing the initial charge in the crucible 100, then descending the crucible shaft 106 to the second height position, and mounting the second insulation layer 1052 and the reflector 107 in the furnace body 200. Therefore, by appropriately setting the sequence of mounting and loading components in the furnace body 200, the components in the furnace body 200 are conveniently and successfully mounted, and the initial charge that has been added into the crucible 100 is prevented from contacting with other components in the furnace body 200.
In an embodiment, the first height position is a highest position attained by the crucible shaft 106, and the second height position is a lowest position attained by the crucible shaft 106.
For example, in an example of
For another example, in an example of
In addition, in an example of
In some embodiments, as shown in
Optionally, after the furnace body 200 is vacuumized, the pressure in the furnace body 200 is maintained between 20 torr and 50 torr, so as to better meet growth requirements of the ingots.
In some embodiments, the aperture of the first through hole 20 is d1, and the aperture of the second through hole 30 is d2, where d1 and d2 meet: d1 < d2, such that the aperture of the first through hole 20 is relatively small. For example, the aperture of the first through hole 20 is less than or equal to the diameter of the particle in the first chamber R1, such that the problem that yield is affected due to the fact that the particles directly enter into the second chamber R2 without being melted and then enter the third chamber R3 is avoided, thereby it is beneficial to guarantee the yield of the ingots. The aperture of the second through hole 30 is greater than the aperture of the first through hole 20, such that the melt is prevented from gathering in the second chamber R2, causing retention of the melt, so as to guarantee the flow of the melt to be smoother. In addition, the charge and the dopant in the second chamber R2 are mostly melted, and the aperture of the second through hole 30 is relatively large, such that solid-melt interface vibration caused by the retention of the melt is prevented from affecting the follow-up ingot growing process.
Wherein, in some embodiments, both the first through hole 20 and the second through hole 30 are formed as circular holes. Definitely, when at least one of the first through hole 20 and the second through hole 30 is formed as a non-circular hole, the aperture of at least one of the first through hole 20 and the second through hole 30 may be understood as an equivalent diameter.
In some embodiments, as shown in
Wherein, the R angle of the second crucible 2 may be understood as the corner of the second crucible 2. The position of the R angle of the crucible is well known to those skilled in the art and is not described herein again.
As shown in
Optionally, when feeding is performed in the first chamber R1, a feeding position may be located at a certain position of the first chamber R1, and the first feeding hole 20a may be located on a side of the second crucible 2 that is away from the feeding position.
It is to be noted that, the meaning of “multiple” is two or more. That “the second feeding hole 20b is located above the first feeding hole 20a” only indicates that the horizontal height of the second feeding hole 20b is higher than that of the first feeding holes 20a, which may mean that the second feeding hole 20b is located right above the first feeding hole 20a, or may mean that the second feeding hole 20b is located at an inclined upper portion of the first feeding hole 20a. In other words, in a circumferential direction of the second crucible 2, a relative position between the first feeding hole 20a and the second feeding hole 20b is specifically set according to a practical application, such that the central angle formed by the setting position of the first feeding hole 20a and the setting position of the second feeding hole 20b by using the center of the second crucible 2 as the center of a circle may range from 0° to 360° (including endpoint values).
For example, in an embodiment of
In some embodiments, as shown in
For example, in embodiments of
In some embodiments, as shown in
When the crucible 100 is applied to a monocrystal furnace, a cooling jacket 108 of the monocrystal furnace is disposed right above the growth zone Ω3; and on a plane perpendicular to a central axis of the crucible 100, an orthographic projection of the cooling jacket 108 is located within an orthographic projection range of the growth zone Ω3. By setting the height of the top end of the third crucible 3 to be relatively low relative to the height of the top end of the second crucible 2, the reflector 107 is disposed between the third crucible 3 and the cooling jacket 108, so as to separate the cooling jacket 108 from the third crucible 3, such that the growth of the ingots is prevented from being easily affected by the heat radiation generated by the high-temperature melt, thereby guaranteeing the solidification of the ingots. Definitely, the crucible 100 may be further applied to other devices.
In some embodiments, as shown in
Wherein, the diameter D1 of the first body 11, the diameter D2 of the second body 21 and the diameter D3 of the third body 31 meet an equation of Dn+1 = Dn*Xn, where n = 1 or 2, and 60%≤Xn≤80%. For example, Xn may be 60%, 70%, 80%, or the like.
Therefore, if D2 = D1*X1, 60%≤X1≤80%, it is ensured that the first chamber R1 has enough feeding space, such that the appropriate feeding amount of the charge is easy to implement, and it is ensured that the melt in the first chamber R1 has enough flow space, so as to make the melt in the first chamber R1 flow to the second chamber R2 by the first through hole 20. If D3 = D2*X2, 60%≤X2≤80%, on the premise that the third chamber R3 meets a space requirement for the growth of the ingots, it is beneficial to ensure that the second chamber R2 has enough space, such that the melt is more homogenized, and the melt in the second chamber R2 has enough flow space, so as to cause the melt in the second chamber R2 to flow to the third chamber R3 by the second through hole 30. X1 and X2 may or may not the same.
