Claims
- 1. A process of fabricating a field effect transistor on a semiconductor substrate of a first conductivity type, comprising the steps of:
- a) forming a gate insulating film overlain by a gate electrode on an area of a surface of said semiconductor substrate, other areas of said surface of said semiconductor substrate on both sides of said gate insulating film being exposed, respectively;
- b) covering the entire surface of said gate electrode and said other areas with an insulating film;
- c) removing said insulating film on said other areas for exposing said other areas for forming lightly doped source and drain regions;
- d) depositing a polysilicon film on the entire surface so as to cover said insulating film at least left on said gate electrode and said other areas of said surface of said semiconductor substrate;
- e) doping said polysilicon film with impurity atoms of a second conductivity type opposite to said first conductivity type, said impurity atoms being diffused from said polysilicon film into said other areas so that said lightly doped source and drain region are formed in said semiconductor substrate;
- f) anisotropically etching said polysilicon film so as to form side walls covering said lightly doped source and drain regions, respectively; and
- g) ion implanting impurity atoms of said second conductivity type into said semiconductor substrate for forming heavily doped source and drain region, said gate electrode and said side walls serving as a mask.
Priority Claims (1)
Number |
Date |
Country |
Kind |
62-130742 |
May 1987 |
JPX |
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Parent Case Info
This is a Divisional of Application Ser. No. 07/456,195 filed Dec. 19, 1989 now abandoned, which was a Continuation of application Ser. No. 07/199,653 filed May 27, 1988 now abandoned.
Foreign Referenced Citations (3)
Number |
Date |
Country |
196573 |
Dec 1982 |
JPX |
147774 |
Jul 1987 |
JPX |
02825 |
May 1987 |
WOX |
Divisions (1)
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Number |
Date |
Country |
Parent |
456195 |
Dec 1989 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
199653 |
May 1988 |
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