For example, in embodiments of
In some embodiments, as shown in
Specific structures of the first mortise and tenon structure 5 and the second mortise and tenon structure 6 may be designed according to the practical application, as long as the assembling between the second crucible 2 and the first crucible 1 is reliable, and the assembling between the third crucible 3 and the first crucible 1 is reliable.
It is to be noted that, in the description of the present disclosure, the “cylindric structure” should be understood in a broad sense and is not limited to a cylinder structure having a circular cross section. For example, the cylindric structure may be a polygonal cylinder structure, or a cylindrical structure with a constant cross-sectional area, for example, may be a conical cylinder structure.
In some embodiments, as shown in
For example, the top sides of the first sub-chamber R31 and the second sub-chamber R32 are disposed in an open manner. The first sub-chamber R31 is located inside the fourth crucible 4, and the second sub-chamber R32 is formed outside the fourth crucible 4. The first sub-chamber R31 is adapted to be constructed as the growth zone Ω3, and the second chamber R2 is adapted to be constructed as the dopant feed zone Ω2, such that the second chamber R2 is configured to feed the dopant.
In an example of
During the use of the crucible 100, when the feed device 101 feeds, the charge (for example, silicon) is added to the first chamber R1, then the dopant (for example, arsenic) is added to the second chamber R2, and ingot growing is performed in the first sub-chamber R31. Since the melt in the first chamber R1 and the second chamber R2 needs to pass through the second sub-chamber R32 before flowing to the first sub-chamber R31, the second sub-chamber R32 may be adapted to be constructed as a “stirring zone”, such that enough mixing space is provided for the melted charge and dopant, so that it is beneficial to further improve the uniformity of the melt in the first sub-chamber R31; and a good heat preservation effect is achieved, such that facilitating growth of ingots with higher quality. Furthermore, by disposing the second sub-chamber R32 to separate the first sub-chamber R31 from the first chamber R1 and the second chamber R2, a problem that easy disturbance of the melt level is avoided during feeding, such that the stability of the melt level during feeding is guaranteed, it is beneficial to achieve stable growth of the ingots, and uniform distribution of radial resistance and axial resistance of the ingots are realized, thereby guaranteeing stable production. In addition, the crucible 100 may rotate around its central axis during use. The stable melt level may prevent the solid-liquid interface during ingot pulling from protruding the ingot, such that during production by CCZ, the resistance of the ingot in an axial direction and a radial direction is further effectively controlled to be uniformly distributed, so as to further improve the quality of the ingot. For example, the resistance of a wafer used in an electronic product shall be within a narrow resistance range, and the ingot grown by the crucible 100 in the present disclosure may meet the above requirement without causing loss and waste of the charges and working hours, such that costs are saved.
It is to be noted that, the direction “outward” is defined as the direction away from the center axis of the crucible 100, and the opposite direction is defined as inward.
In step S1, the initial charge is separately loaded into the first chamber R1, the second chamber R2, the first sub-chamber R31 and the second sub-chamber R32. The particle diameter of the initial charge in the first chamber R1 is greater than the particle diameter of the initial charge in the first sub-chamber R31 and the particle diameter of the initial charge in the second sub-chamber R32, such that enough initial charge is contained in the first sub-chamber R31 and the second sub-chamber R32, avoid the problem of influencing the ingot growing due to the fact that the air bubbles are easily generated in the first sub-chamber R31 and the second sub-chamber R32 during material melting process.
Definitely, the present disclosure is not limited to the following. In some embodiments, as shown in
In some embodiments, the aperture of the first through hole 20 is d1, the aperture of the second through hole 30 is d2, and the aperture of the third through hole 40 is d3, where d1, d2 and d3 meet: d1 < d2 < d3, such that the aperture of the first through hole 20 is relatively small. For example, the aperture of the first through hole 20 may be less than or equal to the diameter of the particle in the first chamber R1, such that the particles may be prevented from directly entering the second chamber R2 without being melted and then entering the first sub-chamber R31 to affect the ingot growth and yield, thereby guaranteeing the yield of the ingots. The aperture of the second through hole 30 is greater than the aperture of the first through hole 20, such that the melt may be prevented from gathering in the second chamber R2, causing retention of the melt, so as to guarantee the flow of the melt to be smoother. In addition, the charge and the dopant in the second sub-chamber R32 are melted, and the aperture of the third through hole 40 is relatively large, such that solid-liquid interface vibration caused by the retention of the melt may be prevented from affecting the follow-up ingot growing process.
Wherein, the first through hole 20, the second through hole 30 and the third through hole 40 may be formed as circular holes. Definitely, when at least one of the first through hole 20, the second through hole 30 and the third through hole 40 is formed as a non-circular hole, the aperture of at least one of the first through hole 20, the second through hole 30 and the third through hole 40 is understood as an equivalent diameter.
In some embodiments, as shown in
For example, in an example of
In some embodiments, as shown in
When the crucible 100 is applied to the monocrystal furnace, the cooling jacket 108 of the monocrystal furnace is disposed right above the growth zone Ω3; and on the plane perpendicular to the central axis of the crucible 100, the orthographic projection of the cooling jacket 108 is located within the orthographic projection range of the growth zone Ω3. By setting the height of the top end of the fourth crucible 4 to be relatively low relative to the height of the top end of the third crucible 3, the reflector 107 is disposed between the fourth crucible 4 and the cooling jacket 108, so as to separate the cooling jacket 108 from the fourth crucible 4, such that the growth of the ingots is prevented from being easily affected by the heat radiation generated by the high-temperature melt, thereby guaranteeing the solidification of the ingots. In addition, the heights of the top end of the second crucible 2 and the top end of the third crucible 3 are relatively high, the dopant (for example, a volatile dopant, such as arsenic) is prevented from being taken away by airflow. For example, the dopant is prevented from being taken away by an argon flow in the monocrystal furnace, such that the argon flow may be prevented from coming into contact with the solid-liquid interface to a certain extent. Therefore, the waste of the dopant is avoided, and nonuniform radial resistance of the ingots caused by nonuniform doping is avoided. Definitely, the crucible 100 may be further applied to other devices.
It is to be noted that, the top end of the first crucible 1, the top end of the second crucible 2 and the top end of the third crucible 3 are disposed flush with each other, which may include the following situations: 1. The top end of the first crucible 1, the top end of the second crucible 2 and the top end of the third crucible 3 are located on the same plane; and 2. The difference in height positions of the top end of the first crucible 1, the top end of the second crucible 2 and the top end of the third crucible 3 is small.
In some embodiments, as shown in
The diameter D1 of the first body 11, the diameter D2 of the second body 21, the diameter D3 of the third body 31 and the diameter D4 of the fourth body 41 meet an equation of Dn+1 = Dn*Xn, where n = 1, 2, 3, 60%≤Xn≤80%. For example, Xn may be 60%, 70%, 80%, or the like.
Therefore, D4 = D3*X3, 60%≤X3≤80%, insofar as the first sub-chamber R31 is guaranteed to meet the space requirement for the growth of the ingots, it is ensured that the second sub-chamber R32 has enough space, such that the melt formed by the charge and the dopant is more homogenized, and it is beneficial to ensure that the melt in the second sub-chamber R32 has enough flow space, so as to cause the melt in the second sub-chamber R32 to flow to the first sub-chamber R31 by the third through hole 40. X1, X2 and X3 may be equal or unequal. That is to say, X1, X2 and X3 may meet: X1 = X2 = X3, X1≠X2 = X3, X1 = X2≠X3 or X1≠X2≠X3.
For example, in an example of
In some embodiments, as shown in
In some embodiments, as shown in
Optionally, in embodiments of
As shown in
Other structures and operations of the crucible 100 according to the embodiments of the present disclosure are known to those of ordinary skill in the art, and will not be described in detail here.
In the description of the present disclosure, it is to be noted that, terms such as “center”, “transverse”, “height”, “up”, “down”, “top”, “bottom”, “inside”, “outside”, “axial”, “radial”, “circumferential” and the like are orientation or position relationships shown in the drawings, are adopted not to indicate or imply that indicated apparatuses or components must be in specific orientations or structured and operated in specific orientations but only to conveniently describe the present disclosure and simplify descriptions, and thus should not be construed as limits to the present disclosure.
In addition, the terms “first” and “second” are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Furthermore, features delimited with “first”, “second” may expressly or implicitly include one or more of those features. In the description of the disclosure, “a plurality of” means two or more, unless otherwise explicitly specified.
In the description of the specification, descriptions of the terms “an embodiment,” “some embodiments,” “example,” “specific example,” or “some examples”, mean that specific features, structures, materials, or characteristics described with reference to the implementations or examples are included in at least one implementation or example of the present disclosure. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the described particular features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples. In addition, a person skilled in the art may integrate and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples without contradiction.
Although the embodiments of the present disclosure have been shown and described above, it may be understood by those skilled in the art that various changes, modifications, replacements and variations can be made in these embodiments without departing from the principle and objective of the present disclosure, and the scope of the present disclosure is defined by the claims and equivalents thereof.
Number | Date | Country | Kind |
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202010948861.8 | Sep 2020 | CN | national |
This disclosure is a national stage application of International Patent Application No. PCT/CN2021/117537, which is filed on Sep. 9, 2021. The disclosure claims priority to Application No. 202010948861.8, filed to the China National Intellectual Property Administration on Sep. 10, 2020 and entitled “Method of growing ingot”.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2021/117537 | 9/9/2021 | WO